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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： GAO Yang CAI Xun HE Xuefeng Institute of Electronic Engineering China Academy of Engineering Physics State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsCAS School of Information Engineering Southwest University of Science and Technology National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator(FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active area of each FBAR unit. To get this, we made the resonance area value of series FBAR units and the ratio of resonance area value of parallel FBAR units and series FBAR units into two types of optimization parameters reasonably. Taking the given insertion loss and out-of-band rejection of filter as the optimization objective, we obtained the optimized values by the algorithm based on gradient in ADS software. The last step 4 aiming at minimizing filter passband ripple. In the design case, this aim is fulfilled by a novel FBARs' electrode layer thickness adjusting method, and intentionally slightly mismatches the series resonant frequency of the series FBAR units with the parallel resonant frequency of the parallel FBAR units. As in the design case results, a only 300 nm thick SiO 2 support layer need to survive the backside via-hole etching micro-fabrication process, so we proposed a buried oxide layer(BOX) buffered 2-step via-hole etching scheme, which taking advantage of the etching self-stop characteristic of BOX. Design case results show that insertion loss of the Rx filter is 0.6 d B, rejection in Tx frequency band is 40.4 d B and passband ripple is 0.4 d B. Thus we validate the feasibility of the design method.

关键词： Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme filter SOI

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Reliable deposition of ultra-thin parylene

Reliable deposition of ultra-thin parylene

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IEEE International Conference on micro Electro Mechanical systems

作者： Wei Wang Dongyang Kang Wangzhi Dai Yu-Chong Tai Electrical Engineering Caltech CA USA National Key Laboratory of Science and Technology on Micro/Nano Fabrication Innovation Center for Micro-Nano-electronics and Integrated System Beijing China Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781509006090

This paper reports a novel and reliable process to prepare ultra-thin parylene film based on a principle combining both molecular effusion and diffusion. For the first time, a technique for the deposition of parylene film thinner than 20 nm in a highly controllable and repeatable way is developed. Parylene films with various thicknesses could also be prepared in a single deposition run by using this method. This technique holds promising potentials in extensive applications, such as protection/dielectric layer for needle electrodes and flexible electronics, semi-permeable membrane, and other polymer engineering.

关键词： Decision support systems micromechanical devices

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Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

Safety Analysis on a Novel Solid State Thermal Mechanical Di...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： JIA Le GAO Yang WANG Yu-hang LV Jun-guang School of Information Engineering Southwest University of Science and Technology Institute of Electronic Engineering China Academy of Engineering Physics National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University State Key Laboratory of Particle Detection and Electronics Institute of High Energy Physics CAS

In order to strengthen safety in abnormal environment, we analyze safety on the Solid State Thermal Mechanical Discriminator(SSTMD). Firstly, we calculate the number of Thermo-Mechanical Switches(TMSs) by means of a method with probability theory when the probability of unintentional unlock on the SSTMD is less than 10-6. Then the probability of safety failure on the SSTMD is estimated by analyzing the relationship between probability of a TMS from OFF state to ON state and temperature in abnormal high temperature environment. We put forward two design criteria for the layout of the SSTMD by analyzing working principle of the Trap TMSs played a role as intrinsic thermal weaklink to reduce the probability of safety failure on SSTMD in abnormal high temperature environment. There are two design rules to enhance the thermal weaklink effect. Firstly, TMSs can be classed as two groups: the Route TMSs and the Trap TMSs, and those two class TMSs should be evenly layout as far as possible, to obtain equal probability of contacting hotspot for the Trap TMSs to work in abnormal high-temperature environment. Secondly, we choose lower melting point of materials on the Trap TMSs to make them preemptively switch to the ON state before the Route TMSs. Additionally, we find the intrinsic shock weaklink effect in the Route TMSs, and enhanced this beneficial effect by etching an annular groove on the back of insulating film membrane of the Route TMSs, to ensure the safety of the SSTMD in abnormal shock/vibration environments. By revealing and taking advantage of those two weaklink effects, we get a novel SSTMD architecture with integrated thermal and shock weaklink functions, which would be quite suitable for the high consequence system applications.

关键词： TMS Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

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E-plane bending input/output coupler in staggered double vane TWT amplifier

E-plane bending input/output coupler in staggered double van...

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International Conference on Vacuum Electronics

作者： Xianbao Shi Laxma Reddy Billa Yubin Gong Muhammad Nadeem Akram Xuyuan Chen Department of Micro-and Nano-system Technology (IMST) Buskerud and Vestfold University College Norway National Key Laboratory of Science and Technology on Vacuum Electronics University of Electronic Science and Technology of China Chengdu Sichuan China

ISBN: (纸本)9781467392181

In this paper, an E-plane bending input/output structure in terahertz staggered double vane traveling wave tube (TWT) is designed. This structure is considered more suitable for fabrication using the MEMS technology. The simulation results show that this structure also possesses a low reflection coefficient. Moreover, the optimized PIC simulation results are given in this paper.

关键词： Attenuators Blades Electron tubes Couplers micromechanical devices Fabrication Reflection coefficient

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Design of a graphene capacitive pressure sensor for ultra-low pressure detection

Design of a graphene capacitive pressure sensor for ultra-lo...

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IEEE International Conference on nano/micro Engineered and Molecular systems (NEMS)

作者： Yangxi Zhang Yiming Gui Fanrui Meng Chengchen Gao Yilong Hao Institute of Microelectronics Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China Device and system Collaborative Innovation Center for Micro/Nano Fabrication Beijing China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9781509019489

This paper reports the design and theoretical calculation of a capacitive ultra-low pressure sensor, which is based on circular suspend graphene diaphragm array. The atom scale thickness and high mechanical strength of suspend graphene diaphragm both contribute to ultra-low pressure measure range. As the size of single suspend graphene diaphragm is limited by fabrication process, a parallel connected sensor array is designed to achieve detectable capacitance change and redundancy. In calculation, a sensor array with 40,000 5μm radius suspend graphene diaphragm cells in 4mm×4mm size can provide 288fF/Pa sensitivity to pressure load.

关键词： Graphene Capacitance Pressure sensors Sensor arrays Films Electrodes Sensitivity

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Strongly interacting bose gases near a d-wave shape resonance

arXiv

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arXiv 2017年

作者： Yao, Xing-Can Qi, Ran Liu, Xiang-Pei Wang, Xiao-Qiong Wang, Yu-Xuan Wu, Yu-Ping Chen, Hao-Ze Zhang, Peng Zhai, Hui Chen, Yu-Ao Pan, Jian-Wei Shanghai Branch National Laboratory for Physical Sciences at Microscale Department of Modern Physics University of Science and Technology of China Shanghai201315 China CAS Center for Excellence Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui230026 China CAS-Alibaba Quantum Computing Laboratory Shanghai201315 China Department of Physics Renmin University of China Beijing100872 China Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin Univeristy of China 100872 Institute for Advanced Study Tsinghua University Beijing100084 China Collaborative Innovation Center of Quantum Matter Beijing100084 China

Many unconventional quantum matters, such as fractional quantum Hall effect and d-wave high-Tc superconductor, are discovered in strongly interacting systems. Understanding quantum many-body systems with strong interaction and the unconventional phases therein is one of the most challenging problems in physics nowadays. Cold atom systems possess a natural way to create strong interaction by bringing the system to the vicinity of a scattering resonance. Although this has been a focused topic in cold atom physics for more than a decade, these studies have so far mostly been limited for s-wave resonance. Here we report the experimental observation of a broad d-wave shape resonance in degenerate 41K gas. We further measure the molecular binding energy that splits into three branches as a hallmark of d-wave molecules, and find that the lifetime of this many-body system is reasonably long at strongly interacting regime. From analyzing the breathing mode excited by ramping through this resonance, it suggests that a quite stable low-temperature atom and molecule mixture is produced. Putting all the evidence together, our system offers great promise to reach a d-wave molecular superfluid. Copyright © 2017, The Authors. All rights reserved.

关键词： Temperature

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H-plane Loaded and Phase Velocity Tapered SWS for Improved Performance of TWT THz Sources

H-plane Loaded and Phase Velocity Tapered SWS for Improved P...

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2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies

作者： Xuyuan Chen Laxma R.Billa Xianbao Shi M.Nadeem Akram Department of Micro- and Nano-System Technology University College of Southeast Norway State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi University Vacuum Electronics National Laboratory School of Physical ElectronicsUniversity of Electronic Science and Technology of China

The design optimization and simulation for high performance of two types of slow wave structures(SWS) for micro-electro-mechanical system(MEMS) terahertz(THz)sources are presented,e.g.,THz staggered double vane(SDV)traveling wave tube(TWT) working at center frequency of 220 GHz,H-plane and E-plane loaded(HEL) rectangular TWT working at center frequency of 400 *** structures are able to realize a larger interaction impedance,thereby resulting in higher gain and improved output power of the *** further enhance the energy transferring between the electron beam and THz wave,the maximum length of the interaction section can be extended using the phase velocity tapering technique,where the spent electron beam energy can be reused by resynchronizing the phase velocity of the THz signal with electron velocity at the second section of the *** an achievement,improved power of more than 50%is achieved over the operated bandwidth for both *** designs have considered the LIGA fabrication for these vacuum MEMS THz sources.

关键词： Terahetz TWT Phase velocity tapered technology H-loaded and E-loaded corrugation

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Pairing superfluidity in spin-orbit coupled ultracold Fermi gases

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science China(Physics,Mechanics & Astronomy) 2015年第1期58卷 1-11页

作者： YI Wei ZHANG Wei CUI XiaoLing Key Laboratory of Quantum Information University of Science and Technology of China Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Department of Physics Renmin University of China Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences

We review some recent progresses on the study of ultracold Fermi gases with synthetic spin-orbit *** particular,we focus on the pairing superfluidity in these systems at zero *** studies have shown that different forms of spin-orbit coupling in various spatial dimensions can lead to a wealth of novel pairing superfluidity.A common theme of these variations is the emergence of new pairing mechanisms which are direct results of spin-orbit-coupling-modified single-particle dispersion *** different configurations can give rise to single-particle dispersion spectra with drastic differences in symmetry,spin dependence and low-energy density of states,spin-orbit coupling is potentially a powerful tool of quantum control,which,when combined with other available control schemes in ultracold atomic gases,will enable us to engineer novel states of matter.

关键词： spin-orbit coupling ultracold Fermi gas superconductivity topological superfluid

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Numerical optimization approach of the gap between the magnet and coil for electromagnetic vibration energy harvesters design

Numerical optimization approach of the gap between the magne...

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16th Annual Conference and 5th International Conference on Chinese Society of micro-nano technology, CSMNT 2014

作者： Lei, Yiming Wen, Zhiyu Key Laboratory of Fundamental Science on Micro/Nano Device and System Technology Chongqing University China National Center for International Research of Micro/Nano System and New Material Technology Chongqing University China Micro System Research Center of Chongqing University Chongqing China

ISBN: (纸本)9783038354628

In the design of the micro electromagnetic vibration harvester, an important goal is maximization of the magnetic flux linkage gradient, which directly determines the induced voltage and output power of the electromagnetic vibration harvester. This paper established a numerical model based on structure of the electromagnetic vibration energy harvester. An analytic expression for the magnetic field of rectangular permanent magnets is used to build up an electromagnetic coupling model. The magnetic field distribution of the rectangular permanent magnet was analyzed. The effects of the gap between the magnet and the coil on the load voltage of the electromagnetic vibration energy harvester were investigated. According to the formula, the magnetic flux linkage and flux gradient were calculated to optimize the geometrical parameter of the magnet and coil. The method and boundary conditions of optimizing the gap between the magnet and coil were presented. The maximum output voltage can be obtained by optimizing the gap between the magnet and the coil. A simple prototype was fabricated and measured to validate the theoretical deducing and the feasibility of method. © (2015) Trans Tech Publications, Switzerland.

关键词： Energy harvesting

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H-plane loaded and phase velocity tapered SWS for improved performance of TWT THz sources 9

H-plane loaded and phase velocity tapered SWS for improved p...

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9th IEEE UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies, UCMMT 2016

作者： Chen, Xuyuan Billa, Laxma R. Shi, Xianbao Nadeem Akram, M. Department of Micro and Nano-System Technology University College of Southeast Norway Borre Norway State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser Spectroscopy Shanxi University Taiyuan Shanxi030006 China Vacuum Electronics National Laboratory School of Physical Electronics University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (纸本)9781509022755

The design optimization and simulation for high performance of two types of slow wave structures (SWS) for micro-electro-mechanical system (MEMS) terahertz (THz) sources are presented, e.g., THz staggered double vane (SDV) traveling wave tube (TWT) working at center frequency of 220 GHz, H-plane and E-plane loaded (HEL) rectangular TWT working at center frequency of 400 GHz. The structures are able to realize a larger interaction impedance, thereby resulting in higher gain and improved output power of the devices. To further enhance the energy transferring between the electron beam and THz wave, the maximum length of the interaction section can be extended using the phase velocity tapering technique, where the spent electron beam energy can be reused by resynchronizing the phase velocity of the THz signal with electron velocity at the second section of the TWT. As an achievement, improved power of more than 50% is achieved over the operated bandwidth for both designs. The designs have considered the LIGA fabrication for these vacuum MEMS THz sources. © 2016 IEEE.

关键词： Electron beams

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