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Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

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Chinese Physics B 2015年第9期24卷 403-407页

作者：谢应涛欧阳世宏王东平朱大龙许鑫谭特方汉铿 Department of Electronic Engineering Center for Opto–Electronic Materials and DevicesShanghai Jiao Tong University National Engineering Laboratory for TFT-LCD Key Materials and Technologies

An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol（4-FTP） self-assembled monolayers（SAM） to chemically treat the silver source–drain（S/D） contacts while the silicon oxide（SiO2） dielectric interface is further primed by either hexamethyldisilazane（HMDS） or octyltrichlorosilane（OTS-C8）. Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPtft4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPtft4 transistors were significantly improved from 0.15 cm^2·V^-1·s^-1 to 0.91 cm^2·V^-1·s^-1.

关键词： polymeric thin film transistors orthogonal self-assembly chemically modified gate dielectric chemically modified silver bottom c

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Electrically tunable holographic polymer templated blue phase liquid crystal grating

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Chinese Physics B 2015年第6期24卷 328-333页

作者：何正红陈超平朱吉亮袁亚超李燕胡伟李潇李洪婧陆建刚苏翼凯 National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic EngineeringShanghai Jiao Tong University School of Physical Science and Technology Southwest University

In this paper, we demonstrate an alternative approach to fabricating an electrically tunable holographic polymer tem- plated blue phase liquid crystal grating. This grating is obtained by preforming a polymer template comprised of periodic fringes, and then refilling it with a blue phase liquid crystal. Compared with conventional holographic polymer dispersed liquid crystal gratings, our grating can remarkably reduce its switching voltage from 200 V to 43 V while maintaining a sub-millisecond response time. The holographic polymer templated blue phase liquid crystal （HPTBPLC） grating is free from electrode patterning, thus leading to a lower cost and more flexible applications.

关键词： holographic polymer dispersed liquid crystal blue phase phase grating

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Taking tourists for a ride (in space)

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IEEE SPECTRUM 2002年第6期39卷 30-31页

作者： Zak, A National Engineering Laboratory TFT-LCD Materials and Technologies Department of Electronic Engineering Shanghai Jiao Tong University Shanghai China

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The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices

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Journal of Semiconductors 2013年第8期34卷 56-60页

作者：施俊斐董承远戴文君吴杰陈宇霆詹润泽 Center for Opto-Electronic Materials and Devices National Engineering Laboratory for TFT-LCD Materials and TechnologiesShanghai Jiao Tong University Infovision Optoelectronics(Kunshan) Co. Ltd

The influence of radio frequency（RF） power on the properties of magnetron sputtered amorphous indium gallium zinc oxide（a-IGZO） thin films and the related thin-film transistor（tft） devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are *** results prove that the deposition rate sensitively depends on RF *** addition,the carrier concentration increases from 0.91 x 1019 to 2.15 x 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin *** evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO *** the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling *** rise in RF power can also affect the performance of a-IGZO tfts,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films.

关键词： thin-film transistors amorphous oxide semiconductors magnetron sputtering radio frequency power

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Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

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Chinese Physics B 2016年第12期25卷 514-519页

作者：曹进谢婧薇魏翔周洁陈超平王子兴田哲圭 Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University School of Materials Science and Engineering Shanghai University National Engineering Laboratory of TFT-LCD Materials and Technologies Department of Electronic EngineeringShanghai Jiao Tong University School of Green Energy & Semiconductor Engineering Hoseo University

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

关键词： quantum dot light-emitting devices white ultra-thin film charge injection

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Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

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Science China materials 2019年第6期62卷 803-812页

作者： Jinhua Ren Kaiwen Li Jianwen Yang Dong Lin Haoqing Kang Jingjing Shao Ruofan Fu Qun Zhang Department of Materials Science National Engineering Laboratory for TFT-LCD Materials and TechnologiesFudan University

Gallium-tin oxide(GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency,chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al2O3 thin film transistor(tft) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm^2 V^-1 s^-1, a subthreshold swing(SS) of 76 mV dec^-1, a threshold voltage of 0.67 V and an on-off current ratio of 1.8×10^7. The solution-processed amorphousGTO-tfts would promote the development of low-consumption, low-cost and high performance In-free tft devices.

关键词： GTO semiconductor films thin-film transistor stability Al2O3 dielectric

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Effect of active layer deposition temperature on the performance of sputtered amorphous In–Ga–Zn–O thin film transistors

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Journal of Semiconductors 2014年第1期35卷 34-39页

作者：吴杰施俊斐董承远邹忠飞陈宇霆周大祥胡哲詹润泽 Center for Opto-Electronic Materials and Devices National Engineering Lab of TFT-LCD Materials and TechnologiesShanghai Jiao Tong University Infovision Optoelectronics (Kunshan) Co. Ltd

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO （a-IGZO） thin film transistors （tfts） is investigated. With increasing annealing temperature, tft performance is firstly improved and then degraded generally. Here tfts with best performance defined as ＂optimized-annealed＂ are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding tft devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO tfts with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding tft devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.

关键词： thin film transistors amorphous oxide semiconductors magnetron sputtering deposition temperature

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Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors

Processing Effects on the Performances of Indium Zinc Bismut...

引用

International Conference on Display Technology, ICDT 2019

作者： Lin, Dong Zhang, Qun Department of Materials Science National Engineering Laboratory for TFT-LCD Materials and Technologies Fudan University Shanghai200433 China

ISBN: (纸本)9781510896161

Bismuth (Bi) has a stronger bond dissociation energy to the oxygen atom (337.2 kJ mol-1) than indium (320.1 kJ mol-1) and zinc (159.0 kJ mol-1) [1]. Therefore, Bi can serve as a carrier suppressor for indium zinc oxide (IZO). In this work, bottom-gate amorphous Bi doped IZO thin film transistors (a-IZBO tfts) were fabricated by means of radio-frequency magnetron sputtering. During the deposition, pure Ar gas with a fixed flow rate of 30 sccm was introduced into the chamber and the sputtering pressure was maintained at 0.4 Pa. Effects of experimental variables including channel layer thickness (8, 30 and 38 nm) and sputtering power (30, 50, 70 and 90 W) on the performances of a-IZBO tfts were investigated. It is found that channel layer thickness has strong impacts on the threshold voltage (Vth) and subthreshold swing (S.S.) of a-IZBO tfts. With increasing channel layer thickness, Vth shifts to the negative direction, while S.S value decreases first and then increases. Increasing sputtering power also leads to the negative shift of Vth. As sputtering power increases from 30 to 70 W, field effect mobility (μFE) increases from 18.2 to 25.4 cm2V-1s-1. However, at higher sputtering power, μFE decreases to 19.6 cm2V-1s-1. As a result, the optimum a-IZBO tfts were obtained with channel layer thickness of 30 nm and sputtering power of 70 W. © 2019, John Wiley and Sons Inc. All rights reserved.

关键词： Thin film transistors

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Erbium doped Tin-Oxide Thin-Film Transistor

Erbium doped Tin-Oxide Thin-Film Transistor

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International Conference on Display Technology, ICDT 2019

作者： Ren, Jin-Hua Li, Kai-Wen Zhang, Qun Department of Materials Science National Engineering Lab for TFT-LCD Materials and Technologies Fudan University Shanghai China

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Polarization-independent liquid-crystal phase modulator with multi-microdomain orthogonally twisted photoalignment

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Light(Advanced Manufacturing) 2023年第4期4卷 66-71页

作者： Mingyuan Tang Kai Huang Yumeng Zhang Jiangang Lu National Engineering Lab for TFT-LCD Materials and Technologies Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai200240China

Polarization-independent liquid-crystal(LC)phase modulators can significantly improve the efficiency and reduce the complexity of optical ***,achieving good polarization independence for LC phase modulators with a simple structure is difficult.A light-controlled azimuth angle(LCAA)process based on the optical rotatory effect of cholesteric liquid crystals(CLC)was developed for fabricating single-layer,multi-microdomain,orthogonally twisted(MMOT)*** developed LC phase modulator with a single-layer MMOT structure may have a low polarization dependence with a large phase *** device shows good potential for applications in optical communications,wearable devices,and displays.

关键词： Polarization independence Multi-microdomain Light-controlled azimuth angle Phase modulator

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