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检索条件"机构=Nation Key Laboratory of Science and Technology on Circuits and Module"
3 条 记 录,以下是1-10 订阅
Study on the Manufacturing Process of Multilayer Silicon-based Filters Based on Au-Sn Soldering
Study on the Manufacturing Process of Multilayer Silicon-bas...
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2023 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2023
作者: Gong, Yaolong Yang, Shicheng Li, Sheng Wang, Feng Xia, Weijuan Wang, Ping Dept. of Microwave and Millimeter Wave Circuits Xi'an China Dept. of Nation Key Laboratory of Science and Technology on Space Microwave Xi'an China
Waveguide filters with dielectric cavities have the advantages of high quality factor, easy integration and miniaturization, and silicon is the commonly chosen dielectric material for waveguide filters due to its exce... 详细信息
来源: 评论
Study on the Manufacturing Process of Multilayer Silicon-based Filters Based on Au-Sn Soldering
Study on the Manufacturing Process of Multilayer Silicon-bas...
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IEEE International Workshop on Electromagnetics, Applications and Student Innovation (iWEM)
作者: Yaolong Gong Shicheng Yang Sheng Li Feng Wang Weijuan Xia Ping Wang Dept. of Microwave and Millimeter Wave Circuits China Aerospace Science and Technology (CAST504) Xi’an China Dept. of Nation Key Laboratory of Science and Technology on Space Microwave China Aerospace Science and Technology (CAST504) Xi’an China
Waveguide filters with dielectric cavities have the advantages of high quality factor, easy integration and miniaturization, and silicon is the commonly chosen dielectric material for waveguide filters due to its exce...
来源: 评论
Analytical surface potential based model for AlxGa1−xN/AlyGa1−yN/GaN DH HEMTs
Analytical surface potential based model for AlxGa1−xN/AlyG...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Jie Wang Haiyan Lu LingLing Sun Jun Liu Haijun Gao Mingzhu Zhou Nation Key Laboratory of Science and Technology on Circuits and Module Nanjing China Key Laboratory of RF Circuits and Systems Hangzhou Dianzi University Hangzhou China
We present an accurate and robust surface potential based compact model for Al x Ga 1-x N/Al y Ga 1-y N/GaN double hetero-junction high electron mobility transistors (DH HEMTs). The effects of band on the carrier dist... 详细信息
来源: 评论