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THE IMPACT OF NMOSFET HOT-CARRIER DEGRADATION ON CMOS ANALOG SUBCIRCUIT PERFORMANCE

IEEE JOURNAL OF SOLID-STATE CIRCUITS 1995年第6期30卷 644-649页

作者： CHAN, VH CHUNG, JE Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA

This study presents some of the first experimental data on the impact of NMOSFET hot-carrier-induced degradation on CMOS analog subcircuit performance, Because of circuit design requirements, most NMOSFET's used for analog applications are biased in the saturation region with a low gate-to-source voltage, Under such operating conditions, in addition to interface states, significant numbers of hole traps are also generated inside the gate oxide, Because acceptor-type interface states are mostly unoccupied in the saturation region, hole traps are found to have a much more significant impact on analog NMOSFET device performance, The hot-carrier-induced degradation of analog subcircuit performance is also found to be quite sensitive to the particular circuit design and operating conditions, Circuit performance and reliability tradeoffs are examined.

关键词： Carrier traps gate oxide Electric circuits Operating conditions CIRCUIT DESIGN metal-oxide-semiconductor field effect transistors Experimental data interface states Saturation Zone Hot carriers

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CAD For Microelectromechanical Systems

CAD For Microelectromechanical Systems

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： S.D. Senturia Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA

CAD Systems for microelectromechanical systems (MEMS) require the three-dimensional and multi-energy- domain modeling of mechanical engineering and the planar mask layout and circuit simulation of integrated circuits. Several CAD systems for MEMS are now under development. Challenges include geometric construction from mask and process data, three-dimensional coupled- energy-domain simulation, construction of lumped macro-models, and computer-aided insertion of those macro-models into dynamical simulators. Examples are given based on the MIT MEMCAD system.

关键词： Microelectromechanical systems Solid modeling Micromechanical devices Numerical simulation Context modeling Circuit simulation Computational modeling Transducers Process design Circuit testing

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"Membuilder": An Automated 3D Solid Model Construction Program For Microelectromechanical Structures

"Membuilder": An Automated 3D Solid Model Construction Progr...

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International Conference on Solid State Sensors and Actuators (TRANSDUCERS)

作者： P.M. Osterberg S.D. Senturia Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA

Designers of microelectromechanical structures (MEMS) need to be able to construct, visualize and analyze robust 3D solid models within a single, convenient and integrated CAD design environment. We now report the completion , of our "MemBuilder" software which accornmodates this need within the I-DEAS Master Series CAD environment. MemBuilder automates the process of 3D solid model construction of MEMS structures starting from user defined process data and 2D mask data. Meryffluilder successfully emulates MEMS structure construction in both surface-micromachined and wafer-bonded processes.

关键词： Solid modeling Emulation Micromechanical devices Etching Solid state circuits Actuators Data visualization Performance analysis Hazards Productivity

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Oxide-field dependence of the NMOS hot-carrier degradation rate and its impact on AC-lifetime prediction

Oxide-field dependence of the NMOS hot-carrier degradation r...

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International Electron Devices Meeting (IEDM)

作者： S.A. Kim B. Menberu T.E. Kopley J.E. Chung Department of Electrical Engineering & Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA Central Research & Development Siemens AG Munich Germany

This study presents a general relationship between the NMOS hot-carrier degradation rate n and the oxide-electric field at the drain E/sub ox/, which is valid over a wide range of stress-bias conditions and device parameters. Physical mechanisms for this oxide-field dependence are explored. It is also shown that failure to account for the oxide-field dependence of n and the inherent non-linearity of the degradation time dependence can result in significant overestimation of the predicted AC lifetime.

关键词： MOS devices Hot carriers Degradation Stress MOSFETs Voltage Hydrogen computer science laboratories Testing

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Synthesis of optical wavelength filter responses

Synthesis of optical wavelength filter responses

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IEEE Photonics Conference (IPC)

作者： B.E. Little Chi Wu Wei-Ping Huang Department Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA Advanced Technology Laboratories Bell Northern Research Limited Ottawa ONT Canada Department Electrical and Computer Engineering University of Waterloo Waterloo ONT Canada

A new design method, variational optimization theory, is used to synthesize optical wavelength filter functions. In particular, spectrums with ultra-low sidelobes (

关键词： Optical filters Couplers Passband Couplings Gratings Band pass filters Optical network units Optical surface waves Filtering theory Bandwidth

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Pulse elongation and deconvolution filtering for medical ultrasonic imaging

Pulse elongation and deconvolution filtering for medical ult...

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IEEE Symposium (IUS) Ultrasonics

作者： B. Haider P.A. Lewin K.E. Thomenius Department of Electrical and Computer Engineering and Biomedical Engineering and Science Institute Drexel University Philadelphia PA USA Advanced Technology Laboratories Inc. Bothell WA USA

Range sidelobe artifacts which are associated with pulse compression methods can be reduced with a new method composed of Pulse Elongation and Deconvolution (PED). Both approaches yield similar signal-to-noise ratio (SNR) improvements. The deconvolution is implemented as a stabilized inverse filter. The excitation wave form is optimized in a minimum mean square error (MMSE) sense. An analytical expression for the power spectrum of the optimal pulse is presented and several techniques to numerically optimize the excitation pulse are shown. The effects of PED are demonstrated in computer simulations as well as ultrasonic images.

关键词： Deconvolution Filtering Biomedical imaging Ultrasonic imaging Pulse compression methods Signal to noise ratio Filters Pulse amplifiers Signal processing Transducers

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Investigation of hydrogen evolution and dangling bonds creation mechanism in amorphous silicon nitride thin films

Investigation of hydrogen evolution and dangling bonds creat...

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International Workshop on Active Matrix Liquid Crystal Displays, AMLCD

作者： T. Li J. Kanicki M. Fitzner W.L. Warren Center for Display Technology and Manufacturing Department of Electrical Engineering & Computer Science University of Michigan Ann Arbor MI USA Department of Electrical Engineering & Computer Science University of Michigan Ann Arbor MI USA Coordinated Science kboratory Department of Materid Science and Engineering University of Illinois Urbana IL USA Sandia National Laboratories Albuquerque NM USA

We have investigated the hydrogen evolution and its consequent impact on the silicon and nitrogen dangling bond density in Si- and N-rich amorphous hydrogenated silicon nitride films prepared by plasma-enhanced chemical vapor deposition. This investigation was done under different thermal annealing conditions through a combination of the Fourier transform infrared spectroscopy and electron spin resonance (ESR) measurements. We have found that the rate of hydrogen evolution from each bond depends on the film stoichiometry, and the N-H bonds are thermally less or more stable than the Si:H bonds in Si- and N-rich films, respectively. In N-rich silicon nitride, for example, the dissociation temperature of the Si-H bond is about 500 and 700/spl deg/C for the films deposited at 250 and 400/spl deg/C, respectively; and almost all of the N-H bonds are dissociated above 1000/spl deg/C. The IR and ESR results suggest that the thermal annealing of the N-rich films creates both K- and N-centers. But the K-center would be passivate during the thermal annealing to form new Si-N bonds, which are observed in the IR spectra.

关键词： Hydrogen Silicon Annealing Paramagnetic resonance Semiconductor films Plasma measurements Infrared spectra Nitrogen Amorphous materials Plasma chemistry

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Recent measurements of electron density profiles of plasmas in PLADIS I, a plasma disruption simulator

Recent measurements of electron density profiles of plasmas ...

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IEEE International Conference on Plasma science (ICOPS)

作者： J. Bradley G. Sharp J.M. Gahl V. Kuznetsov P. Rockett J. Hunter Department of Electrical and Computer Engineering University of New Mexico Albuquerque NM USA D. V. Efremov Science Research Institute of Electrophysical Apparatus Saint Petersburg Russia Fusion Technology Department Sandia National Laboratories Albuquerque NM USA

Summary form only given, as follows. Tokamak disruption simulation experiments are being conducted at the University of New Mexico (UNM) using the PLADIS I plasma gun system. PLADIS I is a high power, high energy coaxial plasma gun configured to produce an intense plasma beam. First wall candidate materials are placed in the beam path to determine their response under disruption relevant energy densities. An optically thick vapor shield plasma has been observed to form above the target surface in PLADIS I. Various diagnostics have been used to determine the characteristics of the incident plasma and the vapor shielding plasma. The cross sectional area of the incident plasma beam is a critical characteristic, as it is used in the calculation of the incident plasma energy density. Recently, a HeNe interferometer in the Mach-Zehnder configuration has been constructed and used to probe the electron density of the incident plasma beam and vapor shield plasma. The object beam of the interferometer is scanned across the plasma beam on successive shots, yielding line integrals of beam density on different chords through the plasma. Data from the interferometer is used to determine the electron density profile of the incident plasma beam as a function of beam radius. This data is then used to calculate the effective beam area. Estimates of beam area, obtained from other diagnostics such as damage targets, calorimeter arrays and off-axis measurements of surface pressure, will be compared with data from the interferometer to obtain a better estimate of the beam cross sectional area.

关键词： Plasma measurements Density measurement Plasma density Plasma diagnostics Plasma properties Particle beams Plasma materials processing Plasma simulation Electron beams Tokamaks

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FAULT-TOLERANT ASSOCIATE MEMORIES

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SYSTEMS AND computerS IN JAPAN 1995年第7期26卷 1-12页

作者： FUJIWARA, E TANAKA, T Member Faculty of Engineering Tokyo Institute of Technology Tokyo Japan 152 Eui Fujiwara:received his B.S. and M.S. degrees in Electronics Engineering in 1968 and 1970 respectively and his Dr. of Eng. degree in 1981 all from Tokyo Institute of Technology. In 1970 he joined the NTT Musashino Electrical Communication Laboratories and engaged in developing PIPS-1 and PIPS-11 computer systems. In 1988 he joined the Department of Computer Science Tokyo Institute of Technology as an Associate Professor. In 1990 he became a full Professor. He was a Visiting Professor at the Center for Advanced Computer Studies the University of Southwestern Louisiana from June 1985 to July 1986. His current research interests include coding theory for computers fault-tolerant memories VLSI defect-toleranceand WSI systems. He is a co-author ofError Control Coding for Computer Systems(Prentice-Hall1989) EssentiaLF of Error-Correcting Coding Techniques (Academic Press 1990) and other books. Dr. Fujiwara received the Young Engineer Award from the I.E.I.C.E. in 1978 and the Teshima Memorial Research Award in 1991. He is a senior member of the IEEE and a member of the Information Processing Society Japan. Associate Member

Because of its capability of high-speed search, the associative memory (CAM) is expected to be used in a variety of information processing systems. In this paper, novel fault-tolerant techniques which are effective for on-line use are proposed for TLB which is an example of the application of CAM. First, fault and error models of the TLB consisting of the CAM part and the SRAM part are clarified. Then, the fault-tolerant techniques for these faults and errors, such as distance separable technique, cod-ing technique, simplified 1-out-of-n check and graceful degradation, are proposed. The distance separable technique which encodes the data stored in the CAM part is the one which masks the faulty CAM part and prevents errors from propagating to the subsequent circuits. The coding technique checks the one-to-one correspondence between the data in the CAM and those in SRAM by using the SEC-DED code with byte error detection capability, i.e., SEC-DED-SbED code, and at the same time it detects and corrects errors in the data stored in SRAM. The simplified 1-out-of-n check processes association errors. The graceful degradation gives a flag in the faulty memory section and prevents it from being used. The methods proposed in this paper are evaluated from area augmentation and error detection capability perspectives. The results show that the fault-tolerant TLB with 32 virtual address bits, 32 physical address bits and 128 entries gives single fault detection probability of nearly 99 percent with 28 percent area increase.

关键词： CAM TLB DISTANCE SEPARABLE TECHNIQUE CODING TECHNIQUE SIMPLIFIED 1-OUT-OF-N CHECK GRACEFUL DEGRADATION

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A METHOD FOR PREDICTING CHAOTIC TIME-SERIES WITH OUTLIERS

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ELECTRONICS AND COMMUNICATIONS IN JAPAN PART III-FUNDAMENTAL ELECTRONIC science 1995年第5期78卷 44-53页

作者： ITOH, K Member NTT Communication Science Laboratories Yokosuka Japan 238-03 Ken-ichi Itoh received his B.E. degree in 1969 from the Department of Electrical Engineering Kyushu Institute of Technology and affiliated with NTT. He is engaged in research and development of computer hardware systems. At present he is Senior Research Engineer Supervisor NTT Communications Science Laboratories. He is a member of the Information Processing Society.

In recent years, there have been intensive studies on the short-term, prediction method for time-series data with chaotic properties. The prediction for the chaotic time-series data is executed, for example, as follows. Based on the single-variable time-series data, the trajectory of the attractor is reconstructed in the multidimensional space and the change of the trajectory is predicted by a polynomial approximation. However, when there exists a noise such as the outlier in the time-series, the prediction error is increased drastically. To solve this problem, this paper proposes a prediction method which is robust against the outlier. More precisely, the following three elaborations are added to the conventional method: (1) the coefficients of the polynomial are calculated by Biweight's estimation method;(2) the order of the polynomial is determined automatically examining the residual error;and (3) the data with a large prediction error are replaced by the predicted value and the next prediction is applied. An evaluation experiment is executed for the data where the pseudorandom variable with the Cauchy distribution is superposed on the chaotic time-series data generated by the Henon map and the Lorenz model. It is verified as a result that the proposed method can well suppress the increase of the prediction error due to the outliers, improving greatly the accuracy of the prediction compared to the conventional method.

关键词： CHAOS PREDICTION TIME-SERIES LEAST-SQUARES METHOD OUTLIER

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