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Structure,electric,and dielectric properties of(Sr_(0.7)Ca_(0.3))_(1.02)(Zr_(0.95−x)Ti_(0.05)Mn_(x))O_(3+δ)ceramics for BME-MLCCs application

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Journal of Advanced Ceramics 2024年第9期13卷 1382-1393页

作者： Qingyang Pang Ying Chen Zhixiang Wang Bin Zhou Xin Li Chao Mu Guangping Gu Genshui Wang Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 201800China University of Chinese Academy of Sciences Beijing 100049China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Micro-system and Information TechnologyChinese Academy of SciencesShanghai 200050China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China School of Chemistry and Materials Science Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China China Zhenhua Xinyun Electronic Components Co. Ltd.Guiyang 550018China

Zirconate-based dielectric ceramics are potential materials for base metal electrode multilayer ceramic capacitors(BME-MLCCs)due to their exceptional chemical and thermal stability,as well as excellent dielectric *** this work,(Sr_(0.7)Ca_(0.3))1.02(Zr_(0.95−x)Ti_(0.05)Mn_(x))O_(3)+δ(SCZTM,0≤x≤0.05)ceramics with two coexisting phases were prepared using a solidstate reaction method in a reducing *** study investigates the impact of Mn doping on sintering temperature,microstructure,and electrical properties of SCZTM *** doping can reduce the sintering temperature from 1450 to 1300℃.The impact of Mn doping on the structure and phonon vibration is minimal,resulting in a negligible effect on the intrinsic *** valence states of Mn ions and defects were characterized by X-ray photoelectron spectroscopy(XPS)and thermally stimulated depolarization current(TSDC)*** results demonstrate the significant role of Mn doping in nonintrinsic *** to the decrease in the concentration of oxygen vacancies(V_(O)),SCZTM(x=0.01)ceramics exhibit attractive properties:resistivity(ρ)=8.93×10^(14)Ω·cm,dielectric constant(ε_(r))=36.16,dielectric loss(tanδ)=2.43×10^(–4),temperature dependence of dielectric constant(τ_(ε))=15.44 ppm/℃(@−55–200℃,1 MHz),Q×f=30,257 GHz(@6.12 GHz),and temperature coefficient of resonant frequency(τf)=–9.9 ppm/℃.SCZTM(x=0.01)ceramic powders were used to successfully fabricate Ni-based multilayer ceramic capacitors(MLCCs)with a high insulation resistance of IR≥39.6 TΩ,an ultralow dielectric loss of tanδ=0.2×10^(–4),and a wide operating temperature range(temperature coefficient of capacitance(T_(cc))=10.88 ppm/℃,@−55–200℃,1 MHz).SCZTM ceramics exhibit properties that make them suitable for use as BMEMLCC materials with potential market applications.

关键词： dielectric properties reducing atmosphere defects multilayer structure

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Magnetic phase transitions in the triangular-lattice spin-1 dimer compound K2Ni2(SeO3)3

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Physical Review B 2024年第21期109卷 214430-214430页

作者： Lei Yue Ziyou Lu Kun Yan Le Wang Shu Guo Ruixin Guo Peng Chen Xiaobin Chen Jia-Wei Mei Department of Physics School of Science and State Key Laboratory on Tunable Laser Technology and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Shenzhen Institute for Quantum Science and Engineering International Quantum Academy Shenzhen 518048 China Dongguan Guangdong 523808 China Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices

In our study, we conduct magnetization and heat capacity measurements to investigate field-induced magnetic phase transitions within the newly synthesized compound K2Ni2(SeO3)3, a spin-1 dimer system arranged on a triangular lattice. From our first-principles simulations, we determine that the spin system in K2Ni2(SeO3)3 can be represented as a two-dimensional triangular-lattice spin-1 dimer model, including an intra-dimer exchange of J1=0.32meV, an inter-dimer exchange of J2=0.79meV, and an easy-axis anisotropy of D=0.14meV. The presence of easy-axis magnetic anisotropy explains the distinct magnetic phase diagrams observed under c-axis directional and in-plane magnetic fields. Notably, our investigation unveils a two-step phase transition with the magnetic field aligned with the c direction. Our findings yield valuable insights into the magnetic phase transitions inherent to geometrically frustrated magnetic systems featuring dimer structures.

关键词： Frustrated magnetism Magnetic phase transitions Triangular lattice Magnetization measurements Specific heat measurements X-ray diffraction

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Tunable unconventional integer quantum Hall effect in two-dimensional Dirac-Weyl systems

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Physical Review B 2024年第8期109卷 L081404-L081404页

作者： Y. J. Jin Y. Xu X. L. Xiao Z. J. Chen H. Xu Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials School of Physics South China Normal University Guangzhou 510006 China Department of Physics & Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 People's Republic of China Institute of Micro/Nano Materials and Devices Ningbo University of Technology Ningbo 315016 Zhejiang People's Republic of China Department of Physics Chongqing University Chongqing 400044 People's Republic of China Songshan Lake Materials Laboratory Dongguan 523808 People's Republic of China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong) Shenzhen 518045 People's Republic of China

Two-dimensional (2D) Dirac semimetals possess intriguing properties due to their low-energy excitations behaving like Dirac fermions. A hallmark of these materials is the unconventional integer quantum Hall effect (IQHE), originating from the quantized Berry phase of Dirac fermions. Herein, using symmetry analysis, tight-binding models, and numerical calculations, we reveal 2D Dirac-Weyl fermions in inversion symmetry breaking systems that exhibit tunable unconventional IQHE. These unique 2D fermions are characterized by a pair of helical edge states related by time-reversal symmetry T, which connect the projections of a Dirac point and two separate Weyl nodes, indicating that the Dirac and Weyl points are interconnected as a whole. We show that these 2D Dirac-Weyl fermions exhibit a tunable unconventional IQHE, featuring a Hall plateau sequence shifted by three units of 2e2h. The distance between adjacent quantized Hall plateaus can be adjusted by strain, which is a unique feature that distinguishes from what is observed in graphene. Through first-principles calculations, we identify an ideal candidate material for hosting 2D Dirac-Weyl fermions, offering a promising avenue for experimental verification. Our findings open up a door to exploring unconventional IQHE in condensed-matter systems beyond graphene.

关键词： Integer quantum Hall effect Landau levels Symmetry protected topological states Tight-binding model k dot p method

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Quasi bound states in the continuum empowered intrinsically chiral emission

Quasi bound states in the continuum empowered intrinsically ...

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Frontiers in Optics, FiO 2022

作者： Zhang, Xudong Liu, Yilin Han, Jiecai Kivshar, Yuri Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin150080 China Nonlinear Physics Center Research School of Physics Australian National University CanberraACT2601 Australia Pengcheng Laboratory Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

By utilizing the physics of chiral quasi-bound states in the continuum (BICs) which breaking out-of-plane symmetry by slant meta-atoms, an ultracompact source with controllable spectrum, radiation pattern and spin ang...

ISBN: (纸本)9781557528209

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Consecutive topological transitions of helical Fermi arcs at saddle points in CoSi

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science China(Physics,Mechanics & Astronomy) 2022年第5期65卷 97-103页

作者： Zhicheng Rao Shangjie Tian Shunye Gao Quanxin Hu Wenhui Fan Jierui Huang Cenyao Tang Yaobo Huang Hechang Lei Yujie Sun Tian Qian Hong Ding Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices Renmin University of ChinaBeijing 100872China Shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201210China Songshan Lake Materials Laboratory Dongguan 523808China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China Department of Physics South University of Science and TechnologyShenzhen 518055China

The CoSi family hosts unconventional topological nodes with nonzero Chern *** nontrivial topology is manifested by conspicuous surface Fermi arcs connecting surface projections of the ***,using angle-resolved photoemission spectroscopy,we have systematically investigated the(001)surface states of pristine and Ni-doped Co *** surface states form saddle-like band structures at/near the time-reversal invariant point near the Fermi *** Fermi arcs undergo consecutive Lifshitz transitions at the saddle points X,leading to changes of the Fermi arc *** the density of states has a van Hove singularity at the saddle points,exotic many-body physical phenomena may emerge accompanied by the topological transitions of surface Fermi arcs.

关键词： topological transition Fermi arcs saddle point

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Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme

Four-step FBAR Filters Design Method and SOI BOX Buffered Vi...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： GAO Yang CAI Xun HE Xuefeng Institute of Electronic Engineering China Academy of Engineering Physics State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsCAS School of Information Engineering Southwest University of Science and Technology National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator(FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active area of each FBAR unit. To get this, we made the resonance area value of series FBAR units and the ratio of resonance area value of parallel FBAR units and series FBAR units into two types of optimization parameters reasonably. Taking the given insertion loss and out-of-band rejection of filter as the optimization objective, we obtained the optimized values by the algorithm based on gradient in ADS software. The last step 4 aiming at minimizing filter passband ripple. In the design case, this aim is fulfilled by a novel FBARs' electrode layer thickness adjusting method, and intentionally slightly mismatches the series resonant frequency of the series FBAR units with the parallel resonant frequency of the parallel FBAR units. As in the design case results, a only 300 nm thick SiO 2 support layer need to survive the backside via-hole etching micro-fabrication process, so we proposed a buried oxide layer(BOX) buffered 2-step via-hole etching scheme, which taking advantage of the etching self-stop characteristic of BOX. Design case results show that insertion loss of the Rx filter is 0.6 d B, rejection in Tx frequency band is 40.4 d B and passband ripple is 0.4 d B. Thus we validate the feasibility of the design method.

关键词： Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme filter SOI

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Fast dual-beam alignment method for stimulated emission depletion microscopy using aggregation-induced emission dye resin

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Chinese Optics Letters 2022年第11期20卷 90-94页

作者： Miao Zhao Fengming Liu Yang Yu Xinjun Guo Hao Ruan Jing Wen Laboratory of Micro-Nano Optoelectronic Materials and Devices Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China National Center for Protein Science Shanghai Shanghai 200120China Engineering Research Center of Optical Instrument and Systems Ministry of Education and Shanghai Key Laboratory of Modern Optical SystemUniversity of Shanghai for Science and TechnologyShanghai 200093China

A stimulated emission depletion is capable of breaking the diffraction limit by exciting fluorescent molecules with a solid Gaussian beam and quenching the excited molecules with another donut beam through stimulated *** coincidence degree of these two beams in three dimensions will significantly influence the spatial resolution of the ***,the conventional alignment approach based on raster scanning of gold nanoparticles by the two laser beams separately suffers from a mismatch between fluorescence and scattering *** circumvent the above problems,we demonstrate a fast alignment design by scanning the second beam over the fabricated sample,which is made of aggregation-induced emission(AIE)dye *** relative positions of solid and donut laser beams can be represented by the fluorescent AIE from the labeled spots in the dye *** design achieves ultra-high resolutions of 22 nm in the x/y relative displacement and 27 nm in the z relative displacement for fast spatial matching of the two laser *** study has potential applications in scenarios that require the spatial matching of multiple laser beams,and the field of views of different objectives,for example,in a microscope with high precision.

关键词： nanophotonics stimulated emission depletion microscope aggregation-induced emission dual-beam alignment

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Reliable deposition of ultra-thin parylene

Reliable deposition of ultra-thin parylene

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IEEE International Conference on micro Electro Mechanical systems

作者： Wei Wang Dongyang Kang Wangzhi Dai Yu-Chong Tai Electrical Engineering Caltech CA USA National Key Laboratory of Science and Technology on Micro/Nano Fabrication Innovation Center for Micro-Nano-electronics and Integrated System Beijing China Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781509006090

This paper reports a novel and reliable process to prepare ultra-thin parylene film based on a principle combining both molecular effusion and diffusion. For the first time, a technique for the deposition of parylene film thinner than 20 nm in a highly controllable and repeatable way is developed. Parylene films with various thicknesses could also be prepared in a single deposition run by using this method. This technique holds promising potentials in extensive applications, such as protection/dielectric layer for needle electrodes and flexible electronics, semi-permeable membrane, and other polymer engineering.

关键词： Decision support systems micromechanical devices

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Two-dimensional Dirac-line semimetals resistant to strong spin–orbit coupling

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science Bulletin 2022年第19期67卷 1954-1957页

作者： Deping Guo Pengjie Guo Shijing Tan Min Feng Limin Cao Zheng-Xin Liu Kai Liu Zhong-Yi Lu Wei Ji Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China Songshan Lake Materials Laboratory Dongguan 523808China Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230026China School of Physics and Technology and Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of Education Wuhan UniversityWuhan 430072China Institute for Advanced Studies Wuhan UniversityWuhan 430072China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China

Topological materials have attracted extensive attention in condensed matter physics because of their exotic physical properties and promising potential *** the bulk gap of an insulator closes at certain nodal points or lines in the Brillouin zone(BZ),the resultant gapless phase is known as the topological semimetal(TSM)[1].Dirac nodal line semimetals(DNLSMs)[2,3]have been sought as novel quantum materials presenting quantum anomalies[4,5].The DNLSMs against spin-orbit coupling(SOC)were discovered in several three-dimensional(3D)bulk materials[6–8].Flourishing two-dimensional(2D)van der Waals(vdW)materials are,in comparison with their 3D counterparts,easier to experimentally measure and ***,2D materials have one less dimension of translation symmetry operation,and the corresponding symmetry operations and groups are significantly reduced,narrowing the range of candidate structures.

关键词：狄拉克自旋轨道耦合费米能级半金属同素异形体输运性质对称点二维材料

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Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

Safety Analysis on a Novel Solid State Thermal Mechanical Di...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： JIA Le GAO Yang WANG Yu-hang LV Jun-guang School of Information Engineering Southwest University of Science and Technology Institute of Electronic Engineering China Academy of Engineering Physics National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University State Key Laboratory of Particle Detection and Electronics Institute of High Energy Physics CAS

In order to strengthen safety in abnormal environment, we analyze safety on the Solid State Thermal Mechanical Discriminator(SSTMD). Firstly, we calculate the number of Thermo-Mechanical Switches(TMSs) by means of a method with probability theory when the probability of unintentional unlock on the SSTMD is less than 10-6. Then the probability of safety failure on the SSTMD is estimated by analyzing the relationship between probability of a TMS from OFF state to ON state and temperature in abnormal high temperature environment. We put forward two design criteria for the layout of the SSTMD by analyzing working principle of the Trap TMSs played a role as intrinsic thermal weaklink to reduce the probability of safety failure on SSTMD in abnormal high temperature environment. There are two design rules to enhance the thermal weaklink effect. Firstly, TMSs can be classed as two groups: the Route TMSs and the Trap TMSs, and those two class TMSs should be evenly layout as far as possible, to obtain equal probability of contacting hotspot for the Trap TMSs to work in abnormal high-temperature environment. Secondly, we choose lower melting point of materials on the Trap TMSs to make them preemptively switch to the ON state before the Route TMSs. Additionally, we find the intrinsic shock weaklink effect in the Route TMSs, and enhanced this beneficial effect by etching an annular groove on the back of insulating film membrane of the Route TMSs, to ensure the safety of the SSTMD in abnormal shock/vibration environments. By revealing and taking advantage of those two weaklink effects, we get a novel SSTMD architecture with integrated thermal and shock weaklink functions, which would be quite suitable for the high consequence system applications.

关键词： TMS Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

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