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检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"
242 条 记 录,以下是131-140 订阅
排序:
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
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IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
Developing the Ka-band GaN Power HEMT devices
Developing the Ka-band GaN Power HEMT devices
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2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)
作者: J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using... 详细信息
来源: 评论
Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer
Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other subs... 详细信息
来源: 评论
The research of heterogeneous integration based on epitaxial layer transfer technology
The research of heterogeneous integration based on epitaxial...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: LiShu Wu Yan Zhao Wei Cheng Zi Qian Huang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the... 详细信息
来源: 评论
AlGaN/GaN HEMTs on Si(100) substrate
AlGaN/GaN HEMTs on Si(100) substrate
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Yan Zhao Cen Kong Lishu Wu Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices... 详细信息
来源: 评论
A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology  14
A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...
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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022
作者: Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
来源: 评论
24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz
24.8 A W-Band Power Amplifier with Distributed Common-Source...
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IEEE International Conference on Solid-State circuits (ISSCC)
作者: Weibo Wang Fangjin Guo Tangsheng Chen Keping Wang Tianjin University Tianjin China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output powe... 详细信息
来源: 评论
A technology-independent table-based model for advanced GaN Schottky barrier diodes
A technology-independent table-based model for advanced GaN ...
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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)
作者: Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore
In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmi... 详细信息
来源: 评论
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array
A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...
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International Symposium on Antennas and Propagation (ISAP)
作者: Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo...
来源: 评论
Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter
Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter
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2008 9th International Conference on Solid-State and integrated-Circuit technology
作者: Pan Xiaofeng Shen Ya National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China
This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing 0.25-um PHEMT *** developed 6-bit phase shifter demonstrates an overall phase deviation less than 1.5 rnis and ... 详细信息
来源: 评论