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Raman scattering study of two-dimensional magnetic van der Waals compound VI3

Chinese Physics B 2020年第5期29卷 420-423页

作者： Yi-Meng Wang Shang-Jie Tian Cheng-He Li Feng Jin Jian-Ting Ji He-Chang Lei Qing-Ming Zhang Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices Renmin University of ChinaBeijing 100872China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China

The layered magnetic van der Waals materials have generated tremendous interest due to their potential applications and importance in fundamental *** x-ray diffraction(XRD)studies on the magnetic van der Waals compound VI3,revealed a structural transition above the magnetic transition but output controversial analysis on *** this paper we carried out polarized Raman scattering measurements on VI3 from 10 K to 300 K,with focus on the two Ag phonon modes at^71.1 cm^-1 and 128.4 *** careful symmetry analysis based on the angle-dependent spectra demonstrates that the crystal symmetry can be well described by C2h rather than D3d both above and below structural phase *** further performed temperature-dependent Raman experiments to study the magnetism in *** asymmetry and anomalous linewidth drop of two Ag phonon modes at low temperatures,point to a significant spin-phonon *** is also supported by the softening of 71.1-cm^-1 mode above the magnetic *** study provides the fundamental information on lattice dynamics and clarifies the symmetry in *** spin-phonon coupling existing in a wide temperature range revealed here may be meaningful in applications.

关键词： Raman scattering two-dimensional magnetic van der Waals materials lattice dynamics magnetism

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Quantization of the band at the surface of charge density wave material 2H-TaSe_(2)

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Chinese Physics B 2021年第4期30卷 106-112页

作者： Man Li Nan Xu Jianfeng Zhang Rui Lou Ming Shi Lijun Li Hechang Lei Cedomir Petrovic Zhonghao Liu Kai Liu Yaobo Huang Shancai Wang Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices Renmin University of ChinaBeijing 100872China Shanghai Synchrotron Radiation Facility Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201204China Institute of Advanced Studies Wuhan UniversityWuhan 430072China Swiss Light Source Paul Scherrer InstituteCH-5232 VilligenSwitzerland Chongqing Technology and Busineee University Chongqing 400067China Condensed Matter Physics and Materials Science Department Brookhaven National LaboratoryUptonNY 11973USA State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics SIMITChinese Academy of SciencesShanghai 200050China

By using angle-resolvea photoemission spectroscopy(ARPES) combined with the first-principies electronic structure calculations,we report the quantized states at the surface of a single crystal 2 H-TaSe_(2).We have observed sub-bands of quantized states at the three-dimensional Brillouin zone center due to a highly dispersive band with light effective mass along k_(z) *** quantized sub-bands shift upward towards E_(F) while the bulk band at Γ shifts downward with the decrease of temperature across charge density wave(CDW) *** band shifts could be intimately related to the *** neither the two-dimensional Fermi-surface nesting nor purely strong electron-phonon coupling can explain the mechanism of CDW in 2 H-TaSe_(2),our experiment may ignite the interest in understanding the CDW mechanism in this family.

关键词： angle-resolved photoemission spectroscopy transition metal dichalcogenide TaSe_(2)

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Local probe of the interlayer coupling strength of few-layers SnSe by contact-resonance atomic force microscopy

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Frontiers of physics 2020年第6期15卷 105-113页

作者： Zhi-Yue Zheng Yu-Hao Pan Teng-Fei Pei Rui Xu Kun-Qi Xu Le Lei Sabir Hussain Xiao-Jun Liu Li-Hong Bao Hong-Jun Gao Wei Ji Zhi-Hai Cheng State Key Laboratory of Digital Manufacturing Equipment and Technology School of Mechanical Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Key Laboratory of Inorganic Functional Materials and Devices Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nano science and TechnologyBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China China North Vehicle Research Institute BeijingChina

The interlayer bonding in two-dimensional(2D)materials is particularly important because it is not only related to their physical and chemical stability but also afects their mechanical,thermal,elec-tronic,optical,and other *** address this issue,we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy(CR-AFM)*** ***-specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2/Si substrate *** on the cantilever and contact mechanic models,the contact stifness and vertical Young's modulus are evaluated in comparison with SiO2/Si as a reference *** interlayer bonding of SnSe is further analyzed in combination with the semi-analytical model and density functional theory *** direct characteriza-tion of interlayer interactions using this non-destructive methodology of CR-AFM would facilitate a better understanding of the physical and chemical properties of 2D layered materials,specifically for interlayer intercalation and vertical heterostructures.

关键词： 2D materials interlayer bonding contact-resonance atomic force microscopy density functional theory

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Degenerate antiferromagnetic states in spinel oxide LiV2O4

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Chinese Physics B 2020年第7期29卷 542-547页

作者： Ben-Chao Gong Huan-Cheng Yang Kui Jin Kai Liu Zhong-Yi Lu Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials&Micro-nano Devices Renmin University of ChinaBeijing 100872China Beijing Computational Science Research Center Beijing 100193China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Collaborative Innovation Center of Quantum Matter Beijing 100190China

The magnetic and electronic properties of spinel oxide LiV2O4 have been systematically studied by using the spin-polarized first-principles electronic structure *** find that a series of magnetic states,in which the ferromagnetic(FM)V4 tetrahedra are linked together through the corner-sharing antiferromagnetic(AFM)V4 tetrahedra,possess degenerate energies lower than those of other spin *** large number of these energetically degenerated states being the magnetic ground state give rise to strong magnetic frustration as well as large magnetic entropy in *** corresponding band structure and density of states of such a typical magnetic state in this series,i.e.,the ditetrahedron(DT)AFM state,demonstrate that LiV2O4 is in the vicinity of a metal-insulator *** analysis suggests that the t2g and eg orbitals of the V atoms play different roles in the magnetic exchange *** calculations are consistent with previous experimental measurements and shed light on understanding the exotic magnetism and the heavy-fermion behavior of LiV2O4.

关键词： spinel oxide magnetic properties heavy fermion first-principles calculations

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High-Temperature Anomalous Metal States in Iron-Based Interface Superconductors

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Physical Review Letters 2024年第22期132卷 226003-226003页

作者： Yanan Li Haiwen Liu Haoran Ji Chengcheng Ji Shichao Qi Xiaotong Jiao Wenfeng Dong Yi Sun Wenhao Zhang Zihan Cui Minghu Pan Nitin Samarth Lili Wang X. C. Xie Qi-Kun Xue Yi Liu Jian Wang International Center for Quantum Materials School of Physics Peking University Beijing 100871 China Department of Physics The Pennsylvania State University University Park Pennsylvania 16802 USA Center for Advanced Quantum Studies Department of Physics Beijing Normal University Beijing 100875 China Hefei National Laboratory Hefei 230088 China State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China School of Physics and Information Technology Shaanxi Normal University Xi’an 710119 China School of Physics and Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan 430074 China Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin University of China Beijing 100872 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai 200433 China Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Renmin University of China Beijing 100872 China

The nature of the anomalous metal state has been a major puzzle in condensed matter physics for more than three decades. Here, we report systematic investigation and modulation of the anomalous metal states in high-temperature interface superconductor FeSe films on SrTiO3 substrate. Remarkably, under zero magnetic field, the anomalous metal state persists up to 20 K in pristine FeSe films, an exceptionally high temperature standing out from previous observations. In stark contrast, for the FeSe films with nanohole arrays, the characteristic temperature of the anomalous metal state is considerably reduced. We demonstrate that the observed anomalous metal states originate from the quantum tunneling of vortices adjusted by the Ohmic dissipation. Our work offers a perspective for understanding the origin and modulation of the anomalous metal states in two-dimensional bosonic systems.

关键词： Superconductivity Transport phenomena Crystalline systems Thin films Cryogenics Molecular beam epitaxy Resistivity measurements

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Real-space visualization of intercalated water phases at the hydrophobic graphene interface with atomic force microscopy

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Frontiers of physics 2020年第2期15卷 69-77页

作者： Zhi-Yue Zheng Rui Xu Kun-Qi Xu Shi-Li Ye Fei Pang Le Lei Sabir Hussain Xin-Meng Liu Wei Ji Zhi-Hai Cheng Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing 100190China State Key Laboratory of Digital Manufacturing Equipment and Technology Department of Instrument Science and TechnologySchool of Mechanical Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China University of Chinese Academy of Sciences Beijing 100039China

The phase behavior of water is a topic of perpetual interest due to its reinai kable anomalous properties and importance to biology,material science,geoscience,nanoscience,*** is predicted confined water at interface can exist in large amounts of crystalline or amorphous ***,the experimental evidence of coexistence of liquid water phases at interface is still ***,a special folding few-layers graphene film was elaborate prepared to form a hydrophobic/hydrophobic interface,which can provide a suited platform to study the structure and properties of confined liquid *** real-space visualization of intercalated water layers phases at the folding interface is obtained using advanced atomic force microscopy(AFM).The folding graphene interface displays complicated internal interfacial *** intercalated water molecules present themselves as two phases,low-density liquid(LDL,solid-like)and high-density liquid(HDL,liquid-like),according to their specific mechanical properties taken in two multifrequency-AFM(MF-AFM)***,the water molecules structural evolution is demonstrated in a series of continuous MF-AFM *** work preliminary confirms the existence of two liquid phases of water in real space and will inspire further experimental work to deeply understanding their liquid dynamics behavior.

关键词： 2D material interfacial intercalation coexistence of liquid water phases multifrequency-AFM hydrophobic graphene interface

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Localization of Chiral Edge States by the Non-Hermitian Skin Effect

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Physical Review Letters 2024年第11期132卷 113802-113802页

作者： Gui-Geng Liu (刘癸庚) Subhaskar Mandal Peiheng Zhou Xiang Xi Rimi Banerjee Yuan-Hang Hu Minggui Wei Maoren Wang Qiang Wang Zhen Gao Hongsheng Chen Yihao Yang Yidong Chong Baile Zhang Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore 637371 Singapore National Engineering Research Center of Electromagnetic Radiation Control Materials State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China School of Electrical Engineering and Intelligentization Dongguan University of Technology Dongguan 523808 China School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing Jiangsu 210093 China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Science and Technology Innovation Center College of Information Science and Electronic Engineering Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart Systems of Zhejiang ZJU-UIUC Institute Zhejiang University Hangzhou 310027 China Centre for Disruptive Photonic Technologies The Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

Quantum Hall systems host chiral edge states extending along the one-dimensional boundary of any two-dimensional sample. In solid state materials, the edge states serve as perfectly robust transport channels that produce a quantized Hall conductance; due to their chirality, and the topological protection by the Chern number of the bulk band structure, they cannot be spatially localized by defects or disorder. Here, we show experimentally that the chiral edge states of a lossy quantum Hall system can be localized. In a gyromagnetic photonic crystal exhibiting the quantum Hall topological phase, an appropriately structured loss configuration imparts the edge states’ complex energy spectrum with a feature known as point-gap winding. This intrinsically non-Hermitian topological invariant is distinct from the Chern number invariant of the bulk (which remains intact) and induces mode localization via the “non-Hermitian skin effect.” The interplay of the two topological phenomena—the Chern number and point-gap winding—gives rise to a non-Hermitian generalization of the paradigmatic Chern-type bulk-boundary correspondence principle. Compared to previous realizations of the non-Hermitian skin effect, the skin modes in this system have superior robustness against local defects and disorders.

关键词： Edge states Photonic crystals Quantum Hall effect Chern insulators Non-Hermitian systems

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Symbiotic evolution of photonics and artificial intelligence: a comprehensive review

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Advanced Photonics 2025年第2期 8-85页

作者： Fu Feng Dewang Huo Ziyang Zhang Yijie Lou Shengyao Wang Zhijuan Gu Dong-Sheng Liu Xinhui Duan Daqian Wang Xiaowei Liu Ji Qi Shaoliang Yu Qingyang Du Guangyong Chen Cuicui Lu Yu Yu Xifeng Ren Xiaocong Yuan Zhejiang Lab Research Center for Frontier Fundamental Studies Westlake Institute for Optoelectronics Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization Beijing Institute of Technology School of Physics Center for Interdisciplinary Science of Optical Quantum and NEMS Integration Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics University of Science and Technology of China CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence in Quantum Information and Quantum Physics Zhejiang Lab Research Center for Life Sciences Computing

The rapid advancement of artificial intelligence(AI) has significantly impacted photonics, creating a symbiotic relationship that accelerates the development and applications of both fields. From the perspective of AI aiding photonics, deep-learning methods and various intelligent algorithms have been developed for designing complex photonic structures, where traditional design approaches fall short. AI's capability to process and analyze large data sets has enabled the discovery of novel materials, such as for photovoltaics,leading to enhanced light absorption and efficiency. AI is also significantly transforming the field of optical imaging with improved performance. In addition, AI-driven techniques have revolutionized optical communication systems by optimizing signal processing and enhancing the bandwidth and reliability of data transmission. Conversely, the contribution of photonics to AI is equally profound. Photonic technologies offer unparalleled advantages in the development of AI hardware, providing solutions to overcome the bottlenecks of electronic systems. The implementation of photonic neural networks, leveraging the high speed and parallelism of optical computing, demonstrates significant improvements in the processing speed and energy efficiency of AI computations. Furthermore, advancements in optical sensors and imaging technologies not only enrich AI applications with high-quality data but also expand the capabilities of AI in fields such as autonomous vehicles and medical imaging. We provide comprehensive knowledge and a detailed analysis of the current state of the art, addressing both challenges and opportunities at the intersection of AI and photonics. The multifaceted interactions between AI and photonics will be explored, illustrating how AI has become an indispensable tool in the development of photonics and how photonics, in turn,facilitates advancements in AI. Through a collection of case studies and examples, we underscore the potential

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Hysteretic electronic phase transitions in correlated charge density wave state of 1T−TaS2

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Physical Review B 2023年第19期107卷 195401-195401页

作者： Yanyan Geng Le Lei Haoyu Dong Jianfeng Guo Shuo Mi Yan Li Li Huang Fei Pang Rui Xu Weichang Zhou Zheng Liu Wei Ji Zhihai Cheng Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices Department of Physics Renmin University of China Beijing 100872 People's Republic of China Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Renmin University of China Beijing 100872 People's Republic of China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 People's Republic of China Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education College of Physics and Information Science Hunan Normal University Changsha 410081 People's Republic of China Institue for Advanced Study Tsinghua University Beijing 100084 People's Republic of China

The layered transition metal dichalcogenide 1T−TaS2 has evoked great interest owing to its particularly rich electronic phase diagram including different charge density wave (CDW) phases. However, few studies have focused on its hysteretic electronic phase transitions based on the in-depth discussion of the delicate interplay among temperature-dependent electronic interactions. Here, we report a sequence of spatial electronic phase transitions in the hysteresis temperature range (160–230 K) of 1T−TaS2 via variable-temperature scanning tunneling microscopy. Several emergent electronic states are investigated at multiscale during the commensurate CDW–triclinic CDW (CCDW-TCDW) phase transitions: a spotty-CDW state above ∼160K, a network-CDW (NCDW) state above ∼180K during the warmup process, a belt-TCDW state below ∼230K, a NCDW state below ∼200K, and finally a mosaic-CDW state below ∼160K during cooldown from the TCDW phase. These emergent electronic states are associated with the delicate temperature-dependent competition and/or cooperation of stacking-dependent interlayer interactions, intralayer electron-electron correlations, and electron-phonon (e−ph) coupling of 1T−TaS2. Our results not only provide insight to understand the hysteretic electronic phase transitions in the correlated CDW state, but also pave a way to realize more exotic quantum states by accurately and effectively tuning various interior interactions in correlated materials.

关键词： Charge density waves Density of states Electrical properties Magnetic phase transitions 2-dimensional systems Transition metal dichalcogenides Scanning techniques Scanning tunneling microscopy Scanning tunneling spectroscopy

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Deterministic two-photon controlled-Z gate with the two-photon quantum Rabi model

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Physical Review A 2025年第5期111卷 052601-052601页

作者： Jia-Cheng Tang Jin Zhao Haitao Yang Junlong Tian Pinghua Tang Shuai-Peng Wang Lucas Lamata Jie Peng Hunan Key Laboratory for Micro-Nano Energy Materials and Devices and School of Physics and Optoelectronics Xiangtan University Xiangtan Hunan 411105 China Beijing Academy of Quantum Information Sciences Beijing 100193 China School of Fundamental Physics and Mathematical Sciences Hangzhou Institute for Advanced Study UCAS Hangzhou Zhejiang 310024 China School of Physics and Electronic Information Engineering Zhaotong University Zhaotong Yunnan 657000 China Department of Electronic Science College of Big Data and Information Engineering Guizhou University Guiyang Guizhou 550025 China Departamento de Física Atómica Molecular y Nuclear Universidad de Sevilla 41080 Sevilla Spain

We propose a scheme for realizing a deterministic two-photon controlled-Z (cz) gate based on variants of the two-photon quantum Rabi model, which is feasible within the framework of circuit QED. We begin by utilizing the two-photon interaction to implement the nonlinear sign gate and subsequently we construct the cz gate following the Knill-Laflamme-Milburn scheme [Nature (London) 409, 46 (2001)]. We consider three different regimes: the strong-coupling regime, the perturbative ultrastrong-coupling regime, and the large-detuning regime. Our results indicate that the cz gate operates fast with high fidelity. We also show that the photonic state in the waveguide can be input into the circuit QED system through a variable coupler and released after interaction with almost the same waveform except for a π-phase shift. Our scheme offers a suitable approach for achieving fast and deterministic two-photon quantum gates via light-matter interactions.

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