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2005 materials Research Society Spring Meeting

作者： Anjum, Dalaver H. Li, Jian Xia, Guangrui Hoyt, Judy L. Hull, Robert Department of Materials Science and Engineering University of Virginia 116 Engineer's Way Charlottesville VA 22904 United States Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 United States Burnham Institute 10901 North Torrey Pines Road San Diego CA 92037 United States

Strained-Si based Field Effect Transistors (FETs) have enabled improvement of carrier transport in Metal Oxide Semiconductor (MOS)-based devices, both in the ON state of the device and in the sub-threshold region. This leads to devices with higher ratios of on-to-off current, improvements in the device sub-threshold slope, lower voltage operation, and carrier mobility enhancement. However, in order to understand the fundamental physics of these devices, it is important to address the stress conditions of the strained-Si channel layers after device processing, particularly after the ion-implantation process. In this work, we have studied Si+ self ion-implantation and thermally annealed strained-Si channel layers in n-MOSFETs. It has been observed that the density of defects in the strained-Si layer depends upon implant dose as well as thermal treatment. Using energy dispersive spectroscopy (EDS) spectra, it is found that Ge is present in the strained Si layer when analyzed after Si + implantation and rapid thermal annealing. The presence of Ge in the strained Si channel layer causes relaxation of strain. This is verified by Convergent Beam Electron Diffraction (CBED) by measuring the lattice constant of the strained channel. It is concluded that electron mobility enhancements can be degraded in n-MOSFETs due to presence of both Ge up-diffusion and defects. © 2005 Materials Research Society.

关键词： Semiconducting silicon

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A BiCMOS ultra-wideband 3.1-10.6GHz front-end

A BiCMOS ultra-wideband 3.1-10.6GHz front-end

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Custom Integrated Circuits Conference (CICC)

作者： F.S. Lee A.P. Chandrakasan Department of Electrical Engineering and Computer Science M. I. T. MicroSystems Technology Laboratories Cambridge MA USA

A direct-conversion receiver for 500MHz-wide FCC-compliant UWB pulses in the 3.1-10.6GHz licensed band is fabricated using 0.18/spl mu/m SiGe BiCMOS. The packaged chip consists of a wideband LNA, filter, phase-splitter, 802.11a switchable notch filter, 3.1-10.6GHz LO amplifiers, mixers, and baseband channel-select filters/buffers. The average conversion gain, NF and input P1dB are 32dB, 4dB, and -41dBm respectively. The chip draws 30mA from 1.8V. Wireless testing of the receiver at 100Mbps reveals a 2.7/spl times/10/sup -3/ bit-error-rate at -81dBm sensitivity.

关键词： BiCMOS integrated circuits Ultra wideband technology Filters Pulse amplifiers Silicon germanium Germanium silicon alloys Packaging Broadband amplifiers Baseband Noise measurement

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Carrier transport in one-dimensional Ge Nanowires/Si substrate heterojunctions

Carrier transport in one-dimensional Ge Nanowires/Si substra...

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2004 MRS Fall Meeting

作者： Lee, Eun-Kyu Kamenev, Boris V. Forsh, Pavel A. Kamins, Ted I. Tsybeskov, Leonid Electrical and Computer Engineering New Jersey Institute of Technology Newark NJ Physics Department Moscow State University Moscow Russia Quantum Science Research Hewlett-Packard Laboratories Palo Alto CA

Samples of Ge Nanowires (Ge NWs) grown by chemical vapor deposition (CVD) on single crystal, (100) and (111) oriented Si substrates were studied with respect to their electrical properties. Using different contact geometries, direct current (DC) and alternating current (AC) electrical and photoelectrical measurements were carried out at room temperature. A rectifying junction behavior was observed indicating a low defect density at NWs/substrate heterointerface. AC conductance exhibits significant frequency dependence with a power law behavior, suggesting that carrier transport in Ge NW volume is associated with hopping processes. © 2005 Materials Research Society.

关键词： Nanostructured materials

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Comparison of copper disc and copper wafer polishing processes in terms of their kinetic, tribological, and thermal characteristics

Comparison of copper disc and copper wafer polishing process...

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作者： Li, Zhonglin Lefevre, Paul Koshiyama, Isamu Ina, Katsuyoshi Boning, Duane Philipossian, Ara Department of Chemical and Environmental Engineering University of Arizona Tucson AZ 85721 United States Fujimi Corporation Tualatin OR 97070 United States Fujimi Incorporated Kagamigahara Gifu 509-0108 Japan Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA 02139 United States Fujimi Corporation Tualatin OR Materials Research Society Fujimi Incorporated Japan Department of Electrical Engineering and Computer Science MIT Cambridge Department of Chemical Engineering University of Arizona Tucson

Coefficients of friction, removal rate, and pad temperature analysis were used to compare chemical-mechanical polishing processes involving two substrates, copper discs and copper-deposited wafers with different grain sizes and degrees of flatness (i.e., concave or convex). The average coefficient of friction and the total mechanical energy of the processes (as measured by the spectral attributes of the raw frictional force) were higher for the copper-deposited wafers. This result is believed to be due to differences in the extent of convexity of the two types of substrates and the shapes of their bevels. Pad temperature transients as well as material removal rates were also slightly higher for the copper wafers, suggesting a thermally dependent removal mechanism. Grain sizes associated with the copper-deposited wafers used in this paper were larger compared to those of the copper discs. Grains are thought to have complex interactions with the chemical as well as mechanical attributes of the process, based on the fact that smaller grains led to greater chemical reaction rates, while they needed more mechanical force to abrade away. Based on these results, careful attention to copper grain size as well as deposited film and wafer geometry is recommended in experimental studies of copper polishing. © 2005 IEEE.

关键词： Copper

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Advances in terahertz quantum-cascade lasers using metalmetal waveguides

Advances in terahertz quantum-cascade lasers using metalmeta...

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Optical Terahertz science and technology, OTST 2005

作者： Williams, Benjamin S. Kumar, Sushil Callebaut, Hans Kohen, Stephen Hu, Qing Reno, John L. Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 United States Sandia National Laboratories Dept 1123 MS 0601 Albuquerque NM 87185-0601 United States

We report the progress of terahertz quantum cascade lasers that use resonant-phonon depopulation, including the fabrication of metal-metal waveguides using Cu-Cu thermocompression wafer bonding to extend cw operation ... 详细信息

ISBN: (纸本)1557527865

关键词： Wafer bonding

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InP nanobridges epitaxially formed between two vertical Si surfaces

InP nanobridges epitaxially formed between two vertical Si s...

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2005 5th IEEE Conference on Nanotechnology

作者： Yi, Sung Soo Girolami, G. Amano, Jun Islam, M.S. Kamins, T.I. Sharma, S. Molecular Technology Laboratory Agilent Technologies Palo Alto CA 94304 United States Quantum Science Research Hewlett-Packard Laboratories Palo Alto CA 94304 United States Department of Electrical and Computer Engineering University of California Davis

ISBN: (纸本)0780391993

The heteroepitaxial growth of III-V compound semiconductors on Si would enable the integration of high-performance III-V materials with Si technology. We report the epitaxial growth on (111)-oriented Si surfaces of highly aligned, single-crystalline InP nanowires by chemical vapor deposition catalyzed by Au. We demonstrate laterally oriented InP nanowires bridging between vertical (111) Si surfaces formed by anisotropically etching a (110)-oriented Si substrate. This method of connecting nanowires offers a facile way of integrating III-V nanoelectronic and photonic devices with Si. ©2005 IEEE.

关键词： Nanostructured materials

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Optical Properties of Ge Nanowires Grown on Silicon (100) and (111) Substrates

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MRS Online Proceedings Library 2005年第1期832卷 279-284页

作者： V. Sharma B. V. Kamenev L. Tsybeskov T. I. Kamins Department of Electrical and Computer Engineering New Jersey Institute of Technology Newark USA Quantum Science Research Hewlett-Packard Laboratories Palo Alto USA

In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ~40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ~300 cm−1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW–Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.

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Guest editorial wireless overlay networks based on mobile IPv6

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IEEE Journal on Selected Areas in Communications 2005年第11期23卷 2089-2090页

作者： Chao, Han-Chieh Huang, Nen-Fu Kuo, Sy-Yen Perkins, Charles E. Stuttgen, Heinrich Bux, W. National Ilan University Department of Electronic Engineering I-Lan 260 Taiwan National Tsing Hua University Department of Computer Science Hsin-Chu 300 Taiwan National Taiwan University Department of Electrical Engineering Taipei 106 Taiwan Nokia Research Center Communication Systems Laboratory Mountain View CA 94043 United States NEC Europe Ltd. Network Laboratories Heidelberg D 69115 Heidelberg Germany Department of Electronic Engineering Taiwan Library and Information Technology Office National Ilan University I-Lan Taiwan IPv6 Steering Committee Taiwan Taiwan IPv6 Forum Taiwan Department of Computer Science National Tsing Hua University Taiwan IPv6 Working Group NICI Ipv6 Steering Committee IPv6 Forum Taiwan Department of Electrical Engineering National Taiwan University Taiwan Computer Science and Engineering Department Chinese University of Hong Kong Hong Kong IEEE Computer Society Networking Technology Laboratory Nokia Research Center Mountain View CA United States IEEE Vehicular Technology Conference Networking Track NEC Europe Ltd. Germany NEC's Network Laboratories Heidelberg Germany Board of Governors IEEE Communications Society Japan Department of ComSoc's Switching Routing Technical Committee

No abstract available

关键词： Internet Wireless networks Mobile computing computer networks Land mobile radio cellular systems Access protocols GSM Pervasive computing Mobile communication computer architecture

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An on-chip blood serum separator using self-assembled silica microsphere filter

An on-chip blood serum separator using self-assembled silica...

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： Jungyoup Han Se Hwan Lee Youngmoo Heo Chul Jin Hwang C.H. Ahn Microsystems and BioMEMS Laboratory Department of Electrical and Computer Engineering and Computer Science University of Cincinnati Cincinnati OH USA Korea Institute of Industrial and Technology Incheon South Korea

In this paper, we report a disposable on-chip blood serum separator using self-assembled silica microsphere filter, which can passively separate serum from human blood. A self-assembly packing method was developed for packing silica microspheres through a microfluidic channel on cyclic olefin copolymer (COC) substrate. Using the self-assembled microsphere filter, serum has been successfully separated from diluted human blood. The filters realized in this work are suitable for incorporating into a disposable polymer lab-on-a-chip, which can perform point-of-care testing (POTC) for clinical diagnostics using human blood.

关键词： Blood Particle separators Silicon compounds Filters Humans Self-assembly Microfluidics Polymers Lab-on-a-chip Performance evaluation

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FastSies: a fast stochastic integral equation solver for modeling the rough surface effect

FastSies: a fast stochastic integral equation solver for mod...

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IEEE International Conference on computer-Aided Design

作者： Zhenhai Zhu J. White Cadence Berkeley Laboratories Berkeley CA USA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

In this paper we describe several novel sparsification techniques used in a fast stochastic integral equation solver to compute the mean value and the variance of capacitance of 3D interconnects with random surface roughness. With the combination of these numerical techniques, the computational cost has been reduced from O(N/sup 4/) to O(Nlog/sup 2/(N)), where N is the number of panels used for the discretization of nominal smooth surfaces. Numerical experiments show that the proposed numerical techniques are accurate and efficient.

关键词： Stochastic processes Integral equations Rough surfaces Surface roughness Capacitance Surface resistance Conductors Computational efficiency electrical resistance measurement Monte Carlo methods

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