Mesenchymal stem cells (MSCs) are widely used to treat inflammatory diseases and injuries, including wound healing, as they can immunomodulate and regenerate via paracrine mechanisms. MSC spheres, also known as mesens...
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Presents corrections to the paper, “A 0.02 mm 59.2 dB SFDR 4th-order SC with 0.5-to-10 MHz bandwidth scalability exploiting a recycling SC-buffer biquad,” (Zhao, Y., et al), IEEE J. Solid-State Circuits, vol. 50, no...
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Presents corrections to the paper, “A 0.02 mm 59.2 dB SFDR 4th-order SC with 0.5-to-10 MHz bandwidth scalability exploiting a recycling SC-buffer biquad,” (Zhao, Y., et al), IEEE J. Solid-State Circuits, vol. 50, no. 9, pp. 1988–2001, Sep. 2015.
In this paper, we discuss the fundamental design tradeoff among specific on-resistance (R on, sp ), gate charge (C gg ), quasi-saturation, and reliability characteristics for an integrated high voltage LDMOS. A novel ...
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In this paper, we discuss the fundamental design tradeoff among specific on-resistance (R on, sp ), gate charge (C gg ), quasi-saturation, and reliability characteristics for an integrated high voltage LDMOS. A novel patterned gate design is proposed and implemented in a 120V-rated NLDMOS. Optimal design characteristics are demonstrated with 30% improvement in switching FOM (R on, sp *Q gg ) and a robust I d, lin shift passing 15 years lifetime specification. The new design technique is proven to significantly improve the high voltage LDMOS design tradeoff.
The effect of drift region on the flicker noise in LDMOS devices in the linear and saturation regions is analyzed using measured data and device simulations. In the linear region, noise in the drift region arises from...
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The effect of drift region on the flicker noise in LDMOS devices in the linear and saturation regions is analyzed using measured data and device simulations. In the linear region, noise in the drift region arises from gate-drain overlap region and is significant for longer channel length devices. For shorter channel length devices, the sub-surface current flow in the gate-drain overlap region reduces the contribution of noise from the drift region. In the saturation region, noise is dependent on quasi-saturation condition, and reaches its lowest value only when the channel is saturated.
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f_...
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ISBN:
(纸本)9781424484256
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f_T characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring <10%I_(dlin) shift over 10 year lifetime for +/-10% STI depth variations.
technology is driven by the evolving CMOS roadmap, and as a consequence, it is increasingly difficult to integrate high performance bipolar devices without unduly increasing process complexity. Designers want and need...
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technology is driven by the evolving CMOS roadmap, and as a consequence, it is increasingly difficult to integrate high performance bipolar devices without unduly increasing process complexity. Designers want and need good NPN devices for key circuits; a table of some of these is outlined. Bipolar device needs and the difficulties of device performance vs. integration are described for typical advanced power BiCMOS technology with respect to design concerns. Other bipolar issues relating to guard-ring, parasitics, and ESD concerns are also briefly discussed.
作者：
T.B. MillsF. HebertAnalog Division
Monitors Products National Semiconductor Corporation Santa Clara CA USA Analog Division
Analog/Mixed-Signal Process Technology Development National Semiconductor Corporation Santa Clara CA USA
A family of monolithic CRT drivers has been fabricated on a new high-speed complementary high-voltage process. An example is the LM2406 CRT driver which achieves 40 volt p-p swings in less than 9.5 nsec into 12 pF loads.
A family of monolithic CRT drivers has been fabricated on a new high-speed complementary high-voltage process. An example is the LM2406 CRT driver which achieves 40 volt p-p swings in less than 9.5 nsec into 12 pF loads.
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