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检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"
241 条 记 录,以下是31-40 订阅
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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators
The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...
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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010
作者: Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric con... 详细信息
来源: 评论
Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 214-216页
作者: Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diff... 详细信息
来源: 评论
Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
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Chinese Physics Letters 2015年 第7期32卷 175-178页
作者: 牛斌 王元 程伟 谢自力 陆海燕 常龙 谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ... 详细信息
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A high linearity X-band SOI CMOS digitally-controlled phase shifter
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Journal of Semiconductors 2015年 第6期36卷 115-122页
作者: 陈亮 陈新宇 张有涛 李智群 杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size ... 详细信息
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A design of C-band improved radial power combiner
A design of C-band improved radial power combiner
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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008
作者: Haifeng, Cheng Bin, Zhang National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China
This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved rad... 详细信息
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Design and performance of a ku-band 6-Bit MMIC phase-shifter
Design and performance of a ku-band 6-Bit MMIC phase-shifter
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2008 9th International Conference on Solid-State and integrated-Circuit technology, ICSICT 2008
作者: Xiaofeng, Pan Ya, Shen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China
This paper describes design consideration and performance of a u band monolithic phase shifter utili ing .25 um HEMT switches. The de eloped bit phase shifter demonstrates an o erall phase de iation less than 1.5 rms ... 详细信息
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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
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Journal of Semiconductors 2016年 第6期37卷 112-115页
作者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... 详细信息
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An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate
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Journal of Semiconductors 2018年 第5期39卷 54-58页
作者: Kun Ren Jiachen Zheng Haiyan Lu Jun Liu Lishu Wu Wenyong Zhou Wei Cheng Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi UniversityHangzhou 310018China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016China
This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain ... 详细信息
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A compact transition structure integrated with DC feed filter for submillimeter wave application
A compact transition structure integrated with DC feed filte...
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2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007
作者: Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal ... 详细信息
来源: 评论
Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)
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science China(Technological sciences) 2012年 第11期55卷 3200-3203页
作者: GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is ob... 详细信息
来源: 评论