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Symposium on VLSI Technology

作者： T. Low Y.T. Hou M.F. Li Chunxiang Zhu D.-L. Kwong A. Chin Silicon Nano Device Lab ECE Department National University of Singapore Singapore Department Electrical and Computer Engineering University of Texas Austin Austin TX USA Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan

Ge is promising as an alternative channel material due to its high carrier mobility. In this work, we report an evaluation of Ge MOS from quantization and gate tunneling current simulations. Key findings are: (1) Electron quantization effect is stronger and thus more important in Ge than in Si, and results in smaller inversion capacitance in NMOS. (2) Using constant inversion charge for supply voltage V/sub DD/ scaling, moderate reduction in inversion charge is required to meet ITRS roadmap, which can be achieved with high mobility channel. (3) Due to its smaller electron mass and resulting higher electron quantization energy, Ge MOS shows considerably larger gate tunneling current than Si MOS for the same gate dielectric. (4) High-K gate dielectrics are required for low leakage; however, significant challenges exist in the formation of high quality interface layer between high-K and Ge.

关键词： Germanium Quantization Tunneling MOS devices Dielectric devices Voltage Electron mobility High K dielectric materials High-K gate dielectrics Dielectric materials

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Voltage and temperature dependence of capacitance of high-k HfO/sub 2/ MIM capacitors: a unified understanding and prediction

Voltage and temperature dependence of capacitance of high-k ...

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International Electron Devices Meeting (IEDM)

作者： Chunxiang Zhu Hang Hu Xiongfei Yu S.J. Kim A. Chin M.F. Li Byung Jin Cho D.L. Kwong Silicon Nano Device Laboratory Department of Electrical and Computer Engineering National University of Singapore Singapore Department of Electronics Engineering National Chiao Tung University Taiwan Institute of Microelectronics Singapore Department of Electrical & Comp Engineering University of Technology Austin TX USA

High-k MIM capacitors like HfO/sub 2/ are of great interest for Si analog and RF applications recently. This work is intended to explain the dependences of VCC on dielectric thickness and frequency as well as the temperature dependence of capacitance of HfO/sub 2/ MIM capacitors. Based on a free carrier injection model, a unified understanding is achieved for the first time: (1) the thickness (t) dependence of VCC (/spl alpha/), which exhibits a relation of /spl alpha//spl prop/t/sup -n/, is an intrinsic property due to E-field polarization; (2) the frequency dependence of VCC, the stress induced VCC, and temperature dependences of capacitance are all due to change of relaxation time with different carrier mobility in the insulator. This model is also applied to predict the VCC for future applications.

关键词： Voltage Temperature dependence Capacitance High K dielectric materials High-K gate dielectrics Hafnium oxide MIM capacitors Radio frequency Polarization Frequency dependence

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Design and comparison of linear synchronous motor and linear induction motor for electromagnetic aircraft launch system

Design and comparison of linear synchronous motor and linear...

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IEEE International Conference on Electric Machines and Drives (IEMDC)

作者： G. Stumberger D. Zarko M. Timur Aydemir T.A. Lipo Faculty of Electrical Engineering and Computer Science University of Maribor Maribor Slovenia Department of ECE University of Wisconsin-Madison Madison WI USA Department of Electrical and Electronics Enginering Gazi University Ankara Turkey

Two basic linear motor designs suitable for an electromagnetic aircraft launch system (EMALS) have been presented in the paper. The motors have been designed with an emphasis on easy assembly and replacement even at the cost of slightly reduced performances. Both, linear permanent magnet synchronous motor (LPMSM) and linear induction motor (LIM) are assembled from modular stator segments which can be quickly and easily replaced. Performances and equivalent circuit parameters of the LPMSM and LIM designs are compared at the end of the paper.

关键词： Synchronous motors Induction motors Electromagnetic induction Electromagnetic launching Aircraft Permanent magnet motors Assembly Costs Stators Equivalent circuits

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Experimental Characterization of the Reliability of Multi-Terminal Dual-Damascene Copper Interconnect Trees

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MRS Online Proceedings Library 2003年第1期766卷 151-156页

作者： C. L. Gan C. V. Thompson K. L. Pey W. K. Choi C. W. Chang Q. Guo Advanced Materials for Micro- and Nano-Systems Programme Singapore-MIT Alliance Singapore Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge USA School of Electrical & Electronics Engineering Nanyang Technological University Nanyang Avenue Singapore Department of Electrical & Computer Engineering National University of Singapore Singapore Institute of Microelectronics Singapore

The reliability of Cu dual-damascene interconnect trees with 3-terminal (dotted-I), 4-terminal (‘T’) and 5-terminal (‘+’) configurations has been investigated. The lifetime of multiterminal interconnect trees with the same current density through the common middle via was determined to be independent of the number of segments connected at the common junction. Furthermore, our experimental results on dotted-I test structures showed an increase in the reliability of the interconnect tree when the distribution of a same current was not equal in the two connected segments, especially for the cases where one of the segments was acting as a passive reservoir or active source of Cu atoms for the adjoining segment. Due to the low barrier for void nucleation at the Cu/Si3N4 interface, the presence of any small atomic source in neighboring segments will enhance the reliability of a connected segment in which Cu atoms are being drained away. As a consequence, failure can occur in a tree segment which is stressed at significantly lower current densities than more highly stressed adjoining segments.

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High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications

High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate M...

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International Electron Devices Meeting (IEDM)

作者： Hang Hu Shi-Jin Ding H.F. Lim Chunxiang Zhu M.F. Li S.J. Kim X.F. Yu J.H. Chen Y.F. Yong Byung Jin Cho D.S.H. Chan S.C. Rustagi M.B. Yu C.H. Tung Anyan Du Doan My P.D. Foot A. Chin Dim-Lee Kwong Dept. of ECE National Univ. of Singapore Singapore Institute of Microelectronics Singapore Dept. of Electr. & Comput. Eng. Nat. Univ. of Singapore Singapore SNDL Department of ECE National University of Singapore Singapore Dept. of Electronics Eng. National Chiao Tung Univ. Taiwan Department of Electrical & Computer Engineering University of Technology Austin TX USA Dept. of Electrical & Computer Eng. Univ. of Texas Austin TX USA

In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

关键词： Hafnium oxide Laminates MIM capacitors Capacitance Metal-insulator structures Leakage current Low voltage Materials reliability Radio frequency RF signals

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RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

RF passive devices on Si with excellent performance close to...

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International Electron Devices Meeting (IEDM)

作者： A. Chin K.T. Chan C.H. Huang C. Chen V. Liang J.K. Chen S.C. Chien S.W. Sun D.S. Duh W.J. Lin Chunxiang Zhu M.F. Li S.P. McAlister Dim-Lee Kwong Department of Electronics Engineering National Chiao Tung University Hsinchu Taiwan CR&D United Microelectronics Corporation Limited Hsinchu Taiwan Institute of Nuclear Energy Research Taoyuan Taiwan Si Nano Device Laboratory Department of Electrical & Computer Engineering National University of Singapore Singapore National Research Council Canada Ottawa Canada Department of Electrical & Computer Engineering University of Technology Austin TX USA

High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.

关键词： Radio frequency Inductors Coplanar waveguides Microstrip filters Microstrip resonators Narrowband Band pass filters Resonator filters Optical ring resonators Protons

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Fabrication of SiC microelectromechanical systems using one-step dry etching

Journal of Vacuum Science & Technology B: Microelectronics a...

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Journal of Vacuum Science & Technology B: microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2003年第6期21卷 2998-3001页

作者： Liudi Jiang R. Cheung M. Hassan A. J. Harris J. S. Burdess C. A. Zorman M. Mehregany School of Engineering and Electronics Scottish Microelectronics Centre The University of Edinburgh King’s Buildings West Mains Road Edinburgh EH9 3JF United Kingdom School of Electrical Electronics and Computer Engineering University of Newcastle Upon Tyne Newcastle NE1 7RU United Kingdom School of Mechanical and Systems Engineering University of Newcastle Upon Tyne Newcastle NE1 7RU United Kingdom Department of Electrical Engineering and Computer Science Case Western Reserve University Cleveland Ohio 44106

A simple one-step inductively coupled plasma etching technique has been developed for the fabrication of SiC resonant beam structures. Straight cantilever and bridge devices have been made successfully. The structures have been actuated and resonant frequencies ranging from ∼120 kHz to ∼5 MHz have been measured. Comparison of the theoretically simulated and experimentally measured resonant frequencies shows the presence of significant tensile stress in bridge structures while the cantilever beams are free of stress. The degree of the tension in the bridge structures has been found to be independent of the bridge length.

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A CAD framework for co-design and analysis of CMOS-SET hybrid integrated circuits 03

A CAD framework for co-design and analysis of CMOS-SET hybri...

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IEEE International Conference on computer-Aided Design

作者： S. Mahapatra K. Banerjee F. Pegeon A.M. Ionescu Electronics Laboratory (LEG) Institute of Microelectronics and Microsystems (IMM) Swiss Federal Institute of Technology Lausanne Switzerland Electronics Laboratory (LEG) Swiss Federal Institute of Technology Lausanne (EPFL) Lausanne Switzerland Department of Electrical & Computer Engineering University of California Santa Barbara CA USA Silvaco Data Systems Inc. Grenoble France Silvaco Data Systems Grenoble France

ISBN: (纸本)9781581137620

This paper introduces a CAD framework for co-simulation of hybrid circuits containing CMOS and SET (Single Electron Transistor) devices. An improved analytical model for SET is also formulated and shown to be applicable in both digital and analog domains. Particularly, the extension of the recent MIB model for single/multi gate symmetric/asymmetric device for a wide range of drain to source voltage and temperature is addressed. Circuit level co-simulations are successfully performed by implementing the SET analytical model in Analog Hardware Description Language (AHDL) of a professional circuit simulator SMARTSPICE. Validation at device and circuit level is carried out by Monte-Carlo simulations. Some novel functionality hybrid CMOS-SET circuit characteristics: (i) SET neuron, (ii) Multiple valued logic circuit and (iii) a new Negative Differential Resistance (NDR) circuit, are also predicted by the proposed SET model and analyzed using the new hybrid simulator.

关键词： Hybrid integrated circuits Analytical models Circuit simulation Predictive models Single electron transistors Semiconductor device modeling Voltage Temperature distribution Hardware design languages Neurons

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Volume rendering with least squares spline reconstruction

Volume rendering with least squares spline reconstruction

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9th IEEE International Conference on electronics, Circuits and Systems, ICECS 2002

作者： Mihajlović, Željka Budin, Leo Kalafatić, Zoran Department of Electronics Microelectronics Computer and Intelligent Systems Faculty of Electrical Engineering and Computing Unska 3 10000 Zagreb Croatia

ISBN: (纸本)0780375963

This paper presents a volume rendering procedure with embedded least square spline reconstruction. The first part of this paper describes a technique for the continuous representation of discrete signals by using B-splines. Volume element space is an example of the discrete signal which can be continuously represented in terms of the B-spline. Volume rendering is very time-consuming procedure and therefore we down-sample the initial size of the volume. Before the down-sampling some low-pass prefiltering is required. Our design of the prefilter is based on considering the combined operation of the prefiltering and the reconstruction postfiltering. The second part of this paper deals with embedding of the least square spline filter into the volume rendering procedure. The position of the reconstruction point is arbitrary in the volume element space. Reconstruction of the normal vector required for shading could be easily derived from the continuous reconstruction function. © 2002 IEEE.

关键词： Volume rendering

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Volume rendering with least squares spline reconstruction

Volume rendering with least squares spline reconstruction

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IEEE International Conference on electronics, Circuits and Systems (ICECS)

作者： Z. Mihajlovic L. Budin Z. Kalafatic Department of Electronics Microelectronics Computer and Intelligent Systems Faculty of Electrical Engineering and Computing Hrvatska Zagreb Croatia

This paper presents a volume rendering procedure with embedded least square spline reconstruction. The first part of this paper describes a technique for the continuous representation of discrete signals by using B-splines. Volume element space is an example of the discrete signal which can be continuously represented in terms of the B-spline. Volume rendering is a very time-consuming procedure and therefore we down-sample the initial size of the volume. Before the down-sampling, some low-pass prefiltering is required. Our prefilter design is based on considering the combined operation of the prefiltering and the reconstruction postfiltering. The second part of this paper deals with embedding of the least square spline filter into the volume rendering procedure. The position of the reconstruction point is arbitrary in the volume element space. Reconstruction of the normal vector required for shading could be easily derived from the continuous reconstruction function.

关键词： Least squares methods Spline Image reconstruction Filters Interpolation Space technology Surface reconstruction Embedded computing Kernel microelectronics

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