检索结果-内蒙古大学图书馆

Thick SU8 microstructures prepared by broadband UV lithography and the applications in MEMS devices

Optoelectronics Letters 2016年第3期12卷 182-187页

作者：李东玲温志渝尚正国佘引 National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China Micro System Reaserch CenterChongqing University

Thick SU8 microstructures with high aspect ratio and good side wall quality were fabricated by ultraviolet （UV） lithography, and the processing parameters were comprehensively studied. It proves that the adhesion of SU8 on silicon （Si） substrates is influenced by Si-OH on the surface, and can be improved by the HF treatment. Cracks and de- lamination are caused by large internal stress during fabrication process, and are significantly influenced by soft bake and post-exposure bake processes. The internal stress is reduced by a low post-exposure bake exposure tem- perature of 85 ℃ for 40 rain. A three-step soft bake enhances the reflowing ofSU8 photoresist, and results in uni- form surface and less air bubbles. The vertical side wall is obtained with the optimized exposure dose of 800 mJ/cm2 for the thickness of 160 μm. Using the optimized fabrication process combined with a proper structure design, dense SU8 micro pillars are achieved with the aspect ratio of 10 and the taper angle of 89.86°. Finally, some possible ap- plications of SU8 in micro-electromechanical system （MEMS） device are developed and demonstrated.

关键词： MEMS器件紫外光刻微结构应用微机电系统烘烤过程编写宽带

来源：评论

学校读者我要写书评

暂无评论

Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

引用

nano Research 2017年第1期10卷 157-171页

作者： Keren Dai Xiaofeng Wang Simiao Niu Fang Yi Yajiang Yin Long Chen Yue Zhang Zheng You Collaborative Innovation Center for Micro/Nano Fabrication Device and System State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua University Beijing 100084 China School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA30332-0245 USA State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering Bei)ing Municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Beijing Beijing 100083 China Broadcom Ltd. 2901 Via Fortuna #400 Austin TX 78746 USA

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists in electric circuits, and it is the most important second-order non-ideal effect that must be considered while designing a triboelectric nanogenerator （TENG） because its magnitude is comparable to the magnitude of the TENG capacitance. This paper investigates the structure and performance optimization of TENGs through modeling and simulation, taking the parasitic capacitance into account. Parasitic capacitance is generally found to cause severe performance degradation in TENGs, and its effects on the optimum matching resistance, maximum output power, and structural figures-of-merit （FOMs） of TENGs are thoroughly investigated and discussed. Optimum values of important structural parameters such as the gap and electrode length are determined for the different working modes of TENGs, systematically demonstrating how these optimum structural parameters change as functions of the parasitic capacitance. Additionally, it is demonstrated that the parasitic capacitance can improve the height tolerance of the metal freestanding-mode TENGs. This work provides a theoretical foundation for the structure and performance optimization of TENGs for practical applications and promotes the development of mechanical energy-harvesting techniques.

关键词： triboelectric nanogenerator parasitic capacitance figure of merit structure optimization performance optimization

来源：评论

学校读者我要写书评

暂无评论

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

引用

Optoelectronics Letters 2016年第4期12卷 285-289页

作者：李东玲冯小飞温志渝尚正国佘引 National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Chongqing University Chongqing 400030 China Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China Chongqing University Chongqing 400030 China No.24 Reaearch Institute of China Electronics Technology Group Corporation Chongqing 400060 China

Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.

关键词： Deposition Deposition rates Integrated circuits MEMS Nitrides Optical properties Plasma CVD Refractive index Silicon nitride Stresses Vapor deposition

来源：评论

学校读者我要写书评

暂无评论

Flexible and transparent triboelectric nanogenerator based on high performance well-ordered porous PDMS dielectric film

引用

nano Research 2016年第12期9卷 3714-3724页

作者： Xianming He Xiaojing Mu Quan Wen Zhiyu Wen Jun Yang Chenguo Hu Haofei Shi Department of Applied Physics Chongqing University Chongqing 400044 China Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing 400044 China Microsystem Research Center Chongqing University Chongqing 400044 China Key Laboratory of Multi-Scale Manufacturing Technology Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences Chongqing 400714 China

A flexible and transparent triboelectric nanogenerator （FT-TENG） has great potential for application in self-powered biosensor systems, electronic skin and wearable electronic devices. However, improving the output performance with little damage to its optical properties is challenging. Herein, we have developed an FT-TENG that has a well-ordered nest-like porous polydimethylsiloxane （NP-PDMS） film and graphene transparent electrodes. The NP-PDMS film with ordered pores is fabricated by hydrochloric acid etching of 500 nm sized ZnO spheres made of aggregated nanoparticles, having a light transmittance of 81.8% and a water contact angle of 118.62°. The FT-TENG based on the NP-PDMS film with a porosity of 12%, gives a maximum output of 271 V and 7.8 μA, which are respectively, 3.7 and 2.1-fold of those of a TENG with a flat PDMS film. The peak output power reaches 0.39 mW with a load resistance of 9.01 MΩ. The dielectric constant and effective thickness of the NP-PDMS film and the capacitance and charge transfer of the FT-TENG are systematically investigated. This work provides a novel and effective method to enhance the performance of FT-TENGs with little damage to their optical properties.

关键词： porouspolydimethylsiloxane（PDMS） surface charge density nanogenerator flexibility transparent electrode

来源：评论

学校读者我要写书评

暂无评论

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO nanowires

引用

nano-micro Letters 2016年第3期8卷 247-253页

作者： Zhi Tao Yi-an Huang Xiang Liu Jing Chen Wei Lei Xiaofeng Wang Lingfeng Pan Jiangyong Pan Qianqian Huang Zichen Zhang School of Electronic Science and Engineering Southeast University State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano Fabrication Device and System Department of Precision Instrument Tsinghua University School of Information and Communication Engineering Beijing University of Posts and Telecommunications Institute of Semiconductors Chinese Academy of Science

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

关键词： Thin-film transistor Quantum dots Reduced graphene oxide ZnO nanowires

来源：评论

学校读者我要写书评

暂无评论

Narrow photonic-plasmonic resonances in petal-like capped-nanopillar resonators for real-time, ultrasensitive colorimetric sensing 20

Narrow photonic-plasmonic resonances in petal-like capped-na...

引用

20th International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2016

作者： Fan, Jiaorong Wu, Wengang Zhu, Jia Yun, Huang National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing100871 China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9780979806490

A new type of colorimetric sensing device composed of metallic nanopetal-capped-nanopillar array metasurface is reported. The device exhibits narrowband and harmonic reflection feature, and thus has excellent ability to produce vivid and bright colors. This is due to the effect of surface-plasmon (SP) coupling in the array of three-dimensional plasmonic petal-capped-pillar nanoresonators. We employ the device as an ultrasensitive colorimetric plasmon-resonance sensor to detect different refractive-index solutions with much striking color differences. The metasurface-based sensor can visually detect the surrounding medium in real-time with refractive index resolution of 2x10-3 units.

关键词： Refractive index

来源：评论

学校读者我要写书评

暂无评论

Fabrication of aluminum nitride films by reactive pulse DC magnetron sputtering for vibration energy harvester

引用

key Engineering Materials 2015年 645卷 1133-1138页

作者： Shang, Zhengguo Li, Dongling Wang, Shengqiang National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing China Microsystem Research Center Chongqing University Chongqing China

Aluminum nitride(AlN) film as a piezoelectric material has been used widely, particularly in vibration energy harvester due to its unique and enhanced properties such as high temperature resistance and compatibility with CMOS processes. In this work, AlN film with (002) preferred orientation was prepared on silicon wafers by pulse DC reactive magnetron sputtering(RMS), and the properties such as peak intensity, full width at half maximum (FWHM) and surface morphology were investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The preferred orientation was found to be sensitive to deposition conditions such as gas flow rate, power, bottom electrodes materials and substrates temperature. The results shows that the intensity was 1.1×105 counts, the FWHM was 1.9° when the temperature was 260°C. The film was used to fabricate the vibrated energy harvester successful and the power density reached about 3000uW/cm3 at the vibration frequency under 1g acceleration. © 2015 Trans Tech Publications, Switzerland.

关键词： Magnetron sputtering

来源：评论

学校读者我要写书评

暂无评论

Design and simulation of corrugated diaphragm applied to the MEMS fiber optic pressure sensor

Design and simulation of corrugated diaphragm applied to the...

引用

IEEE International Conference on nano/micro Engineered and Molecular systems (NEMS)

作者： Yiming Gui Yangxi Zhang Guandong Liu Yilong Hao Chengchen Gao Institute of Microelectronics Peking University China National Key Laboratory of Science and Technology on Micro/Nano Fabrication China Innovation Center for Micro-Nano-electronics and Integrated System China Device and System Collaborative Innovation Center for Micro/Nano Fabrication Beijing China

ISBN: (纸本)9781509019489

In this paper, we propose a corrugated diaphragm applied to the fiber optic pressure sensor which needs a wide sensing range and a large deflection. The corrugated diaphragm can effectively improve the sensitivity of the sensor has been proved by ANSYS simulation. The stress concentration is weakened after the silicon is chamfered into corrugated diaphragm by isotropic etching process. The sensitivity of the corrugated diaphragm can reach to 0.44μ m/MPa which is two times larger than that of the same size planar diaphragm. The maximum sensing stress is up to 14MPa.

关键词： Stress Pressure sensors Sensitivity Optical fibers micromechanical devices Silicon

来源：评论

学校读者我要写书评

暂无评论

Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme

Four-step FBAR Filters Design Method and SOI BOX Buffered Vi...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： GAO Yang CAI Xun HE Xuefeng Institute of Electronic Engineering China Academy of Engineering Physics State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsCAS School of Information Engineering Southwest University of Science and Technology National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator(FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active area of each FBAR unit. To get this, we made the resonance area value of series FBAR units and the ratio of resonance area value of parallel FBAR units and series FBAR units into two types of optimization parameters reasonably. Taking the given insertion loss and out-of-band rejection of filter as the optimization objective, we obtained the optimized values by the algorithm based on gradient in ADS software. The last step 4 aiming at minimizing filter passband ripple. In the design case, this aim is fulfilled by a novel FBARs' electrode layer thickness adjusting method, and intentionally slightly mismatches the series resonant frequency of the series FBAR units with the parallel resonant frequency of the parallel FBAR units. As in the design case results, a only 300 nm thick SiO 2 support layer need to survive the backside via-hole etching micro-fabrication process, so we proposed a buried oxide layer(BOX) buffered 2-step via-hole etching scheme, which taking advantage of the etching self-stop characteristic of BOX. Design case results show that insertion loss of the Rx filter is 0.6 d B, rejection in Tx frequency band is 40.4 d B and passband ripple is 0.4 d B. Thus we validate the feasibility of the design method.

关键词： Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme filter SOI

来源：评论

学校读者我要写书评

暂无评论

Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

Safety Analysis on a Novel Solid State Thermal Mechanical Di...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： JIA Le GAO Yang WANG Yu-hang LV Jun-guang School of Information Engineering Southwest University of Science and Technology Institute of Electronic Engineering China Academy of Engineering Physics National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University State Key Laboratory of Particle Detection and Electronics Institute of High Energy Physics CAS

In order to strengthen safety in abnormal environment, we analyze safety on the Solid State Thermal Mechanical Discriminator(SSTMD). Firstly, we calculate the number of Thermo-Mechanical Switches(TMSs) by means of a method with probability theory when the probability of unintentional unlock on the SSTMD is less than 10-6. Then the probability of safety failure on the SSTMD is estimated by analyzing the relationship between probability of a TMS from OFF state to ON state and temperature in abnormal high temperature environment. We put forward two design criteria for the layout of the SSTMD by analyzing working principle of the Trap TMSs played a role as intrinsic thermal weaklink to reduce the probability of safety failure on SSTMD in abnormal high temperature environment. There are two design rules to enhance the thermal weaklink effect. Firstly, TMSs can be classed as two groups: the Route TMSs and the Trap TMSs, and those two class TMSs should be evenly layout as far as possible, to obtain equal probability of contacting hotspot for the Trap TMSs to work in abnormal high-temperature environment. Secondly, we choose lower melting point of materials on the Trap TMSs to make them preemptively switch to the ON state before the Route TMSs. Additionally, we find the intrinsic shock weaklink effect in the Route TMSs, and enhanced this beneficial effect by etching an annular groove on the back of insulating film membrane of the Route TMSs, to ensure the safety of the SSTMD in abnormal shock/vibration environments. By revealing and taking advantage of those two weaklink effects, we get a novel SSTMD architecture with integrated thermal and shock weaklink functions, which would be quite suitable for the high consequence system applications.

关键词： TMS Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：