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Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement

Nano Research 2023年第5期16卷 7661-7670页

作者： Gengxu Chen Xipeng Yu Changsong Gao Yan Dai Yanxue Hao Rengjian Yu Huipeng Chen Tailiang Guo National&Local United Engineering Laboratory of Flat Panel Display Technology Institute of Optoelectronic DisplayCollege of Physics and Information EngineeringFuzhou UniversityFuzhou 350108China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China

Multi-sensory neuromorphic devices(MND)have broad potential in overcoming the structural bottleneck of von Neumann in the era of big ***,the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity,which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing ***,a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors(FGT)is *** CsPbBr_(3)/TiO_(2)core–shell nanocrystals(NCs)prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive *** device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room ***,when the temperature varies from 20 to 120℃back and forth,the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors,which contributes to the efficient visual/thermal fusion *** work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors(OFET).

关键词： floating gate phototransistors perovskite nanocrystals temperature multisensory neuromorphic devices

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A Weight-Tunable Oxide Synaptic Transistor 2

A Weight-Tunable Oxide Synaptic Transistor

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2nd IEEE International Conference on Control, Electronics and Computer technology, ICCECT 2024

作者： Ren, Zexuan Qin, Congyao Chen, Huipeng National & Local United Engineering Laboratory of Flat Panel Display Technology Fuzhou University Fuzhou China

ISBN: (纸本)9798350380958

Artificial neural systems demonstrate outstanding performance by processing sensory data and realtime contexts in parallel, far surpassing conventional von Neumann computers in terms of energy efficiency. This property has sparked widespread interest within the field of artificial intelligence. In recent years, research on electric-double-layer synaptic transistors has attracted much attention due to their similarity in ionic motion modulation to that of biological synapses, thereby demonstrating a wealth of potential application scenarios. In this paper, we demonstrate a solid-state electrolyte-gated transistor that uses TaOx with a unique ionic composition as the insulating layer and transparent indium tin oxide (ITO) as the semiconductor layer to prepare artificial synaptic thin-film transistors (TFTs) with signal transmission and self-learning properties. The devices exhibit significant memory holding, memory bank voltage exceeds 6V at operating voltages below 10V. The shift of oxygen Void Sites in the insulating layer in synaptic transistor, entrained by electrical forces created from input signals, plays a crucial role in simulating synaptic behavior. In addition, the device successfully simulates the enhancement and inhibition of synaptic weights, such as excitatory postsynaptic current (EPSC), inhibitory response (IPSC), paired pulse facilitation (PPF), and long-term potentiation (LTP). © 2024 IEEE.

关键词： Data handling

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Water-driven photoluminescence reversibility in CsPbBr_(3)/PDMSPUa composite

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Nano Research 2022年第7期15卷 6466-6476页

作者： Junhu Cai Chenhui Wang Xinpei Hu Yuanyuan Ye Lijuan Zhong Enguo Chen Yun Ye Sheng Xu Jie Sun Qun Yan Tailiang Guo National and Local United Engineering Laboratory of Flat Panel Display Technology College of Physics and Information EngineeringFuzhou UniversityFuzhou 350108China

Strong ionic character endows all-inorganic perovskite nanocrystals(NCs)with particular optoelectronic features when interacting with common polar solvents,such as ***,the interaction mechanism of water affecting perovskite NCs is still lack of in-depth *** study systematically explores the roles of water on CsPbBr_(3) nanocrystals(CNCs)by finely controlling the polymer coating degree of polydimethylsiloxane-based polyurea(PDMS-PUa).Through this coating,the effect of water on CNCs is found to experience from“fluorescence quenching”owing to irreversible crystal decomposition towards“forward fluorescence reversibility”by crystal destruction and *** gradually enhanced coating,a phenomenon of“reverse fluorescence reversibility”is further observed in that water begins to passivate the CNCs’defect ***,“fluorescent balance”can be achieved with a thick enough coating,where water can hardly contact with the *** by the fluorescence reversible mechanism discovered,a new wearable intelligent sensing skin is demonstrated by using the CsPbBr_(3)/PDMS-PUa composite as raw *** water contact and humidity change can be perceived through photoluminescence(PL)intensity,corresponding to stimuli-responsive sensory nerves of human *** is expected that these findings will shed some new lights on perovskite NCs.

关键词： CsPbBr_(3) polydimethylsiloxane-based polyurea(PDMS-PUa) photoluminescence reversibility water and humidity sensing intelligent skin

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All optical artificial synapses based on long-afterglow material for optical neural network

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Nano Research 2023年第7期16卷 10004-10010页

作者： Wenjie Lu Qizhen Chen Huaan Zeng Hui Wang Lujian Liu Tailiang Guo Huipeng Chen Rui Wang Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Department of Neurosurgery Fujian Medical University Union HospitalFuzhou 350001China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China

Artificial neural network with broad application prospect has attracted particular attention due to the promise of solving the memory wall *** neural devices that mix light and electricity provide more degrees of freedom for the design of artificial neural network,but they still do not get rid of the shackles that the response signal needs circuit to *** exploration of all-optical neural devices(optical signal input and output)is expected to solve this ***,an all-optical synaptic device simply based on a long-afterglow material is *** optical properties of the all-optical synaptic device are similar to the responses in biological *** image displays and memory functions can be achieved by combining alloptical synaptic arrays with synaptic memory ***,the optical summation of all-optical synaptic array pixels can be completed by combining the focusing characteristics of convex lens,which realizes the photon transmission after preprocessing multiple input ***,the simple single-layer structure of all-optical synapses with polydimethylsiloxane(PDMS)as the carrier has high plasticity and is expected to achieve large-scale *** work enriches the diversity of artificial synapses and shows the huge development potential of photoelectric artificial neural networks.

关键词： synaptic plasticity all optical optical computation optical neural network

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基于CsPbBr_(3)-MXene纳米结构的高线性度突触光电晶体管用于图像分类和边缘检测

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Science China Materials 2024年第7期67卷 2246-2255页

作者：代岩陈耿旭黄伟龙许晨晖刘常飞黄紫玉郭太良陈惠鹏 National&Local United Engineering Laboratory of Flat Panel Display Technology Institute of Optoelectronic DisplayCollege of Physics and Information EngineeringFuzhou UniversityFuzhou 350108China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China

人工光突触为克服数据存储和处理中的冯诺依曼瓶颈,提供了一种有效的解决方案.人工光突触通过消除带宽连接密度的权衡和低功耗,展现了其相较于电突触的优势.钙钛矿量子点由于其易于合成和良好的光电性能,在人工光突触中引起了广泛的关注... 详细信息

人工光突触为克服数据存储和处理中的冯诺依曼瓶颈,提供了一种有效的解决方案.人工光突触通过消除带宽连接密度的权衡和低功耗,展现了其相较于电突触的优势.钙钛矿量子点由于其易于合成和良好的光电性能,在人工光突触中引起了广泛的关注.然而,有限的载流子迁移率和非线性性能阻碍了它在神经形态中的应用.本研究提出了一种吸附CsPbBr_(3)的MXene纳米结构(CsPbBr_(3)-MXene),即在MXene纳米片上原位生长CsPbBr_(3)量子点,并将其作为光电突触晶体管的吸光层,CsPbBr_(3)和MXene形成的异质结构增强了光电流的产生.在相同的光脉冲刺激下,与仅含CsPbBr_(3)的突触晶体管相比,CsPbBr_(3)-MXene突触晶体管的兴奋性突触后电流(EPSC)提高了24.6%.经过计算和比较,其线性度有了明显的改善(从4.586到1.099);此外,其对手写数字分类的识别准确率也显著提高(从86.13%到92.05%);边缘检测的F1分数也有所提高(从0.8165到0.9065),更加接近于1.这些提升表明这项工作将有助于神经计算领域的进一步发展.

关键词： in-situ growth CsPbBr_(3)-attached MXene synaptic phototransistor pattern recognition accuracy image preproces-sing

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Flexible multi-level quasi-volatile memory based on organic vertical transistor

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Nano Research 2022年第1期15卷 386-394页

作者： Huihuang Yang Qian Yang Lihua He Xiaomin Wu Changsong Gao Xianghong Zhang Liuting Shan Huipeng Chen Tailiang Guo Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China Zhicheng College Fuzhou UniversityFuzhou 350002China

Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the ***,the storage wair between non-volatile memory and volatile memory retards the further improvement of modern memory computing ***,a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor *** to vertical structure and appropriate doping ratio of blend film,the quasi-volatile memory device displayed 1,560 times longer data retention time(>100 s)with respect to the dynamic random access memory and fast data programming speed(20 ps)in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile ***,the device retention characteristics could be further promoted under the photoelectric synergistic stimulation,which also provided the possibility to reduce electric writing ***,the quasi-volatile memory device showed good electrical performance under bending *** work provides a simple solution to fabricate multi-level quasi-volatile memory,which opens up a whole new avenue of"universal memory"and lays a solid foundation for low power and flexible random access memory devices.

关键词： vertical transistor organic transistor memory perovskite quantum dot quasi-volatile memory storage wall

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An Optoelectronically Modulated Artificial Bionic Visual Neuron 2

An Optoelectronically Modulated Artificial Bionic Visual Neu...

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2nd IEEE International Conference on Control, Electronics and Computer technology, ICCECT 2024

作者： Qin, Congyao Lin, Jiaming Chen, Huipeng College of Physics and Information Engineering Fuzhou University Fuzhou China Fuzhou University National & Local United Engineering Laboratory of Flat Panel Display Technology Fuzhou China

ISBN: (纸本)9798350380958

The visual perception system is the most important part of the human body to perceive and receive information about the external environment, in which the visual neuron is the basic unit of the visual perception system to achieve the function. As an important part of the bionic neuromimetic perception system, the artificial bionic visual neural system is diligently striving to surmount the computational bottlenecks inherent in the traditional von Neumann architecture. However, structural redundancy and information transmission loss remain a challenge for artificial visual perception systems based on sensor-artificial neuron connections. Here, we propose an artificial bionic visual neuron of sense-storage-computing monolithic type, integrating a light-absorbing layer based on chalcogenide quantum dots and conjugated polymers on top of tantalum oxide artificial neural components, which has good optoelectronic synergistic integration capability. The proposed artificial visual neurons exhibit typical bipolar switching characteristics and integral ignition performance, while showing threshold change behaviour for photomodulation. The unique optoelectronic co-integration ability of the artificial visual neurons can provide assistance for constructing more efficient and low-power artificial visual perception systems, which has a broad application prospect. © 2024 IEEE.

关键词： Bionics

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Towards mixed physical node reservoir computing:light-emitting synaptic reservoir system with dual photoelectric output

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Light(Science & Applications) 2024年第9期13卷 1865-1877页

作者： Minrui Lian Changsong Gao Zhenyuan Lin Liuting Shan Cong Chen Yi Zou Enping Cheng Changfei Liu Tailiang Guo Wei Chen Huipeng Chen Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityFuzhou 350207China Department of Chemistry National University of Singapore3 Science Drive 3Singapore 117543Singapore Department of Physics National University of Singapore3 Science Drive 3Singapore 117543Singapore

Memristor-based physical reservoir computing holds significant potential for efficiently processing complex spatiotemporal data,which is crucial for advancing artificial ***,owing to the single physical node mapping characteristic of traditional memristor reservoir computing,it inevitably induces high repeatability of eigenvalues to a certain extent and significantly limits the efficiency and performance of memristor-based reservoir computing for complex ***,this work firstly reports an artificial light-emitting synaptic(LES)device with dual photoelectric output for reservoir computing,and a reservoir system with mixed physical nodes is *** system effectively transforms the input signal into two eigenvalue outputs using a mixed physical node reservoir comprising distinct physical quantities,namely optical output with nonlinear optical effects and electrical output with memory *** previously reported memristor-based reservoir systems,which pursue rich reservoir states in one physical dimension,our mixed physical node reservoir system can obtain reservoir states in two physical dimensions with one input without increasing the number and types of *** recognition rate of the artificial light-emitting synaptic reservoir system can achieve 97.22%in MNIST ***,the recognition task of multichannel images can be realized through the nonlinear mapping of the photoelectric dual reservoir,resulting in a recognition accuracy of 99.25%.The mixed physical node reservoir computing proposed in this work is promising for implementing the development of photoelectric mixed neural networks and material-algorithm collaborative design.

关键词： reservoir mixed system

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Tandem light-emitting technology accelerates the commercial application of perovskite LEDs

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Light(Science & Applications) 2024年第12期13卷 2861-2862页

作者： Xiang Zhang Jiajun Luo Enguo Chen Abd.Rashid bin Mohd Yusoff Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074 HubeiChina National and Local United Engineering Laboratory of Flat Panel Display Technology College of Physics and Information EngineeringFuzhou UniversityFuzhouFujian 350108China Department of Physics Faculty of ScienceUniversiti Teknologi MalaysiaJohor BahruMalaysia

Hybrid tandem perovskite-organic LED has been developed to achieve high external quantum efficiency,narrow linewidth,and extended device lifespan,which shows great promise for future perovskite-EL-based commercial app... 详细信息

关键词： emitting perovskite narrow

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The rapid synthesis of CdS nanorods by optimizing the dodecanethiol proportion for photocatalysis

The rapid synthesis of CdS nanorods by optimizing the dodeca...

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2024 International Conference on Optoelectronic Materials and Devices, ICOMD 2024

作者： Zhang, Liyan Zhao, Wenxiao Ye, Yun Lin, Zexi Wang, Ziyi Zheng, Xingke Chen, Enguo Xu, Sheng Guo, Tailiang Institute of Optoelectronic Display National & Local United Engineering Lab of Flat Panel Display Technology Fuzhou University Fuzhou350002 China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou350100 China

ISBN: (数字)9781510689046

ISBN: (纸本)9781510689039

Cadmium sulfide (CdS) nanocrystals with diverse morphologies are extensively utilized in various fields. For example, CdS nanorods are widely used in photocatalysis and photodetectors due to their high efficiency in photogenerated carrier separation. However, existing methods for synthesizing CdS nanorods typically require high temperatures and pressures, which limit the application of this material. In this work, an efficient hot injection procedure to control about growth in Cadmium sulfide nanorods by optimizing the proportion of dodecanethiol is reported, demonstrating the effective control of CdS nanorods growth by dodecanethiol. The maximum degradation efficiency of CdS nanorods applied to photodegradation of Rhodamine B (RhB) can reach 96%, indicating that the synthesized CdS nanorods have excellent photocatalytic properties. It is attributed to their broad absorption within the visible spectrum, which results in excellent light harvesting. And their one-dimensional structure facilitates carrier separation. Dodecanethiol act as a selective role within morphology of the CdS nanomaterials, which is anticipated to be utilized in the creation of other sulfides with different morphologies. © 2025 SPIE.

关键词： Nanorods

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