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European Conference on Antennas and Propagation, EuCAP

作者： Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK

This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLSA with circular polarizations, and near-field focused radiation characteristics is realized by adjusting the arrangements of radiating slot pairs and hence the amplitude and phase distribution of RLSA aperture. The designed NFF-RLSA antenna is 14.4λ0 in diameter and 0.17λ0 in height, where λ0 donates the wavelength in free space at the operating frequency, namely 10GHz. Simulation results show that the focus spot is 22.5λ0 away from the antenna aperture, while a focusing gain of 31.2dBi is achieved, and the size of focus spot is 2.48λ0 in width and 11.3λ0 in depth of focus, respectively.

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

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Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

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Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure

IEEE Electron Device Letters

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IEEE Electron Device Letters 2022年 1-1页

作者： Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China

A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE

关键词： Threshold voltage

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers Microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer

Simplified Evaluation on Cooling Performance of Silicon Micr...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.

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System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.

关键词： Sigma-delta modulation Microwave integrated circuits Frequency modulation Simulation Bandwidth Millimeter wave integrated circuits integrated circuit modeling

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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration

SSRN

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SSRN 2022年

作者： Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3 mm × 3.5 mm × 0.08 mm GaN power amplifier (PA) with heating power of ~ 100 W integrated on SI is applied to evaluate the cooling performance of both microfluidic cooling configurations. The maximum hotspot power density of the GaN chip achieves 336.0 ~ 340.5 W/mm 2 , and the average chip power density is 539.0 ~ 546.3 W/cm 2 in the experiments. The SI is integrated with the GaN chip and micro-assembled in a test cube. The surface temperature distributions of the GaN chip are measured with different flow rate at 70 ℃ ambient temperature, and the overall thermal resistance with microjet cooling has 7.11 ~ 7.72 % reduction and its heat transfer coefficient (HTC) increases 12.3 ~ 28.3 % comparing to that with microchannel cooling at the pumping power of 0.5 ~ 1.5 W. The material properties of GaN chip and SI are extracted from the measurement results and support the analysis of the thermal and hydraulic properties of both microfluidic SIs numerically. Their cooling performance and efficiency are evaluated and compared based on the performance evaluation criteria (PEC), field synergy number and entropy generation rate. According to the evaluation results, while the PEC of microjet and microchannel SIs increases with the pumping power, the microjet SI can contribute to the enhancement of the synergetic relation between the flow and temperature fields and reduction of total irreversibility in heat transfer process comparing to the microchannel SI in pursuit of low overall thermal resistance. The field synergy number can improve 90.40 % and the argument entropy generation rate can be 0.376 when the overall thermal resistance is 1.35 K/W. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

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Multiple transient photocurrents coupled simulation based on AD8561 MACRO-SPICE Model 4

Multiple transient photocurrents coupled simulation based on...

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4th International Conference on Radiation Effects of Electronic Devices, ICREED 2021

作者： Li, Yang Wei, Jianan He, Chaohui Yang, Weitao Li, Yonghong Guo, Yaxin School of Nuclear Science and Technology Xi’an Jiaotong University Xi’an China National Key Laboratory of Analog Integrated Circuits Chongqing China

ISBN: (纸本)9781665441681

AD8561 (Analog Device Inc.) MACRO-SPICE model is used to investigate the coupled effects of multiple photocurrents generated by gamma pulse radiation in its Input and Output modules. Firstly, the test circuit is built to find sensitive devices according to previous studies. Besides, Gummel-Poon bipolar junction transistor (BJT) model including photocurrent generators implemented by the exponential current sources is adopted to replace the initial device model. Finally, the effects caused by each photocurrent and multiple photocurrents under different input states are simulated and analyzed. The simulation results indicate that there are competitive relationships among the multiple photocurrents generated in the input-stage bipolar transistors, even in a single bipolar transistor, and the relationship changes with the input state. The transient upset induced by photocurrents generated in the Input and Output modules have superimposed effects on the output ports, but the transient upset duration depends mainly on the Input module. © 2021 IEEE

关键词： Radiation effects

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