A density functional calculation was performed to investigate the impact of hydrogen and water molecules on zinc oxide clusters（ZnO）n=3-6…X,where X=H2and *** calculated binding energies were corrected for the basis...
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A density functional calculation was performed to investigate the impact of hydrogen and water molecules on zinc oxide clusters（ZnO）n=3-6…X,where X=H2and *** calculated binding energies were corrected for the basis set superposition error （BSSE）.The structural parameters and chemical hardness were calculated for the complexes of zinc oxide clusters and guest *** strength values of the interaction between the clusters and the guest molecules were analyzed based on the topological properties of atoms in molecules（AIM）theory of *** stereo electronic interactions inside the ZnO clusters were analyzed in detail using the natural bond orbital（NBO）analysis.
The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric i...
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The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP)[1] and high-speed circuitry design[2]. The authors of this paper explore the 3D full-wave modeling of through Si vias (TSV) in multilayered SIP and simulate their effects on spectral performance and signal integrity with the help of finite element methodologies. The emphasis of the research is on the revealing of 3D electromagnetic field distribution on fundamental single and differential TSV interlayer interconnects, so that more detailed parasitic effects may be found and equivalent model closer to the reality can be obtained, compared with the methodology based on purely circuit analysis. And the effect of the variations in the TSV diameter and height and the effect of grounded TSV are revealed. Additionally, S21 performance and field distribution of two sort of paired vias are displayed. Waveports are adopted for the full-wave modeling and all the cases are in 0～10GHz range.
A novel MOEMS-based (micro-Opto-Electro-Mechanical systems) light modulator for laser project display was proposed, which is called Grating Moving Light Modulator (GMLM). It can modulate light by diffraction, and has ...
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A novel MOEMS-based (micro-Opto-Electro-Mechanical systems) light modulator for laser project display was proposed, which is called Grating Moving Light Modulator (GMLM). It can modulate light by diffraction, and has a simple fabrication process and projection optical system. It is suitable to form 2D array modulator. To satisfy the requirement of HDTV projection system, the formulas and parameters for the key structure design of GMLM are given. The fabrication process is also designed to meet the special distinct of GMLM. Finally, experiments are carried out for the 16 × 16 GMLM array. The static and dynamic projection results of GMLM array are achieved by the laser projection demo system, which verifies the operation and projection principals of GMLM. The size of GMLM is measured as 52 μm × 52 μm. The operation voltage is measured as 6.7 V. The response frequency is measured as 11.9 kHz. Those parameters can satisfy the requirements of HDTV projector. But the uniformity and driving method of GMLM array need improvement. All of the above researches lay the foundation for the HDTV project display system based on GMLM.
Grating Light Modulator (GLM) based on micro-Electro-Mechanical systems (MEMS) is applied in projection *** principle of GLM is introduced in the *** factors influencing the performance of passive matrix addressing fo...
Grating Light Modulator (GLM) based on micro-Electro-Mechanical systems (MEMS) is applied in projection *** principle of GLM is introduced in the *** factors influencing the performance of passive matrix addressing for GLM are analyzed in *** the response frequency and the driving voltage are relative to the elastic coefficient of *** the elastic coefficient is larger,both response frequency and driving voltage are *** is indicated by analysis that in a m×n array when an all-selected pixel is actuated by a voltage V0,the voltages of half-selected pixel in row and column are respectively V0(m-1)/(m+n-1) and V0(n-1)/(m+n-1),and non-selected pixel's voltage is V0/(m+n-1).Finally,the operating voltage and the pull-in voltage are respectively 7.8V and 8.5V measured by the experiment,and these experimental values are very approximate to the theoretical *** GLM is actuated by a 7.8V square-wave voltage with lkHz frequency,the rising-edge time and the falling-edge time are respectively about 46.59μs and 44.77μ*** experiments indicate that the response frequency of GLM is about ***,the other experiment validates the correctness of crosstalk in a 16×16 GLM *** experiments provide a theoretical basis for improving the driver of GLM.
Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetr...
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Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.
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