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IEEE Region 10 International Conference TENCON

作者： C. Rama Krishna Saswat Chakrabarti Debasish Datta E and ECE Department Indian Institute of Technology Kharagpur India Department of Computer Science and Engineering National Institute of Technical Teacher''s Training and Research Chandigarh India G. S. Sanyal School of Telecommunications Indian Institute of Technology Kharagpur India Department of Electronics and Electrical Communication Engineering Indian Institute of Technology Kharagpur India

The medium access control (MAC) protocol in IEEE 802.11 wireless LAN employs distributed coordination function (DCF) with binary exponential backoff (BEB) algorithm for contention resolution. With BEB, waiting time of a node gets doubled after every unsuccessful transmission. This introduces fast-growing retransmission delays for the backlog traffic. In a mobile ad hoc network (MANET), it would be worthwhile to slow down the growth-rate of waiting time. This is expected because the nodes communicating in a MANET might move out of collision range while waiting for retransmission. In this paper, we explore a modification to BEB algorithm and evaluate its performance through extensive simulations. Simulation results indicate that the proposed modification to BEB enhances packet delivery rate and reduces average end-to-end packet delay.

关键词： Media Access Protocol Intelligent networks Mobile ad hoc networks Access protocols Wireless LAN Delay Centralized control Multiaccess communication computer science Mobile communication

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Consistent simulation of bandgap narrowing in SiGe HBTs 4

Consistent simulation of bandgap narrowing in SiGe HBTs

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4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

作者： Shi, Yun Niu, Guofu Cressler, J.D. Alabama Microelectronics Science and Technology Center Electrical and Computer Engineering Department Auburn University AuburnAL36849 United States School of ECE Georgia Tech. AtlantaGA30332 United States

ISBN: (纸本)0780377877

This work investigates the modeling of heavy doping induced bandgap narrowing (BGN) in highly scaled SiGe HBTs. An inconsistency between simulated results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct the problem. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency in SiGe HBTs is also addressed. © 2003 IEEE.

关键词： Energy gap

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On the scaling limits of low-frequency noise in SiGe HBTs

On the scaling limits of low-frequency noise in SiGe HBTs

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International Semiconductor Device Research Symposium, ISDRS 2003

作者： Johansen, J. Jin, Z. Cressler, J.D. Cui, Y. Niu, G. Liang, Q. Rieh, J.-S. Freeman, G. Ahlgren, D. Joseph, A. Georgia Institute of Technology School of Electrical and Computer Engineering AtlantaGA30332 United States ECE Department Aubum University AuburnAL36849 United States IBM Microelectronics Hopewell JunctionNY12533 United States

ISBN: (纸本)0780381394

Low-frequency noise (LFN) is up-converted to phase noise through the nonlinearities of transistors, placing a fundamental limit on the achievable spectral purity of communications systems. One unique merit of SiGe HBTs is that they can simultaneously provide very small broadband and 1/f noise, giving them an advantage over scaled CMOS and III-V devices for high-frequency wireless building blocks limited by phase noise (e.g., oscillators and mixers). A statistical variation in the LFN spectra of small SiGe HBTs has recently been reported [1], however, and a qualitative explanation was offered which assumes a reduction in the number of noise-generating G/R traps as the device emitter area decreases [1,2]. We present, for the first time, LFN results on SiGe HBTs with fTs of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology generations, and use 2D simulations of 1/f noise to better understand the scaling limitations of noise in SiGe HBTs.

关键词： Phase noise

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Design and comparison of linear synchronous motor and linear induction motor for electromagnetic aircraft launch system

Design and comparison of linear synchronous motor and linear...

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IEEE International Electric Machines and Drives Conference, IEMDC 2003

作者： Štumberger, G. Žarko, D. Timur Aydemir, M. Lipo, T.A. University of Maribor Faculty of Electrical Engineering and Computer Science Smetanova 17 Maribor2000 Slovenia Gazi University Department of Electrical and Electronics Enginering Ankara06570 Turkey University of Wisconsin-Madison Department of ECE 1415 Engineering Dr. MadisonWI53706 United States

ISBN: (纸本)0780378172

Two basic linear motor designs suitable for an electromagnetic aircraft launch system (EMALS) have been presented in the paper. The motors have been designed with an emphasis on easy assembly and replacement even at the cost of slightly reduced performances. Both, linear permanent magnet synchronous motor (LPMSM) and linear induction motor (LIM) are assembled from modular stator segments which can be quickly and easily replaced. Performances and equivalent circuit parameters of the LPMSM and LIM designs are compared at the end of the paper. © 2003 IEEE.

关键词： Timing circuits

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Object-oriented simulator of multi-agent system for temporally rich domains

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Journal of Computing and Information Technology 2003年第3期11卷 201-207页

作者： Ribarić, Slobodan Hrkać, Tomislav Department of Electronics Microelectronics Computer and Intelligent Systems Faculty of Electrical Engineering and Computing University of Zagreb Unska 3 Zagreb10000 Croatia

An object-oriented implementation of a program simulator for a multi-agent system (MAS) is described. The model of a MAS is hierarchical model, consisting of different levels, where each level contains clusters of agents. A paradigm of a blackboard is used for communication among agents, clusters, as well as levels. The Petri Nets with Time Tokens are used as a basic concept for this model. An example of the use of the object-oriented simulator in a dynamic scene analysis is given.

关键词： Multi agent systems

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Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectrics and metal gate electrode

Low temperature MOSFET technology with Schottky barrier sour...

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International Symposium Semiconductor Device Research (ISDRS)

作者： Shiyang Zhu H.Y. Yu S.J. Whang J.H. Chen Chen Shen Chunxiang Zhu S.J. Lee M.F. Li D.S.H. Chan W.J. Yoo A. Du C.H. Tung J. Singh Albert Chin D.L. Kwong Department of Microelectronics Fudan University Shanghai China Silicon Nano Device Laboratory (SNDL) Department of ECE National University of Singapore Singapore Institute of Microelectronics Singapore Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan Department Electrical & Computer Engineering University of Technology Austin TX USA

In this paper, we demonstrate a bulk SSDTs (Schottky barrier S/D) with CVD HfO/sub 2/ high-k dielectric, PVD HfN/TaN metal gate and PtSi (for PMOS) and DySi/sub 2-x/ (for NMOS) silicide source/drain using a low temperature process. Surface removing, cleaning, dipping and silicidation processes are carried out at highest temperature of 420/spl deg/C for 1h after a high-k gate stack formation. The process can be easily extended to UTB-SOI structures. The P-SSDT shows a excellent electrical properties like hole mobility and S/D series resistance.

关键词： Temperature MOSFET circuits Schottky barriers Electrodes High-K gate dielectrics Hafnium oxide Atherosclerosis MOS devices Silicides Surface resistance

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Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation

Analysis of charge trapping and breakdown mechanism in high-...

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International Electron Devices Meeting (IEDM)

作者： Wei Yip Loh Byung Jin Cho Moon Sig Joo M.F. Li D.S.H. Chan S. Mathew Dim-Lee Kwong ECE Dept. National University of Singapore Singapore Institute of Microelectronics Singapore Department of Electrical & Computer Engineering University of Technology Austin TX USA Dept. of Electrical & Computer Engineering The University of Texas Austin TX USA

Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

关键词： Dielectric breakdown High-K gate dielectrics Electrodes Electron traps Electric breakdown High K dielectric materials Rapid thermal annealing Voltage Charge carrier processes Silicon

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On the scaling limits of low-frequency noise in SiGe HBTs

On the scaling limits of low-frequency noise in SiGe HBTs

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International Symposium Semiconductor Device Research (ISDRS)

作者： J. Johansen Z. Jin J.D. Cressler Y. Cui G. Niu Q. Liang J.-S. Rieh G. Freeman D. Ahlgren A. Joseph School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA USA ECE Department Aubum University Auburn AL USA IBM Microelectronics Hopewell Junction NY USA

In this paper, we present for the first time LFN results on SiGe HBTs with f/sub T/'s of 210 GHz and 350 GHz, compare geometrical scaling-induced small-size effects in 1/f noise with previous SiGe technology gener... 详细信息

关键词： Low-frequency noise Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Noise generators Phase noise Noise measurement Isolation technology Circuit noise Geometry

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Investigation of performance limits of germanium double-gated MOSFETs

Investigation of performance limits of germanium double-gate...

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International Electron Devices Meeting (IEDM)

作者： T. Low Y.T. Hou M.F. Li Chunxiang Zhu A. Chin G. Samudra L. Chan D.-L. Kwong ECE Department National University of Singapore Singapore Institute of Microelectronics Singapore Dept. of Electronics Eng National Chiao Tung Univ Hsinchu Taiwan Technology Development Chartered Semiconductor Manufacturing Singapore Department of Electrial and Computer Engineering University of Technology Austin TX USA Dept. of Electrical and Computer Engineering University of Texas Austin TX USA

关键词： Germanium MOSFETs Tunneling Low voltage Quantization Doping Electrons Silicon microelectronics Manufacturing

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Investigation of Performance Limits of Germanium Double-Gated MOSFETs

Investigation of Performance Limits of Germanium Double-Gate...

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IEEE International Electron Devices Meeting

作者： Low, Tony Hou, Y.T. Li, M.F. Zhu, Chunxiang Chin, Albert Samudra, G. Chan, L. Kwong, D.-L. Silicon Nano Device Lab. ECE Department National University of Singapore Singapore 119260 Institute of Microelectronics Singapore 117684 Dept. of Electronics Eng. National Chiao Tung Univ. Hsinchu Taiwan Technology Development Chrtd. Semiconductor Manufacturing S738406 Singapore Dept. of Electrical Engineering University of Texas Austin TX 78712 United States

The performance limits and engineering issues of ultra-thin body (UTB) double gated (DG) Ge channel n-MOSFETs are examined in this paper. The non-equilibrium Green's Function (NEGF) approach, including both L and Δ conduction valleys, is employed for source to drain current, while the improved WKB tunneling is employed for substrate to drain (band-to-band BTB) and gate to channel current. All possible Ge surfaces and channel orientations are explored. In terms of drive current ION, highly anisotropic Ge〈110〉 channel exhibits highest ION which increases with body thickness scaling;Ge〈100〉 exhibits similar ballistic limit as Si〈100〉 due to increasing Δ valley carrier dominance at UTB regime;Ge〈111〉exhibits higher ballistic limit but decrease at UTB regime due to the small density-of-states mass of L valley. Sub-threshold slope is worse for Ge〈110〉 and Ge〈111〉 as channel length is scaled down. In terms of standby current IOFF and gate leakage I G for low standby power (LSTP) devices, BTB tunneling is large due to the small energy gap of Ge. This imposes a limit on maximum tolerable supply voltage (of which Ge〈111〉 is worst and Ge〈100〉 is best) thus requiring low voltage operation. Body scaling is effective in suppressing BTB tunneling, since carrier quantization causes effective energy gap widening. The low voltage requirement demands small EOT for minimal oxide voltage drop. However, gate leakage will impose a limit for further EOT scaling, of which Ge 〈110〉 is worst and Ge〈111〉 is best. Our results conclude that in addition to lower power supply voltage advantage, the engineered Ge〈110〉 devices with suppressed BTB and gate leakages can achieve better intrinsic delay to OFF power ratio than Si〈100〉 devices.

关键词： MOSFET devices

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