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检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"

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100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of Gm and fT/fmax 10

100 nm Gate-Length AlGaN/GaN FinFETs with High Linearity of ...

引用

10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Zhang, K. Zhu, G.R. Kong, Y.C. Chen, T.S. Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538624166

We report excellent dc and RF performance of high-linearity AIGaN/GaN FinFETs with 100 nm T-gate. Besides a high fT of 65 GHz enabled by scaled gate length, good linearity characteristics of Gm and fT/fmax are demonstrated. Loadpull measurements show that the proposed FinFETs achieve a maximum Pout of 2.98 W/mm with an associated PAE of 64% at 4 GHz and Vd=10V, At 18 GHz, Pout and PAE turn out to 2.73 W/mm and 48%, respectively. To the best of our knowledge, this is the first demonstration of high-linearity GaN FinFETs which operate at Ku-band. © 2018 IEEE.

关键词： Gallium nitride

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4.5kV SiC JBS diodes

4.5kV SiC JBS diodes

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Yan, Liwei Peng, Shuang Zhang, Kai Wang, Ziqiang Liu, Chenxi Yang, Fei Wves Southeast University State Key Laboratory of Millimeter Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (纸本)9798350341140

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm2. © 2023 IEEE.

关键词： attenuator E/D p-HEMT GaAs MMIC ultra-wideband circuit

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DC magnetic field modulated doubly balanced monolithic mixer using magnetic thin film baluns

DC magnetic field modulated doubly balanced monolithic mixer...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Li, Hui Kong, Cen Chen, Xiaojian Wang, Weibo Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

A novel DC Magnetic Field modulated doubly balanced monolithic mixer consisting of NiFe-SiOx magnetic thin film spiral transformer-baluns is presented first time. The -3dB bandwidth of the mixer from original L/S-band (1.3-3GHz) was modulated to L/C-band (1.4-5.5GHz) while a DC magnetic field was applied. Besides, the conversion loss of the mixer was improved by 1dB decreasion at the same time. The fabrication process of the mixer was fully compatible with standard monolithic microwave integrated circuit (MMIC) process. © 2012 IEEE.

关键词： Silicon compounds

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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate

High breakdown voltage GaN HEMT device fabricated on self-st...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHz&bullμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Aluminum gallium nitride

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Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene

Influence of the etching process on the surface morphology o...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 cm-1 and 22 cm-1, respectively. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

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3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method

Investigation of millimeter-wave GaN HEMTs and a quick small...

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhong, Zheng Guo, Yong-Xin Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore Singapore

ISBN: (纸本)9781467309028

Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.

关键词： Millimeter waves

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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer 4th

AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781138028302

The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vapor Deposition (PECVD). The SiN film worked as the passivation and gate-insulating layers. Al/Ni/Au ohmic was proposed for its good contact performance at a lower annealing temperature compared with Ti/Al/Ni/Au ohmic and the lowest specific contact resistance was 7.59 × 10-6 Ω∙cm2. The fabricated Metal Insulatingsemiconductor High Electron Mobility Transistors (MIS-HEMTs) with a gate length of 1 μm had a maximum drain current density of 624 mA/mm and a peak extrinsic transconductance of 110 mS/mm. © 2015 Taylor & Francis Group, London.

关键词： Plasma enhanced chemical vapor deposition

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Approaches for improving LO-RF isolation of MMIC 90-hybrid-IRM

Approaches for improving LO-RF isolation of MMIC 90-hybrid-I...

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2008 International Conference on Microwave and Millimeter Wave technology, ICMMT

作者： Shen, Yiming Peng, Longxin National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Device Institute China

ISBN: (纸本)9781424418794

Image Reject Mixer (IRM) is one of common devices used in microwave receivers. A classical structure is IQ output single balanced schottky diode mixer using 90 hybrid. It's widely used in many engineering areas. The advantages of this structure are high-dynamic range capability, good VSWRs and suppression of noises. But the disadvantage caused by this structure is poor LO-RF isolation. This paper gives some methods to improve the LO-RF isolation of MMIC IQ output single balanced schottky diode mixer and analyses the influence on the other performances. It also gives a simulative and experimental result of MMIC Ka-band mixer design using these methods. ©2008 IEEE.

关键词： monolithic microwave integrated circuits

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