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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Alex Andrew Patterson Akintunde Ibitayo Akinwande Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge Massachusetts

The elementary framework for cold field emission is updated to treat emission from non-planar emitting surfaces of quantum-confined field electron emitters. The framework is applied to emission from the curved surface of a cylindrical nanowire, which results in an oscillatory emitted current density (ECD) that approaches the Fowler-Nordheim (FN) ECD in the limit of large emitter radius. As a function of the emitter dimensions, the ECD from the cylindrical nanowire has higher, narrower peaks than planar emitters, and secondary oscillations, from the irregular distribution of energy levels.

关键词： Surface waves Geometry Mathematical model Equations Current density Wave functions Vectors

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MIT virtual source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs

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Physica Status Solidi (C) Current Topics in Solid State Physics 2014年第3-4期11卷 848-852页

作者： Radhakrishna, Ujwal Imada, Tadahiro Palacios, Tomás Antoniadis, Dimitri Department of Computer Science and Electrical Engineering Massachusetts Institute of Technology Cambridge 02139 United States Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya Atsugi City 243-0197 Japan

A new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE-TED 56(8), 1674 (2009) [1]) and is extended to drift diffusion regime. The model is fully scalable from non-velocity saturation to velocity saturation regime. In addition, non-linear access regions are modeled as implicit-gated transistors. Self-heating effects and self-consistent charge models are included. The model is validated against state of the art industry devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Gallium nitride

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Abstracts and Workshops 7th National Spinal Cord Injury Conference November 9-11, 2017 Fallsview Casino Resort Niagara Falls, Ontario, Canada Abstracts

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JOURNAL OF SPINAL CORD MEDICINE 2017年第6期40卷 813-869页

作者： [Anonymous] a NET Team Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. fo Neural Engineering and Therapeutic Team Lyndhurst Centre Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. c Rick Hansen Institute Vancouver BC Canada. ev Rick Hansen Institute Vancouver BC Canada. fc Stan Cassidy Hospital University of New Brunswick Fredericton NB Canada. fd Dalhousie University Halifax NS Canada. e University of Saskatchewan Saskatoon SK Canada. aa University of Calgary Calgary AB Canada. y Dalhousie University Halifax NS Canada. fa Health Sciences Centre Winnipeg MB Canada. fb University of Manitoba Winnipeg MB Canada. h University of Alberta Edmonton AB Canada. i Universite Laval Quebe c City QC Canada. bd Rick Hansen Institute Vancouver BC Canada. fz Clinician Investigator Lyndhurst Centre Toronto Rehabilitation Institute University Health Network and Assistant Professor Department of Medicine Division of Physical Medicine and Rehabilitation University of Toronto. v University of Toront o Toronto ON Canada. n Institute of Biomaterials and Biomedical Engineering University of Toronto Toronto ON Canada. o Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. ga Clinical Scientist Lyndhurst Centre Toronto Rehabilitation Institute University Health Network and Assistant Professor Department of Physical Therapy University of Toronto. dx Department of Electrical and Computer Engineering University of Toronto Toronto ON Canada. fm Lawson Health Research Institute London ON Canada. r Parkwood Institute London ON Canada. bi Parkwood Institute London ON Canada. s University of British Columbia Vancouver BC Canada. t Simon Fraser University Burnaby BC Canada. u DeltaQuest Foundation Concord MA USA. z Institut national d'excellence en santé et en services sociaux (INESSS) Quebec City QC Ca

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Theoretical Efficiency Limits of a 2 Terminal Dual Junction Step Cell

Theoretical Efficiency Limits of a 2 Terminal Dual Junction ...

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IEEE Photovoltaic Specialist Conference

作者： Sabina Abdul Hadi Tim Milakovich Mayank Bulsara Evelina Polyzoeva Eugene A. Fitzgerald Judy L. Hoyt Ammar Nayfeh Institute Center for Future Energy Systems (iFES) Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology P.O. Box 54224 Abu Dhabi UAE MIT Microsystems Technology Laboratories Cambridge MA 02139 USA

ISBN: (纸本)9781479979455

In this paper we present theoretical analysis for upper efficiency limit of a novel 2 terminal dual junction step-cell. Results show that step cell design relaxes bandgap requirements for efficient tandem cell. While conventional tandem cell with optimized bandgap combination (1.64/ 0.96 eV) has the highest efficiency (45.78 %), the step-cell design provides significant efficiency improvement for cells with non-optimized bandgap values. Efficiency upper limit for Si based step-cell with top cell bandgap equal to 1.41 eV (~GaAs), efficiency upper limit increases from~21% in conventional tandem cell to 38.7% for optimized step-cell design. Step-cell design provides opportunity for wider selection of materials used in tandem solar cell applications.

关键词： Multijunction solar cells theoretical efficiency limit detailed balance method step-cell silicon

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High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

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Nano Research 2014年第7期7卷 998-1006页

作者： Mark Triplett Hideki Nishimura Matthew Ombaba V. J. Logeeswarren Matthew Yee Kazim G. Polat Jin Y. Oh Takashi Fuyuki Francois Leonard M. Saif Islam Center for Nano and Micro Manufacturing and Department of Electrical and Computer Engineering University of California Davis CA 95616 USA Department of Physics University of California Davis CA 95515 USA Sandia National Laboratories Livermore CA 94551 USA Microelectronic Device Science Laboratory Nara Institute of Science and Technology Japan

Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.

关键词： transfer printing nanowires flexible electronics printable electronics nanoscale devices

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MOS Memory with Double-Layer High-κTunnel Oxide Al_2O_3/HfO_2 and ZnO Charge Trapping Layer

MOS Memory with Double-Layer High-κTunnel Oxide Al_2O_3/HfO...

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IEEE International Conference on Nanotechnology

作者： Nazek El-Atab Ammar Nayfeh Berk Berkan Turgut Ali K. Okyay Institute Center for Microsystems - iMicro Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology Abu Dhabi United Arab Emirates UNAM-Institute of Materials Science and Nanotechnology

ISBN: (纸本)9781467381574

In this work, the effect of using a double layer of high-κ tunnel oxides Al_2O_3/HfO_2 instead of a single layer Al_2O_3, in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (V_t) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

关键词： Charge trapping memory ZnO Al_2O_3 HfO_2 atomic layer deposition MOS retention time

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Heisenberg scaling with weak measurement: a quantum state discrimination point of view

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Quantum Studies: Mathematics and Foundations 2015年第1期2卷 5-15页

作者： Jordan, Andrew N. Tollaksen, Jeff Troupe, James E. Dressel, Justin Aharonov, Yakir Center for Coherence and Quantum Optics Department of Physics and Astronomy University of Rochester Rochester 14627 NY United States Institute for Quantum Studies Chapman University 1 University Drive Orange 92866 CA United States Schmid College for Science and Technology Chapman University 1 University Drive Orange 92866 CA United States Applied Research Laboratories The University of Texas at Austin P.O. Box 8029 Austin 78713-8029 TX United States Department of Electrical and Computer Engineering University of California Riverside 92521 CA United States School of Physics and Astronomy Tel Aviv University Tel Aviv Israel

We examine the results of the paper “Precision metrology using weak measurements” (Zhang et al. arXiv:1310.5302, 2013) from a quantum state discrimination point of view. The Heisenberg scaling of the photon number for the precision of the interaction parameter between coherent light and a spin one-half particle (or pseudo-spin) has a simple interpretation in terms of the interaction rotating the quantum state to an orthogonal one. To achieve this scaling, the information must be extracted from the spin rather than from the coherent state of light, limiting the applications of the method to phenomena such as cross-phase modulation. We next investigate the effect of dephasing noise and show a rapid degradation of precision, in agreement with general results in the literature concerning Heisenberg scaling metrology. We also demonstrate that a von Neumann-type measurement interaction can display a similar effect with no system/meter entanglement. © 2015, Chapman University.

关键词： Quantum metrology State discrimination Weak value amplification

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Sub-60mV-swing negative-capacitance FinFET without hysteresis

Sub-60mV-swing negative-capacitance FinFET without hysteresi...

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International Electron Devices Meeting (IEDM)

作者： Kai-Shin Li Pin-Guang Chen Tung-Yan Lai Chang-Hsien Lin Cheng-Chih Cheng Chun-Chi Chen Yun-Jie Wei Yun-Fang Hou Ming-Han Liao Min-Hung Lee Min-Cheng Chen Jia-Min Sheih Wen-Kuan Yeh Fu-Liang Yang Sayeef Salahuddin Chenming Hu National Nano Device Laboratories National Applied Research Laboratories Hsinchu Taiwan Institute of Elecro-Optical Science and Technology National Taiwan Normal University Taipei Taiwan Department of Mechanical Engineering National Taiwan University Taipei Taiwan Research Center for Applied Sci. Academia Sinica Taipei Taiwan Dept. of Electrical Eng. and Computer Science University of California Berkeley USA

In this work, we report the first Negative-Capacitance FinFET. ALD Hf 042 Zr 058 O 2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). I ON increased by >25% for the I OFF . For the first time, we demonstrate that raising HfZrO 2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

关键词： Logic gates FinFETs Annealing Voltage measurement Temperature measurement Hysteresis CMOS integrated circuits

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26th Annual Computational Neuroscience Meeting (CNS*2017): Part 1

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BMC Neurosci 2017年第SUPPL 1期18卷 58-58页

作者： Sue Denham Panayiota Poirazi Erik De Schutter Karl Friston Ho Ka Chan Thomas Nowotny Dongqi Han Sungho Hong Sophie Rosay Tanja Wernle Alessandro Treves Sarah Goethals Romain Brette Tomas Van Pottelbergh Rodolphe Sepulchre Alex D. Bird Hermann Cuntz Pedro J. Gonçalves Jan-Matthis Lueckmann Giacomo Bassetto Marcel Nonnenmacher Jakob H. Macke Audrey J. Sederberg Jason N. MacLean Stephanie E. Palmer Ulisse Ferrari Christophe Gardella Olivier Marre Thierry Mora Emina Ibrahimovic Martin Müller Jean-Pascal Pfister Tushar Chauhan Timothée Masquelier Alexandre Montlibert Benoit R. Cottereau Moritz Helias Jannis Schuecker David Dahmen Sven Goedeke Alexandre Hyafil Ainhoa Hermoso-Mendizabal Pavel E. Rueda-Orozco Santiago Jaramillo David Robbe Jaime de la Rocha Marie Rooy Fani Koukouli David DiGregorio Uwe Maskos Boris Gutkin Andrey Yu Verisokin Darya V. Verveyko Dmitry E. Postnov Willy Wong Omid Talakoub Robert Chen Milos Popovic Dmitriy Lisitsyn Eric Drebitz Iris Grothe Sunita Mandon Andreas Kreiter Udo Ernst Peter A. Robinson Xuelong Zhao Kevin M. Aquino John D. Griffiths Grishma Mehta-Pandejee Natasha Gabay James MacLaurin Somwrita Sarkar Tim Kunze Jens Haueisen Thomas R. Knösche Subutai Ahmad Yuwei Cui Marcus Lewis Jeff Hawkins Simona Olmi Spase Petkoski Fabrice Bartolomei Maxime Guye Viktor Jirsa Hazem Toutounji Daniel Durstewitz Matteo Cantarelli Adrian Quintana Boris Marin Matt Earnshaw Padraig Gleeson Robert Court Robert McDougal R. Angus Silver Salvador Dura-Bernal Stephen Larson William W. Lytton Giovanni Idili Lorenzo Posani Simona Cocco Karel Ježek Rémi Monasson School of Psychology Faculty of Health & Human Sciences Plymouth University Plymouth Devon PL4 8AA UK Institute of Molecular Biology and Biotechnology (IMBB) Foundation for Research and Technology-Hellas (FORTH) Heraklion Crete Greece Okinawa Institute of Science and Technology Graduate University Okinawa Japan Wellcome Trust Centre for Neuroimaging Institute of Neurology UCL London WC1N 3BG UK School of Engineering and Informatics University of Sussex Brighton BN1 9QJ UK Graduate School Okinawa Institute of Science and Technology Okinawa 904-0495 Japan Computational Neuroscience Unit Okinawa Institute of Science and Technology Okinawa 904-0495 Japan Cognitive Neuroscience Area Scuola Internazionale Superiore di Studi Avanzati Trieste 34136 Italy Kavli Institute for Systems Neuroscience NTNU Trondheim 7030 Norway Institut de la Vision Sorbonne Universités UPMC Univ Paris 06 INSERM CNRS Paris 75012 France Department of Engineering University of Cambridge Cambridge Cambridgeshire CB2 1PZ UK Ernst Strüngmann Institute for Neuroscience Max Planck Society Frankfurt Germany Frankfurt Institute for Advanced Studies Frankfurt Germany Neural Systems Analysis Research Center Caesar An Associate of the Max Planck Society Bonn Germany Max Planck Institute for Biological Cybernetics Tübingen Germany Bernstein Center for Computational Neuroscience Tübingen Germany Present Address: Biomedical Engineering Department Georgia Institute of Technology Atlanta GA 30306 USA Department of Neurobiology University of Chicago Chicago IL 60637 USA Department of Organismal Biology and Anatomy University of Chicago Chicago IL 60637 USA Committee on Computational Neuroscience University of Chicago Chicago IL 60637 USA Institut de la Vision Sorbonne Universités INSERM Paris France Laboratoire de Physique Statistique Ecole Normale Supérieure Paris France Institute of Molecular Life Sciences University of Zürich 8057 Zürich Switzerland Institute of Neuroinformatics Univer

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Frontiers in Optics 2015, FIO 2015

作者： Kues, Michael Reimer, Christian Wetzel, Benjamin Roztocki, Piotr Caspani, Lucia Grazioso, Fabio Bromberg, Yaron Little, Brent E. Munro, William J. Chu, Sai T. Moss, David J. Morandotti, Roberto INRS-EMT 1650 Boulevard Lionel-Boulet VarennesQCJ3X 1S2 Canada School of Engineering and Physical Sciences Heriot-Watt University EdinburghEH14 4AS United Kingdom Department of Applied Physics Yale University New HavenCT06520 United States Xi'an Institute of Optics and Precision Mechanics of CAS Xi'an China NTT Basic Research Laboratories NTT Corporation 3-1 Morinosato-Wakamiya Atsugi Kanagawa243-0198 Japan Department of Physics and Material Science City University of Hong Kong Tat Chee Avenue Hong Kong Hong Kong School of Electrical and Computer Engineering RMIT University MelbourneVIC3001 Australia Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu610054 China

By superimposing two different spontaneous four-wave mixing processes inside a bimodally pumped CMOS-compatible mircoring resonator, we report the generation of four-mode two-photon multi-correlated states and measure... 详细信息

ISBN: (纸本)9781943580033

关键词： Photons

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