High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric con...
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We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diff...
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A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ...
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A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain (MSG/MAG) and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.
This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size ...
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This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss (IL) is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point (IP1dB) is 20 dBm.
This paper shows a design of improved radial power combiner used for combining a large number of MMIC power amplifiers. We analyzed the characteristics of the MMIC power amplifiers, and developed a 16 way improved rad...
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This paper describes design consideration and performance of a u band monolithic phase shifter utili ing .25 um HEMT switches. The de eloped bit phase shifter demonstrates an o erall phase de iation less than 1.5 rms ...
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We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3...
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We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3/Al_2O_3 stack(x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain ...
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This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors(DHBTs)transferred to RF CMOS wafer *** measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,*** order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably *** extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal ...
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ISBN:
(纸本)1424410444
A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal orientation relative to the waveguide, and a sector suspended microstrip low pass filter is integrated for DC feed circuits, Broad bandwidth with low insert loss (
Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is ob...
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Photoluminescence properties of highly p+-doped GaASl_ySby are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg(GaAsl_ySby)=l.25y2-1.95y+1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level (El) and full width at half maximum (FWHM) of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.
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