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IEEE International Conference on Consumer Electronics (ICCE)

作者： Seung Ho Choi Hong Kook Kim Yong Duk Cho Sang Ryong Kim Hwang Soo Lee Human & Computer Interaction Laboratory Samsung Advanced Institute of Technology Gyeonggi South Korea Department of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea AT and T Research Laboratories Florham Park NJ USA Central Research Laboratory SK Telecom Daejeon Gyeonggi South Korea

ISBN: (纸本)0780351231

We present the effect of several standard speech coders on speech recognition in adverse communication environments such as tandem, frame erasure, and noisy conditions. These environments were chosen to simulate the operational condition of IMT-2000. The comparative results can provide a guideline for selecting a speech coder when a speech recognition service is needed in digital communication networks.

关键词： Speech analysis Speech recognition Hidden Markov models Speech synthesis Testing Working environment noise Guidelines Digital communication Degradation Human computer interaction

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On the use of LSF intermodel interlacing property for spectral quantization

On the use of LSF intermodel interlacing property for spectr...

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IEEE Workshop on Speech Coding Proceedings

作者： Mi Suk Lee Hong Kook Kim Seung Ho Choi Hwang Soo Lee Department of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon South Korea AT and T Research Laboratories Florham Park NJ USA Human & Computer Interaction Laboratory Samsung Advanced Institute of Technology Gyeonggi South Korea Central R&D center SK Telecom Daejeon South Korea

The line spectral frequencies (LSFs) extracted from successive analysis orders are interlaced with each other. This intermodel interlacing property gives a new relationship between the closeness of LSFs and their spectral sensitivities, which enables us to propose a weighting function for LSF distortion measurement. By applying the proposed weighting function to an LSF quantizer, we can achieve better performance than when using the conventional heuristic functions. Moreover, the complexity of the proposed weighting function is much lower than that of the optimal weighting function, while their performances are almost the same.

关键词： Quantization Frequency Covariance matrix Distortion measurement Linear predictive coding Euclidean distance Weight measurement Polynomials Reflection Humans

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Preface

Lecture Notes in Computer Science (including subseries Lectu...

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Lecture Notes in computer science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) 1999年 1680卷

作者： Dams, Dennis Gerth, Rob Leue, Stefan Massink, Mieke Eindhoven University of Technology Department of Electrical Engineering Netherlands Eindhoven University of Technology Department of Mathematics and Computer Science Eindhoven Netherlands Intel Microprocessor Products Group Strategic CAD Laboratories 5200 NE Elam Young Parkway JFT-104 HillsboroOR United States University of Waterloo Department of Electrical and Computer Engineering WaterlooON Canada C.N.R.-Ist CNUCE Via Santa Maria 36 Pisa Italy

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Statistical metrology—measurement and modeling of variation for advanced process development and design rule generation

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AIP Conference Proceedings 1998年第1期449卷 395-404页

作者： Duane S. Boning James E. Chung Microsystems Technology Laboratories Dept. of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139

Advanced process technology will require more detailed understanding and tighter control of variation in devices and interconnects. The purpose of statistical metrology is to provide methods to measure and characterize variation, to model systematic and random components of that variation, and to understand the impact of variation on both yield and performance of advanced circuits. Of particular concern are spatial or pattern-dependencies within individual chips; such systematic variation within the chip can have a much larger impact on performance than wafer-level random variation. Statistical metrology methods will play an important role in the creation of design rules for advanced technologies. For example, a key issue in multilayer interconnect is the uniformity of interlevel dielectric (ILD) thickness within the chip. For the case of ILD thickness, we describe phases of statistical metrology development and application to understanding and modeling thickness variation arising from chemical-mechanical polishing (CMP). These phases include screening experiments including design of test structures and test masks to gather electrical or optical data, techniques for statistical decomposition and analysis of the data, and approaches to calibrating empirical and physical variation models. These models can be integrated with circuit CAD tools to evaluate different process integration or design rule strategies. One focus for the generation of interconnect design rules are guidelines for the use of “dummy fill” or “metal fill” to improve the uniformity of underlying metal density and thus improve the uniformity of oxide thickness within the die. Trade-offs that can be evaluated via statistical metrology include the improvements to uniformity possible versus the effect of increased capacitance due to additional metal.

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Retrospective: The J-Machine 98

Retrospective: The J-Machine

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25th International Symposium on computer Architecture, ISCA 1998

作者： Dally, William J. Chang, Andrew Chien, Andrew Fiske, Stuart Horwat, Waldemar Keen, John Lethit, Richard Noakes, Michael Nuth, Peter Spertus, Ellen Wallach, Deborah Wills, D. Scott Computer Systems Laboratory Stanford University United States Department of Computer Science University of Illinois Urbana-Champaign United States Department of Electrical and Computer Engineering Georgia Institute of Technology United States Netscape Communications Equator Technologies Consulting Hewlett Packard Laboratories Department of Computer Science Mills College Dec Western Research Laboratory Silicon Graphics Computer Systems

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Electronic properties of Si/Si1-x-yGexCy heterojunctions

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Journal of Vacuum science & technology B: Microelectronics Processing and Phenomena 1998年第3期16卷 1639-1639页

作者： Stein, B.L. Yu, E.T. Croke, E.T. Hunter, A.T. Laursen, T. Mayer, J.W. Ahn, C.C. Department of Electrical and Computer Engineering University of California San Diego La Jolla California 92093-0407 HRL Laboratories Malibu California 90265 Center for Solid State Science Arizona State University Tempe Arizona 85287-1704 California Institute of Technology Pasadena California 91125

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1−x−yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1−x−yGexCy heterojunctions indicate that incorporation of C into Si1−x−yGexCy lowers both the valence- and conduction-band edges compared to those in Si1−xGex by an average of 107±6 meV/% C and 75±6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1−x−yGexCy and with measurements of conduction band offsets in Si/Si1−yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed.

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A 16 KBIT/S WIDEBAND CELP CODER USING MEL-GENERALIZED CEPSTRAL ANALYSIS AND ITS SUBJECTIVE EVALUATION 5

A 16 KBIT/S WIDEBAND CELP CODER USING MEL-GENERALIZED CEPSTR...

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5th International Conference on Spoken Language Processing, ICSLP 1998

作者： Koishida, Kazuhito Hirabayashi, Gou Tokuda, Keiichi Kobayashi, Takao Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States Interdisciplinary Grad School of Science and Engr. Tokyo Institute of Technology Yokohama226-8502 Japan Kansai Research Laboratories Toshiba Corporation Kobe658-0015 Japan Department of Computer Science Nagoya Institute of Technology Nagoya466-8555 Japan

We have proposed a wideband CELP coder, called MGC-CELP, which provides high quality speech by utilizing mel-generalized cepstral (MGC) analysis instead of linear prediction (LP). In this paper, we investigate the performance of the wideband MGC-CELP coder at 16 kbit/s in terms of short-term predictor order, i.e., order of MGC analysis. Subjective tests show that the MGC-CELP coder with a predictor of order 20 gives better performance than ITU-T G.722 at 64 kbit/s. It is also found that the MGC-CELP coder with 12th order achieves comparable quality to the 64 kbit/s G.722, and outperforms the 16 kbit/s conventional CELP coder using 20th-order LP analysis under the same conditions. © 1998. 5th International Conference on Spoken Language Processing, ICSLP 1998. All rights reserved.

关键词： Quality control

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Exciton localization in InGaN quantum well devices

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Journal of Vacuum science & technology B: Microelectronics Processing and Phenomena 1998年第4期16卷 2204-2204页

作者： Chichibu, Shigefusa Sota, Takayuki Wada, Kazumi Nakamura, Shuji Materials Department University of California Santa Barbara California 93106 Faculty of Science and Technology Science University of Tokyo Noda Chiba 278-8510 Japan Department of Electrical Electronics and Computer Engineering Waseda University Shinjuku Tokyo 169-8555 Japan Compound Semiconductor Materials Research NTT System Electronics Laboratories Atsugi Kanagawa 243-0198 Japan Department of Research and Development Nichia Chemical Industries Limited Kaminaka Anan Tokushima 774-8601 Japan

Emission mechanisms of a device-quality quantum well (QW) structure and bulk three dimensional (3D) InGaN materials grown on sapphire substrates without any epitaxial lateral overgrown GaN base layers were investigated. The InxGa1−xN layers showed various degrees of in-plane spatial potential (band gap) inhomogeneity, which is due to a compositional fluctuation or a few monolayers thickness fluctuation. The degree of fluctuation changed remarkably around a nominal InN molar fraction x=0.2, which changes to nearly 0.08–0.1 for the strained InxGa1−xN. This potential fluctuation induces localized energy states both in the QW and 3D InGaN, showing a large Stokes-like shift. The spontaneous emission from undoped InGaN single QW light-emitting diodes (LEDs), undoped 3D LEDs, and multiple QW (MQW) laser diode (LD) wafers was assigned as being due to the recombination of excitons localized at the potential minima, whose lateral size was determined by cathodoluminescence mapping to vary from less than 60 to 300 nm in QWs. Those structures are referred to as quantum disks (Q disks) or segmented QWs depending on the lateral size. Blueshift of the emission peak by an increase of the driving current was explained to be combined effects of band filling of the localized states by excitons and Coulomb screening of the quantum confined Stark effect induced by the piezoelectric field. The lasing mechanisms of the continuous wave In0.15Ga0.85N MQW LDs having small potential fluctuations can be described by the well-known electron-hole-plasma (EHP) picture. However, the inhomogeneous MQW LDs are considered to lase by EHP in segmented QWs or Q disks. It is desirable to use entire QW planes with small potential inhomogeneity as gain media for higher performance LD operation.

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A mixed nodal-mesh formulation for efficient extraction and passive reduced-order modeling of 3D interconnects

A mixed nodal-mesh formulation for efficient extraction and ...

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Design Automation Conference

作者： N. Marques M. Kamon J. White L.M. Silveira Research Laboratory of Electronics Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA Department of Electrical and Computer Engineering Instituto Superior Técnico INESC/Cadence European Laboratories Lisboa Portugal

As VLSI circuit speeds have increased, reliable chip and system design can no longer be performed without accurate three-dimensional interconnect models. In this paper, we describe an integral equation approach to modeling the impedance of interconnect structures accounting for both the charge accumulation on the surface of conductors and the current traveling in their interior. Our formulation, based on a combination of nodal and mesh analysis, has the required properties to be combined with Model Order Reduction techniques to generate accurate and guaranteed passive low order interconnect models for efficient inclusion in standard circuit simulators. Furthermore, the formulation is shown to be more flexible and efficient than previously reported methods.

关键词： Integrated circuit interconnections Integral equations Conductors Permission laboratories Very large scale integration Mesh generation Capacitance Frequency Acceleration

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Efficient techniques for accurate modeling and simulation of substrate coupling in mixed-signal ICs 98

Efficient techniques for accurate modeling and simulation of...

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Design, Automation and Test in Europe Conference and Exhibition

作者： J.P. Costa M. Chou L.M. Silveira INESC Cadence European Laboratories Department of Electrical and Computer Engineering Instituto Superior Técnico Lisboa Portugal Research Laboratory of Electronics Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

ISBN: (纸本)9780818683596

Industry trends aimed at integrating higher levels of circuit functionality have triggered a proliferation of mixed analog-digital systems. Magnified noise coupling through the common chip substrate has made the design and verification of such systems an increasingly difficult task. In this paper we present a fast eigen-decomposition technique that accelerates operator application in BEM methods and avoids the dense-matrix storage while taking all of the substrate boundary effects into account explicitly. This technique can be used for accurate and efficient modeling of substrate coupling effects in mixed-signal integrated circuits.

关键词： Integrated circuit modeling Computational modeling laboratories electrical capacitance tomography Packaging computer science Analog-digital conversion Hip Acceleration Communication industry

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