When a LCD display static images, power consumption can be reduced by employing a low driving frequency. However, when the driving frequency is decreased, there is a problem that the brightness of the display may chan...
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When a LCD display static images, power consumption can be reduced by employing a low driving frequency. However, when the driving frequency is decreased, there is a problem that the brightness of the display may change with time, a phenomenon known as flickering. One factor responsible for the flickering issue is flexoelectric effect. We show that flickering in ADvanced Super Dimension Switch (ADS) LCD can be significantly reduced by doping a liquid crystal dimer and using polymer stabilization. We demonstrated that 2 Hz driving frequency can be used to display static images.
We propose an effective optical approach to monitor superconductors in a two-layer superconductor-normal metal structure. Effectively, such a hybrid system represents a resonator, where electrons are strongly coupled ...
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We propose an effective optical approach to monitor superconductors in a two-layer superconductor-normal metal structure. Effectively, such a hybrid system represents a resonator, where electrons are strongly coupled with light. We show that the interaction of light with the superconductor is strongly boosted in the presence of the neighboring metal and, as a result, the electromagnetic power absorption of the system is dramatically enhanced. It manifests itself in a giant Fano-type resonance which can uniquely characterize the elementary excitations of the system. Our approach is especially promising for topological superconductors, where Majorana fermions could be revealed and controlled by light.
In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variableerature scanning t...
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In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variableerature scanning tunneling microscope (STM). The Pb-covered Si(111) surface form a low-symmetry row-like (37×) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1A and T1B) on the trimer row after deposition at the sample temperature of ∼125 K. The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1A and T1B sites within the same trimer when the temperature was raised to ∼150 K. When the temperature was raised above ∼160 K, the adsorbed Si atoms could hop to other trimers along the same trimer row. Below ∼170 K, short hops to adjacent trimers dominated, but long hops dominated at temperatures above ∼170 K. The activation energy and prefactor for the Si atoms diffusion were derived through analysis of continuous-time imaging at temperatures from 160-174 K. In addition, irreversible aggregation of single Si atoms into Si clusters started to occur at the phase boundaries or defective sites at temperatures above In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125-230 K using a variableerature scanning tunneling microscope (STM). The Pb-covered Si(111) surface form a low-symmetry row-like (37×) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1A and T1B) on the trimer row after deposition at the sample temperature of ∼125 K. The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1A and T1B sites within the same trimer when the temperature was raised to ∼150 K. When the temperature was raised above ∼160 K, the adsorbed Si atoms could hop to other trimers along the same tr
In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125 to 230 K using a variable-temperature sc...
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In this work, we studied the adsorption behavior of deposited Si atoms along with their diffusion and other dynamic processes on a Pb monolayer-covered Si(111) surface from 125 to 230 K using a variable-temperature scanning tunneling microscope. The Pb-covered Si(111) surface forms a low-symmetry rowlike (7×3) structure in this temperature range and the Si atoms bind favorably to two specific on-top sites (T1A and T1B) on the trimer row after deposition at the sample temperature of ∼125K. The Si atoms were immobile at low temperatures and started to switch between the two neighboring T1A and T1B sites within the same trimer when the temperature was raised to ∼150K. When the temperature was raised above ∼160K, the adsorbed Si atoms could hop to other trimers along the same trimer row. Below ∼170K, short hops to adjacent trimers dominated, but long hops dominated at temperatures above ∼170K. The activation energy and prefactor for the Si atoms diffusion were derived through analysis of continuous-time imaging at temperatures from 160 to 174 K. In addition, irreversible aggregation of single Si atoms into Si clusters started to occur at the phase boundaries or defective sites at temperatures above ∼170K. At temperature above ∼180K, nearly all Si atoms aggregated into clusters, which may have important implications for the atomic mechanism of epitaxial growth of Si on the Pb-covered Si(111) surface. In addition, our study provides strong evidence for breaking in the mirror symmetry in the (7×3)-Pb structure, which has implications for the atomic model of this controversial structure.
Microscopic Imaging Ellipsometry is an optical technique that uses an objective and sensing procedure to measure the ellipsometric parameters Ψ and Δ in the form of microscopic maps. This technique is well known for...
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