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21st Annual IEEE Applied Power electronics Conference and Exposition, APEC '06

作者： Du, Zhong Tolbert, Leon M. Chiasson, John N. Özpineci, Burak Semiconductor Power Electronics Center Electrical and Computer Engineering North Carolina State University Raleigh NC 27606 ECE Department University of Tennessee Knoxville TN 37996-2100 Power Electronics and Electric Machinery Research Center Oak Ridge National Laboratory NTRC 2360 Cherahala Boulevard Knoxville TN 37932

ISBN: (纸本)0780395476

A method is presented showing that a cascade multilevel inverter can be implemented using only a single DC power source and capacitors. A standard cascade multilevel inverter requires n DC sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single DC power source (e.g., a battery or a fuel cell stack) with the remaining n - 1 DC sources being capacitors. It is shown that one can simultaneously maintain the DC voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output. © 2006 IEEE.

关键词： Electric inverters

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Algorithmic truncation of minimax polynomial coefficients

Algorithmic truncation of minimax polynomial coefficients

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IEEE International Symposium on Circuits and Systems (ISCAS)

作者： S.A. Tawfik H.A.H. Fahmy ECE Department University of Wisconsin Madison USA Electronics and Communications Department Faculty of Engineering Cairo University Giza Egypt School of Computer Engineering Nanyang Technological University Singapore

Elementary and high-level functions can be computed in hardware using polynomial approximation techniques. There are many techniques in the literature to calculate the coefficients of such polynomials. Remez algorithm as presented by Veidinger (1960) provides the optimal polynomial in the Chebyshev sense that is minimizing the maximum error (minimax approximation). This paper presents an algorithm for truncating the coefficients of the minimax polynomials obtained from Remez algorithm using an algorithmic method. A gain of 3 and 4 bits of accuracy over the direct rounding is reported. Muller addressed the same problem but his algorithm is applicable for the second order polynomials only. This paper presents an algorithm that is applicable for any order

关键词： Minimax techniques Polynomials Chebyshev approximation Iterative algorithms Approximation algorithms Hardware Cost function Equations Mixed integer linear programming Algorithm design and analysis

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Quadrature hybrid coupler using photonic transversal approach

Quadrature hybrid coupler using photonic transversal approac...

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Optoelectronics and Communications Conference, OECC

作者： Hossein Emami Lam Anh Bui Sana Mansoori Arnan Mitchell Microelectronics and Materials Technology Centre School of Electrical and Computer Engineering RMIT University Melbourne VIC Australia Department of Electrical and Electronics Engineering College of Engineering University of Bahrain Bahrain

A novel technique to phase shift signal by 90 degrees over a broad frequency range based on transversal signal processing is proposed and practically demonstrated. The proposed technique is suitable for non coherent o... 详细信息

关键词： Transversal filters Optical signal processing Delay Frequency response Optical filters Bandwidth Optical modulation Microwave theory and techniques Signal processing Weight control

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SiGe Profile Optimization for Improved Cryogenic Operation at High Injection

SiGe Profile Optimization for Improved Cryogenic Operation a...

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Bipolar/BiCMOS Circuits and Technology Meeting

作者： Yan Cui Guofu Niu Yun Shi Chendong Zhu Laleh Najafizadeh John D. Cressler Alvin Joseph Electrical and Computer Engineering Department Alabama Microelectronics Science and Technology Center Auburn University Auburn AL USA School of ECE Georgia Institute of Technology Atlanta GA USA IBM Microelectronics Division Essex Junction VT USA

ISBN: (纸本)1424404584

This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection f T is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved f T and beta at high injection

关键词： Silicon germanium Germanium silicon alloys Cryogenics Heterojunction bipolar transistors USA Councils Semiconductor process modeling microelectronics Physics Radio frequency Shape control

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MOTOR IMAGERY BASED BRAIN computer INTERFACE WITH SUBJECT ADAPTED TIME-FREQUENCY TILING

MOTOR IMAGERY BASED BRAIN COMPUTER INTERFACE WITH SUBJECT AD...

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European Signal Processing Conference

作者： Nuri F. Ince Ahmed H. Tewfik Sami Arica Department of Electrical and Electronics Engineering University of Cukurova Turkey Department of Electrical and Computer Engineering University of Minnesota USA e-mail: firat@ece.umn.edu tewfik@ece.umn.edu arica@cu.edu.tr

We introduce a new technique for the classification of motor imagery electroencephalogram (EEG) recordings in a Brain computer Interface (BCI) task. The technique is based on an adaptive time-frequency analysis of EEG signals computed using Local Discriminant Bases (LDB) derived from Local Cosine Packets (LCP). Unlike prior work on adaptive time-frequency analysis of EEG signals, this paper uses arbitrary non-dyadic time segments and adaptively selects the size of the frequency bands used for feature extractions. In an offline step, the EEG data obtained from the C3/C4 electrode locations of the standard 10/20 system is adaptively segmented in time, over a non-dyadic grid. This is followed by a frequency domain clustering procedure in each adapted time segment to maximize the discrimination power of the resulting time-frequency features. Then, the most discriminant features from the resulting arbitrarily segmented time-frequency plane are sorted. A Principal Component Analysis (PCA) step is applied to reduce the dimensionality of the feature space. The online step simply computes the reduced dimensionality features determined by the offline step and feeds them to the linear discriminant. The algorithm was applied to all nine subjects of the BCI Competition 2002. The classification performance of the proposed algorithm varied between 70% and 92.6% across subjects using just two electrodes. The average classification accuracy was 80.6%. For comparison, we also implemented an Adaptive Autoregressive model based classification procedure that achieved an average classification rate of 76.3% on the same subjects, and higher error rates than the proposed approach on each individual subject.

关键词： Electroencephalography Time-frequency analysis Electrodes Signal processing algorithms Feature extraction Classification algorithms Principal component analysis

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Dual Metal Gates with Band-Edge Work Functions on Novel HfLaO High-K Gate Dielectric

Dual Metal Gates with Band-Edge Work Functions on Novel HfLa...

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Symposium on VLSI Technology

作者： X. Wang C. Shen M.-F. Li H. Yu Y. Sun Y. Feng A. Lim H. Sik A. Chin Y. Yeo P. Lo D. Kwong Institute of Microelectronics Singapore SNDL ECE Department National University of Singapore Singapore IMEC Leuven Belgium Department Physics National University of Singapore Singapore Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan

In this work, by using a novel HfLaO high-kappa (HK) gate dielectric, we show for the first time that with a thermal budget of 1000 degC, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ~3.9-4.4 eV and TaN/Pt gate with EWF ~5.5 eV are shown. In addition, by replacing HfO 2 with HfLaO, high k value and low gate tunneling are maintained, BTI V th instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO 2 as estimated by the first-principles calculations

关键词： Hafnium compounds Hafnium oxide MOSFETs Thermal stresses Dielectrics Very large scale integration Voltage Oxygen Virtual colonoscopy Simulated annealing

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A cascade multilevel inverter using a single DC source

A cascade multilevel inverter using a single DC source

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Annual IEEE Conference on Applied Power electronics Conference and Exposition (APEC)

作者： Zhong Du L.M. Tolbert J.N. Chiasson B. Ozpineci Semiconductor Power Electronics Center Electrical and Computer Engineering North Carolina State University Raleigh NC USA ECE Department University of Tennessee Knoxville TN USA Oak Ridge National Laboratory NTRC Knoxville TN USA

A method is presented showing that a cascade multilevel inverter can be implemented using only a single DC power source and capacitors. A standard cascade multilevel inverter requires n DC sources for 2n + 1 levels. Without requiring transformers, the scheme proposed here allows the use of a single DC power source (e.g., a battery or a fuel cell stack) with the remaining n-1 DC sources being capacitors. It is shown that one can simultaneously maintain the DC voltage level of the capacitors and choose a fundamental frequency switching pattern to produce a nearly sinusoidal output.

关键词： Inverters Voltage Capacitors Transformers Batteries Fuel cells Power electronics Frequency Hydrogen Switches

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An ultra low current low cost zinc-air battery discharge monitor utilizing a microcontroller based countdown algorithm

An ultra low current low cost zinc-air battery discharge mon...

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Annual IEEE Conference on Applied Power electronics Conference and Exposition (APEC)

作者： J.J. Nance H.L. Hess T.B. Atwater Microelectronics Research and Communications Institute University of Idaho Moscow ID USA Electrical and Computer Engineering Department University of Idaho Moscow ID USA Electronics Research U.S. Army Communications Fort Monmouth NJ USA

The design and testing of a low cost ultra low power microcontroller based zinc-air battery charge monitor is presented. The zinc-air battery chemistry is a lightweight and efficient portable energy solution that features an extremely flat voltage profile as the battery discharges. This design provides an alternative charge monitoring method to a voltage sampling system. The circuit operates by sampling the outgoing current and performing a count down algorithm. This design utilizes an ultra low loss resistive current sensor and a microcontroller to sample the outgoing current of a zinc-air battery in a fully programmable interval that defaults to two seconds. The circuit shuts down into a sleep mode when not sampling, which draws about 8/spl mu/A from the 12V battery. The average current is 22/spl mu/A. This current will discharge the battery by 1% in approximately 1.54 years. Overall cost is US$7.00 using bulk consumer parts. The paper presents design goals, considerations, and hardware results of the circuit.

关键词： Costs Batteries Monitoring Microcontrollers Sampling methods Circuits Voltage Testing Chemistry Hardware

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High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference

High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large W...

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International Electron Devices Meeting (IEDM)

作者： C. H. Wu B. F. Hung Albert Chin S. J. Wang W. J. Chen X. P. Wang M.-F. Li C. Zhu Y. Jin H. J. Tao S. C. Chen M. S. Liang Institute of Microelectronics Department of Electronics Engineering National Cheng Kung University Tainan Taiwan Nano-Science Technology Ctr Department of EE. Nat'l Chiao-Tung U. U. System of Taiwan Hsinchu Taiwan Graduate Institute of Materials Engineering National Pingtung University of Science and Technology Taiwan SNDL Department of Electrical & Computer Engineering National University of Singapore Singapore Taiwan Semiconductor Manufacturing Corporation Hsinchu Taiwan

The authors report novel 1000degC-stable [Ir 3 Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phi m-eff of 5.08 and 4.24 eV, low V t of -0.10 and 0.18 V, high mobility of 84 and 217 cm 2 /Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured

关键词： Temperature Hafnium compounds Crystallization Dielectrics CMOS technology Leakage current Thermal stability Amorphous materials computer aided manufacturing Very large scale integration

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PDMS based thermopnuematic peristaltic micropump for microfluidic systems

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Journal of Physics: Conference Series 2006年第1期34卷 564-569页

作者： Mamanee, W. Tuantranont, A. Afzulpurkar, N.V. Porntheerapat, N. Rahong, S. Wisitsoraat, A. Department of Microelectronics Engineering Asian Institute of Technology Klong Luang Pathumthani 12120 Phahon Yothin Rd. Klong 1 Thailand Nanoelectronics and MEMS Lab. National Electronics and Computer Technology Center Klong Luang Pathumthani 12120 Phahon Yothin Rd. Klong 1 Thailand

A thermopnuematic peristaltic micropump for controlling micro litters of fluid was designed and fabricated from multi-stack PDMS structure on glass substrate. Pump structure consists of inlet and outlet, microchannel, three thermopneumatic actuation chambers, and three heaters. In microchannel, fluid is controlled and pumped by peristaltic motion of actuation diaphragm. Actuation diaphragm can bend up and down by exploiting air expansion that is induced by increasing heater temperature. The micropump characteristics were measured as a function of applied voltage and frequency. The flow rate was determined by periodically recording the motion of fluid at Nanoport output and computing flow volume from height difference between consecutive records. From the experiment, an optimum flow rate of 0.82 νl/min is obtained under 14 V three-phase input voltages at 0.033 Hz operating frequency. © 2006 IOP Publishing Ltd.

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