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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

science China(Technological sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting III-V materials

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100nm MHEMT transistor technology for W-band amplifier 3

100nm MHEMT transistor technology for W-band amplifier

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3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Yaohui, Kang Weibo, Wang Jianfeng, Gao Chen, Chen National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute NanJing China

ISBN: (纸本)9781479943548

In this paper we analyze the 100 nm T-gate structure mechanics, develop the 100 nm MHEMT process with higher structure stability and present a four-stage W-band amplifier with 2×20μm gate width, the total chip size is 3.08×3.62mm2. The amplifier were measured with a W-band on-chip test, a linear gain of 20 dB at 98 GHz and more than 17dB over the bandwidth from 95 to 100 GHz was achieved for a drain voltage Vd of 1.5V and Vg of 0.9V. © 2014 IEEE.

关键词： Foot Force Indium phosphide Logic gates MODFETs mHEMTs MHEMT T-gate W-band amplifier two step forming mHEMTs Amplifiers Modulation doped field effect transistor Indium phosphide Logic gates Foot Foot Foot British Force Structural stability

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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

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Chinese Physics B 2018年第4期27卷 432-436页

作者： Ting-Ting Liu Kai Zhang Guang-Run Zhu Jian-Jun Zhou Yue-Chan Kong Xin-Xin Yu Tang-Sheng Chen Research Institution China Electronic Equipment ＆ System Engineering Company Beijing 100039 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

We investigate the influence of fin architecture on linearity characteristics of AlGaN/*** is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar *** to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm ***,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar *** study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.

关键词： AlGaN/GaNFinFETs output power density linearity characteristics

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5A 1300V trenched and implanted 4H-SiC vertical JFET

5A 1300V trenched and implanted 4H-SiC vertical JFET

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4th International Conference on Mechanical and Electrical technology, ICMET 2012

作者： Chen, Gang Song, Xiaofeng Bai, Song Li, Li Li, Yun Chen, Zheng Wang, Wen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037855102

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device's current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ·cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device's ohmic contact. © (2012) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN 4th

On-chip integrated inductors with NiFe-SiOx magnetic thin fi...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781138028302

Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventional GaN-based MMIC process. On-wafer measured results showed that an additional resonant absorption happened in the inductors with magnetic films at lower frequencies. An improved equivalent circuit model that takes into account magnetic absorption was developed for characterizing the phenomenon and good fitting results were acquired up to 11.6 GHz. © 2015 Taylor & Francis Group, London.

关键词： III-V semiconductors

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A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280GHz

A submicron InGaAs/InP double heterojunction bipolar transis...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhao, Yan Cheng, Wei Wang, Yuan Gao, Han Chao Lu, Hai Yan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781629933405

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Indium phosphide

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors 15

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Yingdong, Zhao Kai, Zhang Fei, Yang Southeast University School of Electronic Science & Engineering China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China

ISBN: (纸本)9798350338874

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz. © 2023 IEEE.

关键词： Varactors

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Developing the Ka-band GaN power HEMT devices

Developing the Ka-band GaN power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

作者： Zhou, J.J. Dong, X. Kong, C. Kong, Y.C. Ren, C.J. Li, Z.H. Chen, T.S. Chen, C. Zhang, B. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467313032

High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz. © 2012 IEEE.

关键词： III-V semiconductors

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The research on mm-wave power amplifier MMIC

The research on mm-wave power amplifier MMIC

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhang, Bin Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467309028

In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed and fabricated The MMIC has an 8.96mm gate periphery on the output stage. Performance achieved was 24dB gain from 33-37GHz with a peak power of >4. 5W and PAE of 23%. © 2012 IEEE.

关键词： Power amplifiers

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Low surface roughness gaas/si thin-film deposition using three-step growth method in mbe

Low surface roughness gaas/si thin-film deposition using thr...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2019

作者： Wei, Wang Ben, Ma Hanchao, Gao Hailong, Yu Zhonghui, Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035736427

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Molecular beam epitaxy

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