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Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

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Modeling Techniques for MHEMT Devices up to 110GHz 13

Modeling Techniques for MHEMT Devices up to 110GHz

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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021

作者： Lu, Haiyan Wu, Shaobin Chen, Jixin Chen, Tangsheng Science And Technology On Monolithic Integrated Circuits And Modules Laboratory Nanjing China Southeast University China Nanjing Electronic Devices Institute China

ISBN: (纸本)9781665434379

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. Excellent agreements between measured and simulated data are obtained in the frequency up to 110 GHz. © 2021 IEEE.

关键词： Equivalent circuits

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Study on transient thermal resistance of microwave pulse power device

Study on transient thermal resistance of microwave pulse pow...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Ding, Xiao Ming Chen, Gang Wang, Dian Li Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Junction temperature

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Influence of silicon cluster on epitaxial growth of silicon carbide

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science China(Physics,Mechanics & Astronomy) 2011年第9期54卷 1579-1582页

作者： LI ZheYang LI Yun CHEN Chen HAN Pin Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China National Key Laboratory of Monolithic Integrated Circuits and Modules the 55th Research Institute of CETC Nanjing 210016 China

Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.

关键词： 4H-SiC horizontal hot-wall CVD C/Si ratio growth rate doping concentration silicon cluster

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Design of single crystal silicon based RF MEMS switch with high contact force 3

Design of single crystal silicon based RF MEMS switch with h...

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3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Di, Mei Jing, Wu YuanWei, Yu PeiRan, Zhang Jian, Zhu NanJing Electronic Devices Institute NanJing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory NanJing210016 China

ISBN: (纸本)9781479943548

A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well. © 2014 IEEE.

关键词： Silicon wafers

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Direct extraction method of InP HBT small-signal model

Direct extraction method of InP HBT small-signal model

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Lu, Hai Yan Cheng, Wei Chen, Gang Chen, Tang Sheng Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Heterojunction bipolar transistors

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Two-terminal electroluminescence of AlGaN/GaN high electron mobility transistors

Two-terminal electroluminescence of AlGaN/GaN high electron ...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Kong, Yuechan Ren, Chunjiang Dong, Xun Zhou, Jianjun Xue, Fangshi Chen, Tangsheng Li, Liang IEEE Conference Publishing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

Electroluminescence (EL) characteristics from reverse-biased Schottky barrier diode are investigated on AlGaN/GaN high electron mobility transistors (HEMT) with different structures. Light emission from devices under high voltage or with high gate leakage current exhibit bluish or reddish color, suggesting different emission mechanism. No obvious EL is observed in AlGaN/GaN/AlGaN double heterostructure at high drain voltage near breakdown. 2D device simulation of the AlGaN/GaN HEMT at high drain voltage shows distinct separation of electrons and holes distribution, eliminating the possibility of direct band-to-band transitions. By comparing the EL image from front side and back side of the wafer, the manufacturing related problems as well as the location of material defects are detected. © 2012 IEEE.

关键词： Electroluminescence

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A micro transfer-printer for high-accuracy optoelectronic and photonic integration 16

A micro transfer-printer for high-accuracy optoelectronic an...

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16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022

作者： Wang, Yuxuan Li, Guanyu Kong, Yuchang Zheng, Youdou Shi, Yi Nanjing University School of Electronic Science and Engineering Nanjing210093 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210000 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose a micro transfer-printer (μ-TPer) designing for high-accuracy optoelectronic and photonic integration. The used μ-TPer equips a multi-axis movement stage and visual-recognizing system, which recognizes the alignment marks and operates the aligning actions precisely. To employ this μ-TPer, a basic photonic integrated circuit of InP PD onto silicon microring resonator are realized, where the misalignment less than 1 μm can be obtained optimally. This equipment enables a powerful manufacturing route for the various optoelectronic and photonic integrations. © 2022 IEEE.

关键词： Indium phosphide

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016

作者： Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China

ISBN: (纸本)9781509046133

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high fT • Lg product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at ID=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best fT performance for GaN-based HEMTs with a gate length of around 60 nm. © 2016 IEEE.

关键词： High electron mobility transistors

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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