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Nonlinear optical characterization of Ag2Se and PbSe colloidal quantum dots using 1030 nm femtosecond pulses

Optical and Quantum Electronics 2024年第12期56卷 1-17页

作者： Ganeev, Rashid A. Bejoy, Namitha Brijit Piatkowski, Piotr A. Boltaev, Ganjaboy S. Aslanov, Sergey V. Zvyagin, Andrey I. Smirnov, Mikhail S. Ovchinnikov, Oleg V. Alnaser, Ali S. Materials Research Center College of Arts and Science American University of Sharjah Sharjah26666 United Arab Emirates Department of Optics and Spectroscopy Voronezh State University Voronezh394018 Russia TIIAME National Research University Tashkent100000 Uzbekistan Department of Sciences Western Caspian University BakuAZ1001 Azerbaijan Department of Physics College of Arts and Sciences American University of Sharjah Sharjah26666 United Arab Emirates Materials Science and Engineering Program College of Arts and Sciences American University of Sharjah Sharjah26666 United Arab Emirates

Nonlinear optical characteristics of chemically prepared silver selenide (Ag2Se, 3.7 nm) and lead selenide (PbSe, 6.3 nm) colloidal quantum dots (QDs) are investigated using the 1030 nm femtosecond pulses. Ag2Se QDs demonstrated two-photon absorption followed by saturable absorption. PbSe QDs initially showed the saturable absorption at small intensities of 1030 nm probe pulses, followed by reverse saturable absorption at stronger excitation. The difference in the positive nonlinear optical absorption mechanisms in these two QD colloids is attributed to their different bandgaps. The studied QD colloids exhibited the Kerr-induced positive nonlinear refraction. Transient absorption studies of the QDs showed that photoexcitation creates a hot exciton that forms band-edge exciton within 1.2 ps after excitation. Most of the electron-hole pairs further recombine through band-to-band recombination with a time constant of 1490 ps. Furthermore, the results from the transient absorption studies indicate the contribution of trap-assisted recombination occurs on a time scale exceeding that of the experimental time window. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

关键词： Semiconductor quantum dots

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Unravelling the strong interplay for interfacial magnetic switching in metal-organic-based spintronics

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Journal of materials Chemistry C 2024年第11期12卷 3931-3942页

作者： Chen, Wan-Ting Yu, Li-Chung Lin, Jiu-Hua Cheng, Su Ling Shiu, Hung Wei Lai, Yu-Ling Chu, Ying-Hao Chin, Yi-Ying Wang, Jeng-Han Hsu, Yao-Jane National Synchrotron Radiation Research Center Hsinchu30076 Taiwan Graduate Program for Science and Technology of Accelerator Light Sources National Yang Ming Chiao Tung University Hsinchu30076 Taiwan Department of Materials Science and Engineering National Tsing Hua University Hsinchu30013 Taiwan Department of Chemistry National Taiwan Normal University Taipei11677 Taiwan Department of Photonics National Cheng Kung University Tainan70101 Taiwan Department of Physics National Chung Cheng University Chiayi62102 Taiwan

Organic semiconductors are promising building blocks for multifunctional spintronics. The spinterface plays a key role in affecting the magnetic properties of the performance of spin-based devices. Herein, we reveal the strong interfacial interplay affecting the magnetic switching at the interface of the synthetic paramagnetic tris(8-hydroxyquinoline)iron(iii) (Feq3) layer on the ferromagnetic surface. In combination with synchrotron-based analysis and density functional theory (DFT) calculations, we observed that the robust magnetic interactions of the Co/Feq3 system were strongly influenced by the interfacial reaction between Co and Feq3. As the charge transferred from the contacted Co to Feq3, the central iron was reduced from Fe(iii) to Fe(ii) and hybridized with the 8-hydroxyquinoline, causing spin polarization at the interface. The reduced central Fe(ii) exhibited apparent ferromagnetic ordering after contact with the ferromagnetic Co substrate. With increasing the Feq3 layer thickness, the central Fe reverted to its original Fe(iii) state, resulting in the disappearance of ferromagnetic ordering. The thickness dependence of the Feq3 layer on the magnetic response could be used to tune the spinterface properties and thus the interfacial magnetic interplay. These findings reveal the effect of the strong interfacial redox on the spinterface and open up a promising approach for the use of metal-organic materials in oragnic spintronic devices. © 2024 The Royal Society of Chemistry.

关键词： Organometallics

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Design of Mixed-Dimensional QDs/MoS2/TiO2 Heterostructured Resistive Random-Access Memory with Interfacial Analog Switching Characteristics for Potential Neuromorphic Computing

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ACS Applied Electronic materials 2024年第3期6卷 1581-1589页

作者： Tang, Shin-Yi Shih, Yu-Chuan Shen, Ying-Chun Cyu, Ruei-Hong Chen, Chieh-Ting Yang, Tzu-Yi Chaudhary, Mayur Peng, Yu-Ren Kuo, Yao-Ren Miao, Wen-Chien Yu, Yi-Jen Lee, Ling Kuo, Hao-Chung Chueh, Yu-Lun Department of Materials Science and Engineering National Tsing Hua University Hsinchu30013 Taiwan College of Semiconductor Research National Tsing Hua University Hsinchu30013 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Ph. D. Program in Prospective Functional Materials Industry National Tsing Hua University Hsinchu30013 Taiwan Department of Electrophysics College of Science National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Instrument Center National Tsing Hua University Hsinchu30013 Taiwan Department of Photonics Institute of Electro-Optical Engineering National Yang-Ming Chiao Tung University Hsinchu30010 Taiwan Department of Physics National Sun Yat-Sen University Kaohsiung80424 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nanoscale nonvolatile memory devices and neuromorphic computing applications. In this study, we developed a novel mixed-dimensional design for RRAM devices, incorporating zero-dimensional quantum dots (QDs), two-dimensional MoS2, and a TiO2 switching layer to achieve prominent interfacial switching behaviors. Compared with typical filamentary RRAM devices, the proposed heterostructure featured a light-sensitive QDs/MoS2 layer that allowed for bias-controllable resistive changes during the set and reset processes without abrupt switching. This was endowed by effective electron-hole pair separations upon excitation and the generation of a thin molybdenum oxide (MoOx) layer due to the accumulation of oxygen ions at the interface between MoS2 and TiO2. The ITO/QDs/MoS2/TiO2/Pt RRAM device exhibited an on/off ratio of 10 with improved endurance under 515 nm laser illumination and wavelength-dependent resistive switching behavior, making it useful for multilevel storage. Furthermore, the heterostructured device demonstrated synaptic characteristics with enhanced potentiation and depression nonlinearities and asymmetry factors, revealing its potential for future neuromorphic applications. © 2024 American Chemical Society.

关键词： Titanium dioxide

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Atomic Ionization: sd energy imbalance and Perdew-Zunger self-interaction correction energy penalty in 3d atoms

arXiv

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arXiv 2024年

作者： Maniar, Rohan Shukla, Priyanka B. Johnson, J. Karl Jackson, Koblar A. Perdew, John P. Department of Physics and Engineering Physics Tulane University New OrleansLA70118 United States Department of Chemical & Petroleum Engineering University of Pittsburgh PittsburghPA15261 United States Physics Department Science of Advanced Materials Program Central Michigan University Mount PleasantMI48859 United States

To accurately describe the energetics of transition metal systems, density functional approximations (DFAs) must provide a balanced description of s- and d- electrons. One measure of this is the sd transfer error, which has previously been defined as E(3dn−14s1)−E(3dn−24s2). Theoretical concerns have been raised about this definition due to its evaluation of excited-state energies using ground-state DFAs. A more serious concern appears to be strong correlation in the 4s2 configuration. Here we define a ground-state measure of the sd energy imbalance, based on the errors of s- and d-electron second ionization energies of the 3d atoms, that effectively circumvents the aforementioned problems. We find an improved performance as we move from LSDA to PBE to r2SCAN for first-row transition metal atoms. However, we find large (∼ 2 eV) ground-state sd energy imbalances when applying a Perdew-Zunger 1981 self-interaction correction. This is attributed to an "energy penalty" associated with the noded 3d orbitals. A local scaling of the self-interaction correction to LSDA results in a balance of s- and d-errors. Copyright © 2024, The Authors. All rights reserved.

关键词： Atoms

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Low-loss, nonvolatile tuning of Bragg structures with Sb2Se3

Low-loss, nonvolatile tuning of Bragg structures with Sb2Se3

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CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics

作者： Nobile, Nicholas A. Lian, Chuanyu Sun, Hongyi Huang, Yi-Siou Mills, Brian Popescu, Cosmin Constantin Callahan, Dennis Hu, Juejun Ríos Ocampo, Carlos A. Youngblood, Nathan Electrical & Computer Engineering Department University of Pittsburgh PittsburghPA15213 United States Department of Materials Science & Engineering University of Maryland College ParkMD20742 United States Institute for Research in Electronics and Applied Physics University of Maryland College ParkMD20742 United States Department of Materials Science & Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Draper Scholar Program The Charles Stark Draper Laboratory Inc. CambridgeMA02139 United States The Charles Stark Draper Laboratory Inc. CambridgeMA02139 United States

Sb2Se3 is used to switch between broadband transparency and enhanced index contrast in two device types leveraging Bragg gratings for tunable stop- and pass-band functionalities. Experimental results highlight fabrication challenges and efficacy of the designs. © Optica Publishing Group 2024, © 2024 The Author(s)

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Tuning of Carrier Envelope Offset Frequency in Octave-Spanning Si3N4 Microcomb

Tuning of Carrier Envelope Offset Frequency in Octave-Spanni...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Chin, Hsiao Hsuan Melton, Tristan Aldhafeeri, Alwaleed Rukh, Lala Colación, Gabriel M. Chen, Yujie Cheng, Xiang Chang, Kai-Chi Drake, Tara E. Wong, Chee Wei Mesoscopic Optics and Quantum Electronics Laboratory University of California Los AngelesCA90095 United States Optical Science & Engineering Program Center for High Technology Materials University of New Mexico 1313 Goddard SE AlbuquerqueNM87106 United States Dept. of Physics and Astronomy University of New Mexico AlbuquerqueNM87106 United States

We demonstrate the tuning of carrier envelope offset frequency in chip-scale micro-resonator and the effects on the spectrum, providing a pathway to f-2f stabilization. CLEO 2024 © Optica Publishing Group 2024 &#... 详细信息

ISBN: (纸本)9781957171395

关键词： Laser tuning

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Tuning of Carrier Envelope Offset Frequency in Octave-Spanning Si3N4 Microcomb

Tuning of Carrier Envelope Offset Frequency in Octave-Spanni...

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CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

We demonstrate the tuning of carrier envelope offset frequency in chip-scale micro-resonator and the effects on the spectrum, providing a pathway to f-2f stabilization. © Optica Publishing Group 2024

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Preparation of LFP-based cathode materials for lithium-ion battery applications

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materials Today: Proceedings 2022年 65卷 2347-2350页

作者： Suttison, Suchanat Pengpat, Kamonpan Intatha, Uraiwan Fan, Jinchen Zhang, Wei Eitssayeam, Sukum Master's Degree Program in Materials Science Faculty of Science Chiang Mai University Chiang Mai 50200 Thailand Graduate School Chiang Mai University Chiang Mai Thailand Department of Physics and Materials Science Faculty of Science Chiang Mai University Thailand Center of Innovative Materials for Sustainability School of Science Mae Fah Luang University Chiang Rai 57100 Thailand School of Materials and Chemistry University of Shanghai for Science and Technology Shanghai 200093 China Department of Engineering Mechanics Dalian University of Technology Dalian 116024 China

Lithium-ion batteries (LIB) have developed into the mainstream power source of energy storage devices due to their advantages: high power density, high power, long service life, and less pollution. This materials development for LFP batteries was considered successful in synthesizing powder. Here we show that three synthesis conditions were performed. LFP doped NiO, NMC, and (NH4)2HPO4 were synthesized by the nitrogen gas flow method. LFP-doped NiO was burned at 600 °C and 700 °C for five h. NMC doped with LFP burned at 550 °C for five h, and NMC-doped LFP and (NH4)2HPO4 were burned at 550 °C and 600 °C for five h. The structure and morphology of the material were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). © 2022

关键词： Lithium-ion batteries

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Challenges of measuring spin Seebeck noise

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Physical Review B 2024年第10期109卷 104429-104429页

作者： Renjie Luo Xuanhan Zhao Tanner J. Legvold Liyang Chen Changjiang Liu Deshun Hong Anand Bhattacharya Douglas Natelson Department of Physics and Astronomy Rice University Houston Texas 77005 USA Applied Physics Program Smalley-Curl Institute Rice University Houston Texas 77005 USA Materials Science Division Argonne National Laboratory Lemont Illinois 60439 USA Department of Electrical and Computer Engineering Rice University Houston Texas 77005 USA Department of Materials Science and NanoEngineering Rice University Houston Texas 77005 USA

Just as electronic shot noise in driven conductors results from the granularity of charge and the statistical variation in the arrival times of charge carriers, there are predictions for fundamental noise in magnon currents due to angular momentum being carried by discrete excitations. The inverse spin Hall effect as a transduction mechanism to convert spin current into charge current raises the prospect of experimental investigations of such magnon shot noise. Spin Seebeck effect measurements have demonstrated the electrical detection of thermally driven magnon currents and have been suggested as an avenue for accessing spin current fluctuations. Using spin Seebeck structures made from yttrium iron garnet on gadolinium gallium garnet, we demonstrate the technical challenges inherent in such noise measurements. While there is a small increase in voltage noise in the inverse spin Hall detector at low temperatures associated with adding a magnetic field, the dependence on field orientation implies that this is not due to magnon shot noise. We describe theoretical predictions for the expected magnitude of magnon shot noise, highlighting ambiguities that exist. Further, we show that magnon shot noise detection through the standard inverse spin Hall approach is likely impossible due to geometric factors. Implications for future attempts to measure magnon shot noise are discussed.

关键词： Spin Seebeck effect Spin current Magnetic insulators Noise measurements

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Polarization and orientation dependent optical properties in Czochralski-grown transition metal doped β-Ga2O3 14

Polarization and orientation dependent optical properties in...

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Oxide-based materials and Devices XIV 2023

作者： Dutton, Benjamin L. Remple, Cassandra Jesenovec, Jani Ghandiparsi, Soroush Gottlieb, Miranda S. Varley, Joel B. Voss, Lars F. McCluskey, Matthew D. McCloy, John S. Institute of Materials Research Washington State University PullmanWA99164-2711 United States Materials Science & Engineering Program Washington State University PullmanWA99164-2711 United States Dept. of Physics and Astronomy Washington State University PullmanWA99164-2814 United States Lawrence Livermore National Laboratory LivermoreCA94551-0808 United States

ISBN: (纸本)9781510659490

Properties of monoclinic β-Ga2O3 are strongly dependent upon orientation. In the case of optical properties, polarization can reveal differences in optical bandgap and absorptions related to transition metal ions. This phenomenon is known as pleochroism and has been extensively studied in minerology. β-Ga2O3 bulk single crystals doped with Zn, Mn, Cr, or Cu were grown by the Czochralski and vertical gradient freeze methods. Ultraviolet-visible-near infrared spectroscopy and photoluminescence (PL) revealed polarization- and orientation-dependent optical absorptions in β-Ga2O3. Crystals were annealed in reducing and oxidizing environments in an attempt to alter the intensities of absorptions characteristic to the different transition metal oxidation states in a given ligand field. Visible pleochroism was strongest in (001) oriented Mn-doped samples as shown by polarized optical microscopy. All samples were electrically insulating, indicative of acceptor doping, aside from Cr-doped samples where Cr acts as a deep donor. © 2023 SPIE.

关键词： Polarization

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