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Development of 10 kV 4H-SiC JBS diode with FGR termination

Journal of Semiconductors 2014年第7期35卷 56-59页

作者：黄润华陶永洪曹鹏飞汪玲陈刚柏松栗瑞李赟赵志飞 Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.

关键词： 4It-SiC JBS diodes edge termination floating guard rings

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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IEEE International Conference on Communication Problem-Solving

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.

关键词： Indium phosphide (InP) Heterojunction bipolar transistors (HBTs) Millimeter-wave monolithic integrated circuit (MMIC) Amplifier D-band Thin-film microstrip (TFM)

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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2015 International Conference on Communication Problem-Solving(ICCP)

We present a compact, 3-stage millimeter-wave monolithic integrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film microstrip(TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported In P DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm ×0.88 mm.

关键词： Indium phosphide(InP) Heterojunction bipolar transistors(HBTs) Millimeter-wave monolithic integrated circuit(MMIC) Amplifier D-band thin-film microstrip(TFM)

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A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

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IEEE International Conference on Communication Problem-Solving

作者： Xiao Li Oupeng Li Yan Sun Wei Cheng Lei Wang Ruimin Xu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute School of Electronic Engineering University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um~2, f_T of 250 GHz and f_(max) of 320 GHz at I_c = 12mA and V_(CE) = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor Amplifier Millimeterwave G-band monolithic microwave integrated circuit (MMIC)

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A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

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2015 International Conference on Communication Problem-Solving(ICCP)

A four-stage amplifier MMIC operating at G-Band（140-220GHz） is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um, f of 250 GHz and f of 320 GHz at I=12mA and V=1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than-10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor ampli-fier millimeterwave G-band monolithic microwave integrated circuit(MMIC)

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100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs D...

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IEEE International Conference on Communication Problem-Solving

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design ... 详细信息

ISBN: (纸本)9781467365451

关键词： frequency dividers Static frequency divider Double heterojunction bipolar transistors Capacitors FILM RESISTORS THIN FILM RESISTORS

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience & technology, China 2015

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Physics Nanjing University Institute of High Performance Computing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides. The measured field-effect mobility thus far, however, is much smaller than theoretical predictions, dominated by extrinsic factors including charge traps and impurities. Here, we report that the combination of high-quality Al2O3 dielectric substrate and thiol chemistry passivation could effectively reduce the interface traps and Coulomb impurities, leading to a significant improvement of device performances. Especially, metallic transport is observed at higher carrier density and low temperature. Moreover, through repairing sulfur vacancies, record high mobility is reached at room temperature(83 cm2V-1s-1) and low temperature(337 cm2V-1s-1). Furthermore, we develop a theoretical model for explaining charge transport in the monolayer WS2. Our work provides a viable route towards studying intrinsic charge transport in monolayer WS2 devices.

关键词： tungsten disulfide(WS2),transition metal dichalcogenides(TMDs),mobility,interface

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100nm MHEMT transistor technology for W-band amplifier 3

100nm MHEMT transistor technology for W-band amplifier

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3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Yaohui, Kang Weibo, Wang Jianfeng, Gao Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute NanJing China

ISBN: (纸本)9781479943548

In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHEMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip size is 3.08×3.62mm2. The amplifier were measured with a W-band on-chip test, a linear gain of 20 dB at 98 GHz and more than 17dB over the bandwidth from 95 to 100 GHz was achieved for a drain voltage Vd of 1.5V and Vg of 0.9V. © 2014 IEEE.

关键词： Foot Force Indium phosphide Logic gates MODFETs mHEMTs MHEMT T-gate W-band amplifier two step forming mHEMTs Amplifiers Modulation doped field effect transistor Indium phosphide Logic gates Foot Foot Foot British Force Structural stability

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Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

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3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

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