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Optical polarization manipulations with anisotropic nanostructures

PhotoniX 2024年第1期5卷 205-243页

作者： Zhancheng Li Wenwei Liu Yuebian Zhang Hua Cheng Shuang Zhang Shuqi Chen The Key Laboratory of Weak Light Nonlinear Photonics Ministry of EducationSchool of Physics and TEDA Institute of Applied PhysicsNankai UniversityTianjin 300071China School of Materials Science and Engineering Smart Sensing Interdisciplinary Science CenterNankai UniversityTianjin 300350China New Cornerstone Science Laboratory Department of PhysicsThe University of Hong KongPokfulamHong KongChina The Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006ShanxiChina

Over the past few decades,metasurfaces have revolutionized conventional bulky optics by providing an effective approach to manipulate optical waves at the subwavelength *** advancement holds great potential for compact,multifunctional,and reconfigurable optical ***,metasurfaces constructed with anisotropic nanostructures have exhibited remarkable capability in manipulating the polarization state of optical ***,they can be employed to achieve independent control of the amplitude and phase of optical waves in different polarization *** capability has garnered significant attention from the photonics community due to its unprecedented potential for polarization-selective and-multiplexed optical wave manipulation,offering versatile applications in optical imaging,communication,and *** paper reviews the design principles,representative works,and recent advancements in anisotropic nanostructures for optical polarization manipulation,detection,as well as polarization-selective and-multiplexed optical wave *** insights into further developments in this research area are provided.

关键词： Metasurface Anisotropic nanostructures Optical wave manipulation Polarization-multiplexed manipulation

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Measuring surface energy of solid surfaces using centrifugal adhesion balance

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Physical Review E 2024年第1期110卷 014801-014801页

作者： Appu Vinod Yuval Barak Sakshi Yadav Schmid Semih Gulec Yagnavalkya Bhimavarapu Akash Jena David Katoshevski Nitsa Haikin Rafael Tadmor Department of Mechanical Engineering Materials Transformation Material Science and Engineering Dan F. Smith Department of Chemical Engineering Department of Physics

The standard way to evaluate the solid surface energy using probe liquids relies on contact angle measurements. The measured contact angles rely on visible means and are different from their nanoscopic thermodynamic values. This compromises the surface-energy predictions so much that the surface energy-values can be hundreds of percentages higher than expected based on comparisons with different methods as reported in several studies. We consider the Owen-Wendt approach, which breaks the surface energy to polar and dispersive components, and present a technique for measuring surface energy of solids using probe liquids. Our method avoids the need to measure contact angles; instead, it uses solid-liquid work of adhesion measurements which are performed using a centrifugal adhesion balance. In agreement with the studies mentioned above, we found that indeed, the surface energies of the measured solids are significantly lower than those based on contact angle measurements. More importantly we found that our method results in a reasonable breakdown of the surface energy to polar and dispersive components with a higher polar component for more polar solids. This is in contrast with the surface energy based on contact angle measurements for which the breakdown did not make sense, i.e., the measurements reflected higher polar components of the surface energy for less polar solids.

关键词： Adhesives Coatings

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General Theory for Longitudinal Nonreciprocal Charge Transport

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Physical Review Letters 2024年第9期133卷 096802页

作者： Hong Jian Zhao Lingling Tao Yuhao Fu Laurent Bellaiche Yanming Ma Key Laboratory of Material Simulation Methods and Software of Ministry of Education College of Physics School of Physics Smart Ferroic Materials Center Physics Department and Institute for Nanoscience and Engineering Department of Materials Science and Engineering International Center of Future Science State Key Laboratory of Superhard Materials College of Physics

The longitudinal nonreciprocal charge transport (NCT) in crystalline materials is a highly nontrivial phenomenon, motivating the design of next generation two-terminal rectification devices (e.g., semiconductor diodes beyond PN junctions). The practical application of such devices is built upon crystalline materials whose longitudinal NCT occurs at room temperature and under low magnetic field. However, materials of this type are rather rare and elusive, and theory guiding the discovery of these materials is lacking. Here, we develop such a theory within the framework of semiclassical Boltzmann transport theory. By symmetry analysis, we classify the complete 122 magnetic point groups with respect to the longitudinal NCT phenomenon. The symmetry-adapted Hamiltonian analysis further uncovers a previously overlooked mechanism for this phenomenon. Our theory guides the first-principles prediction of longitudinal NCT in multiferroic ϵ−Fe2O3 semiconductor that possibly occurs at room temperature, without the application of external magnetic field. These findings advance our fundamental understandings of longitudinal NCT in crystalline materials, and aid the corresponding materials discoveries.

关键词： Antiferromagnets Multiferroics First-principles calculations k dot p method

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Second dome of superconductivity in YBa2Cu3O7 at high pressure

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Physical Review B 2024年第2期110卷 L020502-L020502页

作者： Johannes Nokelainen Matthew E. Matzelle Christopher Lane Nabil Atlam Ruiqi Zhang Robert S. Markiewicz Bernardo Barbiellini Jianwei Sun Arun Bansil Department of Physics Quantum Materials and Sensing Institute Northeastern University Burlington Massachusetts 01803 USA Department of Physics and Astrophysics Department of Physics School of Engineering Science Theoretical Division Department of Physics and Engineering Physics

Evidence is growing that a second dome of high-Tc superconductivity can be accessed in the cuprates by increasing the doping beyond the first dome. Here, we use ab initio methods without invoking any free parameters, such as the Hubbard U, to reveal that pressure could turn YBa2Cu3O7 into an ideal candidate for second dome superconductivity, displaying the predicted signature of strongly hybridized dx2−y2 and dz2 orbitals. Notably, pressure is found to induce a phase transition replacing the antiferromagnetic phases with an orbitally degenerate d−d phase. Our study suggests that the origin of the second dome is correlated with the oxygen-hole fraction in the CuO2 planes and the collapse of the pseudogap phase.

关键词： Doping effects Electrical properties Electronic structure Fermi surface Flat bands Magnetic phase transitions Pairing mechanisms Pressure effects Superconducting phase transition Charge-transfer insulators Cuprates High-temperature superconductors Magnetic systems Mott insulators Band structure methods Density functional theory First-principles calculations Pressure techniques Tight-binding model

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Prediction of s±-Wave Superconductivity Enhanced by Electronic Doping in Trilayer Nickelates La4Ni3O10 under Pressure

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Physical Review Letters 2024年第13期133卷 136001页

作者： Yang Zhang Ling-Fang Lin Adriana Moreo Thomas A. Maier Elbio Dagotto Department of Physics and Astronomy Materials Science and Technology Division Computational Sciences and Engineering Division

Motivated by the recently reported signatures of superconductivity in trilayer La4Ni3O10 under pressure, we comprehensively study this system using ab initio and random-phase approximation techniques. Without electronic interactions, the Ni d3z2−r2 orbitals show a bonding-antibonding and nonbonding splitting behavior via the O pz orbitals inducing a “trimer” lattice in La4Ni3O10, analogous to the dimers of La3Ni2O7. The Fermi surface consists of three electron sheets with mixed eg orbitals, and a hole and an electron pocket made up of the d3z2−r2 orbital, suggesting a Ni two-orbital minimum model. In addition, we find that superconducting pairing is induced in the s±-wave channel due to partial nesting between the M=(π,π) centered pockets and portions of the Fermi surface centered at the Γ=(0,0) point. With changing electronic density n, the s± instability remains leading and its pairing strength shows a domelike behavior with a maximum around n=4.2 (∼6.7% electron doping). The superconducting instability disappears at the same electronic density as that in the new 1313 stacking La3Ni2O7, correlated with the vanishing of the hole pocket that arises from the trilayer sublattice, suggesting that the high-Tc superconductivity of La3Ni2O7 does not originate from a trilayer and monolayer structure. Furthermore, we confirm the experimentally proposed spin state in La4Ni3O10 with an in-plane (π, π) order and antiferromagnetic coupling between the top and bottom Ni layers, and spin zero in the middle layer.

关键词： Multiband superconductivity Pairing mechanisms Superconductivity s-wave High-temperature superconductors Nickelates Strongly correlated systems Unconventional superconductors First-principles calculations Hubbard model Random phase approximation Wannier function methods

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Machine learning electron-phonon interactions in two-dimensional semiconducting materials: The case of zero-point renormalization

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Physical Review materials 2024年第10期8卷 L101001页

作者： Anubhab Haldar Quentin Clark Marios Zacharias Feliciano Giustino Sahar Sharifzadeh Department of Electrical and Computer Engineering Department of Philosophy Oden Institute for Computational Engineering and Sciences Department of Physics Division of Materials Science and Engineering

We utilize first-principles theory to investigate the role of electron-phonon interactions within a dataset of monolayer materials. Using density functional theory to describe excited-state transitions and the special displacement method to describe the role of phonons, we analyze the relationship between simple physical observables and electron-phonon coupling strength. For over 100 materials, we compute the band gap renormalization due to zero-point vibrational (ZPR) motion as a measure of electron-phonon interactions and train a machine learning model based on physical parameters. We demonstrate that the strength of electron-phonon interactions is highly dependent on the band gap, dielectric constant, and degree of ionicity, all of which can be physically justified. We then apply this model to 1302 2D materials, predicting the ZPR, which for five randomly selected materials tested agree well with the first-principles predictions. This work provides an approach for quantitatively predicting the ZPR as a measure of electron-phonon interactions in 2D materials.

关键词： Electron-phonon coupling Electronic structure 2-dimensional systems Machine learning

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Solution-Processed Flexible Temperature Sensor Array for Highly Resolved Spatial Temperature and Tactile Mapping Using ESN-Based Data Interpolation

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ACS Applied materials and Interfaces 2024年第15期16卷 19198-19204页

作者： Nakamura, Haruki Ezaki, Ryota Matsumura, Guren Chung, Chia-Chen Hsu, Yu-Chieh Peng, Yu-Ren Fukui, Akito Chueh, Yu-Lun Kiriya, Daisuke Takei, Kuniharu Graduate School of Information Science and Technology Hokkaido University Sapporo060-0814 Japan Department of Physics and Electronics Osaka Metropolitan University Sakai599-8531 Japan Department of Materials Science and Engineering National Tsing-Hua University Hsinchu30013 Taiwan College of Semiconductor Research National Tsing-Hua University Hsinchu30013 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of Graduate School of Arts and Sciences The University of Tokyo Tokyo153-8902 Japan

High-performance flexible temperature sensors are crucial in various technological applications, such as monitoring environmental conditions and human healthcare. The ideal characteristics of these sensors for stable temperature monitoring include scalability, mechanical flexibility, and high sensitivity. Moreover, simplicity and low power consumption will be essential for temperature sensor arrays in future integrated systems. This study introduces a solution-based approach for creating a V2O5 nanowire network temperature sensor on a flexible film. Through optimization of the fabrication conditions, the sensor exhibits remarkable performance, sustaining long-term stability (>110 h) with minimal hysteresis and excellent sensitivity (∼−1.5%/°C). In addition, this study employs machine learning techniques for data interpolation among sensors, thereby enhancing the spatial resolution of temperature measurements and adding tactile mapping without increasing the sensor count. Introducing this methodology results in an improved understanding of temperature variations, advancing the capabilities of flexible-sensor arrays for various applications. © 2024 American Chemical Society.

关键词： Nanowires

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Effects of Extreme Ultraviolet Radiation on Transition Metal Dichalcogenides: Investigation of Physical and Electrical Properties

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ACS Applied Electronic materials 2024年第8期6卷 5640-5650页

作者： Kao, Man-Yun Hsu, Che-Hao Huang, Yu-Qi Hsu, Yu-Chieh Liu, Ming-Jin Chen, Chieh-Ting Lai, Po-Chien Lu, Ming-Yen Wu, Pin-Jiun Chueh, Yu-Lun Department of Materials Science and Engineering National Tsing Hua University Hsinchu30013 Taiwan Colleage of Semiconductor Research National Tsing-Hua University Hsinchu30013 Taiwan Department of Physics National Sun Yat-Sen University Kaohsiung80424 Taiwan National Synchrotron Radiation Research Center Hsinchu300092 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of Center for Nanotechnology Center for Materials Science Center for Microsystem National Tsing-Hua University Hsinchu30013 Taiwan

Transition metal dichalcogenides (TMDCs) have gained a lot of attention due to their versatile applications in electronic and sensing devices. Furthermore, TMDCs are the candidates to replace Si in the semiconductor industry. However, little research has focused on TMDCs under extreme ultraviolet (EUV) radiation, which will be the mainstream lithography technique in semiconductor processes. Here, three types of representative TMDC materials, MoS2, WS2, and PtSe2 films, were subjected to synchrotron-radiation-generated EUV light. Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy were used to analyze the elemental concentrations and bonding environment in the materials before and after EUV irradiation. The results showed that chalcogenide vacancies in the two-dimensional (2D) TMDCs were the dominant irradiation defects. Defects were present at all the set EUV doses, and the defect content affected the resistance of the material. This study demonstrated the defects in 2D TMDCs caused by EUV irradiation and showed the potential of EUV radiation modulating the defects and the properties of materials. © 2024 The Authors. Published by American Chemical Society.

关键词： Irradiation

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Coaxial boron nitride nanotubes as interfacial dielectric layers to lower interface trap density in carbon nanotube transistors

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Nano Research 2023年第11期16卷 12840-12848页

作者： Keigo Otsuka Taiki Sugihara Taiki Inoue Weijie Jia Satoru Matsushita Takanobu Saito Minhyeok Lee Takashi Taniguchi Kenji Watanabe Gregory Pitner Ming-Yang Li Tzu-Ang Chao Rong Xiang Shohei Chiashi Shigeo Maruyama Department of Mechanical Engineering The University of TokyoTokyo 113-8656Japan Department of Applied Physics Osaka UniversityOsaka 565-0871Japan Research Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Research Center for Electronic and Optical Materials National Institute for Materials ScienceTsukuba 305-0044Japan Corporate Research Taiwan Semiconductor Manufacturing CompanySan JoseCA 95134USA Corporate Research Taiwan Semiconductor Manufacturing CompanyHsinchu 30078

A semiconductor/dielectric interface is one of the dominant factors in device characteristics,and a variety of oxides with high dielectric constants and low interface trap densities have been used in carbon nanotube *** the crystal structure of nanotubes with no dangling bonds,there remains room to investigate unconventional dielectric ***,we fabricate carbon nanotube transistors with boron nitride nanotubes as interfacial layers between channels and gate dielectrics,where a single semiconducting nanotube is used to focus on switching behaviors at the subthreshold *** subthreshold swing of 68 mV·dec^(−1)is obtained despite a 100-nm-thick Sio_(2)dielectric,corresponding to the effective interface trap density of 5.2×10^(11)cm^(−2)·eV^(−1),one order of magnitude lower than those of carbon nanotube devices without boron nitride *** interfacial layers also result in the mild suppression of threshold voltage variation and *** achieve Ohmic contacts through the selective etching of boron nitride nanotubes with XeF2 gas,overcoming the trade-off imposed by wrapping the inner *** impacts of fluorinating carbon nanotubes on device performances are also confirmed as long as the etching is applied exclusively at source/drain *** results represent an important step toward nanoelectronics that exploit the advantage of one-dimensional van der Waals heterostructures.

关键词： carbon nanotubes hexagonal boron nitride van der Waals interfaces field-effect transistors subthreshold swing selective etching

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Surface-dominated conductance scaling in Weyl semimetal NbAs

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npj Computational materials 2024年第1期10卷 2370-2378页

作者： Sushant Kumar Yi-Hsin Tu Sheng Luo Nicholas A.Lanzillo Tay-Rong Chang Gengchiau Liang Ravishankar Sundararaman Hsin Lin Ching-Tzu Chen Department of Materials Science&Engineering Rensselaer Polytechnic Institute1108th StTroyNY 12180USA IBM Thomas J.Watson Research Center 1101 Kitchawan RoadYorktown HeightsNY 10598USA Department of Physics Cheng Kung UniversityTainan CityTaipei Department of Electrical and Computer Engineering College of Design and EngineeringNational University of SingaporeSingaporeSingapore IBM Research 257 Fuller RoadAlbanyNY 12203USA Institute of Physics Academia SinicaTaipeiTaipei

Protected surface states arising fromnon-trivial bandstructure topology in semimetals can potentially enable advanced device functionalities in compute,memory,interconnect,sensing,and *** necessitates a fundamental understanding of surface-state transport in nanoscale topological ***,we investigate quantum transport in a prototypical topological semimetal NbAs to evaluate the potential of this class of materials for beyond-Cu interconnects in highly-scaled integrated *** density functional theory(DFT)coupled with non-equilibrium Green’s function(NEGF)calculations,we show that the resistance-areaRAproduct in NbAs films decreases with decreasing thickness at the nanometer scale,in contrast to a nearly constant RA product in ideal Cu *** anomalous scaling originates from the disproportionately large number of surface conduction states which dominate the ballistic conductance by up to 70%in NbAs thin *** also show that this favorable RA scaling persists even in the presence of surface defects,in contrast to RA sharply increasing with reducing thickness for films of conventional metals,such as Cu,in the presence of surface *** results underscore the potential of topological semimetals as future back-end-of-line(BEOL)interconnect metals.

关键词： scaling topological conductance

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