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Neuron Circuit Design and Signal Integrity Analysis of a Large-scale Memristor-based Crossbar Array

IEEE Transactions on Components, Packaging and Manufacturing technology 2025年

作者： Li, Yan Fang, Lidan Li, Da Zhang, Ling Zhou, Haomiao Wang, Jiawei Liu, En-Xiao Li, Er-Ping China Jiliang University Key Laboratory of Electro-magnetic Wave Information Technology and Metrology of Zhejiang Province College of Information Engineering Hangzhou310018 China China Jiliang University Modern Science and Technology College Yiwu322000 China Zhejiang University Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart System Hangzhou310027 China Urbana–Champaign Institute Zhejiang University Zhejiang University–the University of Illinois Haining314400 China A*STAR Institute of High Performance Computing 1 Fusionpolis Way Singapore Singapore

This paper addresses the limitations of standard chips in processing large-scale datasets by leveraging neuromorphic architectures, particularly spiking neural networks (SNNs), to simulate the pulsed signals of biological brains for enhanced power efficiency and performance. Initially, we developed a CMOS circuit based on the Integrate-and-Fire (IF) neuron model, which generates spike signals with the spatiotemporal dynamics typical of neurons. This approach provides a novel perspective for neuromorphic chip design. Next, we introduce the Partial Element Equivalent Circuit (PEEC) method to establish a unit circuit model for the memristor crossbar array, accounting for all resistance-inductance-capacitance (RLC) parasitic couplings. This model enables precise signal integrity (SI) analysis, offering deeper insights into the signal transmission mechanisms within memristor crossbar arrays and serving as a foundation for optimizing neuromorphic chip performance. Building upon this model, we designed a 24×24 crossbar array hardware prototype, experimentally validating the reliability and feasibility of the circuit. Finally, we perform SI analysis to demonstrate that the performance of the memristor crossbar array can be enhanced by optimizing the rise time, adjusting the memristor’s resistance state, and adding inductance at the output. These findings provide both a theoretical foundation and a technical pathway for improving the performance of neuromorphic chips in practical applications. © 2025 IEEE. All rights reserved.

关键词： Memristors

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Entropic uncertainty relations for multiple measurements assigned with biased weights

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Physical Review Research 2024年第1期6卷 013127-013127页

作者： Shan Huang Hua-Lei Yin Zeng-Bing Chen Shengjun Wu National Laboratory of Solid State Microstructures and School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China Institute for Brain Sciences and Kuang Yaming Honors School Nanjing University Nanjing 210023 China Hefei National Laboratory University of Science and Technology of China Hefei 230088 China Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-Nano Devices Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Renmin University of China Beijing 100872 China

The entropic way of formulating Heisenberg's uncertainty principle not only plays a fundamental role in applications of quantum information theory but also is essential for manifesting genuine nonclassical features of quantum systems. In this paper we investigate Rényi entropic uncertainty relations (EURs) in the scenario where measurements on individual copies of a quantum system are selected with nonuniform probabilities. In contrast with EURs that characterize an observer's overall lack of information about outcomes with respect to a collection of measurements, we establish state-dependent lower bounds on the weighted sum of entropies over multiple measurements. Conventional EURs thus correspond to the special cases when all weights are equal, and in such cases we show our results are generally stronger than previous ones. Moreover, taking the entropic steering criterion as an example, we numerically verify that our EURs could be advantageous in practical quantum tasks by optimizing the weights assigned to different measurements. Importantly, this optimization does not require quantum resources and is efficiently computable on classical computers.

关键词： Quantum correlations in quantum information Quantum correlations, foundations & formalism Quantum foundations Quantum measurements

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A Novel Multiple Modes Resonant Sensor Featuring Blue Sideband Excitation

A Novel Multiple Modes Resonant Sensor Featuring Blue Sideba...

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IEEE International Conference on micro Electro Mechanical systems

作者： Jiao Xu Zhuoyue Zheng Jingqian Xi Ziqian Zhang Huafeng Liu Pan Zhang Jianlin Chen Chen Wang Michael Kraft Yuan Wang R. P. Martins Pui-In Mak MOE Key Laboratory of Fundamental Physical Quantities Measurement PGMF and School of Physics Huazhong University of Science and Technology Wuhan P. R. China Institute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated Circuits Peking University China School of Microelectronics Shanghai University China Department of Electrical Engineering-MNS KU Leuven Leuven Belgium

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper reports a novel MEMS resonant structure functioning as a baseline resonant electrostatic force/temperature sensor, highlighting its substantial potential in sensing applications. The resonator, characterized by a dual-cosine structure, is capable of simultaneous multiple resonant modes actuation within the 300 kHz range, through a sole-source drive approach using the recent emerging Blue Sideband Excitation (BSE) technique. This method enables a distinctive multi-modal response, essential for multi-parameter measurements. The research focuses on the sensor’s temperature characteristics, electrostatic perturbation sensitivity, and noise floor. Notably, the study reveals intriguing temperature responses across different modes, where certain modes exhibit a significant frequency rise with increasing temperature, this is counter-intuitive with common MEMS resonator devices, prompting further investigation into the underlying mechanisms. The analysis of electrostatic perturbation sensitivity and noise background further unfolds the resonator’s performance under various excitation conditions, laying a foundation for advancing sensor functionality, and providing solid evidence on the viability of the subject. To sum up, this study highlights the resonator’s potential as a high-precision sensor, opening new opportunities for MEMS sensor design and multi-parameter measurement applications.

关键词： Temperature measurement micromechanical devices Temperature sensors Electric potential Temperature Sensitivity Perturbation methods Noise Sensors Electrostatics

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Chirality tuning and reversing with resonant phase-change metasurfaces

arXiv

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arXiv 2024年

作者： Sha, Xinbo Du, Kang Zeng, Yixuan Lai, Fangxing Yin, Jun Zhang, Hanxu Song, Bo Han, Jiecai Xiao, Shumin Kivshar, Yuri Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin150080 China Nonlinear Physics Center Research School of Physics Australian National University CanberraACT2601 Australia Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Dynamic control of circular dichroism in photonic structures is critically important for compact spectrometers, stereoscopic displays, and information processing exploiting multiple degrees of freedom. Metasurfaces can help miniaturize chiral devices but only produce static and limited chiral responses. While external stimuli are able to tune resonances, their modulations are often weak, and reversing continuously the sign of circular dichroism is extremely challenging. Here, we demonstrate dynamically tunable chiral response of resonant metasurfaces supporting chiral bound states in the continuum combining them with phase-change materials. Phase transition between amorphous and crystalline phases allows to control chiral response and vary chirality rapidly from −0.947 to +0.958 backward and forward via chirality continuum. Our demonstrations underpin the rapid development of chiral photonics and its applications. © 2024, CC BY.

关键词： Chirality

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Magnetic phase transitions in the triangular-lattice spin-1 dimer compound K2Ni2(SeO3)3

arXiv

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arXiv 2023年

作者： Yue, Lei Lu, Ziyou Yan, Kun Wang, Le Guo, Shu Guo, Ruixin Chen, Peng Chen, Xiaobin Mei, Jia-Wei Department of Physics Southern University of Science and Technology Shenzhen518055 China School of Science State Key Laboratory on Tunable Laser Technology and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen518055 China International Quantum Academy Shenzhen518048 China Songshan Lake Materials Laboratory Dongguan Guangdong523808 China Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices Southern University of Science and Technology Shenzhen518055 China

In our study, we conduct magnetization and heat capacity measurements to investigate fieldinduced magnetic phase transitions within the newly synthesized compound K2Ni2(SeO3)3, a spin-1 dimer system arranged on a triangular lattice. From our first-principles simulations, we determine that the spin system in K2Ni2(SeO3)3 can be represented as a two-dimensional triangular-lattice spin-1 dimer model, including an intra-dimer exchange of J1 = 0.32 meV, an inter-dimer exchange of J2 = 0.79 meV, and an easy-axis anisotropy of D = 0.14 meV. The presence of easy-axis magnetic anisotropy explains the distinct magnetic phase diagrams observed under c-axis directional and in-plane magnetic fields. Notably, our investigation unveils a two-step phase transition with the magnetic field aligned with the c direction. Our findings yield valuable insights into the magnetic phase transitions inherent to geometrically frustrated magnetic systems featuring dimer structures. Copyright © 2023, The Authors. All rights reserved.

关键词： Selenium compounds

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Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

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Journal of Semiconductors 2022年第4期43卷 36-45页

作者： Luying Li Yongfa Cheng Zunyu Liu Shuwen Yan Li Li Jianbo Wang Lei Zhang Yihua Gao Center for Nanoscale Characterization&Devices Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan 430074China School of Physics and Technology Center for Electron MicroscopyMOE Key Laboratory of Artificial Micro-and Nano-Structuresand the Institute for Advanced StudiesWuhan UniversityWuhan 430072China Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Collaborative Innovation Center for Advanced Organic Chemical MaterialsSchool of Materials Science and EngineeringHubei UniversityWuhan 430062China

As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization technique off-axis electron holography is introduced in details, followed by its applications in various semiconductor nanomaterials including group IV, compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli. The advantages and disadvantages of off-axis electron holography in material analysis are discussed, the challenges facing in-situ electron holographic study of semiconductor devices at working conditions are presented, and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.

关键词： semiconductor nanostructure structure-property relationship off-axis electron holography electrostatic potential charge distribution

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A novel paper-based electrowetting device using cellulose paper and paraffin wax 26

A novel paper-based electrowetting device using cellulose pa...

引用

26th International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2022

作者： Li, He Yan, Zhibin Jin, Mingliang Zhou, Guofu Shui, Lingling Guangdong Provincial Key Laboratory of Optical Information Materials and Technology Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou510006 China Defense Key Disciplines Lab of Novel Micro-nano Devices and System Technology Chongqing University Chongqing400044 China School of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou510006 China Guangdong Shunde Innovative Design Institute Guangdong Foshan528318 China

ISBN: (纸本)9781733419048

Paper-based microfluidic devices based on continuous-flow (μPAD) and electrowetting on dielectric (EWOD), have attracted increasing attention due to their low cost and excellent liquid handling capability. Here, we report a novel paper-based EWOD devices fabricated with the cellulose paper as substrate and paraffin wax as dielectric layer, which have been widely used in μPAD. Two methods are proposed to fabricate paraffin wax layer, including melting and spray-coating. Under DC electric field, the spray-coating-based devices show larger contact angle changes but with smaller hysteresis than the melting-based one. Our study opens up a new way for fabrication of the hybrid paper-based microfluidic device in the future. © 2022 microTAS 2022 - 26th International Conference on Miniaturized systems for Chemistry and Life sciences. All rights reserved.

关键词： Wetting

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Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga_(2)O_(3) substrate

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Chinese Physics B 2021年第1期30卷 483-486页

作者： Xu-Long Chu Zeng Liu Yu-Song Zhi Yuan-Yuan Liu Shao-Hui Zhang Chao Wu Ang Gao Pei-Gang Li Dao-You Guo Zhen-Ping Wu Wei-Hua Tang Laboratory of Information Functional Materials and Devices School of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co. Ltd.(Beijing)Beijing 100195China Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and TelecommunicationsNanjing 210046China

We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky *** device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 *** addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered *** work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.

关键词： β-Ga_(2)O_(3)substrate Schottky photodiode solar-blind detection

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Field-free current-induced magnetization switching of a room temperature van der Waals magnet for neuromorphic computing

arXiv

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arXiv 2024年

作者： Zhou, Chenxi Guo, Zhe Li, Qifeng Zhang, Gaojie Wu, Hao Chen, Jinsen Li, Rongxin Zhang, Shuai Cao, Cuimei Xiong, Rui Chang, Haixin You, Long School of Integrated Circuits Wuhan National Laboratory for Optoelectronics Key Laboratory of Information Storage System Ministry of Education of China Huazhong University of Science and Technology Wuhan430074 China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen518000 China School of Microelectronics Hubei University Wuhan430062 China School of Integrated Circuits Wuhan430074 China Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education School of Physics and Technology Wuhan University Wuhan430072 China Center for Joining and Electronic Packaging State Key Laboratory of Material Processing and Die & Mold Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan430074 China

Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which can be readily acquired by using the two-dimensional (2D) van der Waals (vdW) materials. Recently, a 2D ferromagnetic material Fe3GaTe2 has been discovered to possess the above-room-temperature Curie temperature and strong perpendicular magnetic anisotropy (PMA), providing an excellent candidate to build spintronic devices. On the other hand, an external magnetic field is necessary for the SOT-driven deterministic switching of perpendicular magnetization, which has become a block for the real applications. Here, we realize the field-free SOT switching of Fe3GaTe2 at room temperature based on the Fe3GaTe2/MnPt heterostructure. In addition, inspired by the superiority of 2D materials in 3D heterogeneous integration, we explore the potential of our device in the computing in memory (CIM). With the application of the current pulses, the gradual switching of our device at zero field imitates the function of artificial synapse in the convolutional neural network (CNN), achieving a high accuracy (~ 92.8%) pattern recognition. Our work proposes a feasible solution for field-free SOT switching in 2D vdW spintronic devices, which paves the way for applications in magnetic memory and neuromorphic computing. Copyright © 2024, The Authors. All rights reserved.

关键词： Van der Waals forces

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Bottom-Up Nucleation Induced Conformal Crystallization For Inverted Ma-Free Perovskite Solar Cells on Textured Substrates

SSRN

引用

SSRN 2024年

作者： Liu, Ruochen Xu, Jiawei Hu, Tianxiang Li, Xiang Wang, Kongxiang Huang, Qi Duan, Zhongtao Liu, Hong Qian, Weifan Zhou, Haiting Cong, Chunxiao Yue, Xiaofei Zhang, Hong Xie, Fengxian Institute for Electric Light Sources School of Information Science and Technology Fudan University Shanghai200438 China Department of Materials Science National Engineering Lab for TFT-LCD Materials and Technologies Fudan University Shanghai200433 China Center for Micro Nano Systems School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of ASIC & System School of Information Science and Technology Fudan University Shanghai200438 China State Key Laboratory of Photovoltaic Science and Technology Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200438 China

Utilizing textured fluorine-doped tin oxides (FTO) as transparent conductive oxide (TCO) substrates is advantageous for capturing incident light, thereby enhancing the power photoelectric conversion efficiency (PCE) of inverted perovskite solar cells (PSCs). However, the roughness of these substrates and uncontrolled nucleation often results in voids at the perovskite-buried surface, leading to insufficient charge extraction and serving as degradation initiation points. This study introduces (S)-3-amino-4-(4-chlorophenyl)butyric acid hydrochloride (AbaCl), which binds to FTO through its anchor group (–COOH) at the deficient regions of MeO-4PACz. Moreover, the chlorine end molecules offer active sites for nucleation by forming halogen bonds with undercoordinated iodide ions (I–). AbaCl also interacts with formamidinium (FA+) in perovskite precursor solution via hydrogen bonding, promoting crystallization at the buried interface. Consequently, nucleation at this buried interface becomes preferential, ensuring bottom-up growth and preventing voids formation due to incomplete solvent evaporation, allowing the perovskite layer to conformally adhere to the substrate without gaps. As a result, the AbaCl-treated inverted PSCs achieved a champion PCE of 24.5% and exhibited enhanced operational stability. This work presents a method for conformally growing perovskite films on textured substrates to produce efficient and stable PSCs. © 2024, The Authors. All rights reserved.

关键词： Hydrogen bonds

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