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Growth, optimization and high-temperature performance of GeO2/Ga2O3 MOSCAPs

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SSRN 2024年

作者： Manikanthababu, N. Karmakar, Subrata Shiam, Ishtiaq Firoz Emu, Injamamul Hoque Haque, Ariful Droopad, Ravi Electrical Engineering Ingram School of Engineering Texas State University San MarcosTX78666 United States Materials Science Engineering & Commercialization Program Texas State University San MarcosTX78666 United States

In this study, GeO2 thinfilms were grown by pulsed laser deposition (PLD) technique on β-Ga2O3, (―201) single crystal substrates to fabricate metal-oxide-semiconductor capacitors (MOSCAPs), and test these devices at high temperatures. The GeO2 thinfilms with bandgap of 5.11 eV are amorphous in nature, confirmed by X-ray diffraction, and the X-ray photoelectron spectroscopy (XPS) confirms the formation of GeO2. The Ge 3d deconvoluted peak at 32.4 eV confirms the GeO2 bonding, with an additional peak found at 30.9 eV resembling a small portion of GeO2-x. The Au/GeO2/Ga2O3 MOSCAPs were fabricated to test the high-temperature performance up to 300 oC. The I–V graphs showed an increase in the reverse leakage current by 3.9×104 A (nearly four orders of magnitude) as the temperature raised from room temperature (RT) to 300 oC. Since the GeO2-x presence, the current conduction mechanism of Poole-Frenkel emission was utilized to get the trap level of 0.8 V (below the conduction band of GeO2) with an activation energy of 0.55 eV. C–V measurements also show a significant contribution of defects in the flat-band voltage shift and the change of the slopes. This indicates an increase in the oxide and interface-trapped charges. The density of oxide-trapped charges (DO) increased from 3.9×1012 cm-2 to 1.3×1013 cm-2, as the temperature reached 300 oC. Similarly, the density of interface-trapped charges (DI) increased from 3.4×1012 cm-2 at RT to 1.1×1013 cm-2 at 300 oC. © 2024, The Authors. All rights reserved.

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Corrigendum to “Time-course concentration of ethanol, acetaldehyde and acetate in rat brain dialysate following alcohol self-administration” [Alcohol 123 (2025) 69–76]

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Alcohol 2025年 125卷 53-54页

作者： Tse-Ang Lee Hongjoo J. Lee Regina A. Mangieri Rueben Gonzales Heba Ajmal Tanya Hutter Department of Mechanical Engineering The University of Texas at Austin Austin TX 78712 USA Department of Psychology The University of Texas at Austin Austin TX 78712 USA College of Pharmacy Division of Pharmacology and Toxicology The University of Texas at Austin Austin TX 78712 USA Department of Neuroscience The University of Texas at Austin Austin TX 78712 USA Materials Science and Engineering Program and Texas Materials Institute The University of Texas at Austin Austin TX 78712 USA

N- and P-Type Doping of Diamonds: A Review

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SSRN 2024年

作者： Sultana, Maria Karmakar, Subrata Haque, Ariful Ingram School of Engineering Texas State University San MarcosTX78666 United States Materials Science Engineering & Commercialization Program Texas State University San MarcosTX78666 United States

Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features- a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm2/V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications. © 2024, The Authors. All rights reserved.

关键词： Diamonds

MECHANICAL AND ELECTRICAL CHARACTERIZATION OF 3D PRINTED POLYAMIDE 6 NANOGRAPHENE COMPOSITE FOR ELECTROSTATIC DISCHARGE APPLICATIONS

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MECHANICAL AND ELECTRICAL CHARACTERIZATION OF 3D PRINTED POL...

SAMPE 2022 Conference and Exhibition

作者： Arigbabowo, Oluwasola K. Omer, Liam Tate, Jitendra Materials Science Engineering and Commercialization Program Texas State University 601 University Drive San MarcosTX78666 United States Ingram School of Engineering Texas State University 601 University Drive San MarcosTX78666 United States

ISBN: (纸本)9781934551417

Polyamide 6 (PA 6) is an engineering thermoplastic that can be used to develop polymer nanocomposite with high potential in electrostatic discharge applications. By the incorporation of nanofillers in PA 6 to enhance multifunctional properties, PA 6 nanocomposites can serve as technological alternatives to commercial thermoplastics for 3D printing via fused deposition modelling (FDM). Hence, this study evaluated the mechanical and electrical properties of 3D printed PA6 nanographene composites for electrostatic discharge applications. 2, 4 and 6 wt.% of Graphene Nanoplatelets (GNP) was compounded with PA6 using co-rotating twin screw extruder to produce 1.75mm diameter monofilaments for FDM 3D printing. The test samples were printed using commercial-off-the-shelf (COTS) 3D printer, Lulzbot TAZ 6 FDM printer. Morphology, mechanical and electrical characterization was carried out according to their respective ASTM standard. An improvement in tensile and flexural properties were observed with an increase in nanographene addition, and a maximum improvement of 61.4 and 55.9% in tensile and flexural modulus respectively was recorded at 6wt% loading level. Electrical conduction of the insulative polyamide 6 matrix was enhanced by an appreciable reduction of its volume resistivity to 1011 Ω.cm by 2wt% nanographene loading, which seems promising for manufacturing static discharge products. Copyright 2022. Used by the Society of the Advancement of Material and Process engineering with permission.

关键词： Graphene

Epitaxial Growth and Characterization of Copper Gallate (CuGa2O4) Thin Films by Pulsed Laser Deposition

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SSRN 2024年

作者： Emu, Injamamul Hoque Samuels, Brian C. Karmakar, Subrata Hamid, Md. Abdul Shiam, Istiaq Firoz Sarkar, Pallab Kumar Tasnim, Ayesha Haque, Ariful Droopad, Ravi Ingram School of Engineering Texas State University San MarcosTX78666 United States Materials Science Engineering & Commercialization Program Texas State University San MarcosTX78666 United States

High-quality crystalline copper gallate (CuGa2O4) thin films were grown on c-plane sapphire substrates using the pulsed laser deposition (PLD) technique by optimizing the growth parameters (i.e., temperature, oxygen chamber pressure, and laser energy density). The obtained XRD patterns validated that the preferred orientation of the crystalline CuGa2O4 thin film is along the [111] direction, and the crystallinity of the films improved with increasing substrate temperature while maintaining a constant O2 pressure, as assessed by measuring the full width at half maximum (FWHM) of the prominent (222) plane. Reducing the oxygen pressure leads to the emergence of β-Ga2O3 peaks rather than the CuGa2O4 peaks due to the incomplete oxidation of copper (Cu). Subsequent XRD phi (φ) scans revealed a sixfold rotational symmetry of CuGa2O4 and a 30º epitaxial relationship between the film and the sapphire substrate. X-ray photoelectron spectroscopy (XPS) spectra confirmed the presence of Cu1+, Cu2+, and Ga3+ oxidation states in the films. Increasing laser energy density resulted in the complete oxidation of Cu and an increase in the film thickness from 51.8 nm to 183.4 nm. The direct bandgap of CuGa2O4 films was determined to be approximately 4.51±0.01 eV by analyzing the UV-Vis absorbance spectra using the Tauc equation. The refractive index was found to be approximately 2.05±0.01 based on the spectroscopic ellipsometry data. While the impact of increasing laser energy density was negligible on the parameters such as crystal structure, rotational symmetry, oxidation states of gallium (Ga), oxygen (O), bandgap, and refractive index of CuGa2O4 thin film, notable alterations in the oxidation state of Cu and film thickness were observed. © 2024, The Authors. All rights reserved.

关键词： Thin films

IR spectroscopy of aqueous ethanol solutions: Dispersive versus single-chip FT-IR

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IR spectroscopy of aqueous ethanol solutions: Dispersive ver...

Applied Industrial Spectroscopy, AIS 2021 - Part of Optical Sensors and Sensing Congress 2021

作者： Lee, Tse-Ang Chowdhury, Aminur Rashid Hutter, Tanya Department of Mechanical Engineering University of Texas at Austin AustinTX78712 United States Materials Science and Engineering Program Texas Materials Institute University of Texas at Austin AustinTX78712 United States

Near-infrared spectra of aqueous ethanol solutions of different concentrations and optical pathlengths were tested and compared two different types of infrared spectrometers. Optimal operating conditions and performan... 详细信息

ISBN: (纸本)9781557528209

关键词： Ethanol

Polarization-dependent optical engineering of ferroelectric domains

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ChemPhysMater 2023年第4期2卷 346-350页

作者： Shan Liu Yan Sheng Wieslaw Krolikowski Department of Quantum Science and Technology Research School of PhysicsAustralian National UniversityCanberra 2601Australia Department of Electronic Materials Engineering Research School of PhysicsAustralian National UniversityCanberra 2601Australia Laboratory of Infrared Materials and Devices Research Institute of Advanced TechnologiesNingbo UniversityNingbo 315211China Science Program Texas A&M University at QatarDoha 23874Qatar

Ferroelectric domain engineering with infrared femtosecond laser pulses has been a powerful technique to achieve a spatially modulated second-order nonlinear coefficient in three ***,studies regarding the in-fluence of laser writing conditions on the light-induced ferroelectric domain inversion remain ***,an experimental study to reveal the role of laser polarization in light-induced domain inversions is *** dependence of the optical threshold and maximal writing depth of inverted domains on light polarization is ex-perimentally *** results are explained by considering the second-order nonlinear optical properties and birefringence-induced focus splitting in the *** findings are useful in fabricating high-quality and large-scale ferroelectric domain structures for applications in optics,electronics,and quantum technologies.

关键词： Nonlinear photonic crystals Ferroelectric domain engineering Quasi-phase matching Harmonic generation

Interfacial challenges for all-solid-state batteries based on sulfide solid electrolytes

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Journal of Materiomics 2021年第2期7卷 209-218页

作者： Shuo Wang Ruyi Fang Yutao Li Yuan Liu Chengzhou Xin Felix H.Richter Ce-Wen Nan State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China Materials Science and Engineering Program and Texas Materials Institute The University of Texas at AustinAustinTX78712United States Institute of Physical Chemistry&Center for Materials Research Justus-Liebig-University GiessenHeinrich-Buff-Ring 17D-35392GiessenGermany State Key Laboratory of Bio-fibers and Eco-textiles Institute of Biochemical EngineeringCollege of Materials Science and EngineeringQingdao UniversityQingdao266071China

Sulfide solid electrolytes(e.g.,lithium thiophosphates)have the highest room-temperature ionic conductivity(-10^(-2) S cm^(-1))among solid Li-ion conductors so far,and thus have attracted ever-increasing attention for high energy-density and safety all-solid-state batteries(ASSBs).However,interfacial issues between sulfide electrolytes and electrodes have been the main challenges for their applications in *** interfacial instabilities would occur due to side reactions of sulfides with electrodes,poor solid-solid contact,and lithium dendrites during charge/discharge *** this review,we analyze the interfacial issues in ASSBs based on sulfide electrolytes,and in particular,discuss strategies for solving these interfacial issues and stabilize the electrode-electrolyte ***,a perspective of the interfacial engineering for sulfide-based ASSBs is provided.

关键词： Sulfide solid electrolytes Interfacial engineering All-solid-state batteries Li-metal protection

Enhancing Sp3 Content in Diamond-Like Carbon Thin Film Electrodes by Pulsed Laser Annealing for Durable Charge Storage Performance

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SSRN 2024年

作者： Karmakar, Subrata Halim, Md Abdul Sultana, Maria Sarkar, Pallab Kumar Emu, Injamamul Hoque Jaimes-Leal, Ana Haque, Ariful Electrical Engineering Ingram School of Engineering Texas State University TX78666 United States Civil Engineering Ingram School of Engineering Texas State University TX78666 United States Materials Science Engineering and Commercialization Program Texas State University TX78666 United States

In this work, diamond-like carbon (DLC) thin film electrodes were grown on Si substrate by pulsed laser deposition (PLD) technique, and the implication of pulsed laser annealing (PLA) treatment on their electrochemical supercapacitor performance was examined by two electrode systems in 1M Na2SO4 electrolyte solutions. The Raman spectra confirm signature of the D and G peaks of pristine DLC film at ~1352 cm-1 (1356 cm-1 after PLA) and 1591 cm-1 (1589 cm-1 after PLA), and appearance of minor T2g (diamond) (1332 cm-1) peaks with an increment of the sp3 content after PLA treatment. The X-ray photoelectron spectroscopy (XPS) spectra were deconvoluted into three different contributions C-C (sp2), C-C (sp3), and C-O, and their sp3 percentages were estimated ~48.6%, and 64.5% before and after annealing. The area under cyclic voltammetry (CV) curve and galvanostatic charging discharging (GCD) performance of PLA-treated DLC film were improved and the highest areal-specific capacitance was obtained to be ~48.25 mF/cm2 for scan rate of 5 mV/s and 36.01 mF/cm2 for current density of 2 mA/cm2, respectively. Excellent charging discharging cyclic stability of PLA treated electrode was observed over 5000 cycles, and Coulombic efficiency and capacitance retention were determined to be ~93.5% and ~97.3%, respectively. © 2024, The Authors. All rights reserved.

关键词： Diamonds