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An Energy-Efficient Computing-in-Memory NN Processor With Set-Associate Blockwise Sparsity and Ping-Pong Weight Update

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IEEE Journal of Solid-State Circuits 2024年第5期59卷 1612-1627页

作者： Yue, Jinshan Liu, Yongpan Feng, Xiaoyu He, Yifan Wang, Jingyu Yuan, Zhe Zhan, Mingtao Liu, Jiaxin Su, Jian-Wei Chung, Yen-Lin Wu, Ping-Chun Hong, Li-Yang Chang, Meng-Fan Sun, Nan Dou, Chunmeng Li, Xueqing Liu, Ming Yang, Huazhong Tsinghua University Department of Electronic Engineering Beijing100084 China Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China National Tsing Hua University Department of Electrical Engineering Hsinchu314040 Taiwan Frontier Institute of Chip and System State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai200433 China

Computing-in-memory (CIM) chips have demonstrated the potential high energy efficiency for low-power neural network (NN) processors. Even with energy-efficient CIM macros, the existing system-level CIM chips still lack deep exploration on sparsity and large models, which prevents a higher system energy efficiency. This work presents a CIM NN processor with more sufficient support of sparsity and higher utilization rate. Three key innovations are proposed. First, a set-associate blockwise sparsity strategy is designed, which simultaneously saves execution time, power, and storage space. Second, a ping-pong weight update mechanism is proposed for a higher utilization rate, enabling simultaneous execution of CIM and write operations. Third, an efficient CIM macro is implemented with adaptive analog-digital converter (ADC) precision for better sparsity utilization and performance-accuracy trade-off. The 65-nm fabricated chip shows 9.5-TOPS/W system energy efficiency at 4-bit precision, with 6.25times actual improvement compared with a state-of-the-art CIM chip. Besides, this work supports high CIM execution accuracy on the ImageNet dataset. © 1966-2012 IEEE.

关键词： Neural networks

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Polarization-induced photocurrent switching effect in heterojunction photodiodes

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Nano Research 2023年第4期16卷 5503-5510页

作者： Dingbo Chen Yu-Chang Chen Guang Zeng Yu-Chun Li Xiao-Xi Li Dong Li Chao Shen Nan Chi Boon S.Ooi David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Key Laboratory for Information Science of Electromagnetic Waves Department of Communication Science and EngineeringFudan UniversityShanghai 200433China Photonics Laboratory Division of ComputerElectricaland Mathematical Sciences and EngineeringKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Kingdom of Saudi Arabia

The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in *** photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic ***,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric *** introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V *** particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 *** device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,*** particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.

关键词： GaN heterostructure ultraviolet(UV)photodiodes bipolar photocurrent optical logic device

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Simulation and Optimization of In-Situ Integration Ultraviolet HEMT-LED Enabled by P-GaN Selective Epitaxy Growth

Simulation and Optimization of In-Situ Integration Ultraviol...

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SID International Symposium Digest of Technical Papers, 2023

作者： Zhang, Jingyang Huang, Wei Liu, Zhaojun Department of Electronic and Electrical Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai200433 China

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Gallium nitride

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Design and Simulation of Integrated Ultraviolet HEMT-LED enabled by P-GaN Selective Epitaxy Growth

Design and Simulation of Integrated Ultraviolet HEMT-LED ena...

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The 2023 International Conference on Display Technology, (ICDT 2023)

作者： Zhang, Jingyang Huang, Wei Liu, Zhaojun Department of electronic and electrical engineering Southern University of Science and Technology Guangdong Shenzhen518055 China A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P- GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Gallium nitride

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P-10.2: Design and Simulation of Integrated Ultraviolet HEMT-LED enabled by P-GaN Selective Epitaxy Growth

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SID Symposium Digest of Technical Papers 2023年第S1期54卷 789-791页

作者： Jingyang Zhang Wei Huang Zhaojun Liu Department of electronic and electrical engineering Southern University of Science and Technology Shenzhen Guangdong China 518055 A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai China 200433

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Biofunctionalization-Optimized MoS2-Based Fet Biosensors for the Detection of Tau Protein

SSRN

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SSRN 2024年

作者： Wen, Xiaohong Zhao, Xuefeng Shan, Xinzhi Lu, Hongliang Gao, Xiumin Zhuang, Songlin Engineering Research Center of Optical Instrument and System Ministry of Education Shanghai Key Lab of Modern Optical System School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology 516 Jungong Road Shanghai200093 China State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China State Key Laboratory of ASIC System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Field effect transistor (FET)-based biosensors can accurately quantify changes in weak signals and show excellent performance advantages in the detection of trace biological disease markers. Biological functionalization (biofunctionalization) is an important factor in the fabrication of FET-based biosensors, which directly affects the performance of the biosensor. However, little attention from researchers has been paid to biofunctionalization, which results in uneven performance of biosensors. Herein, MoS2-based FET biosensors are designed and fabricated using four different biofunctionalization methods. The most suitable biofunctionalization method is obtained by comparing the sensing performances of different functionalized MoS2based FET biosensors. Moreover, the working mechanism of the optimized biofunctionalization method is explored. Besides, the biofunctionalization-optimized MoS2-based FET biosensor exhibits excellent sensing performance, achieving sensitive detection of Tau protein in the concentration range of 10-2~103 pg/mL. This study provides a universal and effective strategy for the biofunctionalization optimization of two-dimensional materials-based FET biosensors. © 2024, The Authors. All rights reserved.

关键词： Molybdenum compounds

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Biofunctionalization-Optimized Mos2-Based Fet Biosensors for the Detection of Tau Protein

SSRN

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SSRN 2024年

Field effect transistor (FET)-based biosensors can accurately quantify changes in weak signals and show excellent performance advantages in the detection of trace biological disease markers. Biological functionalization (biofunctionalization) is an important factor in the fabrication of FET-based biosensors, which directly affects the performance of the biosensor. However, little attention from researchers has been paid to biofunctionalization, which results in uneven performance of biosensors. Herein, MoS2-based FET biosensors are designed and fabricated using four different biofunctionalization methods. The most suitable biofunctionalization method is obtained by comparing the sensing performances of different functionalized MoS2-based FET biosensors. Moreover, the working mechanism of the optimized biofunctionalization method is explored. Besides, the biofunctionalization-optimized MoS2-based FET biosensor exhibits excellent sensing performance, achieving sensitive detection of Tau protein in the concentration range of 10-2~103 pg/mL. This study provides a universal and effective strategy for the biofunctionalization optimization of two-dimensional materials-based FET biosensors. © 2024, The Authors. All rights reserved.

关键词： Molybdenum compounds

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EVDMARL: Efficient Value Decomposition-based Multi-Agent Reinforcement Learning with Domain-Randomization for Complex Analog Circuit Design Migration 24

EVDMARL: Efficient Value Decomposition-based Multi-Agent Rei...

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61st ACM/IEEE Design Automation Conference, DAC 2024

作者： Sun, Handa Bi, Zhaori Jiang, Wenning Lu, Ye Yan, Changhao Yang, Fan Hu, Wenchuang Wang, Sheng-Guo Zhou, Dian Zeng, Xuan State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai China School of Microelectronics Fudan University Shanghai China Frontier Institute of Chip and System Fudan University Shanghai China School of Information Science and Technology Fudan University Shanghai China Precision Medicine Center of West China Hospital Sichuan University Chengdu China Department of Et Department of Ece University of North Carolina at Charlotte Charlotte United States Department of Electrical Engineering University of Texas at Dallas RichardsonTX United States University of Texas Dallas United States

ISBN: (纸本)9798400706011

Automated analog circuit design migration significantly alleviates the burden on designers in circuit sizing under various operating conditions. Conventional methods model the migration problem as black-box optimization, requiring excessive iterations of costly simulations to converge. Reinforcement learning exhibits significant promise in transfer learning, as it enables the generation of circuits that fulfill specifications efficiently. The paper proposes a novel value decomposition-based multi-agent reinforcement learning framework, aiming to model complex analog circuits and eliminate the need for manually defined specifications of sub-circuits for new operating conditions. Additionally, it incorporates domain randomization techniques to efficiently generate circuits that meet unforeseen scenarios with minimal simulations. Experiment demonstrates that our algorithm can efficiently generate circuits meeting specifications under new operating conditions in few number of steps, outperforming state-of-the-art methods. © 2024 Copyright is held by the owner/author(s). Publication rights licensed to ACM.

关键词： Reinforcement learning

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Resistive Memory-based Neural Differential Equation Solver for Score-based Diffusion Model

arXiv

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arXiv 2024年

作者： Yang, Jichang Chen, Hegan Chen, Jia Wang, Songqi Wang, Shaocong Yu, Yifei Chen, Xi Wang, Bo Zhang, Xinyuan Cui, Binbin Li, Yi Lin, Ning Xu, Meng Li, Yi Xu, Xiaoxin Qi, Xiaojuan Wang, Zhongrui Zhang, Xumeng Shang, Dashan Wang, Han Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Institute of the Mind the University of Hong Kong Hong Kong University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong

Human brains image complicated scenes when reading a novel. Replicating this imagination is one of the ultimate goals of AI-Generated Content (AIGC). However, current AIGC methods, such as score-based diffusion, are still deficient in terms of rapidity and efficiency. This deficiency is rooted in the difference between the brain and digital computers. Digital computers have physically separated storage and processing units, resulting in frequent data transfers during iterative calculations, incurring large time and energy overheads. This issue is further intensified by the conversion of inherently continuous and analog generation dynamics, which can be formulated by neural differential equations, into discrete and digital operations. Inspired by the brain, we propose a time-continuous and analog in-memory neural differential equation solver for score-based diffusion, employing emerging resistive memory. The integration of storage and computation within resistive memory synapses surmount the von Neumann bottleneck, benefiting the generative speed and energy efficiency. The closed-loop feedback integrator is time-continuous, analog, and compact, physically implementing an infinite-depth neural network. Moreover, the software-hardware co-design is intrinsically robust to analog noise. We experimentally validate our solution with 180 nm resistive memory in-memory computing macros. Demonstrating equivalent generative quality to the software baseline, our system achieved remarkable enhancements in generative speed for both unconditional and conditional generation tasks, by factors of 64.8 and 156.5, respectively. Moreover, it accomplished reductions in energy consumption by factors of 5.2 and 4.1. Our approach heralds a new horizon for hardware solutions in edge computing for generative AI applications. © 2024, CC BY-NC-SA.

关键词： Diffusion

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Continuous-Time Digital Twin with Analogue Memristive Neural Ordinary Differential Equation Solver

arXiv

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arXiv 2024年

作者： Chen, Hegan Yang, Jichang Chen, Jia Wang, Songqi Wang, Shaocong Wang, Dingchen Tian, Xinyu Yu, Yifei Chen, Xi Lin, Yinan He, Yangu Wu, Xiaoshan Li, Yi Zhang, Xinyuan Lin, Ning Xu, Meng Li, Yi Zhang, Xumeng Wang, Zhongrui Wang, Han Shang, Dashan Liu, Qi Cheng, Kwang-Ting Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong ACCESS – AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong Institute of the Mind The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan430074 China State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200433 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Digital twins, the cornerstone of Industry 4.0, replicate real-world entities through computer models, revolutionising fields such as manufacturing management and industrial automation. Recent advances in machine learning provide data-driven methods for developing digital twins using discrete-time data and finite-depth models on digital computers. However, this approach fails to capture the underlying continuous dynamics and struggles with modelling complex system behaviour. Additionally, the architecture of digital computers, with separate storage and processing units, necessitates frequent data transfers and Analogue-Digital (A/D) conversion, thereby significantly increasing both time and energy costs. Here, we introduce a memristive neural ordinary differential equation (ODE) solver for digital twins, which is capable of capturing continuous-time dynamics and facilitates the modelling of complex systems using an infinite-depth model. By integrating storage and computation within analogue memristor arrays, we circumvent the von Neumann bottleneck, thus enhancing both speed and energy efficiency. We experimentally validate our approach by developing a digital twin of the HP memristor, which accurately extrapolates its nonlinear dynamics, achieving a 4.2-fold projected speedup and a 41.4-fold projected decrease in energy consumption compared to state-of-the-art digital hardware, while maintaining an acceptable error margin. Additionally, we demonstrate scalability through experimentally grounded simulations of Lorenz96 dynamics, exhibiting projected performance improvements of 12.6-fold in speed and 189.7-fold in energy efficiency relative to traditional digital approaches. By harnessing the capabilities of fully analogue computing, our breakthrough accelerates the development of digital twins, offering an efficient and rapid solution to meet the demands of Industry 4.0. © 2024, CC BY-NC-SA.

关键词： Energy utilization

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