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A diagnosis method for single logic design errors in gate-level combinational circuits

Systems and computers in Japan 1998年第6期28卷

作者： Atsushi Yoshikawa Seiji Kajihara Masahiro Numa Kozo Kinoshita Microelectronics Research Laboratories NEC Corporation Kanagawa Japan 229-11 Department of Computer Sciences and Electronics Kyushu Institute of Technology Iizuka Japan 820 Department of Electrical and Electronics Engineering Kobe University Kobe Japan 657 Department of Applied Physics Osaka University Suita Japan 565

This paper proposes a method for diagnosing logic design errors in gate-level combinational circuits, and discusses how to correct them. Some previously proposed design error models are explained at gate-level. This diagnosis method includes the vector pair analysis that has been developed for test pattern generation and fault diagnosis for multiple stuck-at faults. In vector pair analysis, logic values due to design errors are regarded as logic values caused by stuck-at faults and its results give some information on how to correct the design errors. However, since diagnosis using vector pair analysis cannot be applied to missing lines, their diagnosis uses another method based on the analysis of controlling values for input vectors with incorrect output responses. We also propose another diagnosis method for locating design errors in smaller areas, by the vector pair analysis. The experimental results for ISCAS'85 benchmark circuits show that the proposed method is effective for single design errors. © 1997 Scripta Technica, Inc. Syst Comp Jpn, 28(6): 30–39, 1997

关键词： logic design error logic verification fault diagnosis vector pair analysis

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Tunneling devices and applications in high functionality/speed digital circuits

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SOLID-STATE electronics 1997年第10期41卷 1515-1524页

作者： Haddad, GI Mazumder, P Center for High Frequency Microelectronics Solid State Electronics Laboratory Electrical Engineering and Computer Science Department University of Michigan Ann Arbor MI 48109-2122 U.S.A.

Tunneling phenomena can be used to realize devices with unique IT-V characteristics (negative differential resistance) which can be employed to design various types of digital circuits with a significantly lower number of transistors, extremely fast switching speeds, very low power consumption and pipelining capability at the basic gate level (nanopipelining) which results in higher system throughput. In this article, we will present the basic properties of various types of devices which have been proposed for these applications including resonant tunneling diodes (RTDs), Esaki tunnel diodes (ETDs), and various types of transistors including resonant hot electron transistors (RHETs) and tuaneling bipolar transistors (TBTs). We will also compare the anticipated performance of various types of logic gates and digital circuit implementations utilizing these devices with conventional CMOS circuits. (C) 1997 Elsevier Science Ltd.

关键词： Digital circuits

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Responsivity and impact ionization coefficients of Si1-xGex photodiodes

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1996年第6期43卷 977-981页

作者： Lee, JJ GutierrezAitken, AL Li, SH Bhattacharya, PK Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA SGS-Thomson Microelectronics Phoenix AZ USA

The spectral response and impact ionization coefficient ratio of Si1-xGex have been determined. Measurements were made on p(+)-i-n(+) diodes grown by solid/gas source molecular beam epitaxy. The diodes are characterized by reverse breakdown voltages of 4-12 V and dark currents of 20-170 pA/mu m(2). The long wavelength cut-off of the diodes increases from 1.2 mu m to 1.6 mu m as x increases from 0.08 to 1.0 with a maximum responsivity of 0.5 A/W in all the diodes tested. The ratio alpha/beta varies from 3.3 to 0.3 in the same composition range, with alpha/beta = 1 at x congruent to 0.45. These results have important implications in the use of this material system in various photodetection applications.

关键词： Impact ionization Photodiodes Semiconductor diodes Photonic band gap Dark current Silicon alloys Epitaxial growth Optical fiber communication Optical noise Photodetectors

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Experimental demonstration of an all-optical routing node for multihop wavelength routed networks 19

Experimental demonstration of an all-optical routing node fo...

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19th Optical Fiber Communication Conference, OFC 1996

作者： Blumenthal, D.J. Shell, M. Gao, Q. Vaughn, M.D. Wang, A. Rigole, P.-J. Nilsson, S. Microelectronics Research Center School of Electrical and Computer Engineering Georgia Institute of Technology AtlantaGA30332 United States Laboratory of Photonics and Microwave Engineering Department of Electronics Royal Institute of Technology Electrum 229 KistaS-16440 Sweden

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Intermodulation analysis of FET resistive mixers using Volterra series

Intermodulation analysis of FET resistive mixers using Volte...

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Microwave, MTT-S International Symposium

作者： S. Peng P.J. McCleer G.I. Haddad Computer & Communication Research Laboratories Industrial Technology and Research Institute Taiwan Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan USA

We have implemented the Volterra-series method to analyze intermodulation (IM) distortion in FET resistive mixers. The nonlinearities of the channel conductance of a NE71000 MESFET and a NE32400 HFET were first characterized using a low-frequency harmonic power measurement. The data was then used in a simulation program and results for two-tone IM distortion in X-band were compared with the measured data for both MESFET and HFET resistive mixer circuits. Very good agreement was achieved in each case. We have also shown by simulation that the two separate contributions to the third-order IM distortion from the mixing between the input signals themselves and the mixing between the input signals and the second-order mixing products have a very strong cancellation, which results in the low IM distortion in the FET resistive mixers observed in measurements.

关键词： FETs Harmonic analysis Intrusion detection HEMTs MODFETs Distortion measurement Frequency MESFETs Power system harmonics Power measurement

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RF analog and digital circuits in SiGe technology

RF analog and digital circuits in SiGe technology

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IEEE International Conference on Solid-State Circuits (ISSCC)

作者： J.R. Long M.A. Copeland S.J. Kovacic D.S. Malhi D.L. Harame Department of Electrical & Computer Engineering University of Toronto Toronto Canada Department of Electronics Carleton University Ottawa Canada Bell Northern Research Limited Ottawa Canada Microelectronics Division IBM East Fishkill NY USA

The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.

关键词： Radio frequency Digital circuits Silicon germanium Germanium silicon alloys Noise figure Heterojunction bipolar transistors Preamplifiers Impedance Energy consumption Voltage

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High performance self-aligned SiGe p-type modulation-doped field-effect transistors

High performance self-aligned SiGe p-type modulation-doped f...

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Device Research Conference

作者： M. Arafa K. Ismail J.O. Chu J. Adesida Coordinated Science Laboratory Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering University of Illinois Urbana IL USA Department of Electronics Engineering Cairo University Giza Egypt IBM Thomas J. Watson Research Center Yorktown Heights NY USA

We report on self-aligned gate p-type SiGe MODFETs which exhibit superior performance in comparison with p-type devices using other technologies. The MODFETs are fabricated using a new process that benefits from a sha... 详细信息

关键词： Silicon germanium Germanium silicon alloys Epitaxial layers MODFETs HEMTs Ohmic contacts FETs Radio frequency Plasma temperature Contact resistance

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NONLINEAR MODELS FOR THE INTERMODULATION ANALYSIS OF FET MIXERS

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1995年第5期43卷 1037-1045页

作者： PENG, S MCCLEER, PJ HADDAD, GI Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

An accurate, detailed analysis program has been developed for intermodulation distortion (IMD) simulation of FET mixers, This program is very efficient at calculating the IMD from multiple RF inputs. We have proposed a simplified nonlinear model for IMD analysis of FET gate mixers. The accuracy of the simplified model has been verified experimentally using two different MESFET mixers and one HEMT mixer at X band, All the tests show good agreement between measured results and the calculated results for second- and third-order IMD, The simplified model is based on modeling the derivative of the device transconductance by a sum of a Gaussian function and a linear function of the gate voltage, Drain bias dependence is ignored. The advantage of this model is that it can be used for both MESFET and HEMT mixers, and its fitting parameters can be easily determined from a nonlinear characterization of the devices at low frequencies.

关键词： FETs RF signals Signal analysis MESFETs Harmonic analysis Circuit simulation Radio frequency HEMTs Mixers Diodes

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Evaluating performance of the MPQ policy for input and output queueing ATM switch supporting multiple traffic classes

Evaluating performance of the MPQ policy for input and outpu...

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IEEE Singapore International Conference on Networks

作者： S. Ahmed Microelectronics and Communication Research Group Department of Electronics and Computer Engineering Faculty of Engineering Universiti Pertanian Malaysia Serdang Selangor Darul Ehsan Malaysia

We propose a mixed priority queueing (MPQ) model to improve the quality of service (QOS) for 3 different classes of traffic in an ATM switch. A single stage input and output buffered nonblocking ATM switch is considered. In order to resolve a certain degree of external conflicts at the output ports, the switching fabric allows limited queueing at the output ports incorporating output buffers of a suitable size. The problem of overflow at the output buffers is solved by placing rejected cells in the input port buffers. The MPQ scheme is implemented as a buffer management scheme on the input and output port buffers of the switch. Using computer simulation under both uniform and bursty traffic, the paper analyzes the throughput, delay and cell loss probability (CLP) for the each class of traffic with a variety of traffic loads and switch sizes. It is shown that the performance of the ATM switch increases in terms of throughput, delay and cell loss probability (CLP).

关键词： Switches Traffic control Asynchronous transfer mode Quality of service Throughput Delay Fabrics computer simulation Telecommunication traffic Performance loss

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High performance submicron-gate SiGe p-type modulation-doped field-effect transistors

High performance submicron-gate SiGe p-type modulation-doped...

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Device Research Conference

作者： M. Arafa P. Fay K. Ismail J.O. Chu B.S. Meyerson I. Adesida Coordinated Science Laboratory Center for Compound Semicondutor Microelectronics and Department of Electrical and Computer Engineering University of Illinois IL USA Electronics Cairo University Giza Egypt IBM IBM Thomas J. Watson Research Center Yorktown Heights USA

High transconductance p-type field-effect transistors (FETs) are essential for the fabrication of high speed complementary circuits. Unfortunately, the much lower mobility of holes in comparison to electrons in Si has been responsible for the large gap between the performance of n-type and p-type devices. Recent advances in the growth of high quality SiGe has lead to structures with higher hole mobilities. This has been attributed to the light hole-heavy hole band splitting which results in less band mixing and a smaller in-plane effective mass. In this work, we report our work on the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs.

关键词： Silicon germanium Germanium silicon alloys Epitaxial layers MODFETs HEMTs Transconductance FETs Fabrication Circuits Charge carrier processes

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