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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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High Sensitivity and Ultrahigh Eqe (1040.13%) Ga2o3 Ultraviolet Photodetector by One-Step Thermal Oxidation of P-Gan Films

SSRN

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SSRN 2022年

作者： Wang, Jinjin Ji, Xueqiang Yan, Xu Lu, Chao Li, Zhitong Qi, Song Yan, Zuyong Li, Shan Qi, Xiaohui Zhang, Sai Hu, Shengrun Li, Peigang School of Integrated Circuits State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China

In this study, the Ga 2 O 3 thin films were successfully prepared by one-step thermal oxidation of p-GaN thin films, which were oxidized at 900 °C with varying oxidation times in the environment with argon-oxygen ratio of 1000. The effect of different oxidation durations on the physical properties of the Ga 2 O 3 thin films was studied, and particularly, the photoelectric performance of the Ga 2 O 3 thin films was further analyzed. The Ga 2 O 3 thin film thermally oxidized for 2 h has a single crystallographic orientation and excellent photoelectric performance. Compared with the GaN thin film, the dark current of the photodetector was approximately reduced by 2.31 × 10 4 times while the photocurrents of the device maintain the same order of magnitude, causing a large photo-to-dark current ratios (PDCRs) of 2.29 × 10 4 . The device exhibits impressive characteristics such as high responsivity of 2.13 A/W, super high external quantum efficiency (EQE) of 1040.13%, large detectivity (D*) of 1.65×10 11 Jones, and fast response speed of 0.218/0.112 s under UV light illumination of 254 nm wavelength at -5 V bias. The results indicate that the device can be used as a good candidate for high sensitivity, fast response and the high-resolution detection. © 2022, The Authors. All rights reserved.

关键词： Thin films

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High Sensitivity Ga2O3 Ultraviolet Photodetector by One-Step Thermal Oxidation of P-GaN Films

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SSRN 2022年

作者： Li, Peigang Wang, Jinjin Ji, Xueqiang Yan, Zuyong Yan, Xu Li, Zhitong Lu, Chao Qi, Song Li, Shan Qi, Xiaohui Zhang, Sai Hu, Shengrun School of Integrated Circuits State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing100876 China School of Science Lanzhou University of Technology Lanzhou730050 China College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China

Gallium oxide (Ga2O3), with an ultra-wide bandgap, is a promising semiconductor material for the manufacture of solar blind ultraviolet photodetectors. Herein, Ga2O3 thin films were successfully prepared by simpler feasible one-step thermal oxidation of p-GaN thin films, which were oxidized at 900 °C with varying oxidation times in the environment with argon-oxygen ratio of 1000. The effect of different oxidation durations on the physical properties of the Ga2O3 thin films was studied, and particularly, the photoelectric performance of the Ga2O3 thin films was further analyzed. The Ga2O3 thin film thermally oxidized for 2 h has a single crystallographic orientation and excellent photoelectric performance. Compared with the GaN thin film, the dark current of the photodetector was approximately reduced by 2.31 × 104 times while the photocurrents of the device maintain the same order of magnitude, causing a large photo-to-dark current ratios (PDCRs) of 2.29 × 104. Furthermore, the device exhibits impressive characteristics such as high responsivity of 2.13 A/W, super high external quantum efficiency (EQE) of 1040.13%, large detectivity (D) of 1.65×1011 Jones, and fast response speed of 0.218/0.112 s under UV light illumination of 254 nm wavelength at -5 V bias. The results indicate that the one-step thermal oxidation can be used as a good application for preparing the device with high sensitivity, fast response and the high-resolution detection. © 2022, The Authors. All rights reserved.

关键词： Thin films

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An Artificial Neuromuscular Synapse Based on a Ferroelectric Pb(Zr1-x Tix)O3/SiC Floating Gate Transistor

An Artificial Neuromuscular Synapse Based on a Ferroelectric...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yu Liu Lin Lin Xiang Wang Chengyan Zhong Junxiong Guo Wen Huang Yufeng Guo National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing P. R. China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu P. R. China Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University Chengdu P. R. China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

Neuromuscular junctions (NMJs) are specialized synapses that enable the efficient transduction of neural signals into muscle contractions in biological systems. Desirable artificial NMJs aim to replicate biological synaptic plasticity and high-power actuation for advanced robotics and prosthetics, but face challenges in achieving sufficient flexibility, strength, and self-contained operation. Here, we report a novel artificial NMJ based on a silicon carbide (SiC) ferroelectric field-effect transistor. By integrating a ferroelectric floating gate dielectric with a wide-bandgap SiC transistor, we achieve a wide range of non-volatile conductance modulation, enabling the emulation of long-term synaptic plasticities. We demonstrate the PZT-SiC transistor's higher threshold voltage and lower operating currents compared to traditional SiC transistors, resulting in reduced power consumption. The device exhibits excellent synaptic plasticity, with the ability to modulate synaptic weights through successive test cycles and upon pulsatile stimulation. We showcase the potential of the PZT-SiC synaptic transistor through its application in convolutional image processing, where it successfully extracts horizontal and vertical features using Sobel kernels. Our work presents a promising hardware platform for efficient and scalable artificial NMJs, paving the way for advanced biohybrid systems and neuromorphic robots.

关键词： Power demand Silicon carbide Neuromuscular Neuromorphics Feature extraction Threshold voltage Transistors Synapses Robots Prosthetics

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Study on modulation bandwidth of GaN-based micro-light-emitting diodes by adjusting quantum well structure

Research Square

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Research Square 2022年

作者： Yin, Pan Zhi, Ting Tao, Tao Liu, Xiaoyan Institute for Electric Light Sources School of Information Science and Technology Fudan University Shanghai200433 China Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing210046 China College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China

GaN-based blue micro-light-emitting diodes (µ-LEDs) with different structures were designed, of which the effect of quantum well (QW) structure on modulation bandwidth was numerically explored. By using trapezoidal QWs, the quantum-confined Stark effect (QCSE) can be reduced, leading to an enhanced electron-hole wave function overlap, thereby increasing the recombination rate and reducing the differential carrier lifetime. In addition, the improved hole transport also creates favorable conditions for shortening the differential carrier lifetime. It is found that the − 3 dB modulation bandwidth of µ-LEDs with trapezoidal QWs was higher than those of ordinary ones. In this work, the − 3 dB modulation bandwidth of µ-LEDs can be raised to 1.13 GHz at 10 kA/cm2 © 2022, CC BY.

关键词： Light emitting diodes

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Why Can One-Bit Quantization Work? A Mathematical Theory Analysis

Why Can One-Bit Quantization Work? A Mathematical Theory Ana...

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IEEE International Conference on Information Communication and Signal Processing (ICICSP)

作者： Shiqi Liu Bing Li Bo Zhao Lei Huang Weize Sun Long Chen Min Huang Weimin Bao Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China College of Electronic and Information Engineering Shenzhen University Shenzhen China National and Local Joint Engineering Laboratory of RF Integration and Micro Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China State Key Laboratory of Millimeter Waves Southeast University Nanjing China School of Electrical Engineering Southwest Jiaotong University Chengdu China Peng Cheng Laboratory Shenzhen China School of Mechanical Engineering Northwestern Polytechnical University Xian China School of Artificial Intelligence Shenzhen Polytechnic Shenzhen China

With the increase of demand in the flexibility and rapidity in different industry areas, unmanned systems are implemented under various circumstances for the convenience they bring. However, the mobility restricts the system size and power consumption. In this case, much attention has been attracted by one-bit quantization for its simplification in signal acquiring and processing. Whereas, most of existing literature focus on how to reap information from one-bit data. Much less work explains the reason why the information can be achieved from the coarsely quantized data. In this paper, the process of one-bit quantization is analytically analyzed in detailed in a mathematical angle of view, where the quantization noise resulting from the nonlinear effect is analyzed. Specifically, the one-bit quantized data is decomposed mathematically, and the components are analyzed to show the existence of the requisite signal in the quantized signal. This offers a theoretical explanation of the effectiveness of one-bit quantization.

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A Systematic Study on Electronic, Mechanical, and Thermal Transport Properties of Germanium Antimony Selenide Telluride Alloy by First-Principles Approach

SSRN

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SSRN 2022年

作者： Lian, Xiaojuan Li, Fu Liu, Peng Wan, Xiang Liu, Xiaoyan Ren, Qingying Cai, Zhikuang Wang, Ning Wang, Lei College of Integrated Circuits Science and Engineering Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China National and Local Joint Engineering Laboratory of RF Integration oand Micro-assembly Technology Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China Electrical & Electronic Laboratory Center Department of Optical Engineering College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications NO. 9 Wenyuan Road Jiangsu Nanjing210023 China School of Science Key Laboratory of High Performance Scientific Computation Xihua University Chengdu610039 China

Ge2Sb2Se4Te alloy has most recently exhibited its outstanding optical properties for non-volatile photonic storage applications, while its electrical and thermal transport properties were rarely reported, thus limiting its application versatility. To overcome above issue, we performed detailed study on the electrical, mechanical and thermal transport properties of Ge2Sb2Se4Te alloy according to first-principles calculations. The calculated results showed that, originating from the layered crystal structure of Ge2Sb2Se4Te, its Young’s modulus and shear modulus along the in-plane direction were found to be larger than those along the out-of-plane direction, which suggested more superb anti-deformation characteristics along the in-plane direction. Besides, the calculated Poisson's ratio implied that the in-plane bonding of Ge2Sb2Se4Te was mainly ionic-covalent bonding, and the out-of-plane bonding was of van der Waals (vdW) interaction character. The huge chemical bond difference between in-plane direction and out-of-plane direction led to strong phonon anharmonicity and phonon thermal transport anisotropy. Therefore, layered Ge2Sb2Se4Te exhibited low phonon group velocity and short phonon lifetime, which led to encouragingly low lattice thermal conductivities of 4.45 W/mK, 3.54 W/mK and 0.41 W/mK along the x-axis, y-axis and z-axis at 300 K, respectively. Also, calculated electronic structure revealed the metallicity character of Ge2Sb2Se4Te alloy without pronounced band gap, which made this material applicable to thermal insulation materials rather than traditional thermoelectric materials. This work was useful to promote the application of Ge2Sb2Se4Te in the field of engineering thermal management and storage devices based on the optical-thermal mechanism. © 2022, The Authors. All rights reserved.

关键词： Van der Waals forces

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Isolation Enhancement in Closely Packed Wideband Antennas Using Metasurface

Isolation Enhancement in Closely Packed Wideband Antennas Us...

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International Conference on microwave and Millimeter Wave technology Proceedings

作者： Wenlu Qiu Jinxin Li Pei Xiao Zhu Liu Jun Dong College of Computer Science and Electronic Engineering Hunan University Changsha Hunan P. R. China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing P.R. China College of Electrical and Information Engineering Hunan University Changsha Hunan P. R. China School of Physics and Electronics Hunan Normal University Changsha Hunan P. R. China College of Information Science and Engineering Hunan Normal University Changsha Hunan P. R. China

ISBN: (纸本)9781665482271

A planar anisotropic metasurface superstrate structure for isolation enhancement of two closely packed antennas is proposed in this paper. The spacing of the initial antennas is only 0.12 $\lambda_{0}$ at 3.55 GHz $(\lambda_{0}$ is the wavelength at the center frequency). The metasurface structure is consists of periodic rectangular-loop unit resonators, which are printed on the one side of 1.5 mm thick FR-4 substrate in E-plane. By placing the decoupling structure beside the initial antennas instead of putting it in the middle of the antennas, it can reject coupling wave propagation and improve isolation of two ports of the antenna further. The simulated results show that the proposed metasurface structure is able to achieve port isolation improvement at least 19.7dB and at most 31.9dB with in the operation band from 3.3 to 3.8 GHz. More importantly, the antenna still keeps good performance with $\mathrm{S} < -10$ dB and has tendency to broaden bandwidth, while the metasurface superstrate structure is loaded.

关键词： microwave antennas Mutual coupling Resonant frequency Metasurfaces Broadband antennas Resonators Antennas

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Mxene/Biomass/Chitosan Carbon Aerogel (Mbc) with Shared Cathode and Anode for the Construction of High-Efficiency Asymmetric Supercapacitor

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SSRN 2023年

作者： Zhang, Shaohui Cui, Yinhua Shi, Qingshan Liu, Zeng Lv, Jingchun Wang, Chao Xie, Xiaobao State Key Laboratory of Applied Microbiology Southern China Institute of Microbiology Guangdong Academy of Sciences Guangzhou510070 China Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronic Engineering College of Mechatronics and Control Engineering Shenzhen University Shenzhen518060 China School of Chemistry and Pharmaceutical Engineering Shandong First Medical University Shandong Academy of Medical Sciences Tai’an271016 China College of Integrated Circuit Science and Engineering & National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China College of Textiles and Clothing Yancheng Institute of Technology Yancheng224051 China

Despite the rapid development of biomass-based carbon aerogel research and specific outcomes have been accomplished, the preparation process requires to be developed further compared with other porous media such as activated carbon and graphene, and there are still many obstacles to overcome before reaching industrial production and practical applications since the competitiveness in terms of mechanical strength, adsorption capacity, and structural stability is weaker. Via using electro-static self-assembly between the negatively charged MXene nanosheets and the positively charged radish flakes infiltrated with salt solution, a strategy is proposed for the in-situ preparation of flexible MXene/biomass/chitosan aerogel (MBC) pseudo-capacitive electrode by hydrothermal methods. The electrode was drived according to the principle of concentration difference permeation (CDP) between MXene nanosheets and radish cells. Under both driving forces, the MXene nanosheets are embedded inside the radish cells. Importantly, the MBC pseudocapacitive electrode doping 6% (MBC-6) by lyophilization annealing exhibits a volumetric specific capacitance of 1801.4 mF/cm3 at a scan rate of 2 mV/s. In addition, the assembled binder-free asymmetrical supercapacitor exhibits an ultra-high volume energy density of 33.4 Wh/L, a capacitance retention rate of 82% and a long cycle life of 50000 times at a high current density of 10 mA/cm3. A plausible approach for creating energy storage devices with a high energy density and voltage window is presented in this study. © 2023, The Authors. All rights reserved.

关键词： Stability

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The growth and expansive applications of amorphous Ga2O3

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Chinese Physics B 2023年第8期 70-86页

作者：奚昭颖杨莉莉舒林聪张茂林李山史丽刘增郭宇锋唐为华 Innovation Center for Gallium Oxide Semiconductor (IC-GAO) College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies Nanjing University of Posts and Telecommunications Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Institute of Advanced Materials (IAM) Jiangsu Key Laboratory for Biosensors Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts and Telecommunications Key Laboratory of Aerospace Information Materials and Physics Nanjing University of Aeronautics and Astronautics Ministry of Industry and Information Technology

As a promising ultra-wide bandgap semiconductor material, gallium oxide（Ga2O3） is attracting extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4 e V–5.3 e V allowing for deep-ultraviolet（deepUV） detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga2O3（usually refer to as stable monoclinic β-Ga2O3）, amorphous Ga2O3（a-Ga2O3） film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga2O3extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarize several major deposition methods for a-Ga2O3films, of which the characteristics are ***, potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga2O3thin films, e.g., in photodetectors, resistive random access memories（RRAMs） and gas sensors, are represented with a fruitful discussion of their structures and operating mechanisms.

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