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Corrigendum to “Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles” [Solar Energy 120 (2015) 257–262]

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Solar Energy 2017年 153卷 783-783页

作者： Kazi Islam Farsad Imtiaz Chowdhury Ali Kemal Okyay Ammar Nayfeh Masdar Institute of Science and Technology Institute Center for Microsystems – iMicro Department of Electrical Engineering and Computer Science (EECS) PO Box 54224 Abu Dhabi United Arab Emirates UNAM-National Nanotechnology Research Center Bilkent University 06800 Ankara Turkey Institute of Materials Science and Nanotechnology Bilkent University 06800 Ankara Turkey Department of Electrical and Electronics Engineering Bilkent University 06800 Ankara Turkey

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Corrigendum to “Enhanced performance of thin-film amorphous silicon solar cells with a top film of 2.85 nm silicon nanoparticles” [Solar Energy 125 (2016) 332–338]

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Solar Energy 2017年 153卷 784-784页

作者： Farsad Imtiaz Chowdhury Aaesha Alnuaimi Nazek E-Atab Munir Nayfeh Ammar Nayfeh Institute Center for Microsystems (iMicro) Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology PO Box 54224 Abu Dhabi United Arab Emirates Department of Physics University of Illinois at Urbana-Champaign 1110 W. Green Street Urbana IL 61801 United States

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Highly uniform carbon nanotube nanomesh network transistors

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Nano Research 2015年第4期8卷 1320-1326页

作者： Sung-Jin Choi Patrick Bennett Dongil Lee Jeffrey Bokor School of Electrical Engineering Kookmin University Seoul 136-702 Republic of Korea Department of Electrical Engineering and Computer Sciences University of California Berkeley CA 94720 USA Applied Science & Technology University of California Berkeley CA 94720 USA Department of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon 305-701 Republic of Korea Materials Sciences Division Lawrence Berkeley National Laboratories CA 94720 USA

A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.

关键词： carbon nanotube network thin-film transistor nanomesh solution process highly uniform

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Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates

Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / ...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Yung-Ching Chu Chao-An Jong Yen-Teng Ho Ming Zhang Po-Yen Chien Hung-Ru Hsu Hung-Yi Chen Yung-Yi Tu Krishna P. Pande Jason C.S. Woo Edward Yi Chang Department of Materials Science and Engineering National Chiao Tung University Hsinchu Taiwan National Nano Device Laboratories National Applied Research Laboratories Hsinchu Taiwan Department of Electrical Engineering University of California Los Angeles USA Green Energy and Environment Research Laboratories Industrial Technology Research Institute Hsinchu Taiwan National Chiao Tung University Hsinchu TW Department of Electrical and Computer Engineering National Chiao Tung University Hsinchu Taiwan

ISBN: (纸本)9781509007271

Scalable synthesis of thin tungsten diselenide (WSe 2 ) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO 2 ) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe 2 layers. Raman spectroscopy confirms high quality crystal of WSe 2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 × 10 2 .

关键词： Silicon Films Substrates

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A single magnetic nanocomposite cilia force sensor

A single magnetic nanocomposite cilia force sensor

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IEEE Sensors Applications Symposium, SAS

作者： Ahmed Alfadhel Mohammed Asadullah Khan Susana Cardoso Jürgen Kosel Computer Electrical and Mathematical Sciences and Engineering Division (CEMSE) King Abdullah University of Science and Technology (KAUST) Thuwal Saudi Arabia Physics Department Universidade de Lisboa Lisbon Portugal INESC-Microsystems and Nano Technologies (INESC-MN) Lisbon Portugal

The advancements in fields like robotics and medicine continuously require improvements of sensor devices and more engagement of cooperative sensing technologies. For example, instruments such as tweezers with sensitive force sensory heads could provide the ability to sense a variety of physical quantities in real time, such as the amount and direction of the force applied or the texture of the gripped object. Force sensors with such abilities could be great solutions toward the development of smart surgical tools. In this work, a unique force sensor that can be integrated at the tips of robotic arms or surgical tools is reported. The force sensor consists of a single bioinspired, permanent magnetic and highly elastic nanocomposite cilia integrated on a magnetic field sensing element. The nanocomposite is prepared from permanent magnetic nanowires incorporated into the highly elastic polydimethylsiloxane. We demonstrate the potential of this concept by performing several experiments to show the performance of the force sensor. The developed sensor element has a 200 μm in diameter single cilium with 1:5 aspect ratio and shows a detection range up to 1 mN with a sensitivity of 1.6 Ω/mN and a resolution of 31 μN. The simple fabrication process of the sensor allows easy optimization of the sensor performance to meet the needs of different applications.

关键词： Robot sensing systems Perpendicular magnetic anisotropy Magnetic fields Force sensors Substrates

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Rebooting computing developing a roadmap for the future of the computer industry

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Mondo Digitale 2016年第66期15卷

作者： Conte, Thomas M. DeBenedictis, Erik Gargini, Paolo A. Kadin, Alan Track, Elie K. Schools of Computer Science and Electrical and Computer Engineering Georgia Tech. United States United States Non-Conventional Computing Technologies Department Sandia National Laboratories United States Princeton Junction NJ United States Developing Novel Photovoltaic Technology for Solar Power Based StamfordCT United States

The 50-year reign of Moore's Law, with its exponential increase in integrated circuit density, has created the computer revolution. Is device scaling coming to an end, and will this lead to the end of the revolution' On the contrary, we suggest that the next decade will see a "rebooting" of the entire computing industry, by redesigning computer hardware and software from top to bottom. This will enable continued exponential growth of computing capabilities, keeping the computer revolution alive and well. We describe preliminary efforts along these lines, focusing on the "IEEE Rebooting Computing Initiative" (RCI) and the "International Roadmap for Devices and Systems" (IRDS).

关键词： Supercomputers

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Construction of KAGRA: An underground gravitational wave observatory

arXiv

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arXiv 2017年

作者： Akutsu, T. Ando, M. Araki, S. Araya, A. Arima, T. Aritomi, N. Asada, H. Aso, Y. Atsuta, S. Awai, K. Baiotti, L. Barton, M.A. Chen, D. Cho, K. Craig, K. DeSalvo, R. Doi, K. Eda, K. Enomoto, Y. Flaminio, R. Fujibayashi, S. Fujii, Y. Fujimoto, M.-K. Fukushima, M. Furuhata, T. Hagiwara, A. Haino, S. Harita, S. Hasegawa, K. Hasegawa, M. Hashino, K. Hayama, K. Hirata, N. Hirose, E. Ikenoue, B. Inoue, Y. Ioka, K. Ishizaki, H. Itoh, Y. Jia, D. Kagawa, T. Kaji, T. Kajita, T. Kakizaki, M. Kakuhata, H. Kamiizumi, M. Kanbara, S. Kanda, N. Kanemura, S. Kaneyama, M. Kasuya, J. Kataoka, Y. Kawaguchi, K. Kawai, N. Kawamura, S. Kawazoe, F. Kim, C. Kim, J. Kim, J.C. Kim, W. Kimura, N. Kitaoka, Y. Kobayashi, K. Kojima, Y. Kokeyama, K. Komori, K. Kotake, K. Kubo, K. Kumar, R. Kume, T. Kuroda, K. Kuwahara, Y. Lee, H.-K. Lee, H.-W. Lin, C.-Y. Liu, Y. Majorana, E. Mano, S. Marchio, M. Matsui, T. Matsumoto, N. Matsushima, F. Michimura, Y. Mio, N. Miyakawa, O. Miyake, K. Miyamoto, A. Miyamoto, T. Miyo, K. Miyoki, S. Morii, W. Morisaki, S. Moriwaki, Y. Muraki, Y. Murakoshi, M. Musha, M. Nagano, K. Nagano, S. Nakamura, K. Nakamura, T. Nakano, H. Nakano, M. Nakano, M. Nakao, H. Nakao, K. Narikawa, T. Ni, W.-T. Nonomura, T. Obuchi, Y. Oh, J.J. Oh, S.-H. Ohashi, M. Ohishi, N. Ohkawa, M. Ohmae, N. Okino, K. Okutomi, K. Ono, K. Ono, Y. Oohara, K. Ota, S. Park, J. Peña Arellano, F.E. Pinto, I.M. Principe, M. Sago, N. Saijo, M. Saito, T. Saito, Y. Saitou, S. Sakai, K. Sakakibara, Y. Sasaki, Y. Sato, S. Sato, T. Sato, Y. Sekiguchi, T. Sekiguchi, Y. Shibata, M. Shiga, K. Shikano, Y. Shimoda, T. Shinkai, H. Shoda, A. Someya, N. Somiya, K. Son, E.J. Starecki, T. Suemasa, A. Sugimoto, Y. Susa, Y. Suwabe, H. Suzuki, T. Tachibana, Y. Tagoshi, H. Takada, S. Takahashi, H. Takahashi, R. Takamori, A. Takeda, H. Tanaka, H. Tanaka, K. Tanaka, T. Tatsumi, D. National Astronomical Observatory of Japan Tokyo181-8588 Japan Graduate School of Science University of Tokyo Tokyo113-0033 Japan Department of Physics Graduate School of Science University of Tokyo Tokyo113-0033 Japan Ibaraki305-0801 Japan Earthquake Research Institute University of Tokyo Tokyo113-0032 Japan Department of Physics Graduate School of Science Osaka City University Osaka558-8585 Japan Graduate School of Science and Technology Hirosaki University Aomori036-8561 Japan Department of Physics Graduate School of Science and Engineering Tokyo Institute of Technology Tokyo152-8551 Japan Institute for Cosmic Ray Research University of Tokyo Chiba277-8582 Japan Institute for Cosmic Ray Research University of Tokyo Gifu506-1205 Japan Graduate School of Science Osaka University Osaka560-0043 Japan Department of Physics Sogang University Seoul121-742 Korea Republic of University of Sannio at Benevento BeneventoI-82100 Italy Sezione di Napoli NapoliI-80126 Italy University of Toyama Toyama930-8555 Japan Department of Physics Graduate School of Science Kyoto University Kyoto606-8502 Japan Institute of Physics Academia Sinica Taipei11529 Taiwan University of Toyama Toyama930-8555 Japan Yukawa Institute for Theoretical Physics Kyoto University Kyoto606-8502 Japan Albert-Einstein-Institut Max-Planck-Institut für Gravitationsphysik HannoverD-30167 Germany Department of Physics and Astronomy Seoul National University Seoul151-742 Korea Republic of Daejeon34055 Korea Republic of Department of Physics Myongji University Yongin449-728 Korea Republic of Department of Computer Simulation Inje University Gimhae-shi50834 Korea Republic of Daejeon34047 Korea Republic of Department of Physical Science Graduate School of Science Hiroshima University Hiroshima903-0213 Japan Department of Applied Physics Graduate School of Science Fukuoka University Fukuoka814-0180 Japan Graduate School of Science and Engineer

Major construction and initial-phase operation of a second-generation gravitational-wave detector KAGRA has been completed. The entire 3-km detector is installed underground in a mine in order to be isolated from background seismic vibrations on the surface. This allows us to achieve a good sensitivity at low frequencies and high stability of the detector. Bare-bones equipment for the interferometer operation has been installed and the first test run was accomplished in March and April of 2016 with a rather simple configuration. The initial configuration of KAGRA is named iKAGRA. In this paper, we summarize the construction of KAGRA, including the study of the advantages and challenges of building an underground detector and the operation of the iKAGRA interferometer together with the geophysics interferometer that has been constructed in the same tunnel. Copyright © 2017, The Authors. All rights reserved.

关键词： Interferometers

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26th Annual Computational Neuroscience Meeting (CNS*2017) of the Organization for Computational Neuroscience Antwerp, Belgium, July 15-20, 2017

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BMC NEUROscience 2017年第SUPPL 1期18卷 59-59页

作者： [Anonymous] Indiana University Purdue University Indianapolis Indianapolis IN 46032 USA Stark Neurosciences Research Institute Indiana University School of Medicine Indianapolis IN 46032 USA Department of Mathematics East Carolina University Greenville NC 27858 USA Jülich Supercomputing Centre Forschungszentrum Jülich 52425 Jülich Germany Future Systems Swiss National Supercomputing Centre 8092 Zurich Switzerland User Engagement and Support Swiss National Supercomputing Centre 6900 Lugano Switzerland Institut de Neurosciences des Systèmes Aix Marseille Univ 13005 Marseille France Simulation Lab Neuroscience Forschungszentrum Jülich Jülich Germany Department of Experimental Psychology Ghent University 9000 Ghent Belgium Donders Center for Cognitive Neuroimaging Radboud University 6525HR Nijmegen The Netherlands Department of Electrical Computer and Energy Engineering University of Colorado Boulder CO 80309 USA Department of Neurosurgery Johns Hopkins School of Medicine Baltimore MD 21287 USA Department of Neurology Johns Hopkins School of Medicine Baltimore MD 21287 USA Department of Otolaryngology Johns Hopkins School of Medicine Baltimore MD 21287 USA INSERM U968 Paris France Sorbonne Universités UPMC University Paris 06 UMR_S 968 Institut de la Vision Paris France CNRS UMR_7210 Paris France Department of Computer Architecture and Technology University of Granada (CITIC) Granada Spain Sorbonne Universités UPMC Univ Paris 06 INSERM CNRS Institut de la Vision Paris France Department of Adaptive Machine Systems Osaka University Osaka Japan Department of Computer Science University of Cergy-Pontoise Cergy-Pontoise France Department of Physics and Astronomy College of Charleston Charleston SC 29424 USA School of Physics Faculty of Science University of Sydney Sydney NSW 2006 Australia Center of Excellence for Integrative Brain Function Australian Research Council Sydney Australia Max Planck Institute for Human Cognitive and Brain Sciences Saxony Lei

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Carotid Arterial Blood Pressure Waveform Monitoring Using a Portable Ultrasound System

Carotid Arterial Blood Pressure Waveform Monitoring Using a ...

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Annual International Conference of the IEEE engineering in Medicine and Biology Society

作者： Joohyun Seo Sabino J. Pietrangelo Hae-Seung Lee Charles G. Sodini the Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA

ISBN: (纸本)9781424492695

This work presents a non-invasive arterial blood pressure (ABP) waveform monitoring technique using ultrasound. A portable ultrasound system to excite ultrasound transducers and acquire data is designed with off-the-shelf components. The insonation angles are identified using a vector Doppler technique based on the cosine dependency of the Doppler signals. The pulse pressure of an estimated waveform at the left common carotid artery is compared to the standard sphygmomanometer measurement in a clinical test. The estimated carotid ABP waveform shows excellent agreement to the finger ABP waveform with expected discrepancy of the systolic peak shape due to different measurement sites. The proposed method also tracks slow blood pressure fluctuations. This validation on human subjects shows potential for a noninvasive blood pressure waveform monitoring device at central arterial sites.

关键词： cosine dependency systolic peak shape a noninvasive blood Left Common Carotid Artery Pulse Pressure waveforms Blood Pressure ABP Doppler effect human subject blood pressure fluctuation Ultrasonic Waves Arterial Pressure

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1-µm InAs quantum dot micro-disk lasers directly grown on exact (001) Si

1-µm InAs quantum dot micro-disk lasers directly grown on e...

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IEEE International Semiconductor Laser Conference

作者： Kei May Lau Yating Wan Qiang Li Alan Y. Liu Weng W Chow Arthur C. Gossard John E. Bowers Evelyn L. Hu Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong Materials Department University of California Santa Barbara Santa Barbara California USA Sandia National Laboratories Albuquerque NM USA Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara California USA School of Engineering and Applied Sciences Harvard University Cambridge MA USA

Capitalizing on our novel epitaxial processes, we demonstrate subwavelength micro-disk lasers as small as 1 μm in diameter on exact (001) silicon substrates. Under continuous wave optical pumping at 10 K, low thresho... 详细信息

ISBN: (纸本)9781509024513

关键词： Quantum dot lasers Silicon Vertical cavity surface emitting lasers Pump lasers Substrates Laser modes

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