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IEEE International Conference on micro Electro Mechanical systems

作者： Jiao Xu Zhuoyue Zheng Jingqian Xi Ziqian Zhang Huafeng Liu Pan Zhang Jianlin Chen Chen Wang Michael Kraft Yuan Wang R. P. Martins Pui-In Mak MOE Key Laboratory of Fundamental Physical Quantities Measurement PGMF and School of Physics Huazhong University of Science and Technology Wuhan P. R. China Institute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated Circuits Peking University China School of Microelectronics Shanghai University China Department of Electrical Engineering-MNS KU Leuven Leuven Belgium

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper reports a novel MEMS resonant structure functioning as a baseline resonant electrostatic force/temperature sensor, highlighting its substantial potential in sensing applications. The resonator, characterized by a dual-cosine structure, is capable of simultaneous multiple resonant modes actuation within the 300 kHz range, through a sole-source drive approach using the recent emerging Blue Sideband Excitation (BSE) technique. This method enables a distinctive multi-modal response, essential for multi-parameter measurements. The research focuses on the sensor’s temperature characteristics, electrostatic perturbation sensitivity, and noise floor. Notably, the study reveals intriguing temperature responses across different modes, where certain modes exhibit a significant frequency rise with increasing temperature, this is counter-intuitive with common MEMS resonator devices, prompting further investigation into the underlying mechanisms. The analysis of electrostatic perturbation sensitivity and noise background further unfolds the resonator’s performance under various excitation conditions, laying a foundation for advancing sensor functionality, and providing solid evidence on the viability of the subject. To sum up, this study highlights the resonator’s potential as a high-precision sensor, opening new opportunities for MEMS sensor design and multi-parameter measurement applications.

关键词： Temperature measurement micromechanical devices Temperature sensors Electric potential Temperature Sensitivity Perturbation methods Noise Sensors Electrostatics

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Thick SU8 microstructures prepared by broadband UV lithography and the applications in MEMS devices

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Optoelectronics Letters 2016年第3期12卷 182-187页

作者：李东玲温志渝尚正国佘引 National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China Micro System Reaserch CenterChongqing University

Thick SU8 microstructures with high aspect ratio and good side wall quality were fabricated by ultraviolet （UV） lithography, and the processing parameters were comprehensively studied. It proves that the adhesion of SU8 on silicon （Si） substrates is influenced by Si-OH on the surface, and can be improved by the HF treatment. Cracks and de- lamination are caused by large internal stress during fabrication process, and are significantly influenced by soft bake and post-exposure bake processes. The internal stress is reduced by a low post-exposure bake exposure tem- perature of 85 ℃ for 40 rain. A three-step soft bake enhances the reflowing ofSU8 photoresist, and results in uni- form surface and less air bubbles. The vertical side wall is obtained with the optimized exposure dose of 800 mJ/cm2 for the thickness of 160 μm. Using the optimized fabrication process combined with a proper structure design, dense SU8 micro pillars are achieved with the aspect ratio of 10 and the taper angle of 89.86°. Finally, some possible ap- plications of SU8 in micro-electromechanical system （MEMS） device are developed and demonstrated.

关键词： MEMS器件紫外光刻微结构应用微机电系统烘烤过程编写宽带

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Calculation of surface acoustic waves in a multilayered piezoelectric structure

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Journal of Semiconductors 2013年第1期34卷 6-11页

作者：张祖伟温志渝胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing University National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Microsystem Research Center Chongqing University

The propagation properties of the surface acoustic waves（SAWs） in a ZnO-SiO2-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic *** phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO2-Si structures are calculated and *** Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the *** order to prove the calculated results,a Love mode SAW device based on the ZnO-SiO2-Si multilayered structure is fabricated by micromachining,and its frequency responses are *** experimental results are found to be mainly consistent with the calculated ones,except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the *** deviation of the experimental results from the calculated ones is reduced by thermal annealing.

关键词： SAW RAM multilayered structure

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Development of Raman acousto-optic frequency shifter based on SAW

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Journal of Semiconductors 2014年第8期35卷 104-109页

作者：王春梅温志渝张祖伟张颖异 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing University National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Microsystem Research Center of Chongqing University

A Raman acousto-optic frequency shifter （AOFS） based on surface acoustic wave （SAW） is presented. It consists of a double-ended SAW resonator and optical waveguide system. The structure parameters of the SAW resonator are optimized using COM software and the optical waveguide system is designed using an effective index method. The AOFS prototype fabricated using MEMS technology is detected. The optical beat signals su- perimposed by ± 1st-order and ±2nd-order diffracted beams are detected. The frequency shift of 78.2201 MHz related to the 1 st-order diffracted beams and 156.2306 MHz related to the 2nd-order diffracted beams are obtained respectively.

关键词： SAW Raman AOFS frequency shift

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The fabrication of vibration energy harvester arrays based on AlN piezoelectric film

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Journal of Semiconductors 2013年第11期34卷 79-82页

作者：尚正国李东玲温志渝赵兴强 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing University National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Microsystem Research Center of Chongqing University

： The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride （AlN） film are presented. The structure design and fabrication process of the device are introduced. The key material, the AIN film with crystal orientation （002）, was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction （XRD）. The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g （g is standard gravity acceleration） is applied. key words： A1N; crystal orientation; harvester arrays; vibration energy

关键词： AlN crystal orientation harvester arrays vibration energy

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Low temperature Si/Si wafer direct bonding using a plasma activated method

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Journal of Zhejiang University-science C(Computers and Electronics) 2013年第4期14卷 244-251页

作者： Dong-ling LI Zheng-guo SHANG Sheng-qiang WANG Zhi-yu WEN National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Chongqing University MOE Key Laboratory of Optoelectronic Technology & Systems Chongqing University Microsystem Research Center Chongqing University

Manufacturing and integration of micro-electro-mechanical systems （MEMS） devices and integrated circuits （ICs） by wafer bonding often generate problems caused by thermal properties of materials. This paper presents a low temperature wafer direct bonding process assisted by 02 plasma. Silicon wafers were treated with wet chemical cleaning and subsequently activated by 02 plasma in the etch element of a sputtering system. Then, two wafers were brought into contact in the bonder followed by annealing in N2 atmosphere for several hours. An infrared imaging system was used to detect bonding defects and a razor blade test was carried out to determine surface energy. The bonding yield reaches 90%--95% and the achieved surface energy is 1.76 J/m2 when the bonded wafers are annealed at 350 ~C in N2 atmosphere for 2 h. Void formation was systematically observed and eli-mination methods were proposed. The size and density of voids greatly depend on the annealing temperature. Short O2 plasma treatment for 60 s can alleviate void formation and enhance surface energy. A pulling test reveals that the bonding strength is more than 11.0 MPa. This low temperature wafer direct bonding process provides an efficient and reliable method for 3D integration, system on chip, and MEMS packaging.

关键词： Low temperature Wafer direct bonding O2 plasma activation Surface energy Void formation

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Electronic band transformation from indirect gap to direct gap in Si-H compound

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Chinese Physics B 2010年第7期19卷 491-496页

作者：丁建宁王君雄袁宁一坎标陈效双 Center for Low-Dimensional Materials Micro-Nano Devices and SystemJiangsu Polytechnic University Center for Micro/Nano Science and Technology Jiangsu University Key Laboratory of New Energy Source National Laboratory of Infrared Physics Shanghai Institute for Technical PhysicsChinese Academy of Sciences

The electronic band structures of periodic models for S^H compounds are investigated by the density functional theory. Our results show that the Si H compound changes from indirect-gap semiconductor to direct-gap semiconductor with the increase of H content. The density of states, the partial density of states and the atomic charge population are examined in detail to explore the origin of this phenomenon. It is found that the Si-Si bonds are affected by H atoms, which results in the electronic band transformation from indirect gap to direct gap. This is confirmed by the nearest neighbour semi-empirical tight-binding （TB） theory.

关键词： Si-H compounds band structure density functional theory tight-binding calculation

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Symbiotic evolution of photonics and artificial intelligence: a comprehensive review

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Advanced Photonics 2025年第02期 8-85页

作者： Fu Feng Dewang Huo Ziyang Zhang Yijie Lou Shengyao Wang Zhijuan Gu Dong-Sheng Liu Xinhui Duan Daqian Wang Xiaowei Liu Ji Qi Shaoliang Yu Qingyang Du Guangyong Chen Cuicui Lu Yu Yu Xifeng Ren Xiaocong Yuan Zhejiang Lab Research Center for Frontier Fundamental Studies Westlake Institute for Optoelectronics Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization Beijing Institute of Technology School of Physics Center for Interdisciplinary Science of Optical Quantum and NEMS Integration Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics University of Science and Technology of China CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence in Quantum Information and Quantum Physics Zhejiang Lab Research Center for Life Sciences Computing

The rapid advancement of artificial intelligence(AI) has significantly impacted photonics, creating a symbiotic relationship that accelerates the development and applications of both fields. From the perspective of AI aiding photonics, deep-learning methods and various intelligent algorithms have been developed for designing complex photonic structures, where traditional design approaches fall short. AI's capability to process and analyze large data sets has enabled the discovery of novel materials, such as for photovoltaics,leading to enhanced light absorption and efficiency. AI is also significantly transforming the field of optical imaging with improved performance. In addition, AI-driven techniques have revolutionized optical communication systems by optimizing signal processing and enhancing the bandwidth and reliability of data transmission. Conversely, the contribution of photonics to AI is equally profound. Photonic technologies offer unparalleled advantages in the development of AI hardware, providing solutions to overcome the bottlenecks of electronic systems. The implementation of photonic neural networks, leveraging the high speed and parallelism of optical computing, demonstrates significant improvements in the processing speed and energy efficiency of AI computations. Furthermore, advancements in optical sensors and imaging technologies not only enrich AI applications with high-quality data but also expand the capabilities of AI in fields such as autonomous vehicles and medical imaging. We provide comprehensive knowledge and a detailed analysis of the current state of the art, addressing both challenges and opportunities at the intersection of AI and photonics. The multifaceted interactions between AI and photonics will be explored, illustrating how AI has become an indispensable tool in the development of photonics and how photonics, in turn,facilitates advancements in AI. Through a collection of case studies and examples, we underscore the potential

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Fabrication of aluminum nitride films by reactive pulse DC magnetron sputtering for vibration energy harvester

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key Engineering Materials 2015年 645卷 1133-1138页

作者： Shang, Zhengguo Li, Dongling Wang, Shengqiang National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing China Microsystem Research Center Chongqing University Chongqing China

Aluminum nitride(AlN) film as a piezoelectric material has been used widely, particularly in vibration energy harvester due to its unique and enhanced properties such as high temperature resistance and compatibility with CMOS processes. In this work, AlN film with (002) preferred orientation was prepared on silicon wafers by pulse DC reactive magnetron sputtering(RMS), and the properties such as peak intensity, full width at half maximum (FWHM) and surface morphology were investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The preferred orientation was found to be sensitive to deposition conditions such as gas flow rate, power, bottom electrodes materials and substrates temperature. The results shows that the intensity was 1.1×105 counts, the FWHM was 1.9° when the temperature was 260°C. The film was used to fabricate the vibrated energy harvester successful and the power density reached about 3000uW/cm3 at the vibration frequency under 1g acceleration. © 2015 Trans Tech Publications, Switzerland.

关键词： Magnetron sputtering

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One-Step Laser-Induced Dissolvable PVA Mask for 3D Soft Carbon Electrode Array

One-Step Laser-Induced Dissolvable PVA Mask for 3D Soft Carb...

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IEEE International Conference on micro Electro Mechanical systems

作者： Xuanqi Wang Kai Xue Ruiyu Bai Ye Huang Zimo Zhang Xiaoli You Minghao Wang Honglong Chang Bowen Ji Unmanned System Research Institute Northwestern Polytechnical University China National Key Laboratory of Unmanned Aerial Vehicle Technology Integrated Research and Development Platform of Unmanned Aerial Vehicle Technology Northwestern Polytechnical University China Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace School of Mechanical Engineering Northwestern Polytechnical University China Sanhang Institute for Brain Science and Technology Northwestern Polytechnical University China Institute of Medical Research Northwestern Polytechnical University China MOE Engineering Research Center of Smart Microsensors and Microsystems College of Electronics and Information Hangzhou Dianzi University China

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper introduces a 3D soft carbon electrode array, fabricated through a one-step laser-induced process integrating a water-dissolvable polyvinyl alcohol (PVA) mask. This approach achieves precise conical microstructures and robust conductive channels using hybrid MWCNT@PDMS conductive paste. The soft carbon electrode sites with a 3D conical microstructure are designed to enhance proximity to neural tissue, thereby enhancing electrocorticogram (ECoG) signal quality and enabling effective neural stimulation. The electrode array demonstrates remarkable stretchability (25% over 1,000 cycles without failure) and stability (equivalent to 66 days in vivo). Compared to conventional materials, our electrodes exhibit superior electrochemical properties, including lower impedance (9.7 kΩ at 1 kHz) and higher signal-to-noise ratio (SNR, 61.7 dB). Thus, this one-step process is a cost-effective, scalable solution for recording and modulating central or peripheral neural tissues.

关键词： Electrodes micromechanical devices Three-dimensional displays Array signal processing Laser stability Recording microstructure Carbon Laser beam cutting Signal to noise ratio

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