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Low temperature Si/Si wafer direct bonding using a plasma activated method

Journal of Zhejiang University-science C(Computers and Electronics) 2013年第4期14卷 244-251页

作者： Dong-ling LI Zheng-guo SHANG Sheng-qiang WANG Zhi-yu WEN National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Chongqing University MOE Key Laboratory of Optoelectronic Technology & Systems Chongqing University Microsystem Research Center Chongqing University

Manufacturing and integration of micro-electro-mechanical systems （MEMS） devices and integrated circuits （ICs） by wafer bonding often generate problems caused by thermal properties of materials. This paper presents a low temperature wafer direct bonding process assisted by 02 plasma. Silicon wafers were treated with wet chemical cleaning and subsequently activated by 02 plasma in the etch element of a sputtering system. Then, two wafers were brought into contact in the bonder followed by annealing in N2 atmosphere for several hours. An infrared imaging system was used to detect bonding defects and a razor blade test was carried out to determine surface energy. The bonding yield reaches 90%--95% and the achieved surface energy is 1.76 J/m2 when the bonded wafers are annealed at 350 ~C in N2 atmosphere for 2 h. Void formation was systematically observed and eli-mination methods were proposed. The size and density of voids greatly depend on the annealing temperature. Short O2 plasma treatment for 60 s can alleviate void formation and enhance surface energy. A pulling test reveals that the bonding strength is more than 11.0 MPa. This low temperature wafer direct bonding process provides an efficient and reliable method for 3D integration, system on chip, and MEMS packaging.

关键词： Low temperature Wafer direct bonding O2 plasma activation Surface energy Void formation

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Electrocaloric Effect of P(VDF-TrFE)/SrTiO_3 Bilayer Thin Films

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Communications in Theoretical Physics 2013年第1期59卷 117-120页

作者：邱建华丁建宁袁宁一王秀琴 Center for Low-Dimensional Materials Micro-Nano Devices and SystemChangzhou University School of Material Science and Engineering Jiangsu University Jiangsu Key Laboratory for Solar Cell Materials and Technology

A phenomenological thermodynamic theory is applied to investigate the effect of misfit strgin and electric field on the electrocaloric effect of P（VDF-TrFN）/SrTiO3 bilayer thin films. Theoretical results indicate that the low electric field results in the decrease of the average polarization with the increase of the relative thickness of SrTi03 layer, and the high electric field has an opposite effect on it. Moreover, the electroealoric effect strongly depends on the electric field. The low electric field and the small field change can lead to a maximum of the electrocaloric effect, meanwhile the high electric field or the large field change results in the opposite trend.

关键词： bilayer thin film polymer electrocaloric effect

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LONGITUDINAL WAVE RESONANT FREQUENCY CALCULATION AND VERIFICATION OF THE BULK ACOUSTIC RESONATOR

LONGITUDINAL WAVE RESONANT FREQUENCY CALCULATION AND VERIFIC...

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2013 5th IEEE International Conference on Broadband Network & Multimedia technology

作者： Yi HE Yang GAO Bin ZHOU Junru LI School of Information Engineering Southwest University of Science and Technology Institute of Electronic Engineering China Academy of Engineering Physics National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

ISBN: (纸本)9781479900961

Thickness and material of electrode, piezoelectric and supporting layer film of the Film Bulk Acoustic Resonator (FBAR) are main influence factors of resonant frequency, desired resonance frequency can be achieved by confirming thickness and material. A formula about thickness, material, frequency parameter and angular frequency has been achieved by deriving stress-equation of motion in longitudinal wave of film bulk acoustic resonator;frequency parameter has been get from Newton iteration of determinant of stress and displacement boundary conditions, continuity equations simulated by MATLAB. The resonant frequency of a certain FBAR whose thickness, material and frequency parameter are determined has been calculated by the formula, and the calculation value is 1.441 GHz. Equivalent circuit of longitudinal vibration Mason model which has the same thickness, material with formula calculation has been simulated by ADS, and resonant frequency of simulation model is 1.473GHz. Verification simulation of equivalent circuit of longitudinal vibration Mason model shows: resonant frequency calculation value by formula and the simulation value of model are very close, and we can use the formula to calculate longitudinal wave resonance frequency of FBAR.

关键词： FBAR resonant frequency Newton iteration Mason model ADS simulation

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Studies on Static Temperature Compensation for Vibrating Beam Accelerometer

Studies on Static Temperature Compensation for Vibrating Bea...

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2013 3rd International Conference on Mechanical Materials and Manufacturing Engineering(ICMMME 2013)

作者： Lishuang Feng He Wang Zhen Zhou Gongliu Yang Fundamental Science on Novel Inertial Instrument & Navigation System Technology Laboratory Beihang University Key Laboratory of Micro-nano Measurement-manipulation and Physics (Ministry of Education) Beihang University

Static temperature model identification and compensation of vibrating beam accelerometer(VBA)are studied in this *** relationships between scale factor K1,zero bias K0 with temperature are obtained through static rolling test in 1g-gravitational *** accelerometer static temperature model between-40℃to 60℃is established using the least square *** error model is used for temperature compensation of *** show that the precision of fitting RMS error is improved by an order of magnitude.

关键词： Vibrating Beam Accelerometer Static temperature model Temperature compensation

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Surface and substrate induced effects on thin films of the topological insulators Bi2Se3 and Bi2Te3

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Physical Review B 2013年第20期87卷 205315-205315页

作者： Wenliang Liu Xiangyang Peng Xiaolin Wei Hong Yang G. Malcolm Stocks Jianxin Zhong Hunan Key Laboratory of Micro-Nano Energy Materials and Devices Xiangtan University Hunan 411105 People's Republic of China Laboratory for Quantum Engineering and Micro-Nano Energy Technology Faculty of Materials and Optoelectronic Physics Xiangtan University Hunan 411105 People's Republic of China Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA

Based on van der Waals density functional calculations, we have studied few-quintuple-layer (QL) films of Bi2Se3 and Bi2Te3. The separation between the QLs near the surface is found to have a large increase after relaxation, whereas, the separation between the inner QLs is smaller and approaches the bulk value as the thickness grows, showing a two-dimensional to three-dimensional structural crossover. Accordingly, the surface Dirac cone of the Bi2Se3 film is evidently gapped for small thicknesses (two to four QLs), and the gap is reduced and, finally, is closed with the increasing thickness, agreeing well with the experiments. We further studied the substrate effect by investigating the Bi2Se3/graphene system. It is found that the underlying graphene induces a giant thickness-dependent Rashba splitting and Dirac point shift. Because Bi2Te3 films have smaller relative inter-QL expansion and stronger spin-orbit coupling, the topological features start to appear in the film as thin as two QLs in good accord with the experiments.

关键词： DENSITY functionals GRAPHENE RASHBA effect SPIN-orbit coupling DIRAC function

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Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第4期33卷 51-56页

作者：张祖伟温志渝胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China National Center for International Research of Micro/Nano-System and New Material Technology Chongqing UniversityChongqing 400030China Microsystem Research Center of Chongqing University Chongqing 400030China

The design and simulation of a novel microoptoelectromechanical system （MOEMS） accelerometer based on Raman-Nath diffraction are presented. The device is planned to be fabricated by microelectromechanical system technology and has a different sensing principle than the other reported MOEMS accelerometers. The fun- damental theories and principles of the device are discussed in detail, a 3D finite element simulation of the flexural plate wave delay line oscillator is provided, and the operation frequency around 40 MHz is calculated. Finally, a lecture experiment is performed to demonstrate the feasibility of the device. This novel accelerometer is proposed to have the advantages of high sensitivity and anti-radiation, and has great potential for various applications.

关键词： accelerometer MOEMS Raman-Nath diffraction FPW delay line oscillator

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Design and process test of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第9期33卷 82-88页

作者：张祖伟温志渝尚正国李东玲胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Chongqing 400030China Microsystem Research Center of Chongqing University Chongqing 400030China

A novel micro-opto-electro-mechanical system （MOEMS） accelerometer based on Raman-Nath diffraction is presented. It mainly consists of an FPW delay line oscillator and optical strip waveguides. The fun- damental theories and principles of the device are introduced briefly. A flexural plate-wave delay-line oscillator is designed to work as an acousto-optic （AO） shifter, which has a Klein-Cook parameter of 0.38. Single-mode optical strip waveguides of 2 μm in width and thicknesses of 0.6 μm are designed by using the effective index method for light transmission. The E^y00 mode waveguide polarizers are designed to ensure the consistency of the light polarization in the waveguides. The fabrication process, based on （100） oriented, 450-#m-thick silicon wafers is proposed in detail, and some difficulties in the process are discussed carefully. At last, a series of process tests are undertaken to solve the proposed problems. The results indicate that the proposed design and fabrication process of the device is dependable and realizable.

关键词： accelerometer MOEMS Raman-Nath diffraction design process test

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Structural Design of a Compact in-Plane nano-Grating Accelerometer

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Chinese Physics Letters 2012年第11期29卷 219-223页

作者： YAO Bao-Yin ZHOU Zhen FENG Li-Shuang WANG Wen-Pu WANG Xiao Key Laboratory of Micro-nano Measurement-manipulation and Physics(Ministry of Education) Beihang UniversityBeijing 100191 Fundamental of Science on Novel Inertial Instrument&Navigation System Technology Laboratory Beihang UniversityBeijing 100191

A combination of large mass,weak spring and nano-grating is the key for a nano-grating accelerometer to measure nano-G acceleration.A novel compact nano-grating accelerometer integrating a large mass with nano-grating is ***,the numbers of diffraction orders are ***,structure parameters are optimized by finite element analysis to achieve a high sensitivity in an ideal vibration ***,we design the fabrication method to form such a compact nano-grating accelerometer and successfully fabricate the uniform and well-designed nano-gratings with a period of 847 nm,crater of 451 nm by an FIB/SEM dual beam *** on the ANSYS simulation,a nano-grating accelerometer is predicted to work in the first modal and enables the accelerometer to have displacement sensitivity at 197 nm/G with a measurement range of±1 G,corresponding to zeroth diffraction beam optical sensitivity 1%/*** nano-gratings fabricated are very close to those designed ones within experimental error to lay the foundation for the sequent *** results provide a theoretical basis for the design and fabrication of nano-grating accelerometers.

关键词： accelerometer beam integrating

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Preparation and characterization of three-dimensional micro-electrode for micro-supercapacitor based on inductively coupled plasma reactive etching technology

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science China(Technological sciences) 2012年第7期55卷 2013-2018页

作者： WEN ChunMing WEN ZhiYu YOU Zheng WANG XiaoFeng Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China Microsystem Research Center Chongqing UniversityChongqing 400030China Department of Precision Instruments and Mechanics Tsinghua UniversityBeijing 100084China

The capacity of supercapacitor charge storage depends on the size of the electrode surface area and the active material on the *** enhance the charge storage capacity with a reduced volume,silicon is used as the electrode material,and three-dimensional electrode structure is prepared to increase the electrode surface area on the footprint area by inductively coupled plasma reactive etching(ICP) *** anodic constant current deposition method is employed to deposit manganese oxide on the electrode surface as the electroactive *** comparison,samples without slot are prepared with a two-dimensional *** Electron microscopy(SEM) and Energy Dispersive Spectroscopy(EDS) are used to characterize the surface morphology of the electrode structure and the deposited electroactive *** properties of the electrode are characterized by the cyclic voltammetry(CV) and the constant current charge-discharge *** results show that our approach can effectively increase the electrode surface area with more electroactive substances,and hence can increase storage capacity of the micro-supercapacitor.

关键词： micro Electro Mechanical system（MEMS） micro-supercapacitors three-dimensional electrode inductively coupled plasma reactive etching manganese oxide silicon

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Preparation and Electrochemical Characteristics of Three-dimensional Manganese Oxide micro-supercapacitor Electrode

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Chinese Journal of Chemical Physics 2012年第2期25卷 209-213,I0004页

作者： Chun-ming Wen Zhi-yu Wen Zheng You Xiao-feng Wang Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China Microsystem Research Center Chongqing UniversityChongqing 400030China Department of Precision Instruments and Mechanics Tsinghua UniversityBeijing 100084China

In order to increase the electrode surface area and enhance the charge storage capacity, we study the micro electro mechanical system technology to fabricate three-dimensional high aspect ratio micro-electrode structure based on glass. The anodic constant potential method is employed to deposit manganese oxide as electroactive substances on the micro-electrode surface. Cyclic voltammetry and constant current charge-discharge method are both used to prepare electrode electrochemical performance testing, with a two-dimensional electrode without structure for comparison. Experimental results show that three-dimensional elec- trode structure can effectively enhance the charge storage capacity. At 1.0 mA/cm2 charge- discharge density, the three-dimensional electrode shows a capacitance of 17.88 mF/cm2, seven times higher than the two-dimensional electrode.

关键词： micro-supercapacitor micro electro mechanical system Three-dimensional electrode Manganese oxide

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