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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Weera Pengchan Toempong Phetchakul Amporn Poyai Department of Electronics Faculty of Engineering King Mongkut''s Institute of Technology Ladkrabang Bangkok Thailand Thai Microelectronics Center National Electronics and Computer Technology Center Chachoengsao Thailand

Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p + -n-well more than in n + -p-substrate. Finally, the possible nature of the defect will be discussed.

关键词： Capacitance Leakage current Current density P-n junctions Capacitance-voltage characteristics Substrates

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Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

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MRS Online Proceedings Library (OPL) 2011年第1期640卷 H5.14-H5.14页

作者： L. K. Bera W. K. Choi D. McNeill S. K. Ray S. Chatterjee C. K. Maiti Microelectronics Laboratory Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore 117576 Department of Electronics and Electrical Engineering The Queen's University of Belfast Belfast U.K. Department of Physics and Meteorology Indian Institute of Technology Kharagpur India. Department of Electronics and Electrical Communication Engineering Indian Institute of Technology Kharagpur India.

We have investigated the structural and electrical properties of as-prepared and rapid thermal oxynitride films on C+ implanted solid phase epitaxially grown SiC. The oxynitride was grown using N2O. The C concentration of the samples was estimated to be 1, 2 and 5 at. %. From the infrared spectra, samples with 1 and 2 at. % carbon showed that the carbon was substitutionally incorporated into the silicon. No precipitation of SiC was detected. However, for the 5 at. % C sample, some precipitation was observed as indicated by a broad peak at ∼800 cm−1. The oxynitride films showed the Si-O-Si stretching mode at ∼1100 cm−1. The shoulder at 980–1067 cm−1 was due to the O-Si-N bond. The peak at 830 cm−1 was due to the Si-N and Si-C bonds and C-O complex vibrational mode was observed at 663 cm−1. Electrical characterization of the oxynitride films was carried out using the MOS capacitor structure. The interface state density was found to range between 5.7×1011 to 3.35×1012 cm−2eV−1 and increased with an increase in the C concentration. The electrical breakdown field was found to be in the range of 5–7 MV cm−1 and reduced with an increase in C concentration. The charge-to-breakdown value was measured and decreased with an increase in C concentration.

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Design and Development of a Cost-Effective Online Electronic Circuits Laboratory

Design and Development of a Cost-Effective Online Electronic...

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International Workshop on Technology for Education, T4E

作者： C. K. Maiti S. Mahata Ananda Maiti Department of Electronics & ECE Indian Institute of Technology Kharagpur India School of Computer Science and Engineering Vellore of Institute of Technology Vellore Tamil Nadu India

In this paper, we present our work on the design and implementation of a cost-effective remote real time internet-based undergraduate electronic circuits laboratory. The student interacts with the system through a graphical user interface implemented using NI LabVIEW. On the back end, the server processes experiment requests from users and runs them. The proposed online internet-based set of experiments (sixteen experiments are currently available) using NI ELVIS II platform. The laboratory management system is also discussed.

关键词： Laboratories Education Internet Instruments Electronic circuits Performance evaluation Nickel

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Optimization of the perimeter doping of ultrashallow p+-n−-n+ photodiodes

Optimization of the perimeter doping of ultrashallow p+-n−-...

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Proceedings of the International Convention MIPRO

作者： T. Knežević T. Suligoj A. Šakic L. K. Nanver Department of Electronics Microelectronics Computer and Intelligent Systems Faculty of Electrical Engineering and Computing University of Zagreb Croatia ECTM-DIMES Delft University of Technnology Netherlands

Ultrashallow p + -n - -n + silicon photodiodes, fabricated by a pure boron deposition technology, show excellent performance for detection of Deep Ultra Violet (DUV) radiation due to the nanometer deep pn-junctions. The dark current of photodiode is degraded by the damage of the silicon/oxide interface at the diode perimeter region caused by DUV radiation. Reducing the depletion region width across the p + n - junction at the silicon/oxide interface will also invariably increase the electric field, reducing the breakdown voltage and increasing the perimeter component of the junction capacitance. In this paper, the trade-off between the depletion region width, breakdown voltage and junction capacitance is examined for ultrashallow p + -n - -n + photodiodes where an additional ultrashallow doped p-region is introduced as an extension to the p-type guard rings. An optimal doping profile is proposed for the added p-region to obtain minimal degradation of electric characteristics for peak doping of 10 18 cm -3 , 5 · 10 18 cm -3 and 5 · 10 19 cm -3 at junction depths of 50 nm, 10 nm and 2 nm, respectively, and a distance of 0.5 μm between the added p-region and the surrounding n + channel stop.

关键词： Capacitance Photodiodes Junctions Doping profiles Silicon Dark current

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TEAMA: Trust Evaluation Based Authorization Model for Ad Hoc Networks

TEAMA: Trust Evaluation Based Authorization Model for Ad Hoc...

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2011 International conference on Instrumentation,Measurement,computer,Communication and Control (IMCCC2011)(第一届仪器测量、计算机通信与控制国际会议)

作者： Qi Jing Zhong Chen Jianbin Hu Zhi Guan Department of Software Technology School of Software and Microelectronics Peking University Key La Institute of Software School of Electronics Engineering and Computer Science Peking University Key

A wireless Ad Hoc network is an infrastructureless selforganizing *** control problem of strangers may happen because of its strong *** management based on policy can dealt with such problem,which can deliver access control policies to strangers through credential-delegation to give them *** the delegation frameworks are somewhat coarse-grained and *** paper proposes a trust evaluation based authorization model for ad hoc networks (TEAMA),which extends the basic model TBM with trust degree,which is generated by trust evaluation and helps the decisions of credential-grants in trust management based on policy,gives a more objective fine-grained evaluation than usual subjective methods.

关键词： access control trust management trust evaluation trust degree model

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Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Physics-based modeling of hole mobility in ultrathin-body si...

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Proceedings of the International Convention MIPRO

作者： M. Poljak V. Jovanović T. Suligoj Department of Electronics Microelectronics Computer and Intelligent Systems Faculty of Electrical Engineering and Computing University of Zagreb Zagreb Croatia ECTM-DIMES Delft University of Technnology Delft Netherlands

A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We present a physics-based model that includes optical and acoustic phonon scattering, surface roughness scattering (including scattering induced by silicon thickness fluctuations) and Coulomb scattering. Although the model is based on effective mass approximation, comparison of simulation results and experimental data shows an excellent agreement, from 30 nm down to 3.8 nm-thick SOI pMOSFETs.

关键词： Scattering Silicon Surface roughness Rough surfaces MOSFETs Optical surface waves

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Use of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications

Use of neural network to model the FTIR spectra of PECVD sil...

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IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing

作者： Thongchai Thongvigitmanee Wisut Titiroongruang Arckom Srihapat Amporn Poyai Department of Electrical Engineering King Mongkut's Institute of Technology Ladkrabang Bangkok Thailand Thai Microelectronics Center National Electronics and Computer Technology Center Chachoengsao Thailand

In this paper, the empirical process models based on neural network are applied to discover the relationship between inputs and outputs of the plasma enhanced chemical deposition (PECVD) silicon nitride process. The design of experiments are based on a 2 6-2 fractional factorial experiment with four center replicate on six factors which are 1) the SiH 4 flow rate, 2) the NH 3 flow rate, 3) the N 2 flow rate, 4) the chamber pressure, 5) the radio frequency (RF) power/distance between the wafer base and shower gas, and 6) the deposition temperature. Once these experiments are performed, different neural networks are applied to identify these six inputs to the chemical bonding information from the FTIR measurements. The best performances of neural networks for each response are selected based on the smallest prediction error. Then the three-dimensional surface plots are generated to qualitatively interpret factor effects. The corrosion testing in saline solution based on a potentiostatic measurement of an aluminum film with the protective PECVD silicon nitride is demonstrated. This measurement could be used as a tool to identify the best dense PECVD silicon nitride film in order to improve the protective performance of the existing recipe. The silicon nitride film is used as the final passivation layer of the cardiovascular pressure sensor.

关键词： Artificial neural networks Silicon Films Semiconductor device measurement Bonding Substrates Neurons

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The low power 3D-magnetotransistor based on CMOS technology

The low power 3D-magnetotransistor based on CMOS technology

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IEEE SENSORS

作者： Chana Leepattarapongpan Toempong Phetchakul Naritchaphan Penpondee Puttapon Pengpad Arckom Srihapat Ekalak Chaowicharat Charndet Hruanun Amporn Poyai Department of Electronic Faculty of Engineering King Mongkut's Institute of Technology Ladkrabang Bangkok Thailand Thai Microelectronics Center National Electronics and Computer Technology Center Chachoengsao Thailand

ISBN: (纸本)9781424492909

This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B X , B Y , and B Z ) by relying on the difference between base and collector currents (ΔI CB ). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively.

关键词： Magnetic sensors Equations Three dimensional displays Magnetic separation Mathematical model

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Relief mapping for urban and natural environments rendering

Relief mapping for urban and natural environments rendering

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Proceedings of the International Convention MIPRO

作者： D. Janković Ž. Mihajlović AVL/AST-Advanced Simulation Technologies Zagreb Croatia Faculty of Electrical Engineering and Computing Department of Electronics Microelectronics Computer Science and Intelligent Systems University of Zagreb Zagreb Croatia

Terrain models typically contain huge amount of data so they are very time consuming for visualization purposes. This especially comes to the forefront when urban environments are included. The main compromise in representation of the complex environments is between achieved quality and time consumption. With the simple texture representation of complex environments we will accomplish fast application, and with the large polygonal meshes, high quality of the rendered scene. In this paper we propose rendering of urban and natural environments using parallax and relief mapping. This approach combines benefits of the rendering of polygonal meshes and texture approach. Thereby, in the proposed approach improved quality on the one side and increased speed on the other side is combined. The applicability of the method is demonstrated trough parallax and relief mapping within the Irrilicht open source graphics engine. The shaders programs were made with the GLSL shader language. As the result, the tests were made to determine the possible usage of parallax and relief mapping in the display of natural and urban environments.

关键词： Rendering (computer graphics) Urban areas Approximation methods Three dimensional displays Graphics processing unit Pixel

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Controlling Gigahertz and Terahertz Surface Electromagnetic Waves with Metamaterial Resonators

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Physical Review X 2011年第2期1卷 021016-021016页

作者： W.-C. Chen J. J. Mock D. R. Smith T. Akalin W. J. Padilla Department of Physics Boston College 140 Commonwealth Avenue Chestnut Hill Massachusetts 02467 USA Department of Electrical and Computer Engineering Duke University Durham North Carolina 27708 USA Institute of Electronics Microelectronics and Nanotechnology IEMN UMR CNRS 8520 Lille 1 University France

We computationally and experimentally investigate the use of metamaterial resonators as bandpass filters and other components that enable control of guided surface electromagnetic waves. The guided surface electromagnetic wave propagates on a planar Goubau line, launched via a coplanar waveguide coupler with 50Ω impedance. Experimental samples targeted for either microwave or terahertz frequencies are measured and shown to be in excellent agreement with simulations. Metamaterial elements are designed to absorb energy only of the planar Goubau line and yield narrow-band resonances with relatively high quality factors. Two independent configurations of coupled metamaterial elements are demonstrated that modify the otherwise flat transmission spectrum of the planar Goubau line. By physically shunting the capacitive gaps of the coupled metamaterial elements, we demonstrate the potential for a large dynamic range in transmissivity, suggesting the use of this configuration for high-bandwidth terahertz communications.

关键词： Metamaterials Optoelectronics Plasmonics

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