检索结果-内蒙古大学图书馆

Structural plasticity-based hydrogel optical Willshaw model for one-shot on-the-fly edge learning

学校读者我要写书评

暂无评论

InfoMat 2023年第4期5卷 48-59页

作者： Dingchen Wang Dingyao Liu Yinan Lin Anran Yuan Woyu Zhang Yaping Zhao Shaocong Wang Xi Chen Hegan Chen Yi Zhang Yang Jiang Shuhui Shi Kam Chi Loong Jia Chen Songrui Wei Qing Wang Hongyu Yu Renjing Xu Dashan Shang Han Zhang Shiming Zhang Zhongrui Wang Department of Electrical and Electronic Engineering The University of Hong KongHong Kongthe People's Republic of China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK CentersHong Kong Science ParkHong Kongthe People's Republic of China School of Computer Science and Engineering Faculty of Innovation EngineeringMacao University of Science and TechnologyMacaothe People's Republic of China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijingthe People's Republic of China Collaborative Innovation Center for Optoelectronic Science Technology International Collaborative Laboratory of 2D Materials for OptoelectronicsScience and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhenthe People's Republic of China School of Microelectronics Southern University of Science and TechnologyShenzhenthe People's Republic of China Microelectronics Thrust Function Hub of the Hong Kong University of Science and Technology(Guangzhou)Guagndongthe People's Republic of China

Autonomous one-shot on-the-fly learning copes with the high privacy,small dataset,and in-stream data at the *** such learning on digital hardware suffers from the well-known von-Neumann and scaling *** optical neural networks featuring large parallelism,low latency,and high efficiency offer a promising ***,ex-situ training of conventional optical networks,where optical path configuration and deep learning model optimization are separated,incurs hardware,energy and time overheads,and defeats the advantages in edge ***,we introduced a bio-inspired material-algorithm co-design to construct a hydrogel-based optical Willshaw model(HOWM),manifesting Hebbian-rule-based structural plasticity for simultaneous optical path configuration and deep learning model optimization thanks to the underlying opto-chemical *** first employed the HOWM as an all optical in-sensor AI processor for one-shot pattern classification,association and *** then leveraged HOWM to function as a ternary content addressable memory(TCAM)of an optical memory augmented neural network(MANN)for one-shot learning the Omniglot *** HOWM empowered one-shot on-the-fly edge learning leads to 1000boost of energy efficiency and 10boost of speed,which paves the way for the next-generation autonomous,efficient,and affordable smart edge systems.

关键词： associative memory hydrogel one-shot learning optical neural network structural plasticity Willshaw model

Real-time Deformation Correction in Additively Printed Flexible Antenna Arrays

学校读者我要写书评

暂无评论

arXiv 2024年

作者： Poolakkal, Sreeni Islam, Abdullah Bansal, Shrestha Rao, Arpit Dabrowski, Ted Kwan, Kalsi Verma, Amit Xu, Quiyan Ghaderi, Erfan Lall, Pradeep Shekhar, Sudip Navarro, Julio Ren, Shenqiang Williams, John Gupta, Subhanshu School of Electrical Engineering and Computer Sciences Washington State University 355 NE Spokane St PullmanWA99163 United States Additive Printing Boeing AL United States Department of Electrical and Computer Engineering University of British Columbia Canada Department of Materials Science and Engineering University of Maryland MD United States Department of Mechanical Engineering Auburn University AL United States

Conformal phased arrays provide multiple degrees of freedom to the scan angle, which is typically limited by antenna aperture in rigid arrays. Silicon-based RF signal processing offers reliable, reconfigurable, multi-functional, and compact control for conformal phased arrays that can be used for on-the-move communication. While the lightweight, compactness, and shape-changing properties of the conformal phased arrays are attractive, these features result in dynamic deformation of the array during motion leading to significant dynamic beam pointing errors. We propose a silicon-based, compact, reconfigurable solution to self-correct these dynamic deformation-induced beam pointing errors. Furthermore, additive printing is leveraged to enhance the flexibility of the conformal phased arrays, as the printed conductive ink is more flexible than bulk copper and can be easily deposited on flexible sheets using different printing tools, providing an environmentally-friendly solution for large-scale production. The inks such as conventional silver inks are expensive and copper-based printable inks suffer from spontaneous metal oxidation that alters trace impedance and degrades beamforming performance. This work uses a low-cost molecular copper decomposition ink with reliable RF properties at different temperature and strain to print the proposed intelligent conformal phased array operating at 2.1 GHz. Proof-of-concept prototype 2×2 array self-corrects the deformation induces beampointing error with an error ◦. The silicon based array processing part occupying only 2.56 mm2 area and 78.5 mW power per tile. © 2024, CC BY.

关键词： Antenna phased arrays

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

学校读者我要写书评

暂无评论

arXiv 2023年

作者： Tang, Jingyu Jiang, Kunyao Xu, Chengchao Cabral, Matthew J. Xiao, Kelly Porter, Lisa M. Davis, Robert F. Department of Materials Science and Engineering Carnegie Mellon University PittsburghPA15213 United States Department of Electrical and Computer Engineering Carnegie Mellon University PittsburghPA15213 United States

Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ~470 ℃ using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 ℃ exhibited either poor crystallization or an amorphous structure;the film grown at 500 ℃ contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 ℃. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 ℃ revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 ℃ and the same film annealed at 600 ℃. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3, locally stabilizes the "γ-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "γ-phase" and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs. Copyright © 2023, The Authors. All rights reserved.

关键词： Gallium compounds

Colossal Birefringence from Periodic Structural Modulations

学校读者我要写书评

暂无评论

Colossal Birefringence from Periodic Structural Modulations

2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Mei, Hongyan Ren, Guodong Zhao, Boyang Salman, Jad Jung, Gwan-Yeong Chen, Huandong Thind, Arashdeep S. Cavin, John Hachtel, Jordan A. Chi, Miaofang Niu, Shanyuan Joe, Graham Wan, Chenghao Settineri, Nick Teat, Simon J. Chakoumakos, Bryan C. Ravichandran, Jayakanth Mishra, Rohan Kats, Mikhail A. Department of Electrical and Computer Engineering University of Wisconsin-Madison MadisonWI53706 United States Institute of Materials Science and Engineering Washington University in St. Louis St. LouisMO63130 United States Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los AngelesCA90089 United States Department of Mechanical Engineering and Material Science Washington University in St. Louis St. LouisMO63130 United States Department of Physics Washington University in St. Louis St. LouisMO63130 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37830 United States Department of Materials Science and Engineering University of Wisconsin-Madison MadisonWI53706 United States Advanced Light Source Lawrence BerkeleyNational Laboratory BerkeleyCA94720 United States Neutron Scattering Division Oak Ridge NationalLaboratory Oak RidgeTN37830 United States Ming Hsieh Department of Electrical Engineering University of Southern California Los AngelesCA90089 United States

We introduce structural modulation as a new mechanism for achieving colossal optical anisotropy. Modulated nonstoichiometric material Sr9/8TiS3 is shown to have an extraordinary refractive index ne = 4.5 and ordinary ... 详细信息

ISBN: (纸本)9781957171258

关键词： Refractive index

engineering Andreev Bound States for Thermal Sensing in Proximity Josephson Junctions

学校读者我要写书评

暂无评论

arXiv 2025年

作者： Jung, Woochan Arnault, Ethan G. Huang, Bevin Park, Jinho Jang, Seong Watanabe, Kenji Taniguchi, Takashi Englund, Dirk Fong, Kin Chung Lee, Gil-Ho Physics Department Pohang University of Science and Technology Pohang37673 Korea Republic of Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Intelligence Community Postdoctoral Research Fellowship Program Massachusetts Institute of Technology CambridgeMA02139 United States Department of Mechanical Engineering Columbia University New YorkNY10027 United States Research Center for Functional Materials National Institute for Materials Science Tsukuba Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba Japan Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Electrical and Computer Engineering Northeastern University BostonMA02115 United States Department of Physics Northeastern University BostonMA02115 United States Quantum Materials and Sensing Institute BurlingtonMA01803 United States

The thermal response of proximity Josephson junctions (JJs) is governed by the temperature (T)- dependent occupation of Andreev bound states (ABS), making them promising candidates for sensitive thermal detection. In this study, we systematically engineer ABS to enhance the thermal sensitivity of critical current (lc) of proximity JJs, quantified as |dlc/dT/| for threshold readout scheme and |dlc/***−1| for inductive readout scheme. Using a gate-tunable graphene-based JJ platform, we explore the impact of key parameters—including channel length, transparency, carrier density, and superconducting material—on the thermal response. Our results reveal that the proximity-induced superconducting gap plays a crucial role in optimizing thermal sensitivity. Notably, we see a maximum |dlc/***−1| value of 0.6 K−1 at low temperatures with titanium-based graphene JJs. By demonstrating a systematic approach to engineering ABS in proximity JJs, this work establishes a versatile framework for optimizing thermal sensors and advancing the study of ABS-mediated transport. © 2025, CC BY.

关键词： Superconducting materials

Do agrivoltaics improve public support for solar? A survey on perceptions, preferences, and priorities

学校读者我要写书评

暂无评论

Green Technology, Resilience, and Sustainability 2022年第1期2卷 1-17页

作者： Pascaris, Alexis S. Schelly, Chelsea Rouleau, Mark Pearce, Joshua M. Department of Social Sciences Michigan Technological University Houghton USA Department of Materials Science & Engineering and Department of Electrical & Computer Engineering Michigan Technological University Houghton USA Department of Electrical Engineering and Ivey School of Business Western University London Canada

Agrivoltaic systems integrate agricultural production with solar photovoltaic electricity generation. Given the proven technical, economic, and environmental co-benefits provided by agrivoltaic systems, increased proliferation is anticipated, which necessitates accounting for the nuances of community resistance to solar development on farmland and identifying pathways for mitigation. Minimizing siting conflict and addressing agricultural communities’ concerns will be key in continued deployment of agrivoltaics, as localized acceptance of solar is a critical determinant of project success. This survey study assessed if public support for solar development increases when energy and agricultural production are combined in an agrivoltaic system. Results show that 81.8% of respondents would be more likely to support solar development in their community if it integrated agricultural production. This increase in support for solar given the agrivoltaic approach highlights a development strategy that can improve local social acceptance and the deployment rate of solar. Survey respondents prefer agrivoltaic projects that a) are designed to provide economic opportunities for farmers and the local community b) are not located on public property c) do not threaten local interests and d) ensure fair distribution of economic benefits. Proactively identifying what the public perceives as opportunities and concerns related to agrivoltaic development can help improve the design, business model, and siting of systems in the U.S.

关键词：

Emergent Symmetry and Valley Chern Insulator in Twisted Double-Bilayer Graphene

学校读者我要写书评

暂无评论

Physical Review Letters 2024年第24期133卷 246401-246401页

作者： Yimeng Wang G. William Burg Biao Lian Kenji Watanabe Takashi Taniguchi B. Andrei Bernevig Emanuel Tutuc Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78758 USA Princeton Center for Theoretical Science Princeton University Princeton New Jersey 08544 USA Research Center for Functional Materials National Institute of Materials Science 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan International Center for Materials Nanoarchitectonics National Institute of Materials Science 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan Department of Physics Princeton University Princeton New Jersey 08544 USA

Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1° does not alter the emergent valley symmetry or the single-particle band topology.

关键词： Chern insulators Magnetotransport Quantum Hall effect Graphene Twisted heterostructures Topology

Charge-Transfer Hyperbolic Polaritons in α-MoO3/graphene heterostructures

学校读者我要写书评

暂无评论

arXiv 2024年

作者： Shen, Jialiang Chen, M. Korostelev, V. Kim, H. Fathi-Hafshejani, P. Mahjouri-Samani, M. Klyukin, K. Lee, G.-H. Dai, S. Materials Research and Education Center Department of Mechanical Engineering Auburn University AuburnAL36849 United States Department of Materials Science and Engineering Seoul National University Gwanak-ro 1 Gwanak-gu Seoul08826 Korea Republic of Department of Electrical and Computer Engineering Auburn University AuburnAL36849 United States

Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials hasn’t been demonstrated. We report the direct charge transfer in pure polaritonic van der Waals (vdW) heterostructures of αMoO3/graphene. We extracted the Fermi energy of 0.6 eV for graphene by infrared nano-imaging of charge transfer hyperbolic polaritons in the vdW heterostructure. This unusually high Fermi energy is attributed to the charge transfer between graphene and α-MoO3. Moreover, we have observed charge transfer hyperbolic polaritons in multiple energy-momentum dispersion branches with a wavelength elongation of up to 150%. With support from the DFT calculation, we find that the charge transfer between graphene and α-MoO3, absent in mechanically assembled vdW heterostructures, is attributed to the relatively pristine heterointerface preserved in the epitaxially grown vdW heterostructure. The direct charge transfer and charge transfer hyperbolic polaritons demonstrated in our work hold great promise for developing nano-optical circuits, computational devices, communication systems, and light and energy manipulation devices. Copyright © 2024, The Authors. All rights reserved.

关键词： Charge transfer

Intrinsic and Extrinsic Factors Influencing the Dynamics of VO2 Mott Oscillators

学校读者我要写书评

暂无评论

Physical Review Applied 2023年第4期19卷 044028-044028页

作者： Stephanie M. Bohaichuk Suhas Kumar Mahnaz Islam Miguel Muñoz Rojo R. Stanley Williams Gregory Pitner Jaewoo Jeong Mahesh G. Samant Stuart S.P. Parkin Eric Pop Department of Electrical Engineering Stanford University Stanford California USA Sandia National Laboratories Livermore California USA Department of Thermal and Fluid Engineering University of Twente Enschede Netherlands Department of Electrical & Computer Engineering Texas A&M University College Station Texas USA IBM Almaden Research Center San Jose California USA Department of Materials Science and Engineering Stanford University Stanford California USA

Oscillatory devices have recently attracted significant interest as key components of computing systems based on biomimetic neuronal spiking. An understanding of the time scales underlying the spiking is essential for engineering fast, controllable, low-energy devices. However, we find that the intrinsic dynamics of these devices is difficult to properly characterize, as they can be heavily influenced by the external circuitry used to measure them. Here we demonstrate these challenges using a VO2 Mott oscillator with a sub-100-nm effective size, achieved using a nanogap cut in a metallic carbon nanotube electrode. Given the nanoscale thermal volume of this device, it would be expected to exhibit rapid oscillations. However, due to external parasitics present within commonly used current sources, we see orders-of-magnitude slower dynamics. We outline methods for determining when measurements are dominated by extrinsic factors and discuss the operating conditions under which intrinsic oscillation frequencies may be observed.

关键词： Bifurcations Metal-insulator transition Neuronal dynamics Devices Mott insulators Nanotubes Atomic force microscopy Scanning probe microscopy