检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

163 篇 会议
78 篇 期刊文献

馆藏范围

241 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

170 篇 工学
- 150 篇 电子科学与技术（可...
- 95 篇 材料科学与工程（可...
- 55 篇 化学工程与技术
- 40 篇 电气工程
- 20 篇 信息与通信工程
- 14 篇 计算机科学与技术...
- 12 篇 光学工程
- 10 篇 仪器科学与技术
- 9 篇 冶金工程
- 8 篇 动力工程及工程热...
- 7 篇 软件工程
- 3 篇 机械工程
- 3 篇 网络空间安全
- 2 篇 控制科学与工程
- 2 篇 轻工技术与工程
- 1 篇 生物医学工程（可授...
- 1 篇 生物工程
79 篇 理学
- 56 篇 化学
- 47 篇 物理学
- 7 篇 数学
- 5 篇 地质学
- 1 篇 生物学
- 1 篇 统计学（可授理学、...
3 篇 管理学
- 3 篇 管理科学与工程(可...

主题

26 篇 gallium nitride
14 篇 hemts
13 篇 power amplifiers
13 篇 silicon carbide
12 篇 indium phosphide
10 篇 modfets
9 篇 silicon
8 篇 logic gates
8 篇 gallium arsenide
7 篇 inp
7 篇 performance eval...
7 篇 schottky diodes
7 篇 heterojunction b...
6 篇 substrates
6 篇 mmics
6 篇 power generation
6 篇 integrated circu...
6 篇 radio frequency
5 篇 fabrication
5 篇 phemts

机构

78 篇 science and tech...
45 篇 science and tech...
33 篇 nanjing electron...
14 篇 national key lab...
11 篇 nanjing guobo el...
9 篇 state key labora...
9 篇 college of integ...
8 篇 national key lab...
6 篇 science and tech...
6 篇 science and tech...
5 篇 fundamental scie...
5 篇 nanjing electron...
5 篇 department of mi...
4 篇 fundamental scie...
4 篇 national and loc...
4 篇 school of microe...
4 篇 science and tech...
4 篇 national key lab...
4 篇 school of optoel...
4 篇 national key lab...

作者

33 篇 tangsheng chen
23 篇 wei cheng
20 篇 chen chen
19 篇 yuechan kong
17 篇 haiyan lu
15 篇 chen tangsheng
15 篇 jianjun zhou
11 篇 chen gang
11 篇 bai song
11 篇 bin niu
10 篇 zhou jianjun
8 篇 zhonghui li
8 篇 li liang
8 篇 li yun
8 篇 kai zhang
8 篇 cheng wei
8 篇 ruimin xu
8 篇 yi zhang
8 篇 yuan wang
8 篇 weibo wang

语言

223 篇 英文
14 篇 中文
4 篇 其他

检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"

共 241 条记录，以下是211-220 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

引用

2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

来源：评论

学校读者我要写书评

暂无评论

InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

来源：评论

学校读者我要写书评

暂无评论

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

引用

2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transcooductance 200 mS/mm was obtained with lum gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.

关键词： Gallium nitride HEMTs Dielectrics and electrical insulation Dielectric materials Metal-insulator structures High-K gate dielectrics Binary search trees Chemical vapor deposition MOCVD Inorganic materials

来源：评论

学校读者我要写书评

暂无评论

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...

引用

2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into selfconsistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 uC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment.

关键词： Polarization Aluminum gallium nitride Gallium nitride Ferroelectric materials Capacitance-voltage characteristics Voltage integrated circuit technology Buffer layers Electric variables measurement Performance evaluation

来源：评论

学校读者我要写书评

暂无评论

Through-silicon via technologies for interconnects in RF MEMS

Through-silicon via technologies for interconnects in RF MEM...

引用

Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Jian Zhu Yuanwei Yu Fang Hou Chen Chen Nanjing Electronic Devices Institute Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China

Various holes in through-silicon via (TSV) technologies are analyzed and realized by inductively coupled plasma (ICP) process. Using TSV technologies as grounding connections, a Ku band miniature bandpass filter is designed and fabricated. Measured results show an insertion loss of 1.9 dB and a bandwidth of 20%. The chip size is 9.6 mm times mm. Using it as interconnections for 3-dimentional millimeter-wave integrated circuits, a silicon micromachined vertical transition with three layers is presented. TSV, alignment, bonding and wafer thinning technologies are used to fabricate the sample. After measurement it exhibits an insertion loss of less than 3.5 dB from 26.5 GHz to 34 GHz and an amplitude variation of less than 2 dB. The total size of the chip is 6.3 mm times 3.2 mm.

关键词： Radiofrequency microelectromechanical systems Through-silicon vias integrated circuit interconnections Plasma measurements integrated circuit technology Millimeter wave technology Loss measurement Semiconductor device measurement integrated circuit measurements Insertion loss

来源：评论

学校读者我要写书评

暂无评论

A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

引用

2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

作者： Wang, Weibo Wang, Zhigong Zhang, Bin Kang, Yaohui Wu, Liqun Yang, Naibin Institute of RF-and OE-ICs Southeast University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China

ISBN: (纸本)9781424440740

A W-Band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15um GaAs MHEMT technology ,the mmic typically oscillates at the 108GHz and ranges from 106.8GHz to 108.4GHz,, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5dBm respectively. ©2009 IEEE.

关键词： monolithic microwave integrated circuits

来源：评论

学校读者我要写书评

暂无评论

A 108 GHz GaAs MHEMT VCO MMIC

A 108 GHz GaAs MHEMT VCO MMIC

引用

International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE)

作者： Weibo Wang Zhigong Wang Bin Zhang Yaohui Kang Liqun Wu Naibin Yang Institute of RF-&OE-ICs Southeast University Nanjing China Institute of RF &OE ICs South-East University Nanjing China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing China Nanjing Electronic Decices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China

A W-band VCO MMIC is first time reported in this paper in China, To eliminate the parasitic resistance of the oscillator loop, this chip utilizes the source capacitive feedback forming the negative resistance. Through the reasonable output matching network, the chip also realize the frequency start-up condition and restrain the output harmonic. Finally, Fabricated by the NEDI's 0.15 um GaAs MHEMT technology, the mmic typically oscillates at the 108 GHz and ranges from 106.8 GHz to 108.4 GHz, voltage-controlled-bandwidth and typical output power achieves 1.6 GHz and -8.5 dBm respectively.

关键词： Gallium arsenide mHEMTs Voltage-controlled oscillators MMICs Negative feedback Feedback loop Impedance matching Frequency Voltage Power generation

来源：评论

学校读者我要写书评

暂无评论

A design of C-band improved radial power combiner

A design of C-band improved radial power combiner

引用

2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008

作者： Haifeng, Cheng Bin, Zhang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781424421855

This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved radial power combiner worked at 5-6GHz which has the VSWRs of both input and output >1.7, the ports imbalance of the amplitude >±0.4, as well as the phase >±2 degrees, a high isolations, and also has a small size of 56mm diameter. The combiner is expected to reach an efficiency of near 90%. © 2008 IEEE.

关键词： Power amplifiers

来源：评论

学校读者我要写书评

暂无评论

Design and performance of a ku-band 6-Bit MMIC phase-shifter

Design and performance of a ku-band 6-Bit MMIC phase-shifter

引用

2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008

作者： Xiaofeng, Pan Ya, Shen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424421855

This paper describes design consideration and performance of a u band monolithic phase shifter utili ing .25 um HEMT switches. The de eloped bit phase shifter demonstrates an o erall phase de iation less than 1.5 rms and an insertion loss ariation less than .35 d rms from 12 to 15 H . For all 4 states, the insertion loss is measured to be d and the S R is less than 1.4. The chip si e of the monolithic phase shifter is 3.1 mm × 1mm. © 2008 IEEE.

关键词： Insertion losses

来源：评论

学校读者我要写书评

暂无评论

Approaches for improving LO-RF isolation of MMIC 90-hybrid-IRM

Approaches for improving LO-RF isolation of MMIC 90-hybrid-I...

引用

2008 International Conference on Microwave and Millimeter Wave technology, ICMMT

作者： Shen, Yiming Peng, Longxin National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424418794

Image Reject Mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced schottky diode mixer using 90 hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods. ©2008 IEEE.

关键词： monolithic microwave integrated circuits

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共25页 << < 16 17 18 19 20 21 22 23 24 25 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：