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STUDY OF THE CONSEQUENCE OF EXCESS INDIUM IN THE ACTIVE CHANNEL OF INGAAS/INALAS HIGH ELECTRON-MOBILITY TRANSISTORS ON DEVICE PROPERTIES

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APPLIED PHYSICS LETTERS 1988年第9期52卷 728-730页

作者： NG, GI PAVLIDIS, D QUILLEC, M CHAN, YJ JAFFE, MD SINGH, J Center for High Frequency Microelectronics Solid State Electronics Laboratories Department of Electrical Engineering and Computer Science The University of Michigan Ann Arbor Michigan 48109‐2122

A study of the properties of In0.52Al0.48As/In0.53+xGa0.47−xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes a biaxial compressive strain of 0.49% to 0.84% in the channel, increases the band‐edge discontinuity from 0.437 to 0.500 eV, and reduces the carrier mass by 6%. Experimental characterizations support the theoretical predictions by demonstrating an increase of mobility from 9900 to 11 200 cm2/V s at 300 K, and a transconductance enhancement from 160 to at least 230 mS/mm.

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CHARACTERISTICS OF STRAINED IN0.65GA0.35AS/IN0.52AL0.48AS HEMT WITH OPTIMIZED TRANSPORT PARAMETERS

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 1988年第9期9卷 439-441页

作者： NG, GI HONG, WP PAVLIDIS, D TUTT, M BHATTACHARYA, PK Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Bell Communications Research Inc. Red Bank NJ USA

The DC and microwave performance of a strained In/sub 0/./sub 65/Ga/sub 0/./sub 35/As/In/sub 0/./sub 52/A1/sub 0/./sub 48/As HEMT (high-electron-mobility transistors) is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic DC transconductance and cutoff frequence of 1.4- mu m-long gate HEMTs are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35*10/sup 7/ to 1.55*10/sup 7/ cm/s at 300 K.< >

关键词： HEMTs Pulse measurements Indium gallium arsenide Current measurement Electrons Carrier confinement Frequency microelectronics Solid state circuits Laboratories

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Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In0.52Al0.48As and In1−x−yGaxAlyAs

Journal of Vacuum Science & Technology B: Microelectronics P...

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Journal of Vacuum Science & Technology B: microelectronics Processing and Phenomena 1988年第2期6卷 665-667页

作者： Albert Chin Pallab Bhattacharya Won‐Pyo Hong Wei‐Qi Li Center for High Frequency Microelectronics and Solid State Electronics Laboratory Department of Electrical Engineering & Computer Science The University of Michigan Ann Arbor Michigan 48109‐2122

Albert Chin, Pallab Bhattacharya, Won‐Pyo Hong, Wei‐Qi Li; Summary Abstract: Molecular‐beam epitaxial growth of high‐quality In0.52Al0.48As and In1−x−yGaxAlyAsS

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Processing conditions for polysilicon films with tensile strain for large aspect ratio microstructures

Processing conditions for polysilicon films with tensile str...

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IEEE Workshop on Solid-State Sensor and Actuator

作者： H. Guckel D.W. Burns H.A.C. Tilmans C.C.G. Visser D.W. DeRoo T.R. Christenson P.J. Klomberg J.J. Sniegowski D.H. Jones Wisconsin Center of Applied Microelectronics Department of Electrical and Computer Engineering University of Wisconsin Madison WI USA Delft University of Technology Delft Netherlands Delco Electronics Corporation Kokomo IN USA

The processing conditions to obtain high-quality and repeatable polysilicon films are described. These include substrate preparation, the deposition procedure, reactor configuration, and postdeposition treatment. Examples of large-aspect-ratio microstructures such as long, thin beams and tuning forms for sensor applications and large-area diaphragms for piezoresistive microphones and X-ray masks are presented to illustrate the potential of polysilicon films that are in tension.< >

关键词： Tensile strain Surface morphology Surface contamination Silicon Capacitive sensors Microstructure Substrates Mechanical factors Semiconductor films Crystalline materials

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Mechanical properties of fine grained polysilicon-the repeatability issue

Mechanical properties of fine grained polysilicon-the repeat...

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IEEE Workshop on Solid-State Sensor and Actuator

作者： H. Guckel D.W. Burns H.A.C. Tilmans D.W. DeRoo C.R. Rutigliano Wisconsin Center of Applied Microelectronics Department of Electrical and Computer Engineering University of Wisconsin Madison WI USA Delco Electronics Corporation Kokomo IN USA BIT Inc. Beaverton OR USA

Calculation and measurements of Young's modulus, Poisson's ratio, shear modulus, and internal strain for fine-grained polysilicon as a function of processing conditions are presented. Calculations are based on appropriate averaging of single-crystal silicon properties, taking into account the film morphology. Experimental data are taken from strain diagnostic and resonant beam structures. It is found that polysilicon films can be in tension and that the intrinsic quality factor is approaching 75000.< >

关键词： Mechanical factors Silicon Crystalline materials Grain boundaries Morphology Crystal microstructure Semiconductor films Tensile stress Structural beams Capacitive sensors

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A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

A HEMT Monolithic Double Channel Attenuator with Broadband C...

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European Conference on Microwave

作者： Jean-Louis Cazaux Dimitris Pavlidis Geok-Ing Ng Marcel Tutt Alcatel ESpace Toulouse France Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical engineering and Computer Science University of Michigan Ann Arbor MI USA University of Michigan USA

Double Channel HEMT's are used as variable resistor elements in a bridged-T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion loss (2.8dB minimum) is obtained with the help of the heterojunction approach which results in smaller ON-channel resistances than MESFET technology.

关键词： HEMTs Attenuators Dynamic range Attenuation FETs Insertion loss Circuits Heterojunctions MESFETs Capacitance

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A 1024-element high-performance silicon tactile imager

A 1024-element high-performance silicon tactile imager

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International Electron Devices Meeting (IEDM)

作者： K. Suzuki K. Najafi K.D. Wise Sensor Research Laboratory Microelectronics Research Laboratories NEC Corporation Limited Kanagawa Japan Center of Integrated Sensors and Circuits Solid-State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

A 32-*32-element capacitive silicon tactile imager has been developed for use in precision robotics applications where high density and high resolution are important. The silicon chip measures 1.8 cm*1.7 cm and is organized in an X-Y matrix of 1024 capacitor elements on 0.5-mm centers. The process uses two boron diffusions (deep and shallow) followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. This results in a thick center plate for the sense capacitor supported by thinner beams. A data acquisition system used with the device offers over 7-bit force resolution with a maximum operating force of about 1 gm/element.< >

关键词： Silicon Capacitors Robots Image resolution Electrostatic measurements Semiconductor device measurement Boron Diffusion bonding Wafer bonding Data acquisition

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Monolithic integrated circuit applications of InGaAs/InAlAs HEMTs

Monolithic integrated circuit applications of InGaAs/InAlAs ...

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Annual IEEE Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)

作者： M. Tut D. Pavlidis G.I. Ng M. Weiss J.L. Cazaux Dept. of Electr. Eng. & Comput. Sci. Michigan Univ. Ann Arbor MI USA Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

The features of InGaAs/InAlAs HEMT (high-electron-mobility transistor) technology are discussed in view of its potential for MMIC applications. Small- and large-signal characteristics benefit from the introduction of a strained layer in the channel. InGaAs HEMTs have a third-order intermodulation distortion point 4-dB higher than GaAs/AlGaAs, and are therefore very suitable for full multistage amplifier integration. A first demonstration of integration capability is shown with monolithic InGaAs attenuators which show 1.5-dB insertion loss and 18-dB dynamic range from 545 MHz to 25 GHz.< >

关键词： Monolithic integrated circuits Indium gallium arsenide Indium compounds HEMTs MODFETs Integrated circuit technology MMICs Intermodulation distortion Gallium arsenide Attenuators

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A Controlled-Avalanche Superlattice Transistor

A Controlled-Avalanche Superlattice Transistor

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IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

作者： A. Chin P. Bhattacharya Center for High-Frequency Microelectronics and Solid State Electronics Laboratory Department of Electrical Engineering & Computer Science University of Michigan Ann Arbor MI USA

A novel n-p-n bipolax avalanche transistor is demonstrated. Controlled avalanche and large current output is achieved by incorporating in the collector junction a few periods of a symmet- ric or asymmetric multi-quantum well in which only electrons predominanttly multiply. The theory of operation, materials growth by molecular beam epitaxy, impact ionization data in the quantum wells and device performance are described. Optical gains as high as 140 are measured in these transistors.

关键词： Semiconductor superlattices Impact ionization Electron optics Optical superlattices Optical devices Avalanche photodiodes Photonic band gap Conducting materials Charge carrier processes Voltage

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Influence of transit time effects on the optimum design and maximum oscillation frequency of quantum well oscillators

Influence of transit time effects on the optimum design and ...

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International Conference on Infrared and Millimeter Waves

作者： V. P. Kesan D. P. Neikirk T. D. Linton P. A. Blakey B. G. Streetman Microelectronics Research Center and Electronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 Microelectronics and Computer Technology Corporation (MCC) 3500 W. Balcones Center Drive Austin Texas 78759

ISBN: (纸本)9781728120393

Due to the inherently fast transport associated with tunneling, resonant tunneling diodes have been proposed for use in extremely high frequency oscillators. Transit time effects in these oscillators should be considered and can be exploited to improve their rf performance, as in a quantum well injection transit time (QWITT) diode. Small and large signal analyses of these transit time effects are presented, and their implications on the optimum design and maximum possible oscillation frequency of quantum well oscillators is discussed.

关键词： Resonant frequency Oscillators Quantum wells Tunneling Cutoff frequency Quantum capacitance Resistance

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