Enhancing interfacial binding and vibrational matching has been demonstrated to improve the thermal boundary conductance (TBC) of metal/non-metal interfaces. However, these two factors are not independent but are dire...
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A variety of field effect transistors (FETs) with two types of graphene-diamond (G-D) heterostructures have been fabricated. The results indicate that the transferred G-D FETs exhibit bipolar output characteristics, c...
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A variety of field effect transistors (FETs) with two types of graphene-diamond (G-D) heterostructures have been fabricated. The results indicate that the transferred G-D FETs exhibit bipolar output characteristics, characterized by a transfer curve resembling a classic V-shape. In contrast, the in situ catalyzed G-D FETs demonstrate a more complex output behavior. Notably, linear ohmic contact characteristics are established between Pd/Ti/Au contacts and the in situ G-D heterostructure without requiring additional postannealing treatment. An unprecedentedly low specific contact resistivity of 1.4 × 10–7Ω cm2has been achieved. For the in situ catalyzed G-D FETs, top-gated FETs display unipolar output characteristics with an impressive current density reaching 106A cm–2. Conversely, ring-gated FETs exhibit bipolar output characteristics, featuring a Dirac point at a voltage of 3 V. For certain FETs lacking gate modulation, approximately 18 nm-thick graphene layers situated beneath the gate oxide as the channel. This study paves new pathways for advancements in graphene-based devices or all-carbon electronics.
In recent years, the substantial increase in municipal solid waste incineration fly ash (MSWIFA) production has made its treatment a critical issue. However, the high toxicity of MSWIFA makes its utilization still in ...
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Stainless steel parts with complex shape can be fabricated using additive manufacturing, which do not rely on molds and dies. However, coarse dendrites induced by repeated heating of additive manufacturing result in w...
Stainless steel parts with complex shape can be fabricated using additive manufacturing, which do not rely on molds and dies. However, coarse dendrites induced by repeated heating of additive manufacturing result in weak properties, which limits its application. In this study, an in-situ ultrasonic rolling(UR) device was developed to assist the laser directed energy deposition(LDED) process. The microstructural characteristics, as well as the microhardness and wear behavior, were studied for the 316L stainless steel manufactured by in-situ ultrasonic rolling assisted LDED. It is found that austenite, ferrite, and small Si oxides are the main constituents of both the LDED and LDED-UR alloy samples. Under the severe plastic deformation of ultrasonic rolling, the long-branched ferrites by LDED are transformed into the rod-like phases by LDED-UR. Meanwhile, the ferrite is more uniformly distributed in the LDED-UR alloy sample compared with that in LDED alloy sample. Columnar grains with the size of 97.85 μm appear in the LDED alloy sample, which is larger than the fully equiaxed grains(22.35 μm)of the LDED-UR alloy. The hardness of the LDED-UR alloy sample is about 266.13±13.62 HV0.2, which is larger than that of the LDED alloy sample(212.93±12.85 HV0.2). Meanwhile, the wear resistance is also greatly enhanced by applying the assisted in-situ ultrasonic rolling. The achieved high wear resistance can be ascribed to the uniformly distributed hard matter(ferrites) and the impedance of dislocations by high fraction of grain boundaries. Abrasive wear and adhesive wear are identified as the primary wear mechanisms of the studied alloy. Gaining an in-depth understanding of the relationship between wear mechanisms and microstructures offers an effective approach in manufacturing high wear resistant alloys suitable for use in harsh working environments.
The presence of chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs) leads to excitons with mixed localized-delocalized character and to reduced valley selectivity. Recent experimental advances in ...
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The presence of chalcogen vacancies in monolayer transition metal dichalcogenides (TMDs) leads to excitons with mixed localized-delocalized character and to reduced valley selectivity. Recent experimental advances in defect design in TMDs allow for a close examination of such mixed exciton states as a function of their degree of circular polarization under external magnetic fields, revealing strongly varying defect-induced magnetic properties. A theoretical understanding of these observations and their physical origins demands a predictive, structure-sensitive theory. In this work, we study the effect of chalcogen vacancies on the exciton magnetic properties in monolayer MoS2. Using many-body perturbation theory, we show how the complex excitonic picture associated with the presence of defects—with reduced valley and spin selectivity due to hybridized electron-hole transitions—leads to a structurally controllable exciton magnetic response. We find a variety of g-factors with changing magnitudes and sign depending on the exciton energy and character. Our findings suggest a pathway to tune the nature of the excitons—and by that their magneto-optical properties—through defect architecture.
SrSnO 3 (SSO) is an ultra-wide bandgap (≈ 4.1 eV) semiconductor that has potential applications in high power electronics and DUV optoelectronics [1] . However, the thermal properties of doped SSO thin films have not...
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ISBN:
(数字)9798350373738
ISBN:
(纸本)9798350373745
SrSnO 3 (SSO) is an ultra-wide bandgap (≈ 4.1 eV) semiconductor that has potential applications in high power electronics and DUV optoelectronics [1] . However, the thermal properties of doped SSO thin films have not been extensively studied. Due to its high bandgap, self-heating can severely limit the device’s performance and reliability. This study reports the thermal transport characteristics of SSO based metal-semiconductor field-effect transistors (MESFETs) through 3D finite modelling and compares them with experimental data obtained via Transient Thermoreflectance Imaging (TTI). TTI can be used to obtain surface temperature maps with high spatial (≈ 410 nm) and temporal (≈ 50 ns) resolution [2] , [3] . Therefore, the TTI technique was used to extract the gate and drain metal surface temperature under pulsed biasing (300 μs pulse width with 10% duty cycle), whereas the steady state temperature rise was numerically evaluated using a 3D Finite Element (FE) model in ANSYS Workbench.
Decreasing thermal conductivity is important for designing efficient thermoelectric devices. Traditional engineering strategies have focused on point defects and interface design. Recently, dislocations as line defect...
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The path signature, having enjoyed recent success in the machine learning community, is a theoretically-driven method for engineering features from irregular paths. On the other hand, graph neural networks (GNN), neur...
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This article presents the optimal charging of a Li-ion cell based on a simplified full homogenized macro-scale (FHM) model. A solid electrolyte interface (SEI) layer model is included in the simplified FHM model to qu...
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Grounding the design of educational interventions and their analysis in theory allows us to understand and interpret results of interventions and advance educational theories. Moreover, building an understanding of wh...
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