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IEEE International Conference on Soft Robotics (RoboSoft)

作者： Savita V. Kendre Lehong Wang Ethan Wilke Nicholas Pacheco Loris Fichera Markus P. Nemitz Department of Robotics Engineering Worcester Polytechnic Institute Worcester MA USA Department of Computer Science Worcester Polytechnic Institute Worcester MA USA Department of Biomedical Engineering Worcester Polytechnic Institute Worcester MA USA Department of Mechanical and Materials Engineering Worcester Polytechnic Institute Worcester MA USA Department of Electrical and Computer Engineering Worcester Polytechnic Institute Worcester MA USA

Existing fluidic soft logic gates for controlling soft robots typically depend on labor-intensive manual fabrication or costly printing methods. In our research, we utilize Fused Deposition Modeling to create fully 3D-printed fluidic logic gates, fabricating a valve from thermoplastic polyurethane. We investigate the 3D printing of tubing and introduce a novel extrusion nozzle for tubing production. Our approach significantly reduces the production time for soft fluidic valves from 27 hours using replica molding to 3 hours with FDM printing. We apply our 3D-printed valve to develop optimized XOR gates and D-latch circuits, presenting a rapid and cost-effective fabrication method for fluidic logic gates that aims to make fluidic circuitry more accessible to the soft robotics community.

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On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET

On the Reliability of High-Performance Dual Gate (DG) W-Dope...

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Symposium on VLSI Technology

作者： Khandker Akif Aabrar Hyeonwoo Park Sharadindu G. Kirtania Eknath Sarkar Md Abdullah Al Mamun Sunbin Deng Chengyang Zhang Gilbert B. Rayner Kyeongjae Cho Suman Datta School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta Georgia USA Department of Materials Science and Engineering University of Texas at Dallas Richardson TX USA Kurt J. Lesker Company Jefferson Hills Pennsylvania

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

We demonstrate a high performance back-end-of-line (BEOL) compatible tungsten (W)-doped In 2 O 3 channel (IWO) dual gate (DG) field-effect transistor (FET) with ultra low-leakage current $<10^{-15}\ \ \mathrm{A}/\mu \mathrm{m}$ and high $\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}}$ ratio of $5.8\times 10^{11}$ at 2.5V overdrive $(\mathrm{V}_{\text{ov}})$ . In addition, the IWO DG FET demonstrates a record low negative bias temperature instability (NBTI) of 7.2mV, record low hot carrier degradation (HCD) of 63mV and a low positive bias temperature instability (PBTI) of 85mV at 1V $\mathrm{V}_{\text{ov}}$ which makes IWO DG FET a potential candidate for realizing high density embedded-DRAM for last-level cache (LLC). Furthermore, we develop a comprehensive modeling framework for assesing the reliability of amorphous oxide semiconductor (AOS) channel FETs which can provide insights into the threshold voltage $(\mathrm{V}_{\mathrm{T}})$ instability mechanisms and help design appropriate mitigation strategies.

关键词： Negative bias temperature instability Electron traps Thermal variables control Prevention and mitigation Impurities Field effect transistors Ionization

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A model for the current-voltage characteristic of membrane/electrolyte junctions

arXiv

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arXiv 2024年

作者： Mele, L.J. Alam, M.A. Palestri, P. Department of Materials Science and Engineering Stanford University StanfordCA94305 United States School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Engineering Department "Enzo Ferrari" University of Modena and Reggio Emilia Modena41125 Italy

A model for the current-voltage characteristic of the junction between an Ion- Sensitive-Membrane and an electrolyte solution is derived and compared with numerical simulations of the Poisson-Nernst-Planck model for ion transport. The expression resembles that of a semiconductor pn junction with a non-ideality factor of 2. The non-ideality correlated to the voltage drop in the electrolyte induced by the re-arrangement of the counter-ions. © 2024, CC BY-NC-ND.

关键词： Semiconductor junctions

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Effects of Encapsulant Properties on the Thermo-Mechanical Reliability of Double-Side Cooled Power Modules for Traction Inverters

Effects of Encapsulant Properties on the Thermo-Mechanical R...

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IEEE Energy Conversion Congress and Exposition, ECCE

作者： Filip Boshkovski Carl Nicholas Zichen Zhang Paul Paret Khai. D. T. Ngo Guo-Quan Lu Department of Materials Science and Engineering Virginia Tech Blacksburg US Bradley Department of Electrical and Computer Engineering CPES Virginia Tech Blacksburg US National Renewable Energy Laboratory Golden CO USA

Double-side cooled power modules are being developed for next-generation traction inverters due to their better heat extraction, lower profile, and lower parasitic inductances. However, due to their rigid structure, they cause reliability concerns arising from high thermo-mechanical stresses at the interconnection joints in the module. In this work, a materials-based approach using rigid encapsulants is presented for reducing thermo-mechanical fatigue. Finite-element thermo-mechanical simulations were performed to examine the effects of the elastic modulus and coefficient of thermal expansion of epoxy-based encapsulants on the bond deformation inside a double-side cooled power module. It was found that a rigid encapsulant with a high modulus of 6.0 GPa or above and a coefficient of thermal expansion around 20 ppm/°C would improve the thermo-mechanical reliability of double-side cooled power modules by decreasing the permanent bond deformation inside the modules by 50-60%.

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Test Methodology Development for Investigating CeRAM at Elevated Temperatures

Test Methodology Development for Investigating CeRAM at Elev...

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IEEE International Conference on Microelectronic Test Structures

作者： A. A. Gruszecki R. Prasad S. V. Suryavanshi G. Yeric C. D. Young Electrical and Computer Engineering Department The University of Texas at Dallas Richardson Texas USA Cerfe Labs Austin Texas USA Department of Materials Science and Engineering The University of Texas at Dallas Richardson Texas USA

Abstract-Correlated electron RAM (CeRAM) device test structures utilizing C-doped NiO were fabricated and electrically characterized to determine functionality in extreme environments. CeRAM devices were demonstrated to repeatedly cycle at temperatures up to 200°C while maintaining a substantial memory window of over 1000 x. Careful selection of compliance current when sweeping the high resistance state (OFF) is required for optimal device performance. The presence of a temperature dependent leakage current in the OFF state results in reducing OFF resistance at elevated temperatures.

关键词： Resistance Performance evaluation Temperature dependence Temperature Random access memory Microelectronics Leakage currents

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A weighted multivariate fuzzy time series method for multiple output high-dimensional time series forecasting in IoT applications

A weighted multivariate fuzzy time series method for multipl...

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2024 IEEE Latin American Conference on Computational Intelligence, LA-CCI 2024

作者： Bitencourt, Hugo Vinicius De Oliveira Lucas, Patricia Orang, Omid Silva, Petronio Guimaraes, Frederico Gadelha Universidade Federal de Minas Gerais Graduate Program in Electrical Engineering Belo Horizonte31270-901 Brazil Instituto Federal Do Norte de Minas Gerais Salinas Brazil Universidade Federal de Minas Gerais Department of Computer Science Belo Horizonte31270-901 Brazil Instituto Federal Do Norte de Minas Gerais Januária Brazil

ISBN: (纸本)9798350374575

In Internet of Things (IoT) applications, data flows are continuous streams of high-dimensional time series that aggregate various data sources. In this context, decision-making processes frequently encompass multiple factors and criteria that demand forecasting these time series. This paper introduces MO-WMVFTS, a novel multiple-input multiple-output (MIMO) fuzzy time series (FTS) method for tackling this complex scenario. MO-WMVFTS is a hybrid forecasting method that fuses weighted multivariate FTS (WMVFTS) with embedding transformations, designed for IoT applications. To assess the performance of the proposed method, it was applied to the prediction of energy consumption in smart homes and air quality in smart cities. Here, three real-world datasets are used to assess the validity of our proposed approach, and the results obtained are highly competitive when compared to other existing methods. © 2024 IEEE.

关键词： Smart homes

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Perpendicular Magnetization Switching in Heusler Alloy Films

Perpendicular Magnetization Switching in Heusler Alloy Films

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Magnetic Conference - Short Papers (INTERMAG Short Papers), IEEE International

作者： Lizhu Ren Chenghang Zhou Liang Liu Jingsheng Chen Kie Leong Teo Department of Electrical and Computer Engineering National University of Singapore Singapore Department of Materials Science and Engineering National University of Singapore Singapore School of Physics and Astronomy Shanghai Jiao Tong University Shanghai China

ISBN: (数字)9798350338362

ISBN: (纸本)9798350338379

electrically manipulating magnetic moment by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy $\text{Mn}_{\mathrm{x}}\text{Pt}_{\mathrm{y}}\text{Ge}$ (MPG) films with various thicknesses are directly deposited on thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as $4.1\times 10^{10}\text{Am}^{-2}$ , as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analysed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behaviour in the single magnetic layer. Moreover, a memristive characteristic has been observed due to multi-domain switching property in the single layer MPG device. This work proves that the MPG is a good candidate to be utilized in high-density and efficient MRAM devices and other novel spintronics.

关键词： Magnetic films Torque Optical switches Magnetization Metals Stability analysis Perpendicular magnetic anisotropy

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Electronic Band Structure of a Superconducting Nickelate Probed by the Seebeck Coefficient in the Disordered Limit

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Physical Review X 2024年第4期14卷 041021页

作者： G. Grissonnanche G. A. Pan H. LaBollita D. Ferenc Segedin Q. Song H. Paik C. M. Brooks E. Beauchesne-Blanchet J. L. Santana González A. S. Botana J. A. Mundy B. J. Ramshaw Laboratory of Atomic and Solid State Physics Kavli Institute at Cornell for Nanoscale Science Ithaca New York USA CEA/DRF/lRAMIS CNRS Department of Physics Platform for the Accelerated Realization Analysis and Discovery of Interface Materials School of Electrical and Computer Engineering Toronto Ontario Canada

Superconducting nickelates are a new family of strongly correlated electron materials with a phase diagram closely resembling that of superconducting cuprates. While analogy with the cuprates is natural, very little is known about the metallic state of the nickelates, making these comparisons difficult. We probe the electronic dispersion of thin-film superconducting five-layer (n=5) and metallic three-layer (n=3) nickelates by measuring the Seebeck coefficient S. We find a temperature-independent and negative S/T for both n=5 and n=3 nickelates. These results are in stark contrast to the strongly temperature-dependent S/T measured at similar electron filling in the cuprate La1.36Nd0.4Sr0.24CuO4. The electronic structure calculated from density-functional theory can reproduce the temperature dependence, sign, and amplitude of S/T in the nickelates using Boltzmann transport theory. This demonstrates that the electronic structure obtained from first-principles calculations provides a reliable description of the fermiology of superconducting nickelates and suggests that, despite indications of strong electronic correlations, there are well-defined quasiparticles in the metallic state. Finally, we explain the differences in the Seebeck coefficient between nickelates and cuprates as originating in strong dissimilarities in impurity concentrations. Our study demonstrates that the high elastic scattering limit of the Seebeck coefficient reflects only the underlying band structure of a metal, analogous to the high magnetic field limit of the Hall coefficient. This opens a new avenue for Seebeck measurements to probe the electronic band structures of relatively disordered quantum materials.

关键词： Electronic structure Seebeck effect Superconductivity

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Seropill: Novel Minimally Invasive Ingestible Capsule for Serotonin Sensing in the GI Tract 22

Seropill: Novel Minimally Invasive Ingestible Capsule for Se...

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22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023

作者： Straker, Michael A. Levy, Joshua A. Stine, Justin M. Han, Jinjing Beardslee, Luke A. Ghodssi, Reza University Of Maryland Fischell Department Of Bioengineering College ParkMD United States University Of Maryland Institute For Systems Research College ParkMD United States University Of Maryland Fischell Institute For Biomedical Devices College ParkMD United States University Of Maryland Department Of Materials Science And Engineering College ParkMD United States University Of Maryland Department Of Electrical And Computer Engineering College ParkMD United States

ISBN: (纸本)9784886864352

This paper reports the first serotonin (5-HT) sensing ingestible capsule allowing minimally invasive real-time in vivo detection of luminally released serotonin in the gastrointestinal (GI) tract. The system utilizes a surface-mounted sensor with an Au-carbon nanotube (CNT) working electrode, Au counter electrode, and Ag/AgCl reference electrode. The capsule uses previously reported electronics packaged in a 3D-printed ASA shell to perform cyclic voltammetry, allowing the detection and quantification of local serotonin concentration with a dynamic range of 2-10 μM. This device marks a step toward wireless ingestible systems for real-time evaluation of gastrointestinal microbiome metabolites in vivo. © 2023 IEEJ.

关键词： Ingestible Capsule Ingestible Electronics Microbiome Sensing Serotonin Wireless Sensing

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Demonstration of a CAFQA-bootstrapped Variational Quantum Eigensolver on a trapped-ion quantum computer

arXiv

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arXiv 2024年

作者： Wang, Qingfeng Zhukas, Liudmila Miao, Qiang Dalvi, Aniket S. Love, Peter J. Monroe, Christopher Chong, Frederic T. Ravi, Gokul Subramanian Duke Quantum Center Departments of Electrical and Computer Engineering and Physics Duke University Durham United States Chemical Physics Program Institute for Physical Science and Technology University of Maryland College ParkMD United States Duke Quantum Center Duke University Durham United States Department of Electrical and Computer Engineering Duke University Durham United States Department of Physics and Astronomy Tufts University Medford United States Department of Computer Science University of Chicago Chicago United States Department of Computer Science and Engineering University of Michigan Ann Arbor United States

To enhance the variational quantum eigensolver (VQE), the CAFQA method can utilize classical computational capabilities to identify a better initial state than the Hartree-Fock method. Previous research has demonstrated that the initial state provided by CAFQA recovers more correlation energy than that of the Hartree-Fock method and results in faster convergence. In the present study, we advance the investigation of CAFQA by demonstrating its advantages on a high-fidelity trapped-ion quantum computer located at the Duke Quantum Center—this is the first experimental demonstration of CAFQA-bootstrapped VQE on a TI device and on any academic quantum device. In our VQE experiment, we use LiH and BeH2 as test cases to show that CAFQA achieves faster convergence and obtains lower energy values within the specified computational budget limits. To ensure the seamless execution of VQE on this academic device, we develop a novel hardware-software interface framework that supports independent software environments for both the circuit and hardware end. This mechanism facilitates the automation of VQE-type job executions as well as mitigates the impact of random hardware interruptions. This framework is versatile and can be applied to a variety of academic quantum devices beyond the trapped-ion quantum computer platform, with support for integration with customized packages. © 2024, CC BY.

关键词： Quantum computers

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