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检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"

共 241 条记录，以下是131-140 订阅

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Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

引用

2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

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Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs device with Silicon substrate. It is based on low temperature bonding of the epitaxial layer transfer technology with bisbenzocyclobutene (BCB). Using this method, we demonstrate that GaAs pseudomorphic high electron mobility transistor (pHEMT) device on a 3 inch-diameter GaAs wafer is transferred to a Silicon substrate, and evaluate the different thickness of BCB that affect the performance of GaAs pHEMT device.

关键词： Conferences Electron devices Solid state circuits

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The research of heterogeneous integration based on epitaxial layer transfer technology

The research of heterogeneous integration based on epitaxial...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： LiShu Wu Yan Zhao Wei Cheng Zi Qian Huang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs devices with Si. It is based on low temperature bonding of the epitaxial layer transfer technology. Using this method, we demonstrate that GaAs PIN epitaxial layer on a 3 inch-diameter GaAs wafer is transferred to a silicon substrate. After the GaAs PIN epitaxial layer is transferred, the GaAs PIN devices on silicon are fabricated, besides the IV characteristic of GaAs PIN devices is unaffected by epitaxial layer transfer.

关键词： Epitaxial growth Gallium arsenide Substrates Lithography Performance evaluation Investment

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AlGaN/GaN HEMTs on Si(100) substrate

AlGaN/GaN HEMTs on Si(100) substrate

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Yan Zhao Cen Kong Lishu Wu Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices. In this paper, we describe our effort on demonstrating the heterogeneous integration of GaN transistor and Si substrate. AlGaN/GaN HEMTs have been fabricated on Si (100) substrate through epitaxial transfer process.

关键词： Gallium nitride HEMTs MODFETs Epitaxial growth Adhesives Silicon Performance evaluation

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz

24.8 A W-Band Power Amplifier with Distributed Common-Source...

引用

IEEE International Conference on Solid-State circuits (ISSCC)

作者： Weibo Wang Fangjin Guo Tangsheng Chen Keping Wang Tianjin University Tianjin China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (数字)9781728132051

ISBN: (纸本)9781728132068

W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and improving power density (W/mm 2 ) [1].

关键词： Power generation HEMTs Frequency measurement Gallium nitride Scattering parameters Semiconductor device measurement Impedance

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

引用

IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

引用

International Symposium on Antennas and Propagation (ISAP)

作者： Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm 2 .

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Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

引用

2008 9th International Conference on Solid-State and integrated-Circuit technology

作者： Pan Xiaofeng Shen Ya National Key Laboratory of Monolithic Integrated Circuits & Modules Nanjing Electronic Device InstituteP.R.China

This paper describes design consideration and performance of a Ku-band monolithic phase shifter utilizing 0.25-um PHEMT *** developed 6-bit phase shifter demonstrates an overall phase deviation less than 1.5 rnis and an insertion loss variation less than 0.35 dB rms from 12 to 15 *** all 64 states,the insertion loss is measured to be 9 dB and the VSWR is less than 1.4. The chip size of the monolithic phase shifter is 3.1 mm X 1mm.

关键词： PHEMT Design and Performance of a Ku-Band 6-Bit MMIC Phase-Shifter

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Through-silicon via technologies for interconnects in RF MEMS

Through-silicon via technologies for interconnects in RF MEM...

引用

Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China

Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 mm times mm. Using it as interconnections for 3-dimentional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. After measurement it exhibits an insertion loss of less than 3.5 dB from 26.5 GHz to 34 GHz and an amplitude variation of less than 2 dB. The total size of the chip is 6.3 mm times 3.2 mm.

关键词： Radiofrequency microelectromechanical systems Through-silicon vias integrated circuit interconnections Plasma measurements integrated circuit technology Millimeter wave technology Loss measurement Semiconductor device measurement integrated circuit measurements Insertion loss

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