检索结果-内蒙古大学图书馆

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第9期28卷 1333-1336页

作者： Chen, Gang Li, Zheyang Bai, Song Ren, Chunjiang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes (SBDs). The ideality factor n = 1.08 and effective Schottky barrier height ψ = 1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V). A low reverse leakage current below 5.96 × 10-3A/cm2 at a bias voltage of -1.1kV was obtained. By using B+ implantation, an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm2 at a forward voltage drop of about 4V. The specific on-resistance Ron was found to be 6.77mΩ · cm2.

关键词： Schottky barrier diodes

来源：评论

学校读者我要写书评

暂无评论

Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

引用

2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

来源：评论

学校读者我要写书评

暂无评论

Approaches for improving LO-RF isolation of MMIC 90°-hybrid-IRM

Approaches for improving LO-RF isolation of MMIC 90°-hybrid...

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yiming Shen Longxin Peng National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device Institute China

Image reject mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced Schottky diode mixer using 90deg hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced Schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods.

关键词： MMICs Radio frequency Schottky diodes Voltage Mixers RF signals Acoustic reflection PHEMTs Dynamic range circuits

来源：评论

学校读者我要写书评

暂无评论

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息

关键词： m InP/InGaAs DHBT InGaAs InP Static Frequency Divider Based On 0.5

来源：评论

学校读者我要写书评

暂无评论

Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

引用

Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 181-185页

作者： Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Substrates

来源：评论

学校读者我要写书评

暂无评论

A design of multiport waveguide power combiner

A design of multiport waveguide power combiner

引用

International Conference on Solid-State and integrated Circuit technology

作者： Jie Cai Yunsheng Luo Liqun Wu National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

A method of X-band power combining using rectangular waveguide is proposed and studied in this paper. Waveguide combiner has good efficiency, which is suitable for power combining at higher frequencies and higher power levels especially. We fabricated the waveguide combiner by accurate process, and VSWR<1.2, Loss<0.2 dB over 600M bandwidth with combining efficiency of 95% at center frequency is achieved. Measured results show a good agreement with simulated ones.

关键词： Power combiners Electromagnetic waveguides Planar waveguides Frequency High power amplifiers Impedance matching Insertion loss Rectangular waveguides Degradation Power system reliability

来源：评论

学校读者我要写书评

暂无评论

107W CW SiC MESFET with 48.1% PAE

107W CW SiC MESFET with 48.1% PAE

引用

2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

关键词： SiC MESFET CW load-pull MESFETs load-pull Output power Gain

来源：评论

学校读者我要写书评

暂无评论

Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Passivation of InGaAs/InP double heterostructure bipolar transistors（DHBTs） with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP heterostructure bipolar transistor silicon nitride passivation

来源：评论

学校读者我要写书评

暂无评论

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

引用

2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transcooductance 200 mS/mm was obtained with lum gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.

关键词： Gallium nitride HEMTs Dielectrics and electrical insulation Dielectric materials Metal-insulator structures High-K gate dielectrics Binary search trees Chemical vapor deposition MOCVD Inorganic materials

来源：评论

学校读者我要写书评

暂无评论

A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emitters

A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emi...

引用

2008 International Conference on Microwave and Millimeter Wave technology(2008国际微波毫米波技术会议)

作者： Yan Zhao Zheng Zhang Jianfeng Gao National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute210016

InP/InGaAs/lnP double heteroj unction bipolar transistors(DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1×10μm have demonstrated a p... 详细信息

关键词： Indium phosphide Indium gallium arsenide Etching DH-HEMTs Resists Heterojunction bipolar transistors Differential amplifiers Optical amplifiers High power amplifiers Low-noise amplifiers

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：