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检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"
242 条 记 录,以下是81-90 订阅
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Bright photon-pair source based on a silicon dual-Mach-Zehnder microring
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science China(Physics,Mechanics & Astronomy) 2020年 第2期63卷 3-6页
作者: Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source... 详细信息
来源: 评论
Compact L-band High Performance Self-bias GaN Power Amplifier  7
Compact L-band High Performance Self-bias GaN Power Amplifie...
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7th International Conference on Information science and Control Engineering, ICISCE 2020
作者: Wang, Shuai Zhong, Shichang Zhao, Liang Li, Fei Nanjing Electronic Devices Institute P.O.Box 1601 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China
This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, ... 详细信息
来源: 评论
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0}  13
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...
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13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020
作者: Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs ter... 详细信息
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A monolithic AlGaN/GaN HEMT VCO using BST film varactor
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011
作者: Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China
A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication p... 详细信息
来源: 评论
Scaling technologies for millimeter-wave GaN-HEMTs
Scaling technologies for millimeter-wave GaN-HEMTs
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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012
作者: Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China
GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and t... 详细信息
来源: 评论
Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure
Simulation of polarization pinning effect in PZT/AlGaN/GaN m...
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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010
作者: Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China
The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymme... 详细信息
来源: 评论
Study of SiC's mechanical property variance caused by film thickness
Study of SiC's mechanical property variance caused by film t...
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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014
作者: Jiao, Zonglei Zhu, Jian NanJing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China
The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6... 详细信息
来源: 评论
Research on failure analysis and method of GaN-based HEMTs  14
Research on failure analysis and method of GaN-based HEMTs
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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017
作者: Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect ... 详细信息
来源: 评论
Research on TSV dry etching technology
Research on TSV dry etching technology
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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014
作者: Jiang, Guoqing Kuang, Lei Zhu, Jian Nanjing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China
TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP ( inductively coupled plasma ) dry etching to make TSV is discussed in this paper. Starti... 详细信息
来源: 评论
Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints
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Nano Research 2022年 第9期15卷 8470-8478页
作者: Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D f... 详细信息
来源: 评论