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7th International Conference on Information science and Control Engineering, ICISCE 2020

作者： Wang, Shuai Zhong, Shichang Zhao, Liang Li, Fei Nanjing Electronic Devices Institute P.O.Box 1601 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

ISBN: (纸本)9781728164069

This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, under the condition of 32V single power supply bias, 300 mus pulse width and 15% duty cycle, the output power of the amplifier is more than 20W, the gain is more than 15dB and the power additional efficiency(PAE) is more than 58% in the frequency band of 1.2 sim 1.4 GHz. The whole circuit is soldered in a 17.4mm times 24 mm metal and ceramic package, which fully demonstrates the excellent performance of the self-bias L-band GaN power amplifier. © 2020 IEEE.

关键词： Gallium nitride

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0} 13

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020

作者： Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China

ISBN: (纸本)9781728190648

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs terahertz SBD was presented with its C{\mathrm{j}0} scaled into sub-fF range. Scalling C-V measurement showed C{\mathrm{j}0} without parasitic capacity reached 0.476fF for the 0.5\mu\mathrm{m} anode diameter device. With the relative low series resistance Rs of 28.8\mathrm{\Omega}, cutoff frequency f{\mathrm{t}} reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz. © 2020 IEEE.

关键词： Schottky barrier diodes

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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Scaling technologies for millimeter-wave GaN-HEMTs

Scaling technologies for millimeter-wave GaN-HEMTs

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Dai, Yongsheng Zhou, Jianjun Chen, Jianfeng Han, Min Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China School of Electronic and Optical Engineer Nanjing University of Science and Technology China

ISBN: (纸本)9781467309028

GaN-HEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted for GaN-HEMTs and the correct topology derived such that simple scaling rules apply to the unit cell. This linear model is applied to build different peripheral devices by varying the number of gate fingers and the width of the device. The geometrical relationship between number of gate fngers and the gate width are derived to optimize the size of the device. © 2012 IEEE.

关键词： Millimeter waves

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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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Study of SiC's mechanical property variance caused by film thickness

Study of SiC's mechanical property variance caused by film t...

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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014

作者： Jiao, Zonglei Zhu, Jian NanJing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

ISBN: (纸本)9783038354628

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm, 4.5μm, 9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa;4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa;9μm SiC thin film: E=167.96Gpa, H=9.48Gpa. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Research on failure analysis and method of GaN-based HEMTs 14

Research on failure analysis and method of GaN-based HEMTs

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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Yan-Fang, Chen Wei-Ling, Guo Yan-Xu, Zhu Jian-Jun, Zhou Liang, Lei Chang-Qing, Bai Key Laboratory of Optoelectronics Technology Ministry of Education Beijing University of Technology Beijing100124 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781538648513

The reliability of GaN-based high electron mobility transistors (HEMTs) is of great importance due to the special characteristics of AlGaN/GaN heterostructure such as intense polarization effect, high material defect density, strong electric field working condition, complicated process etc. Failure analysis is the premise and foundation to improve reliability of semiconductor devices. However, there is less research on failure analysis method about HEMTs at present. In this paper, an effective method of failure analysis of HEMT is presented to analyze the failure reason of electrical stress on many occasions, and a corresponding case analysis of HEMT is carried out. Following the unique complementary detection process of electrical testing, thermal radiation and photon emission, device failure position can be determined rapidly and failure mode and mechanism can be analyzed by this method. A 4-finger GaN-based HEMT with a operating voltage of 28V and a gate width of 1.25mm are analyzed according to this failure analysis method. Two failure positions were localized and the failure mode and mechanism were determined by comprehensive analysis of testing images and data. Finally, several improvements in design and process of GaN-based HEMTs are proposed, which is a valuable reference on the failure analysis and reliability enhancement of HEMT devices. © 2017 IEEE.

关键词： Gallium nitride

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Research on TSV dry etching technology

Research on TSV dry etching technology

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16th Annual Conference and 5th International Conference on Chinese Society of Micro-Nano technology, CSMNT 2014

作者： Jiang, Guoqing Kuang, Lei Zhu, Jian Nanjing Electronic Devices Institute Nanjing210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing210016 China

ISBN: (纸本)9783038354628

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP ( inductively coupled plasma ) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper. © (2015) Trans Tech Publications, Switzerland.

关键词： Three dimensional integrated circuits

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Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints

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Nano Research 2022年第9期15卷 8470-8478页

作者： Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D films can greatly promote layer-dependent physical studies and device ***,an optical method has been developed for simple,high throughput,and accurate determination of the layer number for Au-assisted exfoliated MoS_(2)and WS_(2)films in a broad thickness *** method is based on quantitative analysis of layer-dependent white light reflection spectra(WLRS),revealing that the intensity of exciton-induced reflection peaks can be used as a clear indicator for identifying the layer *** simple yet robust method will facilitate fundamental studies on layer-dependent optical,electrical,and thermal properties and device applications of 2D *** technique can also be readily combined with photoluminescence(PL)and Raman spectroscopies to study other layer-dependent physical properties of 2D materials.

关键词： Au-assisted exfoliation MoS_(2)and WS_(2) layer identification white light reflection spectra excitonic peaks

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Development of 2500V SMB-seagull SiC JBS diodes

Development of 2500V SMB-seagull SiC JBS diodes

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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014

作者： Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China

ISBN: (纸本)9781138027190

High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the bias voltage of -2.5 kV has been obtained. The forward on-state current was 2 A at VF = 1.8 V. The chip is 2.3 mm × 2.3 mm and the active-region is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 6.52 mΩ · cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB seagull package. The thickness of the N—epilayer is 24 µm, and the doping concentration is 4.0 × 1015 cm-3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide with 390 °C cured temperature as the passivation in the end. © 2015 Taylor & Francis Group, London.

关键词： Silicon carbide

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