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Journal of Semiconductors 2013年第3期34卷 48-50页

作者：周建军柏松孔岑耿习娇陆海燕孔月婵陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 *** DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 *** the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.

关键词： diamond MISFET Al_2O_3

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A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V

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Journal of Semiconductors 2013年第5期34卷 76-78页

作者：程伟王元赵岩陆海燕高汉超杨乃彬 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.

关键词： InP DHBT THz high breakdown

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A High Power 320–356GHz Frequency Multipliers with Schottky Diodes

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Chinese Journal of Electronics 2016年第5期25卷 986-990页

作者： YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI

A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying efficiency. The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals, and better thermal transportation. The whole multiplying circuit is optimized and established in Computer simulation technology(CST) suite. The highest measured multiplying efficiency is 8.0% and its output power is 5.4mW at 328 GHz. The measured typical output power is 4.0mW in 320–356GHz.

关键词： Schottky diode Frequency doubler Efficiency Thermal dissipation

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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

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Chinese Physics B 2016年第5期25卷 448-452页

作者：李欧鹏张勇徐锐敏程伟王元牛斌陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

关键词： terahertz amplifier InP double heterojunction bipolar transistor inverted microstrip line monolithic integrated circuit

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Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

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Chinese Physics Letters 2011年第12期28卷 128-131页

作者： YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016

A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is *** are presented for the field components,dispersion,power ratio,transmission loss and characteristic impedance as functions of the operating frequencies,dimensions and material *** the case of the lowest-order mode TE10,design curves covering frequencies and dimensions for the given material constants in the THz region are *** theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good *** investigation results show that by selecting proper dimensions and dielectric materials,G-PPDW can be used to guide THz waves efficiently with high power confinement and low *** outstanding properties may open up a way to many important applications for THz integrated circuits and systems.

关键词： waveguide Waveguide dimensions

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8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

8-Watt Internally Matched GaAs Power Amplifier At 16-16.5GHz

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2006 8th International Conference on Solid-State and integrated Circuit technology

作者： Zhong Shichang Chen Tangsheng Lin Gang Li Fuxiao National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424401615

＜正＞This paper describes a new 19.2mm GaAs PHEMT chip with high gain,high power and high power-added *** which are packaged by internal-matching use one such FET that has been Jeveloped at *** 16.5GHz,the device has achieved power,gain,and power-added efficiency of 39.1dBm,6.1dB and 26.1%respectively at the ldB gain compression *** is first reported that high gain,PAE and output power combination have achieved by a single FET power amplifier at such high frequency.

关键词： Power amplifiers

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Silicone oil-based solar-thermal fluids dispersed with PDMS-modified Fe3O4@graphene hybrid nanoparticles

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Progress in Natural science:Materials International 2018年第5期28卷 554-562页

作者： Peng Tao Lei Shu Jingyi Zhang Chiahsun Lee Qinxian Ye Huaixin Guo Tao Deng State Key Laboratory of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

One of the most challenging problems that limit the practical application of carbon-based photothermal nanofluids is their poor dispersion stability and tendency to form aggregation. Herein, by using Fe3O4@graphene hybrid nanoparticles as a model system, we proposed a new method to prepare stably dispersed silicone oilbased solar-thermal nanofluids that can operate at high temperatures than water-based fluids. The introduction of Fe3O4nanoparticles between graphene nanosheets not only physically increases the inter-plane distance of the graphene nanosheet but also provides numerous anchoring points for surface modification. Phosphate-terminated polydimethylsiloxane chains, which have high compatibility with the silicone oil base fluids and hightemperature stability, were synthesized and utilized to modify the Fe3O4nanoparticle surfaces. The attached chains create steric hindrance and effectively screen the strong inter-plane van der Waals attraction between graphene sheets. Dispersion stability of the nanofluids with different concentrations of surface-modified hybrid nanoparticles and heated under different temperatures was investigated. We have demonstrated that such fluids could maintain stable dispersion under a heating temperature up to 150 °C depending on the concentration of the hybrid nanoparticles. The resultant nanofluids maintained stable dispersion after repeated heating and were employed for consistent direct solar-thermal energy harvesting at 100 °C.

关键词： Silicone oil Graphene Nanofluid Dispersion Solar-thermal energy

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V

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Journal of Semiconductors 2012年第1期33卷 56-58页

作者： Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

关键词： InP double heterojunction bipolar transistor planarization

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A 220 GHz dynamic frequency divider in 0.5μm InP DHBT technology

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Journal of Semiconductors 2017年第5期38卷 82-87页

作者： Wei Cheng Youtao Zhang Yuan Wang Bin Niu Haiyan Lu Long Chang Junling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been *** epitaxial layer structure and geometry parameters of the device were carefully studied to get the required *** 0.5 × 5 μm^2 InP DHBTs demonstrated ft = 350 GHz,f（max） = 532 GHz and BV（CEO） = 4.8 V,which were modeled using Agilent-IIBT large signal *** a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this *** ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz＋ mixed signal integrated circuits.

关键词： InP heterojunction bipolar transistor dynamic frequency divider

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Efficient Schemes and Architectures for Check Node Update in Shuffled Min-Sum Decoding of LDPC Codes

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IEEE Transactions on circuits and Systems I: Regular Papers 2025年

作者： Luo, Lisha He, Xuan Du, Qin Han, Kaining Di, Zhixiong Tang, Xiaohu Southwest Jiaotong University Information Coding and Transmission Key Laboratory of Sichuan Province Chengdu 610031 China University of Electronic Science and Technology of China (UESTC) National Key Laboratory of Science and Technology on Communications Chengdu 610054 China Southwest Jiaotong University School of Integrated Circuits Science and Engineering Chengdu 610031 China

By dividing Variable Nodes (VNs) into groups and processing groups sequentially, the Shuffled Min-Sum (SMS) decoding of Low-Density Parity-Check (LDPC) codes achieves a good trade-off between hardware resource and throughput. However, under the grouping strategy where at least one Check Node (CN) has multiple VN neighbors in one group, the CN update of State-Of-The-Art (SOTA) SMS decoding has long latency and high complexity. To address the issue, this paper presents two efficient CN update schemes. The first one uses the first two minimum Variable-to-Check (V2C) message magnitudes in each group and a size-λ Monotone Double-ended Queue (λMDQ), leading to an Improved λMDQ (I-λMDQ) scheme. The second one called the Modified λMDQ (M-λMDQ) scheme uses only the minimum in each group. As a result, our schemes reduce the number of Selection modules (SMs) required by the CN update to only one. Simulation results show that both of our schemes have comparable error-correction performance to the SOTA schemes. Furthermore, we simplify the SM via a decomposition design and also present the detailed hardware architectures for our schemes. Analysis using the 90nm CMOS technology library shows that, compared to the SOTA schemes, our I-λMDQ scheme reduces the area and latency by up to 75% and 72%, respectively, while improving the throughput by up to 254%. Similarly, our M-λMDQ scheme reduces the area and latency by up to 79% and 70%, respectively, and improves the throughput by up to 229%. © 2004-2012 IEEE.

关键词： Check node update hardware implementation LDPC code monotone double-ended queue shuffled min-sum decoding

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