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3rd International Conference on Computation, Automation and Knowledge Management, ICCAKM 2022

作者： Prokopenko, Nikolay Gaiduk, Anatoly Chumakov, Vladislav Institute for Design Problems in Microelectronics of RAS Don State Technical University Zelenograd Rostov-on-Don Russia Southern Federal University Scientific Design Office Robotics and Control Systems Rostov-on-Don Taganrog Russia Don State Technical University Rostov-on-Don Russia

ISBN: (数字)9781665453196

ISBN: (纸本)9781665453196

Modern control systems must be synthesized taking into account the nonlinear characteristics of real control objects to ensure the required quality and accuracy. Many methods for synthesizing nonlinear control systems are currently known. However, the practical application of most of them is difficult, since the initial equations of the nonlinear object must be converted to the special forms. This article considers an analytical method for synthesizing nonlinear control systems for nonlinear objects with differentiable nonlinearities. The control system is synthesized using a quasi-linear model (QLM form). This model is created on the basis of equations in the Cauchy form of the non-linear object. For this purpose, the partial derivatives of nonlinearities are found with respect to their arguments. Then they are integrated over an additional variable. The controller parameters are determined by solving a system of algebraic equations. The state variables of the non-linear object are assumed to be measurable. The integrated state controller provides zero error caused by the constant action, and the transient time is not more than the specified one. The value of the system error is equal to zero on change in the parameters of the system, as long as it is stable. The method can be used to create control systems of many industries with non-linear objects: Aircraft engineering, shipbuilding, automotive industry, agriculture and many others. © 2022 IEEE.

关键词： Automotive industry

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An AuNPs/Mesoporous NiO/Nickel Foam Nanocomposite as a Miniaturized Electrode for Heavy Metal Detection in Groundwater

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Engineering 2023年第8期27卷 199-208页

作者： Boyuan Xue Qian Yang Kaidong Xia Zhihong Li George Y.Chen Dayi Zhang Xiaohong Zhou State Key Joint Laboratory of Environment Simulation and Pollution Control School of EnvironmentTsinghua UniversityBeijing 100084China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking UniversityBeijing 100871China Shenzhen Key Laboratory of Photonic Devices and Sensing Systems for Internet of Things Guangdong and Hong Kong Joint Research Centre for Optical Fiber SensorsShenzhen UniversityShenzhen 518060China College of New Energy and Environment Jilin UniversityChangchun 130021China The Research Institute of Environmental Innovation(Suzhou) Tsinghua UniversitySuzhou 215000China

Heavy metals,notably Pb2+and Cu^(2+),are some of the most persistent contaminants found in *** monitoring of these metals,which relies on efficient,sensitive,cost-effective,and reliable methods,is a *** present a nanocomposite-based miniaturized electrode for the concurrent measurement of Pb2+and Cu^(2+)by exploiting the electroanalytical technique of square wave *** also propose a facile in situ hydrothermal calcination method to directly grow binder-free mesoporous Ni O on a three-dimensional nickel foam,which is then electrochemically seeded with gold nanoparticles(Au NPs).The meticulous design of a low-barrier Ohmic contact between mesoporous Ni O and Au NPs facilitates target-mediated nanochannel-confined electron transfer within mesoporous Ni *** a result,the heavy metals Pb2+(0.020 mg.L^(-1)detection limit;2.0–16.0 mg.L^(-1)detection range)and Cu^(2+)(0.013 mg.L^(-1)detection limit;0.4–12.8 mg.L^(-1)detection range)can be detected simultaneously with high ***,other heavy metal ions and common interfering ions found in groundwater showed negligible impacts on the electrode’s performance,and the recovery rate of groundwater samples varied between 96.3%±2.1%and 109.4%±0.6%.The compactness,flexible shape,low power consumption,and ability to remotely operate our electrode pave the way for onsite detection of heavy metals in groundwater,thereby demonstrating the potential to revolutionize the field of environmental monitoring.

关键词： AuNPs Mesoporous NiO Miniaturized electrode Heavy metal ions Groundwater Square wave voltammetry

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Sallen-Key High-Pass Filter with Unrelated Tune of Generic Parameter 23

Sallen-Key High-Pass Filter with Unrelated Tune of Generic P...

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23rd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2022

作者： Denisenko, Darya Yu. Prokopenko, Nikolay N. Ivanov, Yuri I. Butyrlagin, Nikolay N. Don State Technical University Department of Scientific Research Rostov-on-Don Russia Southern Federal University Department of Automatic Control Systems Rostov-on-Don Russia Department of Information Systems and Radio Engineering Don State Technical University Zelenograd Rostov-on-Don Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd Rostov-on-Don Russia

ISBN: (纸本)9781665498043

New second order high-pass filter of the Sallen-Key family circuit is considered, where there is unrelated tune of generic parameters by a digitally controlled resistor - the pole frequency, Q-factor pole and the scale transfer coefficient. The basic mathematical expressions of transfer function for proposed high-pass filter are obtained. A comparison of the parameters of the known and new schemes is given. A Sallen-Key high-pass filter circuit based on a high-frequency emitter follower has been developed. The results of high-pass filter modeling in the Micro-Cap 12 environment using the OP37 operational amplifier and an ideal buffer amplifier are presented. Computer simulation has shown that the pole frequency is adjusted by resistor R5. Adjusting the pole attenuation is possible by changing the resistor R3, while the pole attenuation frequency unchanged, an increase in R3 leads to an increase of the pole attenuation. © 2022 IEEE.

关键词： Operational amplifiers

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Deep Learning-Based LecturePosture Evaluation

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Wuhan University Journal of Natural Sciences 2024年第4期29卷 315-322页

作者： YANG Yifan ZHANG Tao LI Weiyu Key Laboratory of Multidisciplinary Management and Control of Complex Systems of Anhui Higher Education Institutes Anhui University of TechnologyMaanshan 243002AnhuiChina School of Microelectronics and Data Science Anhui University of TechnologyMaanshan 243032AnhuiChina

Computer vision,a scientific discipline enables machines to perceive visual information,aims to supplant human eyes in tasksencompassing object recognition,localization,and *** traditional educational settings,instructors or evaluators evaluate teachingperformance based on subjective ***,with the continuous advancements in computer vision technology,it becomes increasinglycrucial for computers to take on the role of judges in obtaining vital information and making unbiased *** thisbackdrop,this paper proposes a deep learning-based approach for evaluating lecture ***,feature information is extracted fromvarious dimensions,including head position,hand gestures,and body posture,using a human pose estimation ***,a machinelearning-based regression model is employed to predict machine scores by comparing the extracted features with expert-assigned *** correlation between machine scores and human scores is investigated through experiment and analysis,revealing a robustoverall correlation(0.6420)between predicted machine scores and human *** ideal scoring conditions(100 points),approximately51.72%of predicted machine scores exhibited deviations within a range of 10 points,while around 81.87%displayed deviationswithin a range of 20 points;only a minimal percentage of 0.12%demonstrated deviations exceeding the threshold of 50 ***,tofurther optimize performance,additional features related to bodily movements are extracted by introducing facial expression recognitionand gesture recognition *** fusion of multiple models resulted in an overall average correlation improvement of 0.0226.

关键词： deep learning human pose estimation object detection correlation

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Aluminum Nitride Ring Resonator-Coupled Spin Defects in Hexagonal Boron Nitride for Integrated Quantum Photonics

Aluminum Nitride Ring Resonator-Coupled Spin Defects in Hexa...

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CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

作者： Roberts, Henry C. Waseem, Aadil Wicker, Scott A. Abudayyeh, Hamza Kim, Dong Seob Liu, Zhida Randolph, Steven Li, Xiaoqin Li, Xiuling Department of Electrical and Computer Engineering Microelectronics Research Center The University of Texas at Austin 10100 Harry Ransom Trail AustinTX78758 United States Department of Physics Center for Complex Quantum Systems Center for Dynamics Control of Materials Texas Materials Institute The University of Texas at Austin 2515 Speedway AustinTX78712 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37830 United States

We report a new approach to generate waveguide-coupled emission from deterministically implanted boron vacancy spin defects in hBN using single-crystal AlN-on-sapphire ring resonators. This facilitates the eventual development of hBN-based integrated quantum technologies. © Optica Publishing Group 2024

关键词： Single crystals

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Aluminum Nitride Ring Resonator-Coupled Spin Defects in Hexagonal Boron Nitride for Integrated Quantum Photonics

Aluminum Nitride Ring Resonator-Coupled Spin Defects in Hexa...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Roberts, Henry C. Waseem, Aadil Wicker, Scott A. Abudayyeh, Hamza Kim, Dong Seob Liu, Zhida Randolph, Steven Li, Xiaoqin Li, Xiuling Department of Electrical and Computer Engineering Microelectronics Research Center The University of Texas at Austin 10100 Harry Ransom Trail AustinTX78758 United States Department of Physics Center for Complex Quantum Systems Center for Dynamics and Control of Materials Texas Materials Institute The University of Texas at Austin 2515 Speedway AustinTX78712 United States Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak RidgeTN37830 United States

ISBN: (纸本)9781957171395

关键词： Aluminum nitride

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The Circuit Technique for Reducing the Zero Level of the JFET Op-Amp on the Push-Pull Folded-Cascode

The Circuit Technique for Reducing the Zero Level of the JFE...

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2022 IEEE International Multi-Conference on Engineering, Computer and Information Sciences, SIBIRCON 2022

作者： Prokopenko, Nikolay Titov, Alexey Chumakov, Vladislav Bugakova, Anna Dept. of Scientific Research Don State Technical University Institute for Design Problems in Microelectronics of the RAS Zelenograd Rostov-on-Don Russia Southern Federal University Dept. of Automatic Control Systems Rostov-on-Don Russia Don State Technical University Dept. of Scientific Research Rostov-on-Don Russia

ISBN: (纸本)9781665464802

In the paper, the authors describe the improved operational amplifier architecture (op-amp). Complementary FETs with the p-n-junction control were used in the design of this op-amp, depletion-mode complementary MOS can also be used. The character of the suggested op-amp is to create conditions that contribute to obtaining low systematical constituent offset voltage (Voff), which significantly depends on the change in the drain-gate specifications of transistors when the static voltages on their drains change. It should be noted that the high symmetric of the static regimen of the input transistors and output transistors of the folded-cascode of the suggested op-amp is supplied to reduce this constituent Voff in the considered op-amp circuit. Computer modelling of the op-amp carried out in the LTSpice was fulfilled in the large range of temperatures (from-197°C to 27°C). The suggested circuit design minimizes the systematical constituent Voff (below 30 µV) and increases the open-loop gain of op-amp to 60 dB. The JFET op-amp circuitry suggested in the paper is advised to analog-to-digital and analog interfaces, incl. those operating at exposure to radiation and low temperatures. © 2022 IEEE.

关键词： Operational amplifiers

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Current-Induced Magnetic Switching in an L1_(0) FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

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Engineering 2022年第5期8卷 55-61页

作者： Kaifeng Dong Chao Sun Laizhe Zhu Yiyi Jiao Ying Tao Xin Hu Ruofan Li Shuai Zhang Zhe Guo Shijiang Luo Xiaofei Yang Shaoping Li Long You School of Automation China University of GeosciencesWuhan 430074China Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems China University of GeosciencesWuhan 430074China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China China Resources Microelectronics Limited Shanghai 200072China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen 518000China Wuhan National High Magnetic Field Center Huazhong University of Science and TechnologyWuhan 430074China

In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past *** SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the ***,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous *** SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the *** findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.

关键词： L1_(0)FePt SOT Inversion asymmetry Magnetic switching Perpendicular anisotropy

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A Novel Monolithic Integration of Light-Emitting HEMT with InGaN Quantum Well Insertion Performing as Optoelectronic Devices

A Novel Monolithic Integration of Light-Emitting HEMT with I...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Jijun Zhu Hanlin Yang Haoyu Wang Yangyang Hu Luqiao Yin Jianhua Zhang Kailin Ren School of Microelectronics Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Shanghai Aerospace Control Technology Institute Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Visible light communication (VLC) technology based on GaN light emitting diode (LED) has been widely studied because of its wide bandwidth and high reliability. However, low integration is one of the main factors limiting the development of VLC technology at present. This study reports a novel GaN-based light emitting diode-high electron mobility transistor (LED-HEMT) monolithically integrated device. The light efficiency is improved not only by adding InGaN quantum well layer at the AlGaN/GaN interface, but also thin Ni/Au layer is used as a substitute for the traditional indium tin oxide (ITO) layer to realize the current expansion function, so that the device has faster switching speed and reliable light modulation ability. The influence of gate-source voltage (V GS ) and applied drain voltage (V DD ) on the control capability of LED-HEMT was studied. The integrated LED-HEMT exhibited output current can reach 309 mA/mm when the HEMT was modulated with V DD = 14 V and V GS = 2 V, which driving capability is better to previous Si-based MOSFETs, demonstrating good output performance. The peak of the emission spectrum is at 445 nm when I Ds = 15 mA. This work offers a novel approach to the monolithic integration of LED-HEMT and provides reference for the application of Micro-LED in the fields of visible light communication and optoelectronic detection.

关键词： Performance evaluation Optical switches Indium tin oxide Monolithic integrated circuits HEMTs Light emitting diodes Wide band gap semiconductors Transistors Voltage control Visible light communication

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Geometric Parameterized Macromodel of Uniaxial Capacitance Accelerometer Based on Modal Superposition

Geometric Parameterized Macromodel of Uniaxial Capacitance A...

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International Conference on Actual Problems of Electronic Instrument Engineering (APEIE)

作者： Aleksandr V. Gridchin Aleksei N. Koleda Evgenii S. Barbin Tamara G. Nesterenko Vladimir A. Kolchuzhin Department of Semiconductor Devices and Microelectronics Novosibirsk State Technical University Novosibirsk Russia Department of Electronic Engineering National Research Tomsk Polytechnic University Tomsk Russia Laboratory of Intelligent Computer Systems Tomsk State University of Control Systems and Radioelectronics Tomsk Russia Advanced Cellular Group Qorvo Munich GmbH Munich Germany

The paper presents a piecewise geometric parameterization method and a parametric analysis of uniaxial capacitance accelerometer using a reduced model formulated on the modal superposition method. The extraction of parameters for the macromodel such as modal frequencies, modal masses, modal stiffnesses, strain energy, and capacitances are described. The reduced model consists of the two modes: torsion mode, and transversal mode, three electrodes in the electrostatic domain, and eight master nodes in the geometrical domain located at the edges of the plate. The generation of the discrete macromodels is executed using commercial software. The thickness of the plate has been selected as a design parameter. Linear piecewise interpolation is used for macromodel parameterization which have been done inside VHDL-AMS code. The accelerometer’s dynamic response simulated using of parametrized macromodel considering the mechanical contact phenomena and the nonlinear electrostatic interaction are presented and discussed. The developed approach can be applied for fast system level simulations in view of the variation of the geometric parameters.

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