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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

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Chinese Physics B 2016年第5期25卷 448-452页

作者：李欧鹏张勇徐锐敏程伟王元牛斌陆海燕 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Design and characterization of a G-band（140–220 GHz） terahertz monolithic integrated circuit（TMIC） amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor（DHBT）. An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.

关键词： terahertz amplifier InP double heterojunction bipolar transistor inverted microstrip line monolithic integrated circuit

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Capacitance-voltage characteristic of Ga- and N-polar AlGaN/GaN HEMTs

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 317-320页

作者： Peng, Daqing Li, Zhonghui Li, Chuanhao Zhang, Dongguo Li, Liang Dong, Xun Pan, Lei Luo, Weike Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

Ga- and N-polar AlGaN/GaN HEMTs were designed and epitaxially grown on Si- and C-face SiC substrates by MOCVD. The Capacitance-voltage characteristics of the two structures were investigated by C-V profile and drift-diffusion simulations. The N-polar structure shows double channels, while the electron concentration in the second channel is one order of magnitude lower than that in the first channel. Energy band diagrams and charge distributions were studied. The second channel is formed in AlN/AlGaN interface with electrons spilling over from the first channel when adequate negative voltage was applied on the schottky contact. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Silicon carbide

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Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

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Journal of Semiconductors 2016年第8期37卷 49-54页

作者：任春江钟世昌李宇超李忠辉孔月婵陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electron Devices InstituteNanjing 210016 China

Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEMT. The A1GaN/GaN hetero-structure deposited on 3 inch SiC substrate exhibited a 2DEG hall mobility and density of -2100 cm2/（V.s） and 1.0 x 10^13 cm-2, respectively, at room temperature. Dual field plates were introduced to the designed 0.25μm GaN HEMT and the source connected field plate was optimized for minimizing the peak field plate near the drain side of the gate, while maintaining excellent power gain performance for Ku-band application. The load-pull measurement at 14 GHz showed a power density of 5.2 W/mm for the fabricated 400 μm gate periphery GaN HEMT operated at a drain bias of 28 V. A Ku-band internally matched GaN power transistor was developed with two 10.8 mm gate periphery GaN HEMT chips combined. The GaN power transistor exhibited an output power of 102 W at 13.3 GHz and 32 V operating voltage under pulsed operation mode with a pulse width of 100 μs and duty cycle of 10%. The associated power gain and power added efficiency were 9.2 dB and 48%, respectively. To the best of the authors＇ knowledge, the PAE is the highest for Ku-band GaN power transistor with over 100 W output power.

关键词： Ku-band PAE A1GaN/GaN GaN HEMT field plate

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Research of temporary bonding for 3D integrational Microsystem

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Journal of Physics: Conference Series 2018年第1期986卷 012001-012001页

作者： Shi, G X J Wu Qian, K Q Zhu, J Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the key problem for 3D stack, in this paper designed and experimented the temporary bonding for 3D stack and substrate thinning, analyzed the result of the experiment, and the foundation for the 3D integration technology in the future.

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Cu Pillar Low Temperature Bonding and Interconnection technology of for 3D RF Microsystem

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Journal of Physics: Conference Series 2018年第1期986卷

作者： G X Shi K Q Qian M Huang Y W Yu J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

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Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 214-216页

作者： Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diffusion anisotropy of thick AlGaN films were investigated by scanning electron microscopy, atomic force microscopy and high-resolution X-ray diffraction measurements. It is demonstrated that, in addition to the larger NH3 flow, growth of the AlGaN epilayer under the same trimethylaluminum (TMAl) flow condition as others is a critical factor for less micro-cracks. The results of X-ray double crystal diffraction showed that the AlGaN films with larger ammonia flow exhibited lower Al content and smaller (0002) rocking curve width, and while NH3 flow rate reached 23 liter per minute, a (0002) rocking curve width of 295 arcsecond was reached. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Metallorganic chemical vapor deposition

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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

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Journal of Semiconductors 2016年第6期37卷 112-115页

作者：高涛徐锐敏张凯孔月婵周建军孔岑郁鑫鑫董迅陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

关键词： AlGaN/GaN enhancement-mode（E-mode） stack gate dielectrics atomic layer deposition（ALD）

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An artificial neural network based nonlinear behavioral model for RF power transistors

An artificial neural network based nonlinear behavioral mode...

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Asia-Pacific Conference on Microwave

作者： Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algorithm from the incident and scattered wave data of the RF transistor. The model has been extracted and validated on Cree GaN HEMT device. Both simulation and measurement examples are presented. Compared with existing nonlinear transistor behavioral models, which are all input-power dependent, the new model is able to effectively predict the behavior of a transistor over the entire Smith chart, at different levels of input power with only a single set of model coefficients.

关键词： Radio frequency integrated circuit modeling Microwave amplifiers Microwave communication Microwave FETs

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Hybrid and integrated schottky diode based 330GHz and 420GHz subharmonic mixers

Hybrid and integrated schottky diode based 330GHz and 420GHz...

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2017 International Applied Computational Electromagnetics Society Symposium in China, ACES-China 2017

作者： Zhang, Bo Liu, Ge Zhang, Lisen Xing, Dong Wang, Junlong Fan, Yong School of Electronic Engineering Universtity of Electronic Science and Technology of China Chengdu Sichuan611731 China National Key Laboratory of Application Specific Integrated Circuits Hebei Semiconductor Research Institute Shijiazhuang050000 China

ISBN: (纸本)9780996007856

This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF key laboratory of Fundamental science of Universtity of Electronic science and technology of China. Hybrid and integrated GaAs Schottky diode based 330GHz and 420GHz subharmonic mixers are designed, fabricated and measured. Test results show that the minimum conversion loss of 330GHz monolithic integrated sub-harmonic mixer is 10.4dB at 328GHz, SSB conversion loss is less than 14.7dB from 320GHz to 340GHz when the LO power is 5mW;the minimum conversion loss of the 420GHz hybrid sub-harmonic mixer is 9.99dB at 406GHz, the SSB conversion loss is less than 15dB from 380GHz to 430GHz when the local power is 6dBm;the minimum conversion loss of the 420GHz heterogeneous integrated sub-harmonic mixer is 10dB at 419GHz and 422GHz, SSB conversion loss is less than 14.7dB over 400GHz to 440GHz frequency range when the LO power is 5.2dBm at 210GHz. © 2017 Applied Computational Electromagnetics Society.

关键词： Gallium arsenide

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016

作者： Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China

ISBN: (纸本)9781509046133

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high fT • Lg product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at ID=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best fT performance for GaN-based HEMTs with a gate length of around 60 nm. © 2016 IEEE.

关键词： High electron mobility transistors

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