The data analysis of blasting sites has always been the research goal of relevant *** rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field...
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The data analysis of blasting sites has always been the research goal of relevant *** rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field of *** Computing can provide a variety of computing services for people without hardware foundations and rich software development experience,which has aroused people’s interest in how to use it in the field ofmachine *** this paper,we design a distributedmachine learning training application based on the AWS Lambda *** on data parallelism,the data aggregation and training synchronization in Function as a Service(FaaS)are effectively *** also encrypts the data set,effectively reducing the risk of data *** rent a cloud server and a Lambda,and then we conduct experiments to evaluate our *** results indicate the effectiveness,rapidity,and economy of distributed training on FaaS.
Within the electronic design automation(EDA) domain, artificial intelligence(AI)-driven solutions have emerged as formidable tools, yet they typically augment rather than redefine existing methodologies. These solutio...
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Within the electronic design automation(EDA) domain, artificial intelligence(AI)-driven solutions have emerged as formidable tools, yet they typically augment rather than redefine existing methodologies. These solutions often repurpose deep learning models from other domains, such as vision, text, and graph analytics, applying them to circuit design without tailoring to the unique complexities of electronic circuits. Such an “AI4EDA” approach falls short of achieving a holistic design synthesis and understanding,overlooking the intricate interplay of electrical, logical, and physical facets of circuit data. This study argues for a paradigm shift from AI4EDA towards AI-rooted EDA from the ground up, integrating AI at the core of the design process. Pivotal to this vision is the development of a multimodal circuit representation learning technique, poised to provide a comprehensive understanding by harmonizing and extracting insights from varied data sources, such as functional specifications, register-transfer level(RTL) designs, circuit netlists,and physical layouts. We champion the creation of large circuit models(LCMs) that are inherently multimodal, crafted to decode and express the rich semantics and structures of circuit data, thus fostering more resilient, efficient, and inventive design methodologies. Embracing this AI-rooted philosophy, we foresee a trajectory that transcends the current innovation plateau in EDA, igniting a profound “shift-left” in electronic design methodology. The envisioned advancements herald not just an evolution of existing EDA tools but a revolution, giving rise to novel instruments of design-tools that promise to radically enhance design productivity and inaugurate a new epoch where the optimization of circuit performance, power, and area(PPA) is achieved not incrementally, but through leaps that redefine the benchmarks of electronic systems' capabilities.
The aim of this paper is to propose a new mathematical model able to compute the electro-thermal performance of a Gate All Around (GAA)-FET transistors. The given electrical formulation is given by the Drift-Diffusion...
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The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in *** photodiodes with photocurrent switching are emerging as ...
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The unipolar photocurrent in conventional photodiodes(PDs)based on photovoltaic effect limits the output modes and potential versatility of these devices in *** photodiodes with photocurrent switching are emerging as a promising solution for obtaining photoelectric devices with unique and attractive functions,such as optical logic ***,we design an all-solid-state chip-scale ultraviolet(UV)PD based on a hybrid GaN heterojunction with engineered bipolar polarized electric *** introducing the polarization-induced photocurrent switching effect,the photocurrent direction can be switched in response to the wavelength of incident light at 0 V *** particular,the photocurrent direction exhibits negative when the irradiation wavelength is less than 315 nm,but positive when the wavelength is longer than 315 *** device shows a responsivity of up to−6.7 mA/W at 300 nm and 5.3 mA/W at 340 nm,*** particular,three special logic gates in response to different dual UV light inputs are demonstrated via a single bipolar PD,which may be beneficial for future multifunctional UV photonic integrated devices and systems.
Since Moore’s law in the traditional semiconductor industry is facing shocks,More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry by adopting new architec...
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Since Moore’s law in the traditional semiconductor industry is facing shocks,More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry by adopting new architectures or new materials,in which the former is committed to the continued scaling of transistors for performance enhancement,and the latter pursues the realization of functional diversification of electronic ***-dimensional(2D)materials are supposed to play an important role in these two *** More Moore,the ultimate thin thickness and the dangling-bond-free surface of 2D channels offer excellent gate electrostatics while avoiding the degradation of carrier mobility at the same time,so that the transistors can be further scaled down for higher *** More than Moore,devices based on 2D materials can well meet the requirements of electronic systems for functional diversity,like that they can operate at high frequency,exhibit excellent sensitivity to the changes in the surroundings at room temperature,have good mechanical flexibility,and so *** this review,we present the application of 2D materials in More Moore and More than Moore domains of electronics,outlining their potential as a technological option for logic electronics,memory electronics,radio-frequency electronics,sensing electronics,and flexible electronics.
Before software developers actually start coding, an essential requirement is to be proficient in a programming language. However, as an important learning resource, programming language textbooks usually contain much...
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Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness *** va...
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Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness *** various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble *** review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection *** key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured *** addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also ***,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in ***,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.
The analysis of power dissipation and operating temperature is of great importance for electrothermal design in power electronics. In this communication, an electrothermal simulation analysis of AlGaN/GaN double metal...
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Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/*** this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesize...
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Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/*** this work,wafer-scale intrinsic n-type WS_(2)films and in situ Nb-doped p-type WS_(2)films were synthesized through atomic layer deposition(ALD)on 8-inchα-Al_(2)O_(3)/Si wafers,2-inch sapphire,and 1 cm^(2)GaN substrate *** Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by ***_(2)n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes.X-ray photoelectron spectroscopy,Raman spectroscopy,and Hall measurements confirmed the effective substitutional doping with *** on/off ratio and electron mobility of WS_(2)n-FET are as high as 105 and 6.85 cm^(2)V^(-1)s^(-1),*** WS_(2)p-FET with 15-cycle Nb doping,the on/off ratio and hole mobility are 10 and 0.016 cm^(2)V^(-1)s^(-1),*** p-n structure based on n-and p-type WS_(2)films was proved with a 10^(4)rectifying *** realization of controllable in situ Nb-doped WS_(2)films paved a way for fabricating wafer-scale complementary WS_(2)FETs.
The open array chip is an incredibly valuable tool for analyzing single molecule levels. Its efficiency, speed, compatibility, and precision make it an essential part of this process. However, efficient sample additio...
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