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Physical Review Letters 2023年第26期130卷 266303-266303页

作者： Guoqiang Xu Xue Zhou Ying Li Qitao Cao Weijin Chen Yunfeng Xiao Lan Yang Cheng-Wei Qiu Department of Electrical and Computer Engineering National University of Singapore Kent Ridge 117583 Republic of Singapore School of Computer Science and Information Engineering Chongqing Technology and Business University Chongqing 400067 China Interdisciplinary Center for Quantum Information State Key Laboratory of Extreme Photonics and Instrumentation ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou 310027 China International Joint Innovation Center Key Lab of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang The Electromagnetics Academy at Zhejiang University Zhejiang University Haining 314400 China State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics Peking University100871 Beijing China Department of Electrical and Systems Engineering Washington University St. Louis Missouri 63130 USA

Exceptional point (EP) has been captivated as a concept of interpreting eigenvalue degeneracy and eigenstate exchange in non-Hermitian physics. The chirality in the vicinity of EP is intrinsically preserved and usually immune to external bias or perturbation, resulting in the robustness of asymmetric backscattering and directional emission in classical wave fields. Despite recent progress in non-Hermitian thermal diffusion, all state-of-the-art approaches fail to exhibit chiral states or directional robustness in heat transport. Here we report the first discovery of chiral heat transport, which is manifested only in the vicinity of EP but suppressed at the EP of a thermal system. The chiral heat transport demonstrates significant robustness against drastically varying advections and thermal perturbations imposed. Our results reveal the chirality in heat transport process and provide a novel strategy for manipulating mass, charge, and diffusive light.

关键词： Diffusion Heat transfer Metamaterials Non-Hermitean systems

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Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints

arXiv

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arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

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Structural disorder by octahedral tilting in inorganic halide perovskites: New insight with Bayesian optimization

arXiv

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arXiv 2023年

作者： Li, Jingrui Pan, Fang Zhang, Guo-Xu Liu, Zenghui Dong, Hua Wang, Dawei Jiang, Zhuangde Ren, Wei Ye, Zuo-Guang Todorović, Milica Rinke, Patrick Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education International Center for Dielectric Research School of Electronic Science and Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi’an Jiaotong University Xi’an710049 China MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage School of Chemistry and Chemical Engineering Harbin Institute of Technology Harbin150001 China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Shaanxi Key Lab of Information Photonic Technique School of Electronic Science and Engineering Xi’an Jiaotong University Xi’an710049 China School of Microelectronics Key Lab of Micro-Nano Electronics and System Integration of Xi’an City Xi’an Jiaotong University Xi’an710049 China State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi’an Jiaotong University Xi’an710049 China Department of Chemistry and 4D LABS Simon Fraser University British Columbia BurnabyV5A 1S6 Canada Department of Mechanical and Materials Engineering University of Turku TurkuFI-20014 Finland Department of Applied Physics Aalto University AALTO P.O.Box 11100 FI-00076 Finland

Structural disorder is common in metal-halide perovskites and important for understanding the functional properties of these materials. First-principles methods can address structure variation on the atomistic scale, but they are often limited by the lack of structure-sampling schemes required to characterize the disorder. In this work, structural disorder in the benchmark inorganic halide perovskites CsPbI3 and CsPbBr3 is computationally studied in terms of the three octahedral-tilting angles. The consequent variation in energetics and properties are described by three-dimensional potential-energy surfaces (PESs) and property landscapes, delivered by Bayesian Optimization Structure Search method with integrated density-functional-theory (DFT) calculations. The rapid convergence of the PES with about 200 DFT data points in three-dimensional searches demonstrates the power of active learning and strategic sampling with Bayesian optimization. Further analysis indicates that disorder grows with increasing temperature, and reveals that the materials band gap at finite temperatures is a statistical mean over disordered structures. © 2023, CC BY.

关键词： Lead compounds

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In-Situ Monitoring of Quorum Sensing Signaling Molecules in Bacterial Biofilms by a SERS Chip with Array micro-Chambers

SSRN

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SSRN 2023年

作者： Liu, Lulu Ma, Wenrui Tan, Haolan Ge, Chuang Zhang, Bei Wang, Chunyan Zhang, Yang Xu, Yi Key Disciplines Lab of Novel Micro-Nano Devices and System Technology Key Laboratory of Optoelectronic Technology and Systems Ministry of Education Chongqing University Shapingba Chongqing400044 China College of Chemistry and Chemical Engineering Chongqing University of Science and Technology Chongqing401331 China School of Chemistry and Chemical Engineering Chongqing University Shapingba Chongqing400044 China School of Optoelectronic Engineering Chongqing University Shapingba Chongqing400044 China Key Laboratory of Translational Research for Cancer Metastasis and Individualized Treatment Chongqing University Cancer Hospital Chongqing400030 China College of Pharmacy and Bioengineering Chongqing University of Technology Chongqing400054 China

The monitoring of signaling molecules related quorum sensing (QS) in bacterial biofilms was crucial for the better understanding how QS influenced the biofilm formation. In this paper, a SERS microfluidic chip integrated with array micro-chambers and nano-silver substrate was fabricated for the monitoring of QS signaling molecules in Pseudomonas aeruginosa biofilms. The self-assembled nano-silver substrate showed good homogeneity and stability with the enhancement factor up to 1.84×108, which guaranteed the detection sensitivity of signaling molecules. The dynamic change of pyocyanine, as an important signal molecule, was monitored during the growth of Pseudomonas aeruginosa biofilms by comparing the peak intensity at 1350 cm-1. By using the same chip, the inhibitory effects of different drugs including conventional antibiotics (ceftazidime), as well as natural antibacterial components (curcumin and tannic acid) were also investigated. The order of inhibition effect on pseudomonas aeruginosa biofilms growth was in turns ceftazidime > curcumin > tannic acid. The secretion period of pyocyanin was also affected by drugs treatment. Furthermore, pyocyanine secreted by Pseudomonas aeruginosa were confirmed by mass spectrometry (MS) and the concentration relationship obtained by MS/MS was consistent with the SERS detection. The proposed method based on the SERS chip for monitoring QS in bacterial biofilms had advantages of in-situ detection, flexibility and efficiency. © 2023, The Authors. All rights reserved.

关键词： Mass spectrometry

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Compare of three micropattern methods for high-throughput cell arrangement 21

Compare of three micropattern methods for high-throughput ce...

引用

21st International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2017

作者： Hun, Tingting Liu, Yaoping Guo, Yechang Liu, Xiaoyi Wang, Wei Sun, Yan Fan, Yubo School of Biological Science and Medical Engineering Beihang University Key Laboratory for Biomechanics and Mechanobiology of Ministry of Education Beijing100191 China Institute of Microelectronics Peking University Beijing100871 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing100871 China Innovation Center for Micro-Nano-electronics and Integrated System Beijing100871 China State Key Laboratory of Transducer Technology Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)9780692941836

Investigations on single-cell level are significant in cellular researches, and the captured of single cell have been reported by many researchers. However, there is still a lack of effective methods to realize high-throughput cell capture and arrangement simultaneously. In this paper, we compared three micropattern methods for high-throughput cell capture and arrangement, and we found a micropore-arrayed membrane based micropattern method could reach efficiency higher than 90%. © 17CBMS-0001.

关键词： Cytology

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Properties of metal–insulator–metal waveguide loop reflector

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Chinese Physics B 2019年第9期28卷 249-252页

作者： Hu Long Xuan-Ke Zeng Yi Cai Xiao-Wei Lu Hong-Yi Chen Shi-Xiang Xu Jing-Zhen Li Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology College of Electronic Science and TechnologyShenzhen UniversityShenzhen 518060China Key Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province College of Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

A new type and easy-to-fabricate metal-insulator-metal(MIM) waveguide reflector based on Sagnac loop is designed and *** transfer matrix theoretical model for the transmission of electric fields in the reflector is established,and the properties of the reflector are studied and *** simulation results indicate that the reflectivity strongly depends on the coupling splitting ratio determined by the coupling ***, different reflectivities can be realized by varying the coupling *** an optimum coupling length of 750 nm, the 3-dB reflection bandwidth of the MIM waveguide reflector is as wide as 1.5 μm at a wavelength of 1550 nm, and the peak reflectivity and isolation are 78%and 23 dB, respectively.

关键词： surface plasmon polaritons waveguide reflector

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Flexible Piezo-Mems Fabrication Process Based on Thinned Piezoelectric Thick Film

Flexible Piezo-Mems Fabrication Process Based on Thinned Pie...

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IEEE International Conference on micro Electro Mechanical systems

作者： Zhiran Yi Wenming Zhang Bin Yang The National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University Shanghai CHINA The State Key Laboratory of Mechanical System and Vibration School of Mechanical Engineering Shanghai Jiao Tong University Shanghai CHINA

ISBN: (数字)9781665419123

ISBN: (纸本)9781665430241

High-temperature sintering is critical fabrication process for piezoelectric ceramics to reach a high quality. Generally, the sintering process is not employed in the fabrication process of piezoelectric thin film due to the low melting temperature bonding components or substrates. Piezoelectric thick film process based on mechanical thinning technology is becoming a key technology to develop high-quality piezoelectric ceramics in piezo-MEMS devices. Here, piezoelectric film transferring process, bonding process and laser cutting technology are employed for the flexible piezo-MEMS fabrication process, which is promising to develop high performance flexible piezo-MEMS devices, such flexible piezoelectric tactile sensors, flexible piezoelectric energy harvesters or flexible piezoelectric pressure sensors.

关键词： Fabrication Thick films Ceramics Piezoelectric devices Bonding Surface treatment Substrates

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Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

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arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

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High-throughput prediction of the carrier relaxation time via data-driven descriptor

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npj Computational Materials 2020年第1期6卷 435-440页

作者： Zizhen Zhou Guohua Cao Jianghui Liu Huijun Liu Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education and School of Physics and Technology Wuhan UniversityWuhan 430072China Center for Quantum Materials and Devices College of PhysicsChongqing UniversityChongqing 401331China International Center for Quantum Design of Functional Materials(ICQD) Hefei National Laboratory for Physical Sciences at the Microscaleand Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefeiAnhui 230026China

It has been demonstrated that many promising thermoelectric materials,such as tetradymite compounds are also threedimensional topological *** both cases,a fundamental question is the evaluation of carrier relaxation time,which is usually a rough task due to the complicated scattering *** works using the simple deformation potential theory or considering complete electron-phonon coupling are,however,restricted to small *** adopting a data-driven method named SISSO(Sure Independence Screening and Sparsifying Operator)with the training data obtained via deformation potential theory,we propose an efficient and physically interpretable descriptor to evaluate the relaxation time,using tetradymites as prototypical *** any input from first-principles calculations,the descriptor contains only several elemental properties of the constituent atoms,and could be utilized to quickly and reliably predict the carrier relaxation time of a substantial number of tetradymites with arbitrary stoichiometry.

关键词： relaxation arbitrary utilized

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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