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Bright photon-pair source based on a silicon dual-Mach-Zehnder microring

science China(Physics,Mechanics & Astronomy) 2020年第2期63卷 3-6页

作者： Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source of entangled photons,offering a strong cavity-enhanced nonlinear interactions while maintaining features,such as compact,simple to fabricate,and allowing for thermal ***,silicon ring-resonators usually suffer from a trade-off between providing a high pair generation rate(PGR)and high extraction *** achieve high PGR,devices are generally operated with the signal and idler photons in the undercoupling regime and pump photons at the critical coupling point,while high extraction rates require the converted photons to be ***,the optimal conditions for achieving maximal output photon pair flux are critical coupling for the pump photons and overcoupling for the converted photons[2,3].

关键词： coupling photon converted

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Compact L-band High Performance Self-bias GaN Power Amplifier 7

Compact L-band High Performance Self-bias GaN Power Amplifie...

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7th International Conference on Information science and Control Engineering, ICISCE 2020

作者： Wang, Shuai Zhong, Shichang Zhao, Liang Li, Fei Nanjing Electronic Devices Institute P.O.Box 1601 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

ISBN: (纸本)9781728164069

This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, under the condition of 32V single power supply bias, 300 mus pulse width and 15% duty cycle, the output power of the amplifier is more than 20W, the gain is more than 15dB and the power additional efficiency(PAE) is more than 58% in the frequency band of 1.2 sim 1.4 GHz. The whole circuit is soldered in a 17.4mm times 24 mm metal and ceramic package, which fully demonstrates the excellent performance of the self-bias L-band GaN power amplifier. © 2020 IEEE.

关键词： Gallium nitride

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0} 13

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020

作者： Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China

ISBN: (纸本)9781728190648

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs terahertz SBD was presented with its C{\mathrm{j}0} scaled into sub-fF range. Scalling C-V measurement showed C{\mathrm{j}0} without parasitic capacity reached 0.476fF for the 0.5\mu\mathrm{m} anode diameter device. With the relative low series resistance Rs of 28.8\mathrm{\Omega}, cutoff frequency f{\mathrm{t}} reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz. © 2020 IEEE.

关键词： Schottky barrier diodes

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A 14-22GHz monolithic Double-Balanced Passive Mixer

A 14-22GHz Monolithic Double-Balanced Passive Mixer

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .

关键词： Resistors Radio frequency MOSFET Spirals Baluns Simulation PHEMTs

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Functional GaN Heterogeneous integrated Substrate Based on Wafer Bonding and Smart-cut technology

Functional GaN Heterogeneous Integrated Substrate Based on W...

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IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

作者： Jiaxin Ding Tiangui You Xin Ou National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331519919

ISBN: (纸本)9798331519926

This work focuses on the significant demand for breakthroughs and improvements in chip performance through the monolithic heterogeneous integration of GaN-based materials and devices with foreign substrates in the post-Moore era. It systematically conducts the fabrication of wafer-scale single-crystal GaN film and its heterogeneous integration by ion-cutting technology.

关键词： Wafer bonding Performance evaluation Fabrication Conferences Multichip modules Bonding Substrates Three-dimensional integrated circuits

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： Microwave integrated circuits Power demand Pipelines Layout Voltage Microwave circuits Calibration

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

Vertical Field-Plated NiO/Ga2O3 Heterojunction Power Diodes

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息

In this work, vertical NiO/Ga₂O₃ heterojunction diodes (HJDs) have been demonstrated with the integrated SiN_x/Al₂O₃ double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (R_on,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga₂O₃ material to solve the difficulty of p-type Ga₂O₃.

关键词： Performance evaluation Fabrication Electric potential Annealing Heterojunctions Plasmas Leakage currents

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process 17

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

作者： Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China

ISBN: (纸本)9780738111889

The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS process. Moreover, the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time, and the wafer yield of GaN high electron mobility transistor (HEMT) with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4 %. Besides, the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA), the resist width and gate length are about 0.15 μm and 0.2 μm. It is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2 %. Comparing with the results of deep ultra-violet (DUV) lithography, the electrical and radio frequency (RF) characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable. © 2020 IEEE.

关键词： Gallium nitride

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6-Inch GaN/Si CMOS 1P2M monolithic Heterogeneous Process and Platformed Devices

6-Inch GaN/Si CMOS 1P2M Monolithic Heterogeneous Process and...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wen-Zhang Du Han-Zhao He Wen-Qi Fan Zhuang Wang Xiao-Dong Yang Jiao Liang Qing-Chun Zhang Hong-Ping Ma Wang Ma Li Yuan Jia-Wan Zhou Tao Wang Shu-Jun Cai Cheng Qian Guang-Sheng Zhang Xiao-Jun Fu Hong Zhou Hai-Ou Li Hong-Qiang Yang Jun-Ji Cheng Liang Li Wei Huang D.W. Zhang School of Microelectronics Fudan University Shanghai China School of Academy for Engineering & Technology Fudan University Shanghai China Genettice Co. LTD Qingdao China National Key Laboratory of Integrated Circuits and Microsystems Wuxi China National Key Laboratory of Integrated Circuits and Microsystems Chongqing China School of Microelectronics Xidian University Xi'an China Guilin University of Electronic Technology Guilin China University of Electronic Science and Technology of China Chengdu China School of Electronic Information Engineering Suzhou Vocational University Suzhou China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

To solve problems of parasitic effects in interconnects, low reliability, and three-dimensional stress associated with 3D heterogeneous and stacking of small chips, the complete process and model research of a 6-inch 20V GaN/Si CMOS 1P2M/(111) Si monolithic heterogeneous integration in the paper is put forward at the first time. Innovations have been made in high-quality patterned selective epitaxy of GaN, compatibility of GaN/Si-based P-well CMOS processes, and platformed device design. This work has overcome several engineering challenges associated with the process integration of 6-inch Si CMOS IC and GaN IC chips, leading to the development of key devices such as (1) Si PMOS with a threshold voltage/current drive (V TH /I DS (forward)) of -0.7V, 2.5 mA/mm; (2) high-performance bulk silicon PN diodes with a forward voltage (V F ) of about 0.72~0.79 V; (3) PNP and NPN silicon bipolar devices with β of approximately 260 and 300, respectively; (4) AlGaN/GaN HEMTs with V TH /I DS (forward) of -3V, 300–500 mA/mm. A prototype platform for heterogeneous integration processes, including Si CMOS and GaN processes, has been established.

关键词： Technological innovation Three-dimensional displays Multichip modules HEMTs Silicon Threshold voltage Semiconductor diodes Wide band gap semiconductors MODFETs Stress

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