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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process 17

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

作者： Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China

ISBN: (纸本)9780738111889

The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS process. Moreover, the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time, and the wafer yield of GaN high electron mobility transistor (HEMT) with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4 %. Besides, the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA), the resist width and gate length are about 0.15 μm and 0.2 μm. It is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2 %. Comparing with the results of deep ultra-violet (DUV) lithography, the electrical and radio frequency (RF) characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable. © 2020 IEEE.

关键词： Gallium nitride

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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Chinese Optics Letters 2019年第6期17卷 36-40页

作者： Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I *** modulator was fabricated on a 3 *** epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,*** results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.

关键词： optical Mach multiple plasma wave was dB

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Efficient immersion cooling for electronic devices based on multi-physics field coupling

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International Journal of Thermal sciences 2025年 215卷

作者： Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou 215009 China School of Energy and Environment Southeast University Jiangsu Nanjing 210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong 226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing 210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei 230031 China

Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfer model for electronic devices using immersion cooling and serpentine channel cooling. The multi-physics field coupling analysis of electronic devices with different cooling methods is carried out, focusing on the influences of input voltage, inlet coolant mass flow rate, and coolant type. The results indicate that multi-physics field coupling effects in electronic devices lead to a temperature increase of 1.8 %∼17.8 %, a rise in current density of 235 %∼245 %, and a maximum displacement increase of 0.12 μm. Moreover, the temperature, output current, and strain energy density of electronic devices increase with higher input voltage but decrease with higher inlet mass flow rate. Coolant type significantly influences the thermal and mechanical performance of electronic devices but has relatively minor effect on their electrical characteristics. Compared to serpentine channel cooling, immersion cooling reduces discrepancies in temperature, current density, and strain energy density by 23.4 %, 10.8 %, and 70 %, respectively, with and without multi-physics field coupling, effectively mitigating the multi-physics field coupling effect. Under multi-physics field coupling conditions, the thermal management advantages of immersion cooling become increasingly apparent compared to serpentine channel cooling with increasing electric potential, while differences in electrical performance remain minimal. © 2025

关键词： Electronic devices Heat transfer performance Immersion cooling Multi-physics field coupling

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System 15

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Jiang, Ziqian Xu, Jie Li, Xiaopeng Zhang, Youtao Zhang, Changchun Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9798350338874

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average. © 2023 IEEE.

关键词： Analog to digital conversion

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InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...

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IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging 21

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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21st International Conference on Electronic Packaging technology, ICEPT 2020

作者： Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China

ISBN: (纸本)9781728168265

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 µm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 µm2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration. © 2020 IEEE.

关键词： Temperature

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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14 W X-band AlGaN/GaN HEMT power MMICs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第6期29卷 1027-1030页

作者： Chen, Tangsheng Zhang, Bin Ren, Chunjiang Jiao, Gang Zheng, Weibin Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

The development of an AlGaN/GaN HEMT power MMIC on Sl-SiC designed in microstrip technology is presented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10 W with over 12 dB power gain across the band of 9-11 GHz at a drain bias of 30 V. Peak output power inside the band reaches 14.7 W with a power gain of 13.7 dB and a PAE of 23%. The MMIC chip size is only 2.0 mm × 1.1 mm. This work shows superiority over previously reported X-band AlGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.

关键词： monolithic microwave integrated circuits

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