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Investigation of MgO Seed Layer Crystallinity and Morphology-Dependent Characteristics of NO2 Gas Sensors Using In2O3 Nanorods Grown by Hydrothermal Synthesis Method

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IEEE Sensors Journal 2025年第11期25卷 18777-18784页

作者： Liu, Bo-Yi Wu, Mu-Ju Chang, Ting-Chun Lee, Ching-Ting Lee, Hsin-Ying National Cheng Kung University Department of Photonics Tainan701 Taiwan National Cheng Kung University Program on Key Materials Academy of Innovative Semiconductor and Sustainable Manufacturing Tainan701 Taiwan National Cheng Kung University Department of Photonics and the Institute of Microelectronics Department of Electrical Engineering Tainan701 Taiwan Yuan Ze University Department of Electrical Engineering Taoyuan320 Taiwan National Cheng Kung University Department of Photonics and the Program on Key Materials Academy of Innovative Semiconductor and Sustainable Manufacturing Tainan701 Taiwan

This study investigated the effects and influences of MgO seed layer and morphology on the characteristics of NO2 gas sensors fabricated using the In2O3 nanorod sensing membranes grown by the hydrothermal synthesis method. The morphologies of In(OH)3 nanorods were modified using different MgO seed layers and different precursor solutions of indium chloric tetrahydrate and urea. The In(OH)3 nanorods were converted into In2O3 nanorods in a hydrogen ambience at 300 oC for 10 min. Using the hydrothermal synthesis method with indium chloric tetrahydrate of 65 mM and urea of 1.42 M, the optimal response of the NO2 gas sensors was 219.1 by using the In(OH)3 nanorods grown on 100-nm-thick MgO seed layers sputtered with RF power of 100 W and annealed in oxygen ambience at 500 oC for 2 hours. The response time and recovery time of the resulting NO2 gas sensors were 42 sec and 82 sec, respectively. © 2001-2012 IEEE.

关键词： Nanorods

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Two-dimensional Epitaxial Growth of Strained InGaAs on GaAs (001)

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MRS Online Proceedings Library 2021年第1期737卷 403-408页

作者： Hong Wen Zhiming Wang G.J. Salamo MRSEC and Microelectronics-Photonics Program University of Arkansas Fayetteville USA

Molecular beam epitaxy growth of lattice mismatched In0.53Ga0.47As / GaAs(100) system is studied by in situ scanning tunneling microscope (STM) and reflection high energy electron diffraction. InGaAs layers with a thickness ranging up to 250 nm do not exhibit a smooth surface when grown under In-rich conditions. RHEED and STM confirm the well-ordered (4×2) reconstruction and mono-layer steps associated with this unique planar growth mode. Large STM scans reveal a characteristic morphology of rectangular shaped islands distributed on large flat terraces which are typically more than 300 nm width but only mono-layer steps.

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Surface Characterization of Sodium Cholate Treated CVD Graphene

Surface Characterization of Sodium Cholate Treated CVD Graph...

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IEEE Conference on Nanotechnology

作者： Evans Addo-Mensah Janet Obaemo Katie Welch Yang Tian Shiva Dolatabadi Hugh Churchill Uchechukwu Wejinya Materials Science and Engineering Graduate Program University of Arkansas Microelectronics and Photonics Program University of Arkansas Department of Physics University of Arkansas Fayetteville Arkansas Department of Mechanical Engineering University of Arkansas Fayetteville Arkansas

The advancement of graphene has created a need in exploring its properties for different applications. One way to explore its properties is by reducing its hydrophobicity. To overcome hydrophobicity of graphene, surfactants have been used in functionalization, hence improving the surface properties of the graphene monolayer. Therefore, investigating surfactant treatment for CVD graphene becomes useful in understanding the surface property effects on graphene. This study utilizes CVD graphene on silicon substrates. Its treatment was done with varying concentrations of Sodium Cholate (SC) for different treatment times. These samples were then characterized using Atomic Force Microscopy (AFM) to investigate the surface properties of the samples before and after treatment. To be optimized, the graphene must remain attached to the silicon substrate. The result shows that the integrity of the graphene, which is basically the Sp2 structure, is preserved as there was no delamination from the substrate even after treatment for as long as 2 hours in 1% weight/volume concentration of the SC solution.

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Coherent Acoustic Phonons in Bi2Se3 Ultrathin Films Probed by Femtosecond, Optical Pump-Probe Spectroscopy

Coherent Acoustic Phonons in Bi2Se3 Ultrathin Films Probed b...

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CLEO: Fundamental Science, CLEO:FS 2024 - Part of Conference on Lasers and Electro-Optics, CLEO 2024

作者： Cheng, Jing Niherysh, Kiryl A. Francis, Peter Chakraborty, Debamitra Lombardi, Floriana Erts, Donats Prischepa, Serghej L. Laszcz, Adam Komissarov, Ivan V. Sobolewski, Roman Materials Science Graduate Program University of Rochester RochesterNY14627 United States Laboratory for Laser Energetics University of Rochester RochesterNY14623-1299 United States Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden Institute of Chemical Physics University of Latvia Riga Latvia Department of Electrical and Computer Engineering University of Rochester RochesterNY14627 United States Dipartimento di Fisica "E.R. Caianiello" Università degli Studi di Salerno Sa FiscianoI-84084 Italy Lukasiewicz Research Network Institute of Microelectronics and Photonics WarszawaPL-02668 Poland

ISBN: (纸本)9781957171395

The dynamics of coherent acoustic phonons in the Bi2Se3 layered crystal system are investigated. The findings reveal that the frequency evolution of breathing modes with the number of the material quintuple layers and the dispersion relation both can be explained by a modified chain model with a nonuniform coupling force. © Optica Publishing Group 2024, © 2024 The Author(s)

关键词： Ultrathin films

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Generation and transmission of optical vortex beam in all-fiber optical system

Generation and transmission of optical vortex beam in all-fi...

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Specialty Optical Fibers, SOF 2022

作者： Nguyen, Hue Thi Stepniewski, Grzegorz Filipkowski, Adam Kasztelanic, Rafal Pysz, Dariusz Van Le, Hieu Stepien, Ryszard Klimczak, Mariusz Krolikowski, Wieslaw Buczynski, Ryszard Faculty of Physics University of Warsaw Pasteura 5 Warsaw02-093 Poland Department of Glass Lukasiewicz Research Network - Institute of Microelectronics and Photonics al. Lotnikow 32/46 Warsaw02-668 Poland Faculty of Natural Sciences Hong Duc University Quang Trung Thanhhoa565 Viet Nam Science Program Texas A&M University at Qatar Doha Qatar Laser Physics Centre Research School of Physics Australian National University CanberraACT0200 Australia

ISBN: (纸本)9781557528209

We present an experimental study on generation and transmission of optical vortex in an all-fiber system consisting of an antiresonant fiber butt-coupled with a dedicated fiber-based vortex generator. The influence of external perturbations like fiber bend, axial stress on structural stability of the transmitted vortex in the antiresonant fiber is also reported. © Optica Publishing Group 2022 © 2022 The Author(s)

关键词： Stability

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Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K

arXiv

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arXiv 2024年

作者： Zhou, Jie Vincent, Daniel Acharya, Sudip Ojo, Solomon Abrand, Alireza Liu, Yang Gong, Jiarui Liu, Dong Haessly, Samuel Shen, Jianping Xu, Shining Li, Yiran Lu, Yi Stanchu, Hryhorii Mawst, Luke Claflin, Bruce Mohseni, Parsian K. Ma, Zhenqiang Yu, Shui-Qing Department of Electrical and Computer Engineering University of Wisconsin - Madison Madison53706 United States Department of Electrical Engineering University of Arkansas FayettevilleAR72701 United States Microelectronics-Photonics Program University of Arkansas FayettevilleAR72701 United States Department of Electrical and Microelectronic Engineering Rochester Institute of Technology RochesterNY14623 United States Air Force Research Laboratory Wright-Patterson AFB OH45433 United States

Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been bottlenecked by limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers (EELs) with an AlGaAs nanomembrane (NM) transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers. Copyright © 2024, The Authors. All rights reserved.

关键词： Wafer bonding

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First-Principal Investigations of the Electronic, Magnetic, and Thermoelectric Properties of Crtirhal Quaternary Heusler Alloy

SSRN

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SSRN 2022年

作者： Hamad, Bothina Alsayegh, Shuruq Alqurashi, Hind Andharih, Eesha Microelectronics Photonics Program University of Arkansas FayettevilleAR72701 United States Physics Department The College of Science Al Baha University Al Bahah65527 Saudi Arabia Department of Physics University of Arkansas FayettevilleAR72701 United States Physics Department The University of Jordan Amman11942 Jordan

Density functional theory (DFT) calculations were performed to investigate the electronic, magnetic, and thermoelectric properties of CrTiRhAl quaternary Heusler alloy (QHA). The type-I atomic configuration was found to be the most stable structure of this alloy. The CrTiRhAl QHA was found to exhibit a semiconducting behavior with an indirect narrow gap of 0.129 eV at the majority spin channel, while the minority spin channel exhibits a metallic. The QHA has a total magnetic moment of 2 μB and 100% spin-polarization, making it ideal for potential spintronic applications. Applying the semi-classical Boltzmann theory, the Seebeck coefficient, electrical conductivity, and electronic thermal conductivity of CrTiRhAl alloy were calculated. However, the lattice thermal conductivity was computed using Slack’s equation. The calculations predicted a figure of merit (ZT) value of 1.11 at 800 K, which is interesting for high temperature thermoelectric applications. © 2022, The Authors. All rights reserved.

关键词： Density functional theory

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Effects of numbers of wells on optical properties of periodic InGaN graded structure

Effects of numbers of wells on optical properties of periodi...

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Low-Dimensional Materials and Devices 2021

作者： Sarollahi, Mirsaeid Allaparthi, Rohith Alhelais, Reem Aldawsari, Manal A. Refaei, Malak A. Maruf, Md Helal Uddin Ware, Morgan E. University of Arkansas Electrical Engineering Department 3217 Bell Engineering Center FayettevilleAR72701 United States University of Arkansas Microelectronics-Photonics Program 731 West Dickson Street FayettevilleAR72701 United States University of Arkansas Material Science and Engineering 731 West Dickson Street FayettevilleAR72701 United States Institute for Nanoscience and Engineering FayettevilleAR72701 United States

ISBN: (数字)9781510644397

ISBN: (纸本)9781510644380

The optical properties of periodic graded GaN/InGaN are studied. We have designed graded InGaN quantum well (QW) structures with the indium composition increasing then decreasing in a zigzag pattern. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the number of repeating periods (1 to 3), while maintaining constant overall structure thicknesses. Calculation of the transition probabilities and the electron and hole wave-functions between the conduction band and the valence band reveals a complex energy structure which predicts the photoluminescence peaks for band to band transitions. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Optical properties

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Strain-induced resonances in the dynamical quadratic magnetoelectric response of multiferroics

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npj Computational Materials 2020年第1期6卷 1156-1161页

作者： S.Omid Sayedaghaee Charles Paillard Sergey Prosandeev Bin Xu Laurent Bellaiche Physics Department and Institute for Nanoscience and Engineering University of ArkansasFayettevilleArkansas 72701USA Microelectronics-Photonics Program University of ArkansasFayettevilleArkansas 72701USA Laboratoire Structures Propriétés et Modélisation des SolidesCentraleSupélecCNRS UMR 8580UniversitéParis-Saclay91190 Gifsur-YvetteFrance Institute of Physics and Physics Department of Southern Federal University Rostov-na-Donu 344090Russia School of Physical Science and Technology Soochow UniversitySuzhouJiangsu 215006China

For the last few years,the research interest in magnetoelectric(ME)effect,which is the cross-coupling between ferroelectric and magnetic ordering in multiferroic materials,has experienced a significant *** extensive recent studies are not only conducted towards the design of sensors,actuators,transducers,and memory devices by taking advantage of the cross-control of polarization(or magnetization)by magnetic(or electric)fields,but also aim to create a clearer picture in understanding the sources of ME responses and the novel effects associated with *** we derive analytical models allowing to understand the striking and novel dynamics of ME effects in multiferroics and further confirm it with atomistic ***,the role of strain is revealed to lead to the existence of electroacoustic magnons,a new quasiparticle that mixes acoustic and optical phonons with magnons,which results in resonances and thus a dramatic enhancement of magnetoelectric ***,a unique aspect of the dynamical quadratic ME response under a magnetic field with varying frequencies,which is the second harmonic generation(SHG),has not been discussed prior to the present *** SHGs put emphasis on the fact that nonlinearities should be considered while dealing with such systems.

关键词： quadratic dynamical resonance

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Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features

arXiv

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arXiv 2022年

作者： Sarollahi, Mirsaeid Alavijeh, Mohammad Zamani Aldawsari, Manal A. Allaparthi, Rohith Alhelais, Reem Refaei, Malak A. Maruf, Md. Helal Uddin Ware, Morgan E. University of Arkansas Electrical Engineering Department 3217 Bell Engineering Center FayettevilleAR72701 United States University of Arkansas Microelectronics-Photonics Program 731 West Dickson Street FayettevilleAR72701 United States University of Arkansas Material Science and Engineering 731 West Dickson Street FayettevilleAR72701 United States Institute for Nanoscience and Engineering FayettevilleAR72701 United States University of Arkansas Physics Department FayettevilleAR72701 United States

The optical properties of Λ graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a Λ shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 80%, while maintaining a constant overall structure thicknesses of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of ≅ 5.5%, under fully strained condition occurs at x=60%. Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% at 90%. While Vegard’s law predicts the bandgap under relaxed conditions, a Vegard-like law is empirically determined from the output of Nextnano for varying In compositions in order to calculate solar cell parameters under strain. © 2022, CC BY.

关键词： Solar cells

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