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Enhanced power transmission for on-road AGV wireless charging systems using a current-optimized technique

Progress In Electromagnetics Research C 2019年 96卷 205-214页

作者： Zhang, Jin Chen, Dong Zhang, Chen School of Electronic and Information Engineering Jinling Institute of Technology Nanjing211169 China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing210023 China School of Electric Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China School of Electrical Engineering Southeast University Nanjing210096 China

This paper provides a sound wireless power transfer (WPT) recharging solution for onroad automated guided vehicle (AGV) system. In this solution, multiple transmitting coils serve as power transmitters (TXs), and a receiving coil in AGV serves as a power receiver (RX). The multiple TXs are along a straight track for dynamic charging to AGV. The circuit model of multiple-TX and single-RX WPT system is first constructed based on circuit theory (CT), and then current-optimized scheme based on Lagrangian multiplier method is proposed to tune the currents in multiple TXs to maximize the power delivered to the load (PDL). The equal current (EC Case) flowing through each TX is compared with the optimal current (OC Case). Through contrastive analysis, the OC Case shows its advantages in PDL. Finally, the theoretical analysis results are confirmed by the results of full-wave electromagnetic simulation. © 2019, Electromagnetics Academy. All rights reserved.

关键词： Electromagnetic simulation

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Dual-band and dual-polarized repeater antenna for wearable applications

Dual-band and dual-polarized repeater antenna for wearable a...

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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Li, Kai Xu, Li-Jie Duan, Zhu Tang, Yiming Bo, Yaming National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210023 China Research Center of Applied Electromagnetics Nanjing University of Information Science and Technology Nanjing210044 China

ISBN: (纸本)9781538663462

A novel dual-band repeater antenna is presented for wearable applications in this paper, covering 2.45 GHz (2.4-2.485 GHz) and 5.8 GHz (5.725-5.875 GHz) industrial scientific medical (ISM) bands. By utilizing stacked structure, different polarization properties are achieved at two bands for the proposed antenna. At 2.45 GHz ISM band, circular polarization property is achieved by adopting a truncated patch at the bottom layer, meeting the demands of communication with implants. While at 5.8 GHz ISM band intended for off-body communication, shorted circular patch is introduced, forming a monopole-like radiation pattern with linear polarization property. © 2018 IEEE.

关键词： Directional patterns (antenna)

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A 14-GHz 8-bit Direct Digital Synthesizer in InP DHBT technology

A 14-GHz 8-bit Direct Digital Synthesizer in InP DHBT Techno...

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IEEE International Workshop on Radio-Frequency integration technology (rfIT)

作者： Xiaopeng Li Yi Zhang Zhigong Wang Youtao Zhang Min Zhang Wei Cheng Hao Gao Nanjing GuoBo Electronics Co.Ltd Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assemblyTechnology Nanjing China Institute of RF-&-OE ICs Southeast University Nanjing China

This paper describes a 14-GHz 8-bit direct digital synthesizer(DDS)which is implemented using a 0.7-μm InP double hetero-junction bipolar transistor (DHBT) process. The DDS presented uses a sin-weighted nonlinear DAC to achieve a phase-to-amplitude ROM-less architecture which can make the best of speed advantage of the InP DHBT process for medium to large scale mixed signal integrated circuits. A simplified pipelined phase accumulator is used to reduce power consumption. The average value of SFDR of the output signal of the DDS in the Nyquist bandwidth is -24.8 dBc. The circuit integrates 2122 transistors, consumes a power of 2.4-W, and has a Figure of Merit (FOM) of 5.83GHz/W.

关键词： Indium phosphide III-V semiconductor materials Adders DH-HEMTs Clocks Pipelines Registers

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Author Correction: Type-printable photodetector arrays for multichannel meta-infrared imaging

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Nature communications 2024年第1期15卷 5622页

作者： Junxiong Guo Shuyi Gu Lin Lin Yu Liu Ji Cai Hongyi Cai Yu Tian Yuelin Zhang Qinghua Zhang Ze Liu Yafei Zhang Xiaosheng Zhang Yuan Lin Wen Huang Lin Gu Jinxing Zhang School of Electronic Information and Electrical Engineering Institute of Advanced Study Chengdu University Chengdu 610106 China. guojunxiong@***. School of Integrated Circuit Science and Engineering National Exemplary School of Microelectronics University of Electronic Science and Technology of China Chengdu 610054 China. guojunxiong@***. School of Electronic Information and Electrical Engineering Institute of Advanced Study Chengdu University Chengdu 610106 China. School of Integrated Circuit Science and Engineering National Exemplary School of Microelectronics University of Electronic Science and Technology of China Chengdu 610054 China. School of Integrated Circuits Tsinghua University Beijing 100084 China. y-liu-17@***. College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing 210023 China. y-liu-17@***. School of Physics and Astronomy Beijing Normal University Beijing 100875 China. Key Laboratory of Multiscale Spin Physics Ministry of Education Beijing 100875 China. Institute of Physics Chinese Academy of Science Beijing National Laboratory of Condensed Matter Physics Beijing 100190 China. School of Materials and Energy University of Electronic Science and Technology of China Chengdu 610054 China. School of Integrated Circuit Science and Engineering National Exemplary School of Microelectronics University of Electronic Science and Technology of China Chengdu 610054 China. uestchw@***. School of Materials Science and Engineering Tsinghua University Beijing 100084 China. School of Physics and Astronomy Beijing Normal University Beijing 100875 China. jxzhang@***. Key Laboratory of Multiscale Spin Physics Ministry of Education Beijing 100875 China. jxzhang@***.

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Novel 3D bandpass frequency selective structures based on stacked planar slotlines: Modelling, design and validation 30

Novel 3D bandpass frequency selective structures based on st...

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30th Asia-Pacific microwave Conference, APMC 2018

作者： Zhang, Wanping Li, Bo Zhu, Lei Han, Ye Lyu, Yun-Peng National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing210003 China Department of Electncai and Computer Engineering University of Macau Macau999078 China

ISBN: (纸本)9784902339451

In this paper, a class of 3D bandpass frequency selective structures (FSSs) using stacked planar slotlines is proposed to exhibit bandpass filtering response of high performance. Firstly, a traditional slot-type frequency selective surface and the proposed stacked planar slotlines are introduced successively, and their operating principles are discussed to provide a comparison with each other. Then, two design examples on the basis of the stacked slotlines are presented to exhibit bandpass response with wide out-of-band rejection and high frequency selectivity, respectively. It is found that the stacked slotline structures can produce controllable multi-mode resonance and be exactly analyzed by using transmission-line theory over a wide frequency range. © 2018 IEICE

关键词： Frequency selective surfaces

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A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth 10

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Ana...

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10th International Conference on microwave and Millimeter Wave technology, ICMMT 2018

作者： Shen, Yu Zhang, Yi Yang, Lei Li, Xiaopeng Liu, Zhonghua Zhang, Yin Guo, Yufeng National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210023 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China State Key Laboratory of Millimeter Waves Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing Electronic Devices Institute China Nanjing GuoBo Electronics Co. Ltd China

ISBN: (纸本)9781538624166

In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of -5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth. © 2018 IEEE.

关键词： Bandwidth

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A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP DHBT technology 14

A 13GS/s One-Bit ADC with 18GHz Analog Bandwith Based on InP...

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14th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2018

作者： Li, Xiaopeng Wang, Zhigong Zhang, Yi Zhang, Youtao Zhang, Min Institute of RF - OE ICs Southeast University Nanjing210096 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Nanjing Electronic Devices Institute Nanjing210016 China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210046 China State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538644409

In this paper, an ultra-high-speed ultra-wide-bandwidth one-bit analog-to-digital converter (ADC) is implemented. The chip uses a latched high-sensitivity comparator to achieve one-bit quantization, and an integrated 1:8 demultiplexer to reduce the data rate of the output ports, which is helpful for system applications. The chip is implemented with a 0.7μm InP DHBT process. Measurement results show that the sampling rate of the chip is up to 13GS/s, the analog input bandwidth is greater than 18GHz, the input sensitivity is less than -25dBm, and the power consumption is 1.2W. © 2018 IEEE.

关键词： Indium phosphide

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A low noise SPAD pixel array with analog readout method

A low noise SPAD pixel array with analog readout method

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China Semiconductor technology International Conference (CSTIC)

作者： Ruiming Luo Yue Xu Bin Li College of electronic science & engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing China

ISBN: (纸本)9781509066957

This paper presents a parallel readout circuit for high density single photon avalanche diode (SPAD) pixel array. Each pixel consists of analog quenching circuit and counting circuit. Column parallel readout method is adopted and every eight columns of array pixel shares one multiplexer where the analog output signals of these pixels are selected to pass it subsequently. After that, the signals will be sent to correlated double sampling (CDS) circuit for elimination of fixed pattern noise (FPN). Then the processed signals will be inputted to off-chip high speed ADC for analog to digital conversion. The shared CDS can reduce chip area without lowering performance.

关键词： Integrated optics Optical imaging Optical sensors Photonics Capacitors CMOS integrated circuits Optical switches

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Analytical modeling for substrate effect of lateral power devices

Analytical modeling for substrate effect of lateral power de...

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China Semiconductor technology International Conference (CSTIC)

作者： Jing Chen Yufeng Guo Man Li Ling Du Xinchun Ji Changchun Zhang Jiafei Yao National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Tcchnology Nanjing China College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (纸本)9781509066957

A two-dimensional(2-D) analytical model for substrate effect of lateral power devices is developed. By solving the 2-D Poisson's equation, an analytical model is proposed and verified by the agreements between the analytical results and numerical simulation results using MEDICI. It suggests that the optimized substrate voltage modules the distributions of the surface potential and electrical field, whose effect is equivalent to changing the concentration of the drift region. As a result, the breakdown voltage is improved.

关键词： Analytical models Lead

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A 1-4 GHz Low Noise Amplifier in 0.5-μm E-Mode InGaAs pHEMT technology

A 1-4 GHz Low Noise Amplifier in 0.5-μm E-Mode InGaAs pHEMT...

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2017 7th IEEE International Symposium on microwave, Antenna, Propagation, and EMC Technologies

作者： Hairui Song Shu Yu Yufeng Guo Shanwen Hu National & Local Joint Engineering Laboratory for RF Integration and Micro-packaging Technologies College of Electronic Science and Engineering Nanjing University of Posts and Telecommunications

This paper presents a 1-4 GHz low noise amplifier（LNA） for broadband communication system. A capacitive feedback gain compensation circuit is proposed to increase the high frequency gain. The LNA exhibits a voltage gain of 20-23 d B, a noise figure of 1.8-2.3 d B during 1-4 GHz frequency *** input S11 is-13 d B10 d B and the output S22 is-18 d B10 d B. The proposed LNA is realized in 0.5-μm Gate-Length E-Mode In Ga As p HEMT Process and occupies 0.96 mm2 area. The power consumption is 250 m W with 5 V supply.

关键词： pHEMT feedback low-noise amplifier(LNA) wideband

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