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2011 International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD 2011

作者： Chen, Wu Ming Jiang, Xu Chuan Yavuz, Mustafa Kambe, Shiro School of Materials Science and Engineering University of New South Wales Sydney NSW 2052 Australia Waterloo Institute for Nanotechnology University of Waterloo Waterloo ON N2L 3G1 Canada Human Sensing Program Graduate School of Science and Engineering Yamagata University 4-3-16 Johnan Yonezawa 992-8510 Japan

ISBN: (纸本)9781424478521

The Avrami's kinetics was known to be the best theory to describe Bi-2223 crystals growth. Whereas, it cannot explain the fact that maximum product volume appearing at optimum sintering time during synthesis Bi-2223 crystal. Meanwhile, the Avrami's equation can also be used to determine the activation energy of Bi-2223 crystal growth;unfortunately, the determined activation energy, E, had dispersion as much as hard to be accepted by researchers themselves. To solve those problems, we studied and developed Avrami's kinetics and obtained a developed Avrami's kinetics equation in this research. With the developed Avrami equation, the index of growth, n, and E of Bi-2223 crystals were determined, including the periods of Bi-2223 crystals growing and decomposing. The n and E for Bi-2223 crystals were changing during synthesis period, values of which can be positive, zero or negative for different reaction periods. And the negative E and n were no reports to be found before, which caused by the decomposition of the product. The developed kinetics can describe a phase transformation system that with metastable or stable product. The developed kinetics theory, as a universal theoretical tool, is expected to be widely applied in the science and engineering multidisciplines and their related interdisciplines. © 2011 IEEE.

关键词： Activation energy

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Enhancement of Interface Properties between Passivation Layers and InSb by Using Remote PECVD

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AIP Conference Proceedings 2011年第1期1399卷 105-106页

作者： Jaeyel Lee Jong‐Seok Woo Sehun Park Jungsub Kim Changjae Yang Sujin Kim Chulkyun Seok Kang Il Lee Jinsub Park Min‐Koo Han Kwang‐Seok Seo Euijoon Yoon aDepartment of Materials Science and Engineering Seoul National University Seoul Korea dDepartment of Electrical Engineering Seoul National University Seoul Korea bHybrid Materials Program (WCU) Department of Materials Science and Engineering Seoul National University Seoul Korea cDepartment of Nano Science and Technology Graduate School of Convergence Science and Technology Seoul National University Suwon Korea

We report the enhanced interface properties between passivation layers and InSb by using remote PECVD system. SiO2 and Si3N4 layers deposited by remote PECVD showed lower interface trap densities than layers deposited by normal PECVD. SiO2 layers deposited by remote PECVD showed 7.1×1011 cm−2 eV−1 of interface trap density at midgap which is slightly lower than SiO2 layers deposited by PECVD. Si3N4 layers deposited by remote PECVD showed 1.6∼1.7×1012 cm−2 eV−1 at midgap which is 3 times lower than Si3N4 layers deposited by PECVD. Interface properties of SiO2 are superior to that of Si3N4 in both case of PECVD and remote PECVD. To investigate the interface properties between SiO2 and InSb, X‐ray photoelectron spectroscopy was conducted. Indium and antimony oxide phases were found at the interface and these oxide phases could act as the origin of interface traps.

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First-principles study of electronic, vibrational, elastic, and magnetic properties of FeF2 as a function of pressure

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Physical Review B 2012年第13期85卷 134110-134110页

作者： S. López-Moreno A. H. Romero J. Mejía-López A. Muñoz Igor V. Roshchin Facultad de Ciencias Universidad Nacional Autónoma de México Apdo. Post. 70-646 México D. F. 04510 México CINVESTAV-Queretaro Libramiento Norponiente No 2000 Real de Juriquilla 76230 Queretaro Qro México Facultad de Física Pontificia Universidad Católica Av. Vicuña Mackenna 4860 Santiago Chile Departamento de Física Fundamental II Instituto de Materiales y Nanotecnología Universidad de La Laguna La Laguna 38205 Tenerife Spain Department of Physics and Astronomy Texas A&M University College Station Texas 77843-4242 USA Materials Science and Engineering Program Texas A&M University College Station Texas 77843-3003 USA

We report systematic ab initio calculations of the electronic band structure, phonon dispersion relation, and the structural characterization of FeF2 in the rutile (P42/mnm) structure as well as in several high-pressure phases by means of the generalized gradient approximation (GGA)+U approximation. Using the phonon dispersion relations, we calculated the Gibbs free energy and evaluated the phase transitions at 300 K, at which most experimental measurements are performed. Calculated Raman and infrared vibrational modes, lattice parameters, and electronic structure for all considered crystalline structures are compared with available experimental data. Our calculations show that at 5.33 GPa, the FeF2 undergoes a second-order proper ferroelastic phase transition, rutile → CaCl2-type structure. This result is supported by the softening of the elastic shear module Cs in the rutile phase, the softening (hardening) of the B1g (Ag) Raman active mode in the rutile (CaCl2-type) structure near the transition pressure, and the decrease of the square of the spontaneous strain ess from the CaCl2-type structure. This demonstrates that the rutile → CaCl2-type phase transition is driven by the coupling between the Raman active B1g mode and shear modulus Cs. At 8.22 GPa, the CaCl2-type structure undergoes a first-order phase transition to the Pbca phase, a distorted fcc Pa3¯ phase with a volume reduction of ΔV≈7%, as reported in experiments. Upon further increase of the pressure, the Pbca phase transforms to a Fmmm phase othorhombic center-type structure at ∼20.38 GPa, with ΔV≈2.5%. Finally, at 25.05 GPa, there is a phase transition to the orthorhombic cotunnite structure (Pnma space group), with ΔV≈5.8%, which is stable up to 45 GPa, the largest considered pressure. The coordination number for the Fe ion in each phase is 6, 6, 6, 8, and 9 for rutile, CaCl2-type, Pbca, Fmmm, and cotunnite structures, respectively. The evolution of the band gap, phonon frequencies, and magnetic momen

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Resonant plasmon-exciton coupling in zinc oxide quantum well-aluminum nanodisc heterostructure arrays

Resonant plasmon-exciton coupling in zinc oxide quantum well...

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作者： Lawrie, Benjamin Kim, Kyeong-Won Norton, David Mu, Richard Haglund, Richard Interdisciplinary Graduate Program in Materials Science Vanderbilt University Nashville TN 37235 United States Department of Materials Science and Engineering University of Florida Gainesville FL 32611 United States Department of Physics Fisk University Nashville TN 37208 United States Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 United States

The emergence of Fano resonances in the extinction spectra of arrays of aluminum nanodiscs 30-200 nm in diameter deposited on [Zn, Mg]O quantum wells provide the first evidence of strong coupling in zinc oxide heteros... 详细信息

ISBN: (纸本)9781557529107

关键词： Semiconductor quantum wells

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Model for biological communication in a nanofabricated cell-mimic driven by stochastic resonance

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Nano Communication Networks 2011年第1期2卷 39-49页

作者： Karig, David K. Siuti, Piro Dar, Roy D. Retterer, Scott T. Doktycz, Mitchel J. Simpson, Michael L. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Bethel Valley Road Oak Ridge TN 37831 United States Biosciences Division Oak Ridge National Laboratory Oak Ridge TN 37831 United States Graduate Program in Genome Science and Technology University of Tennessee Knoxville TN 37996 United States Department of Physics and Astronomy University of Tennessee Knoxville TN 37996-2010 United States Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996-2010 United States Center for Environmental Biotechnology University of Tennessee Knoxville TN 37996-2010 United States

Cells offer natural examples of highly efficient networks of nanomachines. Accordingly, both intracellular and intercellular communication mechanisms in nature are looked to as a source of inspiration and instruction for engineered nanocommunication. Harnessing biological functionality in this manner requires an interdisciplinary approach that integrates systems biology, synthetic biology, and nanofabrication. Here, we present a model system that exemplifies the synergism between these realms of research. We propose a synthetic gene network for operation in a nanofabricated cell mimic array that propagates a biomolecular signal over long distances using the phenomenon of stochastic resonance. Our system consists of a bacterial quorum sensing signal molecule, a bistable genetic switch triggered by this signal, and an array of nanofabricated cell mimic wells that contain the genetic system. An optimal level of noise in the system helps to propagate a time-varying AHL signal over long distances through the array of mimics. This noise level is determined both by the system volume and by the parameters of the genetic network. Our proposed genetically driven stochastic resonance system serves as a testbed for exploring the potential harnessing of gene expression noise to aid in the transmission of a time-varying molecular signal. © 2011.

关键词： Gene expression

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Piezoelectric materials: All‐Solution‐Processed Flexible Thin Film Piezoelectric Nanogenerator (Adv. Mater. 45/2012)

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Advanced materials 2012年第45期24卷

作者： Sung Yun Chung Sunyoung Kim Ju‐Hyuck Lee Kyongjun Kim Sang‐Woo Kim Chong‐Yun Kang Seok‐Jin Yoon Youn Sang Kim Program in Nano Science and Technology Graduate School of Convergence Science and Technology Seoul National University Seoul 151‐744 Republic of Korea SKKU Advanced Institute of Nanotechnology School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 440‐746 Republic of Korea Electronic Materials Center Korea Institute of Science and Technology Seoul 136‐791 Republic of Korea Advanced Institutes of Convergence Technology 864‐1 Iui‐dong Yeongtong‐gu Suwon‐si Gyeonggi‐do 443‐270 Republic of Korea

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Development of continuous wrapping tantalum barriers for internal-tin Nb3Sn multi-filamentary wires

Development of continuous wrapping tantalum barriers for int...

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2011 International Conference on Applied Superconductivity and Electromagnetic Devices, ASEMD 2011

作者： Chen, Wu Ming Yavuz, Mustafa Fu, Xue Kui Kambe, Shiro McIntyre, Peter Jin, Jian Xun School of Materials Science and Engineering University of New South Wales Sydney NSW 2052 Australia Waterloo Institute for Nanotechnology University of Waterloo Waterloo ON N2L 3G1 Canada Cankaya University Ankara Turkey Human Sensing Program Graduate School of Science and Engineering Yamagata University 4-3-16 Johnan Yonezawa 992-8510 Japan Department of Physics Texas A and M University TX United States Center of Applied Superconductivity and Electrical Engineering University of Electronic Science and Technology of China China

ISBN: (纸本)9781424478521

A process, continuous wrapping tantalum barrier, has been developed and investigated in order to reduce the manufacturing cost. By avoiding inserting expensive tantalum tube, a long sheet barrier was directly used to wrap a prior restack. In this work, a tantalum barrier with 20 % overlap was wrapped onto sub-elements. Then 18-filament Nb3Sn plus 1 copper core restack billet was successfully drawn down and extruded into round wire as thin as a diameter of 0.84 mm. The longitudinal and cross-sectional images revealed most of barriers were continuous and intact. However, further experiments are needed to optimize the process in order to keep the all barriers continuous and intact after manufacturing. © 2011 IEEE.

关键词： Tin alloys

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Structure and magnetic properties characterization of electrodeposited Co37Fe63 alloys containing oxygen for magnetic recording applications

Structure and magnetic properties characterization of electr...

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作者： Elhalawaty, S. Carpenter, R.W. George, J. Brankovic, S.R. Materials Science and Engineering Graduate Program School for Engineering of Matter Transport and Energy Arizona State University 85287-6106 United States LeRoy Eyring Center for Solid State Science Arizona State University AZ 85287-9506 United States Center for Nanomagnetic Systems University of Houston TX 77204-4005 United States Electrical and Computer Engineering Department University of Houston TX 77204-4005 United States

ISBN: (纸本)9781118029473

Soft and high magnetic moment Co37Fe63 films were electro-deposited with variable additives on Cu/Ti/Si substrates. The correlation between structure and magnetic properties has been investigated. TEM showed the crystal structure of the films to be BCC with a 〈111〉 texture, and a grain size in the range of 10-20 nm. Oxygen in the deposited films has been identified by EDS and EELS using HAADF STEM. SIMS analysis revealed the presence of hydrogen and oxygen in the deposited CoFe films. Electron microscopy results showed that the oxygen was mainly distributed along the grain boundaries in the CoFe film. In regions where oxygen was present in the films, the Fe content was enhanced relative to Co. The magnetic properties of the deposits have been measured by Vibrating Sample Magnetometer (VSM), quantifying the impact of incorporated oxygen in the film on the saturation magnetization and the coercivity.

关键词： Magnetic properties

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Phosphors as sensors for radiation-induced displacement damage

Phosphors as sensors for radiation-induced displacement dama...

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Future of Instrumentation International Workshop (FIIW)

作者： S.L. Gollub S. Weeden-Wright D.G. Walker Interdisciplinary Graduate Program in Materials Science Vanderbilt University Nashville TN USA Electrical and Computer Engineering Vanderbilt University Nashville TN USA Mechanical Engineering Vanderbilt University Nashville TN USA

Because of their luminescent properties, phosphors make excellent candidates for radiation detectors. The materials are inclined to luminesce when exposed to a variety of radiation sources including gammas, protons, alphas and so forth. However, the vast majority of research and use of phosphors as radiation sensors are as scintillators-when luminescence spontaneously occurs due to the incident radiation. In this case, incident radiation promotes electrons to excited levels. The excited electrons subsequently decay to produce photons that can be detected. The luminescence is therefore a result of ionizing radiation.

关键词： materials Phosphors Radiation effects Particle beams Photoluminescence Protons Lattices

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Optimization of defect hole placement in resonant cavities

Optimization of defect hole placement in resonant cavities

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作者： Kang, Christopher Weiss, Sharon M. Vlasov, Yurii A. Assefa, Solomon Interdisciplinary Graduate Program in Materials Science Vanderbilt University Nashville TN 37235 United States Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 United States Department of Electrical Engineering and Computer Science Vanderbilt University 37235 United States IBM T.J. Watson Research Center Yorktown Heights NY 10536 United States

We demonstrate the resonance wavelength and quality factor dependence of 50nm defect-hole placement within photonic crystal L3 microcavities. Proper placement of defect-holes leads to a 12% increase in photonic crysta... 详细信息

ISBN: (纸本)9781557529107

关键词： Photonic crystals

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