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Effect of Concentration and Residence Time of Joncryl■ADR4368 on Melt Processability of Poly(3-hydroxybutyrate)

Journal of Renewable materials 2024年第12期12卷 2079-2094页

作者： Jéssica da Silva Chagas JoséElson Soares Filho Natália Fernanda Inocêncio Silva Marcelo Massayoshi Ueki Eliton Souto de Medeiros Renate Maria Ramos Wellen Mauricio Pinheiro de Oliveira Gelsoneide da Silva Gois Yêda Medeiros Bastos de Almeida Amélia S.F.Santos Post-Graduation Program in Materials Engineering(PPCEM) Federal University of Paraíba(UFPB)João PessoaPB 58051-900Brazil Laboratory of Materials and Biosystems(LAMAB) Federal University of Paraíba(UFPB)João PessoaPB 58051-900Brazil Department of Materials Engineering Federal University of Sergipe(UFS)Jardim Rosa ElzeSão CristóvãoSE 49100-000Brazil Institute of Science and Technology Federal University of São Paulo(UNIFESP)São Josédos CamposSP 12231-280Brazil Department of Chemical Engineering Federal University of Pernambuco(UFPE)Cidade UniversitáriaRecifePE 50670-901Brazil

Poly(3-hydroxybutyrate)(PHB)is a biothechnological and biodegradable thermoplastic polymer from the polyhydroxyalkanoates(PHAs)family,whose chain regularity,high molecular weight,and physical and mechanical properties comparable to polypropylene(PP)are characteristics that have made PHB a prominent commercial ***,its susceptibility to thermal degradation and hydrolysis has limited many *** address the challenges associated with processing,a random copolymer of 95.86 mol%3-hydroxybutyrate and 4.14 mol%3-hydroxyvalerate(referred as PHB)was compounded without(neat PHB)and with 0.25,0.5,1,and 1.5 wt%of chain extender(Joncryl■ADR 4368),consisting of multifunctional epoxy groups,and melt mixed in an internal mixer at 170℃,50 rpm,and residence times of 5,10,and 15 *** effect of chain extender concentration and residence time on the effectiveness of Joncryl■ADR 4368 to recover the pristine PHB properties were investigated through torque rheometry,melt flow index(MFI),differential scanning calorimetry(DSC),tensile testing,and thermogravimetric *** results indicated that an increase in residence time strongly influenced the prevalence of thermomechanical degradation reactions over chain extension reactions of PHB during processing in the molten *** residence times favored chain extension,while longer times favored chain *** trend led to no enhancement of PHB mechanical properties processed for 10 and 15 min,regardless of additive content *** flow index,thermogravimetric analysis and tensile strength exhibited an asymptotic behavior with the increase in additive concentration,exhibiting a noteworthy improvement in tensile strength and temperature at the highest rate of thermal degradation(TMAX),and a decrease in melt flow index of neat PHB with only 0.25 wt%of additive mixed for 5 *** results found in this work allow additional data for processing PHB by manipulating the ratios of multifunctional chain

关键词： PHB chain extender degradation epoxy groups viscosity

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Characterization of Spicule Structure 152nd

Characterization of Spicule Structure

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152nd Annual Meeting and Exhibition of The Minerals, Metals and materials Society, TMS 2023

作者： Tavangarian, Fariborz Gray, Jennifer L. Clark, Trevor Gao, Chao Mechanical Engineering Program School of Science Engineering and Technology Pennsylvania State University Harrisburg MiddletownPA17057 United States Materials Research Institute The Pennsylvania State University University Park PA16802 United States Department of Mechanical and Industrial Engineering Norwegian University of Science and Technology Trondheim7034 Norway

ISBN: (纸本)9783031225239

Nature has been a great source of inspiration for engineers and scientists for centuries. It provides unique ideas to overcome the unmet needs of human beings. Spicules are structural elements of Euplectella Aspergillum sponges that reside in the deep ocean. They have an exceptional microstructure that provides excellent mechanical properties. Although spicules are composed of a brittle material, silica (SiO2), they behave differently under load compared to other ceramics. This behavior is due to their concentric cylindrical structure. To produce a similar structure with potential engineering and biomedical applications, one needs to investigate its microstructure in depth. In this study, we examined the microstructure of spicules to understand their architecture as a foundation to better design biomedical implants for tissue engineering applications. © 2023, The Minerals, Metals & materials Society.

关键词： Microstructure

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Approach for enhancing sensitivity of tin-oxo cluster resist for high NA extreme UV lithography 41

Approach for enhancing sensitivity of tin-oxo cluster resist...

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Advances in Patterning materials and Processes XLI 2024

作者： Ku, Yejin Kim, Gayoung Kim, Min Seung Lee, Jin-Kyun Kim, Jiho Park, Byeong-Gyu Lee, Sangsul Lee, Seohyeon Jung, Byung Jun Lee, Changhyeon Kim, Hyunseok Hur, Su-Mi Koh, Chawon Nishi, Tsunehiro Kim, Hyun-Woo Program in Environment and Polymer Engineering Inha University Incheon22212 Korea Republic of Department of Polymer Science and Engineering Inha University Incheon22212 Korea Republic of Pohang Accelerator Laboratory Postech Pohang37673 Korea Republic of Department of Materials Science and Engineering University of Seoul Seoul02504 Korea Republic of Department of Polymer Engineering Graduate School Chonnam National University Gwangju61186 Korea Republic of School of Polymer Science and Engineering Chonnam National University Gwangju61186 Korea Republic of Department of Materials Science and Engineering Yonsei University Seoul03722 Korea Republic of Samsung Electronics Co. Ltd. Semiconductor R&d Center Gyeonggi-do 18448 Korea Republic of

ISBN: (纸本)9781510672208

High numerical aperture (NA) EUV lithography is considered as the most-promising candidate for next generation lithography protocol that will play a crucial role in meeting the demand on the enhanced semiconductor performance and productivity. While this technology enables the fabrication of sub-10 nm patterns, the increased NA has posed challenges, such as reduced depth of focus and narrower process margins. To overcome these hurdles, it is essential to apply thinner resist films while ensuring that the resulting small patterns maintain sufficient physical and chemical durability. Moreover, considering that thinner films absorb fewer photons, the resist molecular structure should be designed to compensate sensitivity burdens. Here, an approach has been proposed to enhance sensitivity by accelerating the solubility change of a well-known tinbased nanocluster resist. To accomplish this goal, it is important to increase not only the number of secondary electrons but also reaction sites and promote radical-based chemical reactions. We aimed at experimentally validating this concept by utilizing elements with high EUV absorbance and highly reactive functional groups with tin radicals. As a model resist, we chose a tin-oxo cage material consisting of a divalent cation containing 12 tin atoms and two counter anions. Our findings indicate that the introduction of unsaturated groups capable of building bridging bonds with radicals leads to fast solubility change at a lower exposure dose, thus enhancing sensitivity. This research offers a promising direction for the development of resists tailored for High NA EUV lithography. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Tin

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Mo-terminated edges in two-dimensional molybdenum disulfide for site-specific hydrolysis and DNA cleavage

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materials Today 2025年 86卷 162-171页

作者： Wang, Cong Wu, Menghan Li, Muqing Zhao, Yingcan Zhao, Mingchuang Zhang, Yunhao Bai, Yichao Gao, Jianxiang Wang, Xiaoxia Tian, Xilin Zhang, Han Chang, Liang Zou, Xiaolong Liu, Bilu Kang, Feiyu Terrones, Mauricio Lei, Yu Institute of Materials Research Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials & Center of Double Helix Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen518055 China Institute of Materials Research & Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen518055 China Environmental Science Program Department of Life Sciences Beijing Normal University-Hong Kong Baptist University United International College Guangdong519087 China Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen518055 China Department of Physics Department of Chemistry Department of Materials Sciences Center for 2-Dimensional and Layered Materials The Pennsylvania State University University ParkPA16802 United States International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale Optoelectronics Shenzhen University Shenzhen518060 China

The hydrolysis of DNA serves as the foundational principle for gene engineering that enable precise gene cleavage at the molecular level. This process typically occurs in biological nucleases, which exhibit nucleobase-selective and catalytic hydrolysis capabilities rarely replicated in abiotic nanomaterials. Here, we demonstrate that molybdenum-terminated (Mo-terminated) edges of molybdenum disulfide (MoS2) possess the unique ability to abstract a proton (H+) from water molecules, thereby facilitating catalytic hydrolysis reactions that cleave the phosphodiester bonds in DNA through the action of hydroxide ions. The enhanced proton absorption at Mo-terminated edges of MoS2 significantly reduces the activation energy required for the DNA hydrolysis reaction. Furthermore, the favorable interaction between the Mo-terminated edges and thymine nucleobases promotes both charge transfer and P-O bond cleavage, enabling targeted DNA hydrolysis at 'TTTTTTT' sequences under dark conditions. This discovery underscores the potential of MoS2 as a stable, efficient nanosystem for precise genetic editing, heralding advanced applications in the field of gene engineering. © 2025 The Author(s)

关键词： Activation energy

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Cr-modified CuAlBe shape memory alloy: Role of microstructure, thermodynamic parameters, superelasticity, dissipated energy and corrosion resistance

Journal of Alloys and Metallurgical Systems

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Journal of Alloys and Metallurgical Systems 2024年 7卷

作者： Silva, David D.S. Candido, Gemierson V.M. Alves, Ricardo F. Dias, Elisabeth A.M.G.S. Oliveira, Danniel F. Federal University of São Carlos Graduate Program in Materials Science and Engineering SP São Carlos13565-905 Brazil Colorado School of Mines George S. Ansell Department of Metallurgical and Materials Engineering GoldenCO80401 United States Federal University of Paraíba Graduate Program in Mechanical Engineering PB João Pessoa58051-900 Brazil Federal University of Rio Grande do Norte Graduate Program in Materials Science and Engineering RN Natal59078-970 Brazil Federal University of Paraíba Graduate Program in Materials Science and Engineering PB João Pessoa58051-900 Brazil

This study reports the effects of Cr addition on the microstructure, superelasticity and corrosion resistance improvement of CuAlBe shape memory alloy. Analysis via structural, morphological, thermal, mechanical and electrochemical characterizations were performed. The analyses revealed austenite as the stable phase at room temperature for all samples. The increase in the Cr content caused a slight increase in the recovery rate and dissipated energy. Electrochemical results demonstrate that a small addition of Cr (0.1–0.3 wt%) increase the corrosion resistance due the decreases of the corrosion current density and increase of the corrosion potential. © 2024 The Authors

关键词： Corrosion resistance

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Positive-tone Tin-oxo Nanoclusters for Extreme UV lithography 42

Positive-tone Tin-oxo Nanoclusters for Extreme UV lithograph...

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Advances in Patterning materials and Processes XLII

作者： Kim, Gayoung Ku, Yejin Jeon, Subin Lee, Jin-Kyun Lee, Seohyun Jung, Byung Jun Lee, Sung-Il Ryu, Choonghan Park, Kangho Jung, Yun Lim Jeong, Changyoung Choi, Jin Program in in Environment and Polymer Engineering Inha University Incheon22212 Korea Republic of Program in Semiconductor Convergence Inha University Incheon22212 Korea Republic of Department of Polymer Science and Engineering Inha University Incheon22212 Korea Republic of Department of Materials Science and Engineering University of Seoul Seoul02504 Korea Republic of Samsung Electronics Co. Ltd. Semiconductor R&D Center Suwon18448 Korea Republic of

ISBN: (纸本)9781510686427

In this study, we propose a strategy to achieve positive metal oxide resists (pMORs) based on tin-oxo nanoclusters (TOCs) for extreme ultraviolet (EUV) lithography in high-performance semiconductor integrated circuit manufacturing. TOC possesses Lewis acidic properties and becomes more strongly acidic upon ligand dissociation when exposed to high-energy radiation, such as electron beam (e-beam) and EUV. During the subsequent development process using an aqueous solution of tetramethylammonium hydroxide (TMAH), a Lewis base, the exposed regions undergo Lewis acid-base interactions, leading to increased hydrophilicity. Ultimately, this results in enhanced solubility, enabling the formation of positive-tone patterns. To address the limitations of TOCs, particularly in terms of process margin and chemical stability, we mixed TOCs with small organic molecules containing phenolic hydroxyl groups, which act as Lewis bases. This modification effectively mitigated the shortcomings of TOCs. A TOC formulation containing 10% dendritic polyphenol (DPP) exhibited an improved dissolution contrast while simultaneously enhancing chemical stability. Using this in EUV lithography, we successfully achieved high resolution positive-tone patterns with a line width of 13 nm. © 2025 SPIE.

关键词： Extreme ultraviolet lithography

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Electron Ptychography for Investigating Magnetic Textures in Micro- and Nano- Scale Magnets via Lorentz Transmission Electron Microscopy

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Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 1847-1848页

作者： Trujillo, Kayna L Mendoza Divan, Ralu N S Li, Yue Jiang, Yi McCray, Arthur R C Petford-Long, Amanda K. Phatak, Charudatta Department of Materials Science and Engineering Northwestern University Evanston IL United States Materials Science Division Argonne National Laboratory Lemont IL United States Center for Nanoscale Materials Argonne National Laboratory Lemont IL United States Advanced Photon Source Argonne National Laboratory Lemont IL United States Applied Physics Program Northwestern University Evanston IL United States

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Intercalated Graphene and Colloidal Quantum Dots as a novel Architecture for UV/ Vis/NIR Multispectral Photodetection

Intercalated Graphene and Colloidal Quantum Dots as a novel ...

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2024 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2024

作者： Shang, J.Y. Ahn, S. Shang, J.Y. Mena, O. Vazquez University of California Department of Nanoengineering 9500 Gilman DriveLa Jolla San Diego92093 United States Program in Materials Science and Engineering University of California 9500 Gilman DriveLa Jolla San Diego92093 United States

We present a compact hybrid architecture of intercalated graphene and PbS quantum dots with independent electrical contacts for each graphene layer that allowing for detection of different spectral bands for each grap... 详细信息

ISBN: (纸本)9798350373097

关键词： Nanocrystals

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Achieving Near-Intrinsic Exciton Linewidth at Room Temperature in Monolayer WS2 Coupled with a Mie Resonator

Achieving Near-Intrinsic Exciton Linewidth at Room Temperatu...

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CLEO: science and Innovations, S and I 2022

作者： Fang, Jie Yao, Kan Zheng, Yuebing Materials Science & Engineering Program Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Walker Department of Mechanical Engineering The University of Texas at Austin AustinTX78712 United States

ISBN: (纸本)9781557528209

Strong multiparticle interactions at room temperature (RT) lead to broadened homogeneous exciton linewidths in 2D semiconductors, degrading the quality of excitonic mode and emission. By coupling a Mie resonator with monolayer WS2, we achieve narrowed linewidths at RT, approaching the theoretical limit at 0 Kelvin. © Optica Publishing Group 2022, © 2022 The Author(s)

关键词： Linewidth

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Electronic structure and optical spectra of MSi2N4 (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study

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Journal of materials Chemistry C 2023年第43期11卷 15097-15105页

作者： Wu, Tzu-Cheng Liao, Yin-Song Kao, Jui-Cheng Chou, Jyh-Pin Department of Physics National Tsing Hua University Hsinchu300044 Taiwan The Affiliated Senior High School of National Taiwan Normal University Taipei10658 Taiwan Tsing Hua Interdisciplinary Program National Tsing Hua University Hsinchu300044 Taiwan Department of Materials Science and Engineering National Tsing Hua University Hsinchu300044 Taiwan Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Physics National Changhua University of Education Changhua50007 Taiwan

MoSi2N4 has outstanding potential for applications in electronics, spintronics, and semiconducting fabrication. This attractive scenario can be attributed to its remarkable electronic properties. In this study, we investigate the electronic structure and optical spectra of the MSi2N4 (M = Mo, Ta, and V) materials with single atom (H, N, and O) decoration using first-principles calculations. Pristine MoSi2N4 and VSi2N4 are semiconductors, and TaSi2N4 shows the half-metal properties. Decorating MoSi2N4 with single hydrogen and nitrogen atoms induces a magnetic moment. Single oxygen decorated TaSi2N4 does not change its intrinsic electronic properties, which is suitable for spintronic applications. On top of that, the semiconductor VSi2N4 can be turned into a half-metal via single hydrogen atom decoration. The absorption spectra demonstrate an enhancement in optical absorption for VSi2N4 after the decoration with a single nitrogen atom. Single atom decoration is one of the effective methods of tailoring the electronic properties of the two-dimensional MoSi2N4 family. Our findings can accelerate the development of the advanced electronic devices. © 2023 The Royal Society of Chemistry.

关键词： Silicon compounds

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