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International Electron Devices Meeting (IEDM)

作者： T. Miyata H. Tanaka K. Kagimoto M. Kamiyashiki M. Kamimura A. Hidaka M. Goto K. Adachi A. Hokazono T. Ohguro K. Nagaoka Y. Watanabe S. Hirooka Y. Ito S. Kawanaka K. Ishimaru Center for Semiconductor Research and Development Kawasaki Saiwai-Ku Logic LSI Product Engineering Department Logic LSI Division Oita Process Manufacturing Engineering Department Oita Memory-Division Oita Advanced Development Center Oita Mixed Signal IC Engineering Department Toshiba Corporation Oita

We propose Multi Gate Oxide - Dual Work-Function (MGO-DWF)-MOSFET which is suitable for low power AB-class RF power amplifier (RF PA). This was examined for the first time by comparing with a standard Cascode connection circuitry composed of LV- and HVMOSFETs. Dramatically improved F MAX (150 GHz) with sufficient drain break-down voltage (V BD ) was experimentally confirmed in a practical device structure. MGO-DWF-MOSFET has multiple roles in a unit device such as LV-MOSFET in source side regions and HV-MOSFET in drain side regions. This distinctive structure enables the reduction of the device area and a gate capacitance (C G ) with a higher transconductance (G M ) and the suppression of drain conductance (G DS ). Enhancement of F MAX , in other words, DC operation current reduction is achieved at a given operation point. This indicates that MGO-DWF MOSFET is advantageous for low power amplifier circuitry applications, typically for RF PA in internet of things (IoT) products.

关键词： Logic gates MOSFET Radio frequency Capacitance Resistance Degradation Standards

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Power BiCMOS process with high voltage device implementation for 20 V mixed signal circuit applications

Power BiCMOS process with high voltage device implementation...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： W. Nehrer L. Anderson T. Debolske T. Efland P. Fleischmann C. Haidinyak W. Leitz M. McNutt E. Mindricelu S. Pendharkar J. Smith R.V. Taylor Mixed Signal Process Development Texas Instruments Inc. Dallas TX USA Mixed Signal Process Development Texas Instruments Inc. Santa Cruz CA USA Mixed Signal Power Management Products Technology Texas Instruments Inc. Dallas TX USA

ISBN: (纸本)4886860567

Optimization of circuit performance and cost generally involves a trade-off between a) circuit design and die area efficiency plus shortest time to market with b) maintaining production efficiency of multiple process variants with multiple component lists. Key technology drivers were identified and redesigned in the LBC6 generation power BiCMOS process described herein to achieve a 40% die area reduction for the huge 20 V and below power IC application market. In this paper, we discuss components and their design, generic process flow, and reasoning.

关键词： BiCMOS integrated circuits Voltage Design optimization Circuit optimization Cost function Circuit synthesis Time to market Optimized production technology Driver circuits Power generation

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The optimization of LBC6 power/mixed-signal IC BiCMOS process

The optimization of LBC6 power/mixed-signal IC BiCMOS proces...

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Bipolar/BiCMOS Circuits and Technology Meeting

作者： W. Nehrer J.C. Brito T. DeBolske T. Efland P. Fleischmann D. Hannaman R. Higgins L. Hutter M. McNutt E. Mindricelu S. Pendharkar J. Smith R.V. Taylor Mixed Signal Process Development Texas Instruments Inc. Dallas TX USA Mixed Signal Process Development Texas Instruments Inc. Dallas Texas Santa Cruz CA USA Power Management Products Technology Texas Instruments Inc. Dallas Texas Santa Cruz CA USA

ISBN: (纸本)0780370198

A 30 V, 0.5 /spl mu/m, triple level metal (TLM) + thick top copper metal, power-BiCMOS technology for Hard Disk Drive (HDD) servo applications is described. Based on a die area analysis, a vital few components and process features were optimized over the prior-generation process, resulting in a 40% die size reduction for typical products. Insight into this optimization effort is provided.

关键词： BiCMOS integrated circuits Optimized production technology CMOS technology Isolation technology Costs process design Bonding Product design Voltage signal processing

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Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology

Comparative low frequency noise analysis of bipolar and MOS ...

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Custom Integrated Circuits Conference (CICC)

作者： J.A. Babcock B. Loftin P. Madhani Xinfen Chen A. Pinto D.K. Schroder Mixed-Signal-Products Process Development Group Texas Instruments Deutschland GmbH Freising Germany Department of Electrical Engineering Arizona State University Tempe AZ USA

ISBN: (纸本)0780365917

In this paper, for the first time we compare 1/f noise in both complementary bipolar and complementary MOSFET transistors fabricated on thick film bonded SOI with full dielectric isolation capability. For MOS devices, a new relationship for 1/f noise is given which allows intuitive insight when comparing technologies. Both bipolar and MOS transistors show agreement to a number fluctuation model for noise mechanisms. A factor of 2 lower 1/f noise is determined for the PNP in comparison to NPN transistors. For this technology generation, bipolar transistors indicate an order of magnitude lower noise level when compared to MOSFETs under similar drive currents and effective area conditions. Finally, we discuss generation recombination noise, which can be observed in some of the devices.

关键词： Low-frequency noise MOSFET circuits Thick films Bonding Dielectrics MOS devices Isolation technology Fluctuations Bipolar transistors Noise level

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A study of boron doping profile control for a low V/sub t/ device used in the advanced low power, high speed mixed-signal IC

A study of boron doping profile control for a low V/sub t/ d...

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IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing

作者： A. Chen K. Flessner P. Sana R. Dixon F. Malone P. Ying L. Hutter Mixed Signal Process Development Group Texas Instrumenits Inc. Dallas TX USA DFAB Product Group Texas Instrumenits Inc. Dallas TX USA

The effects of through-gate oxide implantation on gate oxide integrity (GOI) and defect density have been investigated. It is observed that through-gate implants can reduce the off-state leakage current by 1 to 2 orders, giving the same V/sub t/ value, and can maintain much tighter V/sub t/ spread control without sacrificing the GOI and yield performance. These attractive advantages make the through-gate oxide implant process a promising candidate for high speed, low power applications.

关键词： Boron Doping profiles Implants Leakage current Threshold voltage signal processing Degradation Temperature MOS devices High speed integrated circuits

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16-60 V rated LDMOS show advanced performance in a 0.72 /spl mu/m evolution BiCMOS power technology

16-60 V rated LDMOS show advanced performance in a 0.72 /spl...

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International Electron Devices Meeting (IEDM)

作者： C.-Y. Tsai T. Efland S. Pendharkar J. Mitros A. Tessmer J. Smith J. Erdeljac L. Hutter Mixed Signal Power Component and Power BiCMOS Process Development Texas Instruments Inc. Dallas TX USA

In this work, performance advances are featured for new and improved multi voltage rated (16 V to 60 V) LDMOS. Performance improvements were achieved by leveraging off of (1) an optimized off-set, photo aligned, coimplanted double-diffused well (DWL), (2) two n-type dopings in the drift region, and (3) shrink from 1.0 /spl mu/m to 0.72 /spl mu/m. The R/sub sp/ vs. BV/sub dss/ trend for these devices is the best reported to date for conventional lateral technology: @V/sub gs/=12.75 V (3 MV/cm) R/sub sp/=0.95 m/spl Omega/ cm/sup 2/, BV=69.3 V; R/sub sp/=0.68 m/spl Omega/ cm/sup 2/, BV=50.0 V; R/sub sp/=0.45 m/spl Omega/ cm/sup 2/, BV=33.0 V; R/sub sp/=0.36 m/spl Omega/ cm/sup 2/, BV=19.0 V; for 60, 40, 25, and 16 V rated conventional LDMOS devices.

关键词： BiCMOS integrated circuits Doping signal processing Voltage Isolation technology Instruments Computer peripherals Automotive engineering Intelligent vehicles Application software

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IC implementation challenges of a 2.4 GHz wireless LAN chipset

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Journal of VLSI signal processing Systems for signal, Image, and Video Technology 1996年第2-3期13卷 143-163页

作者： Chian, M. Croft, G. Jost, S. Landy, P. Myers, B. Prentice, J. Schultz, Doug Harris Semiconductor Melbourne FL 32901 United States Integrated RF Solutions Palm Bay FL 32909 United States EE/CP Department FIT Department of Design Systems Advanced Process Development Group Mixed Signal Product Development Group Florida Institute of Technology

The recent introduction of IC technologies offering high frequency transistors with ft greater than 10 GHz has opened new opportunities for higher integration of wireless communication systems. Fast silicon IC devices...

The recent introduction of IC technologies offering high frequency transistors with f_t greater than 10 GHz has opened new opportunities for higher integration of wireless communication systems. Fast silicon IC devices make possible the integration of many RF subsystems on a single die and offer a total solution to mixed frequency (low frequency and RF) and mixed signal (analog and digital) systems. This paper describes IC implementation challenges of a 2.4 GHz wireless LAN chipset developed at Harris Semiconductor. © 1996 Kluwer Academic Publishers.

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A triple-channel 90 V high-speed monolithic CRT driver circuit

A triple-channel 90 V high-speed monolithic CRT driver circu...

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Bipolar/BiCMOS Circuits and Technology Meeting

作者： T.B. Mills F. Hebert Analog Division Monitors Products National Semiconductor Corporation Santa Clara CA USA Analog Division Analog/Mixed-Signal Process Technology Development National Semiconductor Corporation Santa Clara CA USA

A family of monolithic CRT drivers has been fabricated on a new high-speed complementary high-voltage process. An example is the LM2406 CRT driver which achieves 40 volt p-p swings in less than 9.5 nsec into 12 pF loads.

关键词： Cathode ray tubes Driver circuits Computer displays Frequency Clocks Preamplifiers Milling machines USA Councils Bandwidth Breakdown voltage

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