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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

Journal of Semiconductors 2015年第9期36卷 54-57页

作者：黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.

关键词： 4H-SiC MOSFET interface state

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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

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High technology Letters 2015年第1期21卷 85-89页

作者：姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

关键词： frequency doubler planar schottky diode quartz substrate efficiency

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Research on TSV dry etching technology

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key Engineering Materials 2015年 645卷 216-220页

作者： Jiang, Guoqing Kuang, Lei Zhu, Jian Nanjing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP (inductively coupled plasma) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper. © (2015) Trans Tech Publications, Switzerland.

关键词： Three dimensional integrated circuits

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Measurement and modeling techniques for InP-based HBT devices to 220GHz

Measurement and modeling techniques for InP-based HBT device...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Haiyan Lu Wei Cheng Zhijiang Zhou Oupeng Li Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu China

ISBN: (纸本)9781509018314

In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters extraction. Small signal equivalent circuit for InP DHBT up to 220GHz is also demonstrated. Excellent agreements between measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz. A six-stage amplifier MMIC designed based on the HBT model is also presented. Measurement results show that the small signal gain of the amplifier is greater than 15 dB over 140-190 GHz.

关键词： Conferences Electron devices Solid state circuits

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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Chinese Physics Letters 2015年第7期32卷 175-178页

作者：牛斌王元程伟谢自力陆海燕常龙谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

关键词： InP InGaAs Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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A high linearity X-band SOI CMOS digitally-controlled phase shifter

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Journal of Semiconductors 2015年第6期36卷 115-122页

作者：陈亮陈新宇张有涛李智群杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.

关键词： digitally-controlled phase shifter CMOS technology T/R module

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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN 4th

On-chip integrated inductors with NiFe-SiOx magnetic thin fi...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781138028302

Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventional GaN-based MMIC process. On-wafer measured results showed that an additional resonant absorption happened in the inductors with magnetic films at lower frequencies. An improved equivalent circuit model that takes into account magnetic absorption was developed for characterizing the phenomenon and good fitting results were acquired up to 11.6 GHz. © 2015 Taylor & Francis Group, London.

关键词： III-V semiconductors

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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer 4th

AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781138028302

The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vapor Deposition (PECVD). The SiN film worked as the passivation and gate-insulating layers. Al/Ni/Au ohmic was proposed for its good contact performance at a lower annealing temperature compared with Ti/Al/Ni/Au ohmic and the lowest specific contact resistance was 7.59 × 10-6 Ω∙cm2. The fabricated Metal Insulatingsemiconductor High Electron Mobility Transistors (MIS-HEMTs) with a gate length of 1 μm had a maximum drain current density of 624 mA/mm and a peak extrinsic transconductance of 110 mS/mm. © 2015 Taylor & Francis Group, London.

关键词： Plasma enhanced chemical vapor deposition

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Fabrication and application of 1.7KV SiC-Schottky diodes

Fabrication and application of 1.7KV SiC-Schottky diodes

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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014

作者： Chen, G. Bai, S. Liu, A. Wang, L. Huang, R.H. Tao, Y.H. Li, Y. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038354789

High voltage 4H-SiC Ni metal junction barrier schottky (JBS) diode with reverse breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5 A/cm2 at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF = 1.7 V and 15.8 A at VF = 3 V. The chip is 2.52mm × 2.52 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 8.7 mΩ·cm2. The optimal structure (doping and thickness of the N-type drift layer) has been determined by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 18.5 μm, and the doping concentration is 3.2×1015 cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 μm ~ 1.3 μm that has little effect on the reverse I-V characteristics of the JBS diodes, and the width of the p-rings is 2.5 μm. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse current Ir was 1.26 A and the reverse recovery time Trr was 26 ns which corresponds to a maximum switching frequency of 38.46 MHz, when the diode was switched from 5 A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrr of 16 nC was obtained. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Study of SiC's mechanical property variance caused by film thickness

Study of SiC's mechanical property variance caused by film t...

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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014

作者： Jiao, Zonglei Zhu, Jian NanJing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

ISBN: (纸本)9783038354628

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm, 4.5μm, 9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa;4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa;9μm SiC thin film: E=167.96Gpa, H=9.48Gpa. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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